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1. 发明授权

US09007129B2 Amplifer device 有权
标题翻译：放大器装置
公开(公告)号：US09007129B2
公开(公告)日：2015-04-14
申请号：US14109879
申请日：2013-12-17
申请人： NXP B.V.
发明人： Albert Gerardus Wilhelmus Philipus van Zuijlen , Vittorio Cuoco , Josephus Henricus Bartholomeus van der Zanden
IPC分类号： H03F3/68 , H03F1/02 , H01L23/66 , H03F3/195 , H01L23/00 , H03F3/45
CPC分类号： H03F1/0288 , H01L23/66 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/48247 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/3011 , H03F3/195 , H03F3/45179 , H03F2203/45638 , H03F2203/45731 , H01L2924/00 , H01L2224/45099 , H01L2224/85399 , H01L2224/05599
摘要： The disclosure relates to an amplifier device comprising an integrated circuit die (701a; 701b) having a first amplifier (702a; 702b) and a second amplifier. A Doherty amplifier may be implemented in accordance with the present invention. The amplifier device also comprises a first connector (706a; 706b) having a first end coupled to the first amplifier and a second end for coupling with a circuit board (718a; 718b), a second connector (708a; 708b) having a first end coupled to the second amplifier (704a; 704b) and a second end for coupling with a circuit board (718a; 718b), a shielding member (710a; 710b) having a first end coupled to the integrated circuit die (701a; 701b) and a second end for coupling with a circuit board (718a; 718b), the shielding member (710a; 710b) situated at least partially between the second connector and the first connector (706a; 706b) and a capacitor. The capacitor has a first plate and a second plate. The first plate of the capacitor is configured to be coupled to ground when in use. The second plate of the capacitor is coupled to one of the ends of the shielding member (710a; 710b). The other end of the shielding member (710a; 710b) is configured to be coupled to ground when in use.
摘要翻译：本发明涉及包括具有第一放大器（702a; 702b）和第二放大器的集成电路管芯（701a; 701b）的放大器装置。根据本发明可以实现多赫蒂放大器。放大器装置还包括第一连接器（706a; 706b），其具有耦合到第一放大器的第一端和用于与电路板（718a; 718b）耦合的第二端;第二连接器（708a; 708b），具有第一端耦合到第二放大器（704a; 704b）和用于与电路板（718a; 718b）耦合的第二端，具有耦合到集成电路管芯（701a; 701b）的第一端的屏蔽构件（710a; 710b）和用于与电路板（718a; 718b）耦合的第二端，至少部分地位于第二连接器和第一连接器（706a; 706b）之间的屏蔽构件（710a; 710b）和电容器。电容器具有第一板和第二板。电容器的第一板配置成在使用时与地耦合。电容器的第二板耦合到屏蔽部件（710a; 710b）的一端。屏蔽构件（710a; 710b）的另一端构造成在使用时与地耦合。

2. 发明申请

US20140132353A1 AMPLIFIER CIRCUIT 有权
标题翻译：放大器电路
公开(公告)号：US20140132353A1
公开(公告)日：2014-05-15
申请号：US14080711
申请日：2013-11-14
申请人： NXP B.V.
发明人： Vittorio Cuoco , Josephus Henricus Bartholomeus van der Zanden , Albert Gerardus Wilhelmus Philipus van Zuijlen
IPC分类号： H03F3/68 , H01L21/50
CPC分类号： H03F3/68 , H01L21/50 , H01L23/66 , H01L24/48 , H01L24/49 , H01L2223/6666 , H01L2224/48247 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2924/00014 , H03F1/0288 , H01L2224/45099 , H01L2924/00
摘要： An integrated power amplifier circuit is disclosed. The circuit comprises: first and second amplifiers fabricated on one or more dies, the one or more dies being mounted on a support structure; a first set of one or more connection elements connected to the first amplifier and passing above a portion of the support structure; and a second set of one or more connection elements connected to the second amplifier and passing above a portion of the support structure. The support structure comprises at least one void, at least a portion of the at least one void being positioned directly underneath at least one of the first and second sets of one or more connection elements.
摘要翻译：公开了一种集成功率放大器电路。该电路包括：在一个或多个管芯上制造的第一和第二放大器，一个或多个管芯安装在支撑结构上; 连接到第一放大器并通过支撑结构的一部分的一个或多个连接元件的第一组; 以及连接到第二放大器并且通过支撑结构的一部分的一个或多个连接元件的第二组。所述支撑结构包括至少一个空隙，所述至少一个空隙的至少一部分直接位于所述第一和第二组一个或多个连接元件中的至少一个之下。

