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    • 1. 发明授权
    • Light absorption layer for a display device
    • 用于显示装置的光吸收层
    • US08149357B2
    • 2012-04-03
    • US12470387
    • 2009-05-21
    • Nak-Cho ChoiMin KangHoon Kang
    • Nak-Cho ChoiMin KangHoon Kang
    • G02F1/1335
    • G02F1/13378G02F1/133788G02F2201/086Y10T428/1036
    • A liquid crystal display is presented. The liquid crystal display includes: a first substrate; a pixel electrode formed on the first substrate; a first alignment layer formed on the pixel electrode; a second substrate facing the first substrate; a common electrode formed on the second substrate; a second alignment layer formed on the common electrode; a liquid crystal layer formed between the first alignment layer and the second alignment layer; and a light absorption layer formed between the first substrate and the first alignment layer, or the second substrate and the second alignment layer, wherein the light absorption layer absorbs light having a UV wavelength between about 280 nm and about 450 nm.
    • 提出了一种液晶显示器。 液晶显示器包括:第一基板; 形成在所述第一基板上的像素电极; 形成在像素电极上的第一取向层; 面对所述第一基板的第二基板; 形成在所述第二基板上的公共电极; 形成在公共电极上的第二取向层; 形成在第一取向层和第二取向层之间的液晶层; 以及形成在所述第一基板和所述第一取向层或所述第二基板和所述第二取向膜之间的光吸收层,其中所述光吸收层吸收在约280nm和约450nm之间的UV波长的光。
    • 2. 发明申请
    • LIGHT ABSORPTION LAYER FOR A DISPLAY DEVICE
    • 用于显示装置的光吸收层
    • US20100033657A1
    • 2010-02-11
    • US12470387
    • 2009-05-21
    • Nak-Cho ChoiMin KangHoon Kang
    • Nak-Cho ChoiMin KangHoon Kang
    • G02F1/1335
    • G02F1/13378G02F1/133788G02F2201/086Y10T428/1036
    • A liquid crystal display is presented. The liquid crystal display includes: a first substrate; a pixel electrode formed on the first substrate; a first alignment layer formed on the pixel electrode; a second substrate facing the first substrate; a common electrode formed on the second substrate; a second alignment layer formed on the common electrode; a liquid crystal layer formed between the first alignment layer and the second alignment layer; and a light absorption layer formed between the first substrate and the first alignment layer, or the second substrate and the second alignment layer, wherein the light absorption layer absorbs light having a UV wavelength between about 280 nm and about 450 nm.
    • 提出了一种液晶显示器。 液晶显示器包括:第一基板; 形成在所述第一基板上的像素电极; 形成在像素电极上的第一取向层; 面对所述第一基板的第二基板; 形成在所述第二基板上的公共电极; 形成在公共电极上的第二取向层; 形成在第一取向层和第二取向层之间的液晶层; 以及形成在所述第一基板和所述第一取向层或所述第二基板和所述第二取向膜之间的光吸收层,其中所述光吸收层吸收在约280nm和约450nm之间的UV波长的光。
    • 9. 发明授权
    • Method for manufacturing a thin film transistor array panel
    • 薄膜晶体管阵列面板的制造方法
    • US08324003B2
    • 2012-12-04
    • US12767667
    • 2010-04-26
    • Hoon KangJin-Ho JuYang-Ho JungJae-Sung Kim
    • Hoon KangJin-Ho JuYang-Ho JungJae-Sung Kim
    • H01L21/311H01L33/44
    • H01L21/76816H01L27/124H01L27/1288
    • A thin film transistor display panel includes gate wiring formed on an insulation substrate and including gate lines, and gate electrodes and gate pads connected to the gate lines; a gate insulation layer covering the gate wiring; a semiconductor pattern formed over the gate insulation layer; data wiring formed over the gate insulation layer or the semiconductor pattern and including source electrodes, drain electrodes, and data pads; a protection layer including a Nega-PR type of organic insulating layer formed all over the semiconductor pattern and the data wiring, wherein the thickness of the Nega-PR type of organic insulating layer in both the gate and data pad regions is smaller than in the other regions; and a pixel electrode connected to the drain electrode. When exposing the Nega-PR type of passivation layer in the pad region during a photolithography process, a photomask having a lattice pattern made of a metal such as Cr that has a line width of less than the resolution of a light exposer is used. Thus, the resulting post-etch height of the passivation layer can be selectively controlled so as to provide reduced effective thickness in the pad regions.
    • 薄膜晶体管显示面板包括形成在绝缘基板上并包括栅极线的栅极布线,以及连接到栅极线的栅电极和栅极焊盘; 覆盖栅极布线的栅极绝缘层; 形成在所述栅极绝缘层上的半导体图案; 数据线形成在栅极绝缘层或半导体图案上,并且包括源电极,漏电极和数据焊盘; 包括形成在整个半导体图案上的Nega-PR型有机绝缘层和数据布线的保护层,其中栅极和数据焊盘区域中的Nega-PR类型的有机绝缘层的厚度小于 其他地区; 以及连接到漏电极的像素电极。 在光刻工艺中,当在焊盘区域中曝光Nega-PR类型的钝化层时,使用具有由诸如Cr之类的金属制成的格子图案的光掩模,该栅极图案的线宽小于曝光器的分辨率。 因此,可以选择性地控制所得到的钝化层的蚀刻后高度,以便在焊盘区域中提供减小的有效厚度。