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    • 1. 发明申请
    • MODULATION OF INPUT SIGNALS FOR A SENSOR APPARATUS
    • 传感器装置输入信号的调制
    • WO2010052664A2
    • 2010-05-14
    • PCT/IB2009/054920
    • 2009-11-05
    • NXP B.V.PROCHASKA, MarcusKLABUNDE, BorisBUTZMANN, Stefan
    • PROCHASKA, MarcusKLABUNDE, BorisBUTZMANN, Stefan
    • G01R33/063
    • The present invention proposes a sensor apparatus (200) for generating a measurement signal (U a ) based on an input signal (H m ). The input signal is preferably a magnetic field. The sensor apparatus includes a signal generation device (220) and a sensor device (230). The signal generation device (220) generates a periodic signal (H e ) of the same type as the input signal (H m ). The signal generation device further generates a mixed signal based on the input signal (H m ) and the periodic signal (H e ). The sensor device (230) finally generates the measurement signal (U a ) based on the mixed signal and a characteristic curve (110) of the sensor device (230). By mixing the input signal (H m ) with a periodic signal (H e ) of the same type, the sensitivity and robustness of the sensor apparatus (200) can be increased by synchronously reducing its complexity.
    • 本发明提出了一种用于基于输入信号(Hm)产生测量信号(Ua)的传感器装置(200)。 输入信号优选为磁场。 传感器装置包括信号产生装置(220)和传感器装置(230)。 信号生成装置(220)生成与输入信号(Hm)相同类型的周期信号(He)。 信号生成装置还根据输入信号(Hm)和周期信号(He)生成混合信号。 传感器装置(230)最终基于混合信号和传感器装置(230)的特性曲线(110)产生测量信号(Ua)。 通过将输入信号(Hm)与相同类型的周期信号(He)混合,可以通过同步降低其复杂度来增加传感器装置(200)的灵敏度和鲁棒性。
    • 6. 发明申请
    • CURRENT MIRROR CIRCUIT
    • 当前镜像电路
    • WO2007088503A1
    • 2007-08-09
    • PCT/IB2007/050258
    • 2007-01-25
    • NXP B.V.BUTZMANN, Stefan
    • BUTZMANN, Stefan
    • H03K17/082G05F3/26
    • G05F3/262G05F3/265G05F3/267
    • The invention relates to a current mirror circuit (40, 50, 60) comprising an input-side transistor (Q 1 ) or field effect transistor and an output-side transistor (Q 2 ) or field effect transistor, which are coupled with their emitters or sources and are connected to a voltage (U B , 55), which are electrically coupled with each other with their respective base (45, 46, 57, 58) or gate and are connected to a the field effect transistor (Q 3 ) in such a way that the source (44) of the field effect transistor (Q 3 ) is coupled to the base (45,46,57,58) or gate of the two transistors (Q 1 , Q 2 ) or field effect transistors and the drain (47) of the field effect transistor (Q 3 ) is coupled to the collector (48) or drain of the input-side transistor (Q 1 ) or field effect transistor.
    • 本发明涉及包括输入侧晶体管(Q SUB)或场效应晶体管和输出侧晶体管(Q 2)的电流镜电路(40,50,60) SUB)或场效应晶体管,它们与它们的发射极或源耦合并且被连接到电压(U BAT,55),它们各自的基极(45, 46,57,58)或栅极,并且以这样的方式连接到场效应晶体管(Q 3 3 N),使得场效应晶体管(Q 3> / SUB>)耦合到基极(45,46,57,58)或两个晶体管(Q 1,Q 2 2)的栅极或场效应晶体管, 场效应晶体管(Q 3/3)的漏极(47)耦合到输入侧晶体管(Q SUB)的集电极(48)或漏极(field) 效应晶体管。