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1. 发明授权

US07749323B2 Single crystal for scintillator and method for manufacturing same 有权
标题翻译：用于闪烁体的单晶及其制造方法
公开(公告)号：US07749323B2
公开(公告)日：2010-07-06
申请号：US11806257
申请日：2007-05-30
申请人： Naoaki Shimura , Yasushi Kurata , Tatsuya Usui , Kazuhisa Kurashige
发明人： Naoaki Shimura , Yasushi Kurata , Tatsuya Usui , Kazuhisa Kurashige
IPC分类号： C30B29/22
CPC分类号： C30B29/34 , C09K11/7774 , C30B15/00 , G21K4/00
摘要： A single crystal for a scintillator that is a specific single crystal of a cerium-activated orthosilicate compound that comprises 0.00005 to 0.1 wt. %, based on the entire weight of the single crystal, of at least one element selected from a group consisting of elements belonging to Group 13 of the periodic table.
摘要翻译：用于闪烁体的单晶，其是铈活化的原硅酸盐化合物的特定单晶，其包含0.00005至0.1重量％基于单晶的全部重量，选自由元素周期表第13族的元素组成的组中的至少一种元素。

2. 发明申请

US20070277726A1 METHOD FOR HEAT TREATING SINGLE CRYSTAL 审中-公开
标题翻译：热处理单晶的方法
公开(公告)号：US20070277726A1
公开(公告)日：2007-12-06
申请号：US11755787
申请日：2007-05-31
申请人： Tatsuya Usui , Naoaki Shimura , Yasushi Kurata , Kazuhisa Kurashige
发明人： Tatsuya Usui , Naoaki Shimura , Yasushi Kurata , Kazuhisa Kurashige
IPC分类号： C30B5/00
CPC分类号： C30B29/34 , C30B15/00 , C30B33/02
摘要： The present invention provides a method for heat treating a single crystal, comprising a step of heating a single crystal of a specific cerium-activated orthosilicate compound in an oxygen-containing atmosphere.
摘要翻译：本发明提供了一种用于单晶热处理的方法，包括在含氧气氛中加热特定铈活化原硅酸盐化合物的单晶的步骤。

3. 发明申请

US20060266277A1 Single crystal heat treatment method 有权
标题翻译：单晶热处理方法
公开(公告)号：US20060266277A1
公开(公告)日：2006-11-30
申请号：US11374436
申请日：2006-03-14
申请人： Tatsuya Usui , Naoaki Shimura , Yasushi Kurata , Kazuhisa Kurashige
发明人： Tatsuya Usui , Naoaki Shimura , Yasushi Kurata , Kazuhisa Kurashige
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B30/04 , C30B28/10
CPC分类号： C30B31/08 , C30B29/34
摘要： A single crystal heat treatment method having a step of heating a single crystal of a specific cerium-doped silicate compound in an oxygen-poor atmosphere at a temperature T1 (units: ° C.) that satisfies the conditions represented by formula (3) below 800≦T1
摘要翻译：一种单晶热处理方法，其特征在于，在不饱和的氧气氛中，在温度T 1℃（单位：℃）下加热特定的铈掺杂的硅酸盐化合物的单晶，由式（3）表示的条件<？in-line-formula description =“In-line Formulas”end =“lead”？> 800 <= T <1 <（T < （3）<？in-line-formula description =“In-line Formulas”end =“tail”？>（其中T m1（单位：°C））表示单晶的熔点）。

