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    • 3. 发明专利
    • Method for pretreatment for wafer inspection, and treating device
    • 用于防水检查和处理设备的预处理方法
    • JP2003344243A
    • 2003-12-03
    • JP2002156835
    • 2002-05-30
    • Nisso Engineering Co LtdNse Tekku Kkエヌエスイー・テック株式会社日曹エンジニアリング株式会社
    • NISHIKATA YASUKATSUNAKAZAWA TAKAOISHII TAKEYUKIOTSUKI KAZUFUMIIMAMURA TAKUMI
    • G01N1/00G01N1/28H01L21/306H01L21/66
    • PROBLEM TO BE SOLVED: To enhance analytical precision, to reduce the size of a device, and to allow simplification of control or the like.
      SOLUTION: In this pretreatment method for wafer inspection having a liquid dropping process for dropping a hydrofluoric acid solution on a surface of a silicon wafer W of an inspection object, a liquid collecting process for dissolving a natural oxide film or the like on the surface of the silicon wafer W by the dropped liquid drop to be taken in, and a recovery process for recovering the taken-in liquid drop as a sample for measuring a degree of contamination from the wafer, a common nozzle 2 is used as a nozzle for sucking up the hydrofluoric acid solution used in the liquid dropping process from a container to be dropped on the surface of the silicon wafer, a nozzle for capturing the dropped liquid drop to scan the surface of the silicon wafer, and a nozzle for suction-recovering the liquid drop after the scan as an analyzing sample, the common nozzle 2 is automatically moved to the respective processes under the condition where the nozzle 2 is supported by a nozzle holding and moving mechanism 4, and the nozzle 2 is replaced with a new common nozzle in every silicon wafer of the inspection object.
      COPYRIGHT: (C)2004,JPO
    • 要解决的问题:为了提高分析精度,减小装置的尺寸,并且允许简化控制等。 解决方案:在这种用于将检查对象的硅晶片W的表面上滴加氢氟酸的液滴法的晶片检查预处理方法中,将用于将天然氧化物膜等溶解的液体收集工艺 通过滴入的液滴使硅晶片W的表面被吸入,并且用于回收作为用于测量晶片的污染程度的样本的吸收液滴的恢复处理,公共喷嘴2被用作 从用于滴落在硅晶片表面的容器中吸出用于滴液过程的氢氟酸溶液的喷嘴,用于捕获滴下的液滴以扫描硅晶片的表面的喷嘴和用于抽吸的喷嘴 - 将扫描后的液滴恢复为分析样品,在喷嘴2被喷嘴保持和m保持的状态下,公共喷嘴2自动移动到各个处理 排出机构4,并且在检查对象的每个硅晶片中用新的公共喷嘴代替喷嘴2。 版权所有(C)2004,JPO
    • 4. 发明专利
    • Processing method and processing device before wafer inspection
    • 加工方法和加工方法在进行检测之前
    • JP2003075312A
    • 2003-03-12
    • JP2001266653
    • 2001-09-04
    • Nisso Engineering Co LtdNse Tekku Kkエヌエスイー・テック株式会社日曹エンジニアリング株式会社
    • HARADA MICHIYUKIYONETANI AKIRAKACHI TOSHIMITSUHORIKI YASUYUKINISHIKATA YASUKATSUNAKAZAWA TAKAO
    • G01N1/00G01N1/28H01L21/66
    • PROBLEM TO BE SOLVED: To improve inspection accuracy and workability by facilitating automation of a manual operation and by allowing a naturally oxidized film on the surface of a wafer to be surely and efficiently taken in a hydrofluoric acid droplet dropped at the same time.
      SOLUTION: This processing method and this processing device are used when a hydrofluoric acid is dropped on the surface of a silicon wafer 7 to dissolve and take the naturally oxidized film 7b on the silicon wafer surface in the dropped droplet S, and the droplet S2 is recovered as a sample for measuring the degree of pollution of the silicon wafer. They are provided at least with a droplet dropping means 44 for automatically dropping the hydrofluoric acid droplet S on the silicon wafer surface, a droplet detection means 40 for detecting the position of the droplet S2 after being dropped and moved on the silicon wafer surface, and a jig 60 capable of catching the detected droplet S2 and of sucking and collecting it inside. The jig 60 is movably controlled based on a detection signal of the detection means 40 and catches the detected droplet S2. The droplet can be recovered by sucking and collecting it in the jig 60 after the silicon wafer surface is stroked by the droplet S2.
      COPYRIGHT: (C)2003,JPO
    • 要解决的问题:通过促进手动操作的自动化以及允许在晶片表面上的自然氧化膜可靠地有效地吸收在同时滴下的氢氟酸液滴中来提高检查精度和可加工性。 解决方案:当在硅晶片7的表面上滴加氢氟酸以在滴下的液滴S中溶解并取出硅晶片表面上的自然氧化膜7b时使用该处理方法和该处理装置,并且液滴S2为 作为测量硅晶片污染程度的样品回收。 它们至少设置有用于自动滴落硅晶片表面上的氢氟酸液滴S的液滴滴落装置44,用于在硅晶片表面上下落和移动之后检测液滴S2的位置的液滴检测装置40,以及 夹具60能够捕捉检测到的液滴S2并将其收集并收集在其内部。 夹具60基于检测装置40的检测信号可动地控制,并且捕捉检测到的液滴S2。 通过在硅晶片表面被液滴S2击打之后,通过将其吸收并收集在夹具60中来回收液滴。