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1. 发明申请

WO2011094206A1 SERIES DIODE ELECTRO-THERMAL CIRCUIT FOR ULTRA SENSITIVE SILICON SENSOR 审中-公开
标题翻译：用于超敏感硅传感器的系列二极管电热电路
公开(公告)号：WO2011094206A1
公开(公告)日：2011-08-04
申请号：PCT/US2011/022397
申请日：2011-01-25
申请人： NORTHROP GRUMMAN SYSTEMS CORPORATION , BLUZER, Nathan
发明人： BLUZER, Nathan
IPC分类号： G01J5/00
CPC分类号： H01L27/14649 , G01J5/061 , G01J5/20 , G01J5/24 , H01L27/14603
摘要： Electro-thermal feedback is utilized for reducing the effective thermal conductance between the detector stage of a bolometer pixel in a thermal radiation sensor assembly and the environment through its mechanical support structure and electrical interconnects, thereby coming closer to achieving thermal conductance limited primarily through photon radiation. Minimization of the effective thermal conductance associated with the mechanical support structure and electrical interconnects is achieved by electro¬ thermal feedback that adjusts the temperature of an intermediate stage and the mechanical support structure and electrical interconnects, connecting it to the detector stage, to equal the temperature of the bolometer pixel's detector stage (i.e., by active thermal isolation). Increased temperature sensitivity is preferably achieved through temperature sensing with reverse biased Schottky diodes connected in series.
摘要翻译：电热反馈用于通过其机械支撑结构和电互连来降低热辐射传感器组件中的测辐射热计像素的检测器级与环境之间的有效热导，从而更接近实现主要通过光子辐射限制的导热。通过电热反馈来实现与机械支撑结构和电互连相关联的有效热传导的最小化，其通过调节中间级的温度和机械支撑结构以及将其连接到检测器级的电互连以等于温度的测辐射计像素的检测器级（即，通过有源热隔离）。温度敏感度的提高优选通过串联连接的反向偏置肖特基二极管的温度感测实现。

2. 发明申请

WO2010091153A1 METHOD OF MANUFACTURING A MICRO-ELECTRICAL-MECHANICAL SYSTEM WITH THERMALLY ISOLATED ACTIVE ELEMENTS 审中-公开
标题翻译：制造具有热隔离活性元件的微机电系统的方法
公开(公告)号：WO2010091153A1
公开(公告)日：2010-08-12
申请号：PCT/US2010/023154
申请日：2010-02-04
申请人： NORTHROP GRUMMAN SYSTEMS CORPORATION , BLUZER, Nathan , KRISHNASWAMY, Silai, V. , SMITH, Philip, C.
发明人： BLUZER, Nathan , KRISHNASWAMY, Silai, V. , SMITH, Philip, C.
IPC分类号： H01B13/00
CPC分类号： H01L31/08 , B81B3/0081 , B81B2201/0207 , H01L23/3121 , H01L31/18 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a micro-electrical-mechanical system with thermally isolated active elements. Such a system may embody a bolometer, which is well suited for detecting electromagnetic radiation between 90GHz and 30THz while operating at room temperature. The method also discloses a generalized process for manufacturing circuitry incorporating active and passive micro-electrical-mechanical systems in a silicon wafer.
摘要翻译：一种制造具有热隔离有源元件的微机电系统的方法。这样的系统可以体现一个测辐射热谱仪，适用于在室温下操作时检测90GHz和30THz之间的电磁辐射。该方法还公开了一种用于制造在硅晶片中并入有源和无源微机电系统的电路的通用方法。

3. 发明授权

EP2069735B1 TWO STAGE TRANSFORMER COUPLING FOR ULTRA-SENSITIVE BOLOMETER TYPE RADIATION SENSOR 有权
标题翻译： STAGE变压器耦合的超敏感BOLOMETERARTIGE辐射传感器
公开(公告)号：EP2069735B1
公开(公告)日：2012-01-11
申请号：EP07874504.9
申请日：2007-07-24
申请人： Northrop Grumman Systems Corporation
发明人： BLUZER, Nathan , HARMS, David, C.
IPC分类号： G01J5/20 , G01J5/24
CPC分类号： G01J5/20 , G01J5/08 , G01J5/0837 , G01J5/24 , G01J2005/204
摘要： A bolometer type ultra-sensitive silicon sensor including a detector stage (14), an intermediate stage (16), and a heat bath stage (17). The detector stage, the intermediate stage and a portion of the heat bath stage are generally co-planar and are interconnected by I-beam bridges so as to permit mutually co-planar rotation. Mechanical and electrical coupling is improved between a micro-antenna and the detector stage by a two stage transformer assembly (L1-L2, L5-L6) coupled between the micro-antenna and a detector element of the detector stage.