4. 发明授权

US08728232B2 Single crystal heat treatment method 有权
标题翻译：单晶热处理方法
公开(公告)号：US08728232B2
公开(公告)日：2014-05-20
申请号：US11374436
申请日：2006-03-14
申请人： Tatsuya Usui , Naoaki Shimura , Yasushi Kurata , Kazuhisa Kurashige
发明人： Tatsuya Usui , Naoaki Shimura , Yasushi Kurata , Kazuhisa Kurashige
IPC分类号： C30B15/14 , C30B21/06
CPC分类号： C30B31/08 , C30B29/34
摘要： A single crystal heat treatment method having a step of heating a single crystal of a specific cerium-doped silicate compound in an oxygen-poor atmosphere at a temperature T1 (units: ° C.) that satisfies the conditions represented by formula (3) below 800≦T1
摘要翻译：一种单晶热处理方法，其特征在于，在不饱和环境中，在满足下述式（3）所示条件的温度T1（单位：℃）下，加热特定铈掺杂硅酸盐化合物的单晶的工序; 800＆nlE; T1 <（Tm1-550）（3）（其中Tm1（单位：℃）表示单晶的熔点）。

5. 发明授权

US07618491B2 Scintillator single crystal and production method of same 有权
标题翻译：闪烁单晶及其制作方法相同
公开(公告)号：US07618491B2
公开(公告)日：2009-11-17
申请号：US11374434
申请日：2006-03-14
申请人： Yasushi Kurata , Naoaki Shimura , Tatsuya Usui , Kazuhisa Kurashige
发明人： Yasushi Kurata , Naoaki Shimura , Tatsuya Usui , Kazuhisa Kurashige
IPC分类号： C30B15/00 , C30B11/00
CPC分类号： C30B29/34 , C30B15/00 , Y10S117/906
摘要： A scintillator single crystal of a specific cerium-doped silicate compound that contains 0.00005 to 0.1 wt % of one or more types of element selected from the group consisting of elements belonging to group 2 of the periodic table based on the total weight of the single crystal.
摘要翻译：特定铈掺杂硅酸盐化合物的闪烁体单晶，其含有0.00005〜0.1重量％的选自元素周期表第2族的元素中的一种或多种元素，基于单晶的总重量。

6. 发明申请

US20080089824A1 Single crystal for scintillator and method for manufacturing same 有权
标题翻译：用于闪烁体的单晶及其制造方法
公开(公告)号：US20080089824A1
公开(公告)日：2008-04-17
申请号：US11806257
申请日：2007-05-30
申请人： Naoaki Shimura , Yasushi Kurata , Tatsuya Usui , Kazuhisa Kurashige
发明人： Naoaki Shimura , Yasushi Kurata , Tatsuya Usui , Kazuhisa Kurashige
IPC分类号： C01F17/00
CPC分类号： C30B29/34 , C09K11/7774 , C30B15/00 , G21K4/00
摘要： A single crystal for a scintillator that is a specific single crystal of a cerium-activated orthosilicate compound that comprises 0.00005 to 0.1 wt. %, based on the entire weight of the single crystal, of at least one element selected from a group consisting of elements belonging to Group 13 of the periodic table.
摘要翻译：用于闪烁体的单晶，其是铈活化的原硅酸盐化合物的特定单晶，其包含0.00005至0.1重量％基于单晶的全部重量，选自由元素周期表第13族的元素组成的组中的至少一种元素。

7. 发明申请

US20060288926A1 Scintillator single crystal and production method of same 有权
公开(公告)号：US20060288926A1
公开(公告)日：2006-12-28
申请号：US11374434
申请日：2006-03-14
申请人： Yasushi Kurata , Naoaki Shimura , Tatsuya Usui , Kazuhisa Kurashige
发明人： Yasushi Kurata , Naoaki Shimura , Tatsuya Usui , Kazuhisa Kurashige
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/34 , C30B15/00 , Y10S117/906
摘要： A scintillator single crystal of a specific cerium-doped silicate compound that contains 0.00005 to 0.1 wt % of one or more types of element selected from the group consisting of elements belonging to group 2 of the periodic table based on the total weight of the single crystal.

