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    • 4. 发明申请
    • Photomask cleaning using vacuum ultraviolet (VUV) light cleaning
    • 使用真空紫外线(VUV)清洁光掩模
    • US20070012336A1
    • 2007-01-18
    • US11392300
    • 2006-03-28
    • Yih-Chen SuChih-Cheng LinTung KangHung Hsieh
    • Yih-Chen SuChih-Cheng LinTung KangHung Hsieh
    • B08B3/12B08B3/00
    • B08B7/0035B08B3/08B08B7/0042B08B7/0071G03F1/82
    • A multi-sub-process cleaning procedure cleans phase shift photomasks and other photomasks and Mo-containing surfaces. In one embodiment, vacuum ultraviolet (VUV) light produced by an Xe2 excimer laser converts oxygen to ozone that is used in a first cleaning operation. The VUV/ozone clean may be followed by a wet SC1 chemical clean and the two-sub-process cleaning procedure reduces phase-shift loss and increases transmission. In another embodiment, the first sub-process may use other means to form a molybdenum oxide on the Mo-containing surface. In another embodiment, the multi-sub-process cleaning operation provides a wet chemical clean such as SC1 or SPM or both, followed by a further chemical or physical treatment such as ozone, baking or electrically ionized water.
    • 多子过程清洁程序可以清除相移光掩模和其他光掩模和含Mo表面。 在一个实施方案中,由Xe 2激子准分子激光器产生的真空紫外线(VUV)光将氧气转化为在第一清洁操作中使用的臭氧。 VUV /臭氧清洁后可以进行湿式SC1化学清洗,双子过程清洗程序可减少相移损失并增加透光率。 在另一个实施方案中,第一子方法可以使用其它方法在含Mo表面上形成氧化钼。 在另一个实施方案中,多次处理清洁操作提供湿化学清洁例如SC1或SPM或两者,然后进一步化学或物理处理,例如臭氧,烘烤或电离水。
    • 6. 发明授权
    • Cable installation assembly
    • 电缆安装组件
    • US08465300B2
    • 2013-06-18
    • US13232914
    • 2011-09-14
    • Chih-Cheng Lin
    • Chih-Cheng Lin
    • H01R4/66
    • H01R24/86
    • A cable installation assembly includes a connector, a power wire, a ground wire and two signal wires. The connector includes a base, having a plurality of terminal containing grooves formed in the base and arranged separately adjacent to each other. The power wire includes a power core and a power terminal electrically coupled to power core, and each power terminal is plugged into each corresponding terminal containing groove. The ground wire includes a grounding core and a grounding terminal electrically coupled to the grounding core and plugged into the terminal containing groove. The signal wire includes a signal core and a signal terminal electrically coupled to signal core, and the two signal terminals are plugged into the terminal containing grooves respectively and not arranged adjacent to each other, so that signals can be transmitted without interfering with one another.
    • 电缆安装组件包括连接器,电源线,接地线和两根信号线。 连接器包括基部,其具有形成在基部中并且彼此分开相邻布置的多个端子容纳槽。 电源线包括电源芯和电连接到电源芯的电源端子,并且每个电源端子插入每个对应的端子容纳槽中。 接地线包括接地芯和接地端子,电接地接地芯并插入到端子容纳槽中。 信号线包括信号芯和电耦合到信号芯的信号端子,并且两个信号端子分别插入到包含槽的端子中,并且不彼此相邻布置,使得可以传输信号而不会彼此干扰。
    • 7. 发明授权
    • Cable connector joint fastening structure
    • 电缆连接器接头紧固结构
    • US08328574B1
    • 2012-12-11
    • US13209429
    • 2011-08-14
    • Chih-Cheng Lin
    • Chih-Cheng Lin
    • H01R4/38
    • H01R13/622H01R9/03H01R13/6275H01R13/639H01R13/64
    • A cable connector joint fastening structure includes a male connector, a female connector, and a fastener. The male connector includes a male terminal body with a male terminal joint, a freely rotating screw sleeve locked around the external periphery of the male terminal joint. The female connector includes a female terminal body with a female terminal joint, and an insert space formed in the female terminal joint for inserting the male terminal joint, and the screw sleeve is screwed and coupled to the female terminal joint. The fastener includes a pivot portion formed at an external side of the female connector, and a locking arm pivotally installed onto the pivot portion, extended towards the male terminal body, disposed across the screw sleeve, and locked to the male connector.
