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    • 6. 发明专利
    • DE69840043D1
    • 2008-11-06
    • DE69840043
    • 1998-03-19
    • ARASOR ACQUISITION CORPMOORADIAN ARAM
    • MOORADIAN ARAM
    • H01S3/06H01S3/08H01S3/0941H01S3/109H01S3/16H01S5/04H01S5/042H01S5/06H01S5/10H01S5/14H01S5/183H04N9/31
    • In an apparatus and method for generating high power laser radiation, the geometry of the resonant laser cavity defines a fundamental spatial or transverse cavity mode. A gain medium is disposed within the resonant cavity and an energy source energizes the gain medium within a first volume. This causes spontaneous and stimulated energy emission to propagate in the gain medium in a direction transverse to the fundamental cavity mode. The transverse emission in turn optically pumps a second volume of the gain medium about the first volume. When the intensity of the transverse emission is sufficiently high, inversion and gain are produced in the second volume. By optimizing the geometry of the cavity such that the fundamental cavity mode is coupled to both the first and the second volumes encompassing the first pumped volume, the transversely-directed energy of the first volume which would otherwise be wasted is instead captured by the fundamental beam, improving the overall power efficiently of the laser. When configured in an appropriate cavity, the high-power laser of the present invention is especially amenable to frequency conversion of the output beam, as it provides beam intensities suitable for efficient nonlinear frequency conversion.
    • 7. 发明专利
    • AT409362T
    • 2008-10-15
    • AT98915143
    • 1998-03-19
    • MOORADIAN ARAMARASOR ACQUISITION CORP
    • MOORADIAN ARAM
    • H01S3/06H01S3/08H01S3/0941H01S3/109H01S3/16H01S5/04H01S5/042H01S5/06H01S5/10H01S5/14H01S5/183H04N9/31
    • In an apparatus and method for generating high power laser radiation, the geometry of the resonant laser cavity defines a fundamental spatial or transverse cavity mode. A gain medium is disposed within the resonant cavity and an energy source energizes the gain medium within a first volume. This causes spontaneous and stimulated energy emission to propagate in the gain medium in a direction transverse to the fundamental cavity mode. The transverse emission in turn optically pumps a second volume of the gain medium about the first volume. When the intensity of the transverse emission is sufficiently high, inversion and gain are produced in the second volume. By optimizing the geometry of the cavity such that the fundamental cavity mode is coupled to both the first and the second volumes encompassing the first pumped volume, the transversely-directed energy of the first volume which would otherwise be wasted is instead captured by the fundamental beam, improving the overall power efficiently of the laser. When configured in an appropriate cavity, the high-power laser of the present invention is especially amenable to frequency conversion of the output beam, as it provides beam intensities suitable for efficient nonlinear frequency conversion.
    • 9. 发明专利
    • Coupled cavity high power semiconductor laser
    • 联合高功率半导体激光器
    • JP2007235163A
    • 2007-09-13
    • JP2007121200
    • 2007-05-01
    • Novalux Incノバルクス・インコーポレーテッド
    • MOORADIAN ARAM
    • G02F1/017H01S5/187G02F1/03H01S3/107H01S3/109H01S5/06H01S5/065H01S5/10H01S5/14H01S5/183H01S5/40H01S5/42
    • H01S5/18311H01S3/109H01S5/0207H01S5/1021H01S5/141H01S5/18355H01S5/18386H01S5/18388H01S5/423H01S2301/166
    • PROBLEM TO BE SOLVED: To provide a surface emitting coupled cavity semiconductor laser device capable of producing one or more desired spatial modes at higher power levels and with greater device efficiency than those which would be feasible with known prior art VCSELs and VECSELs. SOLUTION: An active gain region sandwiched between a 100% reflective bottom Bragg mirror and an intermediate partially reflecting Bragg mirror is formed on the bottom surface of a substrate, to thereby provide a first (active) resonator cavity of a high power coupled cavity surface emitting laser device. The reflectivity of the intermediate mirror is kept low enough so that laser oscillation within the active gain region will not occur. The substrate is entirely outside the first active resonant cavity, but is contained within a second (passive) resonator cavity defined by the intermediate mirror and a partially reflecting mirror, where the second (passive) resonator cavity is subjected to only a fraction of the light intensity that is circulating in the gain region. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供能够以比已知的现有技术VCSEL和VECSEL可行的那些更高的功率水平和更高的器件效率产生一个或多个期望的空间模式的表面发射耦合腔半导体激光器装置。 解决方案:在基板的底表面上形成夹在100%反射底部布拉格反射镜和中间部分反射布拉格反射镜之间的有源增益区域,从而提供高功率耦合的第一(有源)谐振腔 腔表面发射激光器件。 中间反射镜的反射率保持足够低,从而不会发生主动增益区域内的激光振荡。 衬底完全在第一有源谐振腔的外部,但被包含在由中间反射镜和部分反射镜所限定的第二(无源)谐振器腔内,其中第二(无源)谐振腔仅经受光的一部分 在增益区域中循环的强度。 版权所有(C)2007,JPO&INPIT