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1. 发明申请

WO2009066220A1 ELECTRODE FOR AN IONIZATION CHAMBER AND METHOD PRODUCING THE SAME 审中-公开
标题翻译：用于放电室的电极及其生产方法
公开(公告)号：WO2009066220A1
公开(公告)日：2009-05-28
申请号：PCT/IB2008/054796
申请日：2008-11-17
申请人： NXP B.V. , BOUTCHICH, Mohamed , MADAKASIRA, Vijayaraghavan , AKIL, Nader
发明人： BOUTCHICH, Mohamed , MADAKASIRA, Vijayaraghavan , AKIL, Nader
IPC分类号： G01N27/62 , G01N27/68 , H01J41/02
CPC分类号： G01N27/62 , G01N27/68
摘要： An electrode for an ionization chamber and an ionization chamber including an electrode are provided wherein the electrode comprises a substrate comprising a first material, and a plurality of nanowires extending from the substrate and manufactured by processing the first material of the substrate.
摘要翻译：提供了一种用于电离室的电极和包括电极的电离室，其中电极包括包含第一材料的衬底和从衬底延伸并通过加工衬底的第一材料制造的多个纳米线。

2. 发明申请

WO2008129478A1 NONVOLATILE MEMORY CELL COMPRISING A NANOWIRE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：包含纳米级的非易失性存储单元及其制造方法
公开(公告)号：WO2008129478A1
公开(公告)日：2008-10-30
申请号：PCT/IB2008/051478
申请日：2008-04-17
申请人： NXP B.V. , HUERTA, Almudena , VAN DUUREN, Michiel Jos , AKIL, Nader , GOLUBOVIC, Dusan , BOUTCHICH, Mohamed
发明人： HUERTA, Almudena , VAN DUUREN, Michiel Jos , AKIL, Nader , GOLUBOVIC, Dusan , BOUTCHICH, Mohamed
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8246 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , G11C16/04 , H01L29/423 , H01L29/06 , H01L29/78
CPC分类号： B82Y10/00 , G11C16/0433 , H01L21/28273 , H01L21/28282 , H01L27/0203 , H01L27/115 , H01L27/11521 , H01L27/11556 , H01L27/11568 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/42324 , H01L29/4234 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/792 , H01L29/7926
摘要： A memory cell (300, 500), the memory cell (300, 500) comprising a substrate (301), a nanowire (302) extending along a vertical trench formed in the substrate (301), a control gate (303) surrounding the nanowire (302), and a charge storage structure (320, 501) formed between the control gate (303) and the nanowire (302).
摘要翻译：存储单元（300,500），包括基板（301）的存储单元（300,500），沿着形成在基板（301）中的垂直沟槽延伸的纳米线（302），包围该基板纳米线（302）和形成在控制栅极（303）和纳米线（302）之间的电荷存储结构（320,501）。