    • 电缆连接器接头紧固结构包括阳连接器,阴连接器和紧固件。 公连接器包括具有阳端子接头的阳端子体,围绕阳端子接头的外周锁定的自由旋转的螺旋套筒。 阴连接器包括具有阴端子接头的阴端子体,以及形成在阴端子接头中用于插入阳端子接头的插入空间,螺纹套筒螺纹连接到阴端子接头。 紧固件包括形成在阴连接器的外侧的枢转部分,以及枢转地安装在枢转部分上的锁定臂,朝向阳端子主体延伸,跨过螺钉套筒设置并锁定到阳连接器。
    • 8. 发明申请
    • Electronic vehicle license and a reading and writing control device therefor
    • 电子车辆许可证及其读写控制装置
    • US20090251287A1
    • 2009-10-08
    • US12078882
    • 2008-04-08
    • Chih-Cheng Lin
    • Chih-Cheng Lin
    • H04B7/00
    • G06Q10/10G07C9/00007
    • An electronic vehicle license is installed on a vehicle to store a record and insurance data of the vehicle, and a reading and writing control device is provided for an authority/official organization to read and write data into the electronic vehicle license; the electronic vehicle license includes a storage unit, a non-contact transferring unit, and a central processing unit; the reading and writing control device includes a central controlling unit, which has a weight assigned thereto in accordance with a jurisdiction of the authority that is authorized to use the reading and writing control device so that the central controlling unit is allowed to handle certain categories of data; the reading and writing control device further includes an encrypting and decrypting unit, a non-contact transferring unit, and a displaying unit to show the data of the vehicle license.
    • 在车辆上安装电子车辆许可证以存储车辆的记录和保险数据,并且向权威/官方组织提供读写控制装置以将数据读取和写入电子车辆许可证; 电子车辆许可包括存储单元,非接触式传送单元和中央处理单元; 读写控制装置包括中央控制单元,其具有根据授权使用读写控制装置的授权的管辖权分配的权重,使得中央控制单元被允许处理某些类别的 数据; 读写控制装置还包括加密和解密单元,非接触式传送单元和显示车辆许可证的数据的显示单元。
    • 9. 发明授权
    • Method for patterning micro features by using developable bottom anti-reflection coating
    • 通过使用可显影的底部抗反射涂层来图案化微观特征的方法
    • US07341939B2
    • 2008-03-11
    • US11061056
    • 2005-02-18
    • Dah-Chung OweyangChih-Cheng LinHsueh-Liang HungBang-Chein Ho
    • Dah-Chung OweyangChih-Cheng LinHsueh-Liang HungBang-Chein Ho
    • H01L21/4763
    • G03F7/38G03F7/091H01L21/0276
    • In the manufacture of a semiconductor, a DBARC layer is deposited upon a wafer to prevent reflection. A photo resist layer is deposited upon the DBARC layer and the wafer is selectively exposed to irradiation. The irradiation generates photo acid (H+ ions) in the exposed areas of the photo resist and DBARC. In order to provide better resolution in the DBARC for micro-features, an electric field is generated vertically through the coated wafer before or during post exposure baking (PEB) to create a uniform vertical distribution of H+ ions though the DBARC. The coated wafer is then developed to remove either the unexposed portions, or exposed portion of the DBARC. The cavities formed by the developer have side walls that are substantially vertical as a result of the uniform vertical distribution of the H+ ions.
    • 在制造半导体时,将DBARC层沉积在晶片上以防止反射。 光致抗蚀剂层沉积在DBARC层上,并且晶片被选择性地暴露于照射下。 照射在光致抗蚀剂和DBARC的曝光区域产生光酸(H +离子)。 为了在DBARC中为微特征提供更好的分辨率,在后曝光烘烤(PEB)之前或期间,通过涂覆的晶片垂直产生电场,以通过DBARC产生H +离子的均匀垂直分布。 然后将涂覆的晶片展开以除去DBARC的未曝光部分或曝光部分。 由显影剂形成的空腔由于H +离子的均匀垂直分布而具有基本垂直的侧壁。