3. 发明申请

US20150115343A1 TRANSISTOR ARRANGEMENT 有权
标题翻译：晶体管布置
公开(公告)号：US20150115343A1
公开(公告)日：2015-04-30
申请号：US14524663
申请日：2014-10-27
申请人： NXP B.V.
发明人： Petra Christina Anna Hammes , Josephus Henricus Bartholomeus van der Zanden , Rob Mathijs Heeres , Albert Gerardus Wilhelmus Philipus van Zuijlen
IPC分类号： H01L25/16 , H01L29/78 , H01L23/00 , H01L23/522
CPC分类号： H01L25/16 , H01L23/5223 , H01L23/66 , H01L24/09 , H01L24/48 , H01L24/49 , H01L29/7817 , H01L2223/6611 , H01L2223/6655 , H01L2224/04042 , H01L2224/45015 , H01L2224/48101 , H01L2224/4813 , H01L2224/48157 , H01L2224/48195 , H01L2224/49 , H01L2924/00014 , H01L2924/1205 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2224/45099 , H01L2924/20753 , H01L2224/05599
摘要： A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure.
摘要翻译：一种晶体管装置，包括导电衬底; 包括晶体管结构的半导体本体，所述晶体管结构包括连接到所述衬底的源极端子; 提供与被配置为接收接合线的晶体管结构的连接的接合焊盘; 其中所述半导体主体包括用于承载与所述接合线相关联的返回电流的RF返回电流路径，所述RF返回电流路径包括布置在所述主体上的金属条，所述条被配置成使其延伸到所述接合焊盘下方，并且是连接到晶体管结构的所述源极端子。

4. 发明授权

US09190970B2 Amplifier circuit 有权
标题翻译：放大器电路
公开(公告)号：US09190970B2
公开(公告)日：2015-11-17
申请号：US14080711
申请日：2013-11-14
申请人： NXP B.V.
发明人： Vittorio Cuoco , Josephus Henricus Bartholomeus van der Zanden , Albert Gerardus Wilhelmus Philipus van Zuijlen
IPC分类号： H03F3/68 , H01L21/50 , H01L23/66 , H03F1/02 , H01L23/00
CPC分类号： H03F3/68 , H01L21/50 , H01L23/66 , H01L24/48 , H01L24/49 , H01L2223/6666 , H01L2224/48247 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2924/00014 , H03F1/0288 , H01L2224/45099 , H01L2924/00
摘要： An integrated power amplifier circuit is disclosed. The circuit comprises: first and second amplifiers fabricated on one or more dies, the one or more dies being mounted on a support structure; a first set of one or more connection elements connected to the first amplifier and passing above a portion of the support structure; and a second set of one or more connection elements connected to the second amplifier and passing above a portion of the support structure. The support structure comprises at least one void, at least a portion of the at least one void being positioned directly underneath at least one of the first and second sets of one or more connection elements.
摘要翻译：公开了一种集成功率放大器电路。该电路包括：在一个或多个管芯上制造的第一和第二放大器，一个或多个管芯安装在支撑结构上; 连接到第一放大器并通过支撑结构的一部分的一个或多个连接元件的第一组; 以及连接到第二放大器并且通过支撑结构的一部分的一个或多个连接元件的第二组。所述支撑结构包括至少一个空隙，所述至少一个空隙的至少一部分直接位于所述第一和第二组一个或多个连接元件中的至少一个之下。

5. 发明申请

US20140167858A1 AMPLIFER DEVICE 有权
标题翻译：放大器装置
公开(公告)号：US20140167858A1
公开(公告)日：2014-06-19
申请号：US14109879
申请日：2013-12-17
申请人： NXP B.V.
发明人： Albert Gerardus Wilhelmus Philipus van Zuijlen , Vittorio Cuoco , Josephus Henricus Bartholomeus van der Zanden
IPC分类号： H03F1/02
CPC分类号： H03F1/0288 , H01L23/66 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/48247 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/3011 , H03F3/195 , H03F3/45179 , H03F2203/45638 , H03F2203/45731 , H01L2924/00 , H01L2224/45099 , H01L2224/85399 , H01L2224/05599
摘要： The disclosure relates to an amplifier device comprising an integrated circuit die (701a; 701b) having a first amplifier (702a; 702b) and a second amplifier. A Doherty amplifier may be implemented in accordance with the present invention. The amplifier device also comprises a first connector (706a; 706b) having a first end coupled to the first amplifier and a second end for coupling with a circuit board (718a; 718b), a second connector (708a; 708b) having a first end coupled to the second amplifier (704a; 704b) and a second end for coupling with a circuit board (718a; 718b), a shielding member (710a; 710b) having a first end coupled to the integrated circuit die (701a; 701b) and a second end for coupling with a circuit board (718a; 718b), the shielding member (710a; 710b) situated at least partially between the second connector and the first connector (706a; 706b) and a capacitor. The capacitor has a first plate and a second plate. The first plate of the capacitor is configured to be coupled to ground when in use. The second plate of the capacitor is coupled to one of the ends of the shielding member (710a; 710b). The other end of the shielding member (710a; 710b) is configured to be coupled to ground when in use.
摘要翻译：本发明涉及包括具有第一放大器（702a; 702b）和第二放大器的集成电路管芯（701a; 701b）的放大器装置。根据本发明可以实现多赫蒂放大器。放大器装置还包括第一连接器（706a; 706b），其具有耦合到第一放大器的第一端和用于与电路板（718a; 718b）耦合的第二端;第二连接器（708a; 708b），具有第一端耦合到第二放大器（704a; 704b）和用于与电路板（718a; 718b）耦合的第二端，具有耦合到集成电路管芯（701a; 701b）的第一端的屏蔽构件（710a; 710b）和用于与电路板（718a; 718b）耦合的第二端，至少部分地位于第二连接器和第一连接器（706a; 706b）之间的屏蔽构件（710a; 710b）和电容器。电容器具有第一板和第二板。电容器的第一板配置成在使用时与地耦合。电容器的第二板耦合到屏蔽部件（710a; 710b）的一端。屏蔽构件（710a; 710b）的另一端构造成在使用时与地耦合。

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