3. 发明申请

WO2010029488A1 PLANAR THERMOPILE INFRARED MICROSENSOR 审中-公开
标题翻译：平面热像红外微型传感器
公开(公告)号：WO2010029488A1
公开(公告)日：2010-03-18
申请号：PCT/IB2009/053896
申请日：2009-09-07
申请人： NXP B.V. , BOUTCHICH, Mohamed , BATAILLOU, Benoit
发明人： BOUTCHICH, Mohamed , BATAILLOU, Benoit
IPC分类号： G01J5/12
CPC分类号： G01J5/12 , G01J5/022 , G01J5/0806 , G01J5/0815 , G01J5/0853
摘要： An IR sensor comprises a heat sink substrate (10) having portions (12) of relatively high thermal conductivity and portions (14) of relatively low thermal conductivity and a planar thermocouple layer (16) having a hot junction (18) and a cold junction (20), with the hot junction (18) located on a portion (14) of the heat sink substrate with relatively low thermal conductivity. A low thermal conductivity dielectric layer (22) is provided over the thermocouple layer (16), and has a via (24) leading to the hot junction (18). An IR reflector layer (26) covers the low thermal conductivity dielectric layer (22) and the side walls of the via (24). An IR absorber (30; 30') is within the via. This structure forms a planar IR microsensor which uses a structured substrate and a dielectric layer to avoid the need for any specific packaging. This design provides a higher sensitivity by providing a focus on the thermocouple, and also gives better immunity to gas conduction and convection.
摘要翻译： IR传感器包括散热基板（10），散热基板（10）具有相对较高导热率的部分（12）和具有相对较低导热率的部分（14）和具有热接点（18）的平面热电偶层（16）（20），热接头（18）位于散热器衬底的一部分（14）上，导热系数相对较低。在热电偶层（16）之上提供低导热介电层（22），并且具有通向热连接点（18）的通孔（24）。 IR反射器层（26）覆盖低导热介电层（22）和通孔（24）的侧壁。 IR吸收器（30; 30'）在通孔内。该结构形成平面的IR微传感器，其使用结构化基板和电介质层以避免对任何特定封装的需要。该设计通过提供对热电偶的关注而提供更高的灵敏度，并且还对气体传导和对流提供更好的抗扰性。

4. 发明公开

EP2147461A1 NONVOLATILE MEMORY CELL COMPRISING A NANOWIRE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：随着对生产不纳米线和工艺挥发性记忆体单元
公开(公告)号：EP2147461A1
公开(公告)日：2010-01-27
申请号：EP08737899.8
申请日：2008-04-17
申请人： NXP B.V.
发明人： HUERTA, Almudena , VAN DUUREN, Michiel Jos , AKIL, Nader , GOLUBOVIC, Dusan , BOUTCHICH, Mohamed
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8246 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , G11C16/04 , H01L29/423 , H01L29/06 , H01L29/78
CPC分类号： B82Y10/00 , G11C16/0433 , H01L21/28273 , H01L21/28282 , H01L27/0203 , H01L27/115 , H01L27/11521 , H01L27/11556 , H01L27/11568 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/42324 , H01L29/4234 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/792 , H01L29/7926
摘要： A memory cell (300, 500), the memory cell (300, 500) comprising a substrate (301), a nanowire (302) extending along a vertical trench formed in the substrate (301), a control gate (303) surrounding the nanowire (302), and a charge storage structure (320, 501) formed between the control gate (303) and the nanowire (302).
摘要翻译：一种存储单元，包括：基板上的存储单元，沿基板形成的垂直沟槽延伸的纳米线，控制栅极周围的纳米线，和电荷存储结构中的控制栅和纳米线之间形成的。

5. 发明授权

EP2212685B1 AN IONIZATION CHAMBER AND METHOD PRODUCING THE SAME 有权
标题翻译：电离室和生成该电离室的方法
公开(公告)号：EP2212685B1
公开(公告)日：2017-05-17
申请号：EP08851478.1
申请日：2008-11-17
申请人： NXP B.V.
发明人： BOUTCHICH, Mohamed , MADAKASIRA, Vijayaraghavan , AKIL, Nader
IPC分类号： G01N27/62 , G01N27/68 , H01J41/02
CPC分类号： G01N27/62 , G01N27/68

6. 发明公开

EP2212685A1 ELECTRODE FOR AN IONIZATION CHAMBER AND METHOD PRODUCING THE SAME 有权
标题翻译：用于产生电离和方法
公开(公告)号：EP2212685A1
公开(公告)日：2010-08-04
申请号：EP08851478.1
申请日：2008-11-17
申请人： NXP B.V.
发明人： BOUTCHICH, Mohamed , MADAKASIRA, Vijayaraghavan , AKIL, Nader
IPC分类号： G01N27/62 , G01N27/68 , H01J41/02
CPC分类号： G01N27/62 , G01N27/68
摘要： An electrode for an ionization chamber and an ionization chamber including an electrode are provided wherein the electrode comprises a substrate comprising a first material, and a plurality of nanowires extending from the substrate and manufactured by processing the first material of the substrate.

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