4. 发明申请

WO2007070122A1 "I" BEAM BRIDGE INTERCONNECTION FOR ULTRA-SENSITIVE SILICON SENSOR 审中-公开
标题翻译： “I”超声感应硅传感器的桥梁互连
公开(公告)号：WO2007070122A1
公开(公告)日：2007-06-21
申请号：PCT/US2006/031900
申请日：2006-08-15
申请人： NORTHROP GRUMMAN CORPORATION , BLUZER, Nathan , HALVIS, James , SHISKOWKI, Robert, R.
发明人： BLUZER, Nathan , HALVIS, James , SHISKOWKI, Robert, R.
IPC分类号： G01J5/20 , G01J5/34 , G01J5/10 , G01J5/00
CPC分类号： G01J5/20
摘要： A bolometer type focal plane is made up of a plurality of silicon sensors. Within each sensor, interconnection between co-planar stages is provided by elongated "I" beam type bridge members having a generally rectangular cross-section including unequal wider (height) and narrower (width) dimensions, and wherein the bridge members are oriented such that the narrower width dimension is in the direction of the common plane and the wider height dimension is perpendicular to the common plane. A sensor with these bridges accommodates stress/strain by rotation while preventing out-of-plane deflection and deformation.
摘要翻译：测辐射热计型焦平面由多个硅传感器组成。在每个传感器内，共平面级之间的互连通过具有大致矩形横截面的细长的“I”梁型桥梁构件提供，其包括不相等的较宽（高度）和较窄（宽度）的尺寸，并且其中桥构件定向成使得较窄的宽度尺寸在公共平面的方向上，较宽的高度尺寸垂直于公共平面。具有这些桥的传感器通过旋转来适应应力/应变，同时防止面外偏转和变形。

5. 发明申请

WO2005043096A1 ULTRA SENSITIVE SILICON SENSOR MILLIMETER WAVE PASSIVE IMAGER 审中-公开
标题翻译：超声感应硅传感器毫米波无源成像器
公开(公告)号：WO2005043096A1
公开(公告)日：2005-05-12
申请号：PCT/US2004/030673
申请日：2004-09-20
申请人： NORTHRUP GRUMMAN CORPORATION , BLUZER, Nathan
发明人： BLUZER, Nathan
IPC分类号： G01J5/20
CPC分类号： G01J5/20
摘要： Electro-thermal feedback is utilized for zeroing the thermal conductance between a bolometer type detector element of a pixel in a thermal radiation sensor assembly and the environments through its mechanical support structure and electrical interconnects, thereby limiting the thermal conductance primarily through photon radiation. Zeroing of the thermal conductance associated with the mechanical support and electrical readout interconnect structures is achieved by electro-thermal feedback that adjust the temperature of an intermediate stage by the heating effect of a bipolar transistor amplifier circuit so that the temperature across the mechanical support and electrical interconnects structures are zeroed thereby greatly improving the thermal isolation, the responsivity and sensitivity of the electromagnetic radiation sensor.
摘要翻译：电 - 热反馈用于使热辐射传感器组件中的像素的辐射热计型探测器元件与通过其机械支撑结构和电互连的环境之间的热传导归零，从而主要通过光子辐射来限制热传导。通过电热反馈实现与机械支撑和电读出互连结构相关联的热传导归零，其通过双极晶体管放大器电路的加热效应来调节中间级的温度，使得机械支撑和电气互连结构被归零，从而大大提高了电磁辐射传感器的热隔离，响应性和灵敏度。

6. 发明申请

WO2008130423A1 TWO STAGE TRANSFORMER COUPLING FOR ULTRA-SENSITIVE BOLOMETER TYPE RADIATION SENSOR 审中-公开
标题翻译：用于超敏感型BOLOMETER型辐射传感器的两级变压器联轴器
公开(公告)号：WO2008130423A1
公开(公告)日：2008-10-30
申请号：PCT/US2007/074252
申请日：2007-07-24
申请人： NORTHROP GRUMMAN CORPORATION , BLUZER, Nathan , HARMS, David, C.
发明人： BLUZER, Nathan , HARMS, David, C.
IPC分类号： G01J5/20 , G01J5/24
CPC分类号： G01J5/20 , G01J5/08 , G01J5/0837 , G01J5/24 , G01J2005/204
摘要： A bolometer type ultra-sensitive silicon sensor including a detector stage (14), an intermediate stage (16), and a heat bath stage (17). The detector stage, the intermediate stage and a portion of the heat bath stage are generally co-planar and are interconnected by I-beam bridges so as to permit mutually co-planar rotation. Mechanical and electrical coupling is improved between a micro-antenna and the detector stage by a two stage transformer assembly (L1-L2, L5-L6) coupled between the micro-antenna and a detector element of the detector stage.
摘要翻译：包括检测器级（14），中间级（16）和热浴级（17）的测辐射热计型超灵敏硅传感器。检测器级，中间级和热浴级的一部分通常是共面的，并且通过I型梁桥互连，以允许相互共面旋转。通过耦合在微天线和检测器级的检测器元件之间的两级变压器组件（L1-L2，L5-L6）在微天线和检测器级之间改进机电耦合。

7. 发明公开

EP2394274A1 METHOD OF MANUFACTURING A MICRO-ELECTRICAL-MECHANICAL SYