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1. 发明申请

WO2010001344A3 INTEGRATING AND OPTIMIZING DIFFERENT FUNCTIONAL COMPONENTS ON A SINGLE SUBSTRATE HAVING LAYER IN COMMON 审中-公开
公开(公告)号：WO2010001344A3
公开(公告)日：2010-01-07
申请号：PCT/IB2009/052847
申请日：2009-06-30
申请人： NXP B.V. , KLEE, Mareike , RENDERS, Christina Adriana , LOK, Pieter , ROEST, Aarnoud Laurens , DEN DEKKER, Arnoldus , REIMANN, Klaus , STEENEKEN, Peter Gerard , WUNNICKE, Olaf
发明人： KLEE, Mareike , RENDERS, Christina Adriana , LOK, Pieter , ROEST, Aarnoud Laurens , DEN DEKKER, Arnoldus , REIMANN, Klaus , STEENEKEN, Peter Gerard , WUNNICKE, Olaf
IPC分类号： H03H9/05 , H01L21/00 , H01L27/00
摘要： The invention relates to a method of manufacturing a monolithic device comprising multiple process steps. The monolithic device comprises at least two different electrical or electromechanical functional components (GS, CS, TC1, TC2, HKC, BW, BWM, FBAR). Each respective electromechanical functional component is formed by a respective functional stack (FS1, FS2) comprising a plurality of layers. The at least two 5 functional components (GS...FBAR) have a first layer in common (DL, E1, E2, E3). The method comprises a step of: providing a first ranking of the functional components (GS...FBAR) for the first layer (DL, E1, E2, E3) which is based on a plurality of respective performance indicators for each respective one of the functional. The multiple process steps comprise a step of manufacturing the first layer (DL, E1, E2, E3) such that it is physically 10 and/or geometrically optimized for at least a single one of the functional components selected on the basis of a highest rank in the first ranking. The method in accordance with the invention provides for a monolithic integration of different functional components (GS...FBAR). In this method layers of the functional stack are reused, which saves process steps, and optimized for optimal performance of at least one of the functional components 15 (GS...FBAR) without jeopardizing the performance of the monolithic device to unacceptable levels. The invention further relates to a monolithic device which features a wider applicability than the known monolithic devices because the tunable and/or high-k dielectric layer in respective functional stacks can be better shared between the functional components.

2. 发明申请

WO2010128482A1 RF MEMS SWITCH WITH A GRATING AS MIDDLE ELECTRODE 审中-公开
标题翻译： RF MEMS开关作为中间电极
公开(公告)号：WO2010128482A1
公开(公告)日：2010-11-11
申请号：PCT/IB2010/052010
申请日：2010-05-07
申请人： NXP B.V. , STEENEKEN, Peter Gerard , SUY, Hilco , HERFST, Rodolf , VAN LIPPEN, Twan
发明人： STEENEKEN, Peter Gerard , SUY, Hilco , HERFST, Rodolf , VAN LIPPEN, Twan
IPC分类号： H01H59/00
CPC分类号： H01H59/0009 , H01H2059/0018
摘要： The present invention provides a capacitive MEMS device comprising a first electrode lying in a plane, and a second electrode suspended above the first electrode and movable with respect to the first electrode. The first electrode functions as an actuation electrode. A gap is present between the first electrode and the second electrode. A third electrode is placed intermediate the first and second electrode with the gap between the third electrode and the second electrode. The third electrode has one or a plurality of holes therein, preferably in an orderly or irregular array. An aspect of the present invention integration of a conductive, e.g. metallic grating as a middle (or third) electrode. An advantage of the present invention is that it can reduce at least one problem of the prior art. This advantage allows an independent control over the pull-in and release voltage of a switch.
摘要翻译：本发明提供了一种电容MEMS器件，其包括位于平面中的第一电极和悬挂在第一电极上方并可相对于第一电极移动的第二电极。第一电极用作致动电极。在第一电极和第二电极之间存在间隙。第三电极被放置在第一和第二电极之间，第三电极和第二电极之间具有间隙。第三电极在其中具有一个或多个孔，优选为有序或不规则的阵列。本发明的一个方面是导电的，例如，金属光栅作为中间（或第三）电极。本发明的优点在于它可以减少至少一个现有技术的问题。这个优点允许独立控制开关的拉入和释放电压。

3. 发明公开

EP2427899A1 RF MEMS SWITCH WITH A GRATING AS MIDDLE ELECTRODE 审中-公开
标题翻译： RF MEMS有格子作为介质电极SWITCH
公开(公告)号：EP2427899A1
公开(公告)日：2012-03-14
申请号：EP10726234.7
申请日：2010-05-07
申请人： NXP B.V.
发明人： STEENEKEN, Peter Gerard , SUY, Hilco , HERFST, Rodolf , VAN LIPPEN, Twan
IPC分类号： H01H59/00
CPC分类号： H01H59/0009 , H01H2059/0018
摘要： The present invention provides a capacitive MEMS device comprising a first electrode lying in a plane, and a second electrode suspended above the first electrode and movable with respect to the first electrode. The first electrode functions as an actuation electrode. A gap is present between the first electrode and the second electrode. A third electrode is placed intermediate the first and second electrode with the gap between the third electrode and the second electrode. The third electrode has one or a plurality of holes therein, preferably in an orderly or irregular array. An aspect of the present invention integration of a conductive, e.g. metallic grating as a middle (or third) electrode. An advantage of the present invention is that it can reduce at least one problem of the prior art. This advantage allows an independent control over the pull-in and release voltage of a switch.

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