8. 发明授权

US07531036B2 Single crystal heat treatment method 有权
公开(公告)号：US07531036B2
公开(公告)日：2009-05-12
申请号：US11374435
申请日：2006-03-14
申请人： Naoaki Shimura , Yasushi Kurata , Tatsuya Usui , Kazuhisa Kurashige
发明人： Naoaki Shimura , Yasushi Kurata , Tatsuya Usui , Kazuhisa Kurashige
IPC分类号： C30B15/14 , C30B21/06
CPC分类号： C30B29/34 , C30B31/08 , Y10S117/906
摘要： The present invention provides a single crystal heat treatment method, having a step of heating a single crystal of a cerium-doped silicate compound represented by any of general formulas (1) to (4) below in an oxygen-containing atmosphere Y2−(x+y)LnxCeySiO5 (1) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, x represents a numerical value from 0 to 2, and y represents a numerical value greater than 0 but less than or equal to 0.2) Gd2−(z+w)LnzCewSiO5 (2) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, z represents a numerical value greater than 0 but less than or equal to 2, and w represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(p+q)LnpCeqSiO5 (3) (wherein Ln represents at least one elemental species selected from a group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y and Sc, which are rare earth elements having an ionic radius smaller than Tb, p represents a numerical value greater than 0 but less than or equal to 2, and q represents a numerical value greater than 0 but less than or equal to 0.2) Gd2−(r+s)LurCesSiO5 (4) (wherein r represents a numerical value greater than 0 but less than or equal to 2, and s represents a numerical value greater than 0 but less than or equal to 0.2).

9. 发明申请

US20070292330A1 Scintillator single crystal and process for its production 审中-公开
标题翻译：闪烁单晶及其生产工艺
公开(公告)号：US20070292330A1
公开(公告)日：2007-12-20
申请号：US11723799
申请日：2007-03-22
申请人： Yasushi Kurata , Naoaki Shimura , Tatsuya Usui , Kazuhisa Kurashige
发明人： Yasushi Kurata , Naoaki Shimura , Tatsuya Usui , Kazuhisa Kurashige
IPC分类号： C01F17/00
CPC分类号： C01B33/20 , C30B15/00 , C30B29/34
摘要： The scintillator single crystal of the invention is a specific cerium-activated silicate single crystal wherein the total content of one or more elements selected from the group consisting of elements belonging to Groups 4, 5, 6 and Groups 14, 15, 16 of the Periodic Table is no greater than 0.002 wt % based on the total weight of the single crystal.
摘要翻译：本发明的闪烁体单晶是特定的铈活化硅酸盐单晶，其中选自元素周期表第4,5,6族和第14,15,16族的元素中的一种或多种元素的总含量相对于单晶的总重量，表不大于0.002重量％。

10. 发明申请

US20060266276A1 Single crystal heat treatment method 有权
公开(公告)号：US20060266276A1
公开(公告)日：2006-11-30
申请号：US11374435
申请日：2006-03-14
申请人： Naoaki Shimura , Yasushi Kurata , Tatsuya Usui , Kazuhisa Kurashige
发明人： Naoaki Shimura , Yasushi Kurata , Tatsuya Usui , Kazuhisa Kurashige
IPC分类号： C30B15/00 , C30B27/02 , C30B21/06 , C30B28/10 , C30B30/04
CPC分类号： C30B29/34 , C30B31/08 , Y10S117/906
摘要： The present invention provides a single crystal heat treatment method, having a step of heating a single crystal of a cerium-doped silicate compound represented by any of general formulas (1) to (4) below in an oxygen-containing atmosphere Y2-(x+y)LnxCeySiO5 (1) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, x represents a numerical value from 0 to 2, and y represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(z+w)LnzCewSiO5 (2) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, z represents a numerical value greater than 0 but less than or equal to 2, and w represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(p+q)LnpCeqSiO5 (3) (wherein Ln represents at least one elemental species selected from a group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y and Sc, which are rare earth elements having an ionic radius smaller than Tb, p represents a numerical value greater than 0 but less than or equal to 2, and q represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(r+s)LurCesSiO5 (4) (wherein r represents a numerical value greater than 0 but less than or equal to 2, and s represents a numerical value greater than 0 but less than or equal to 0.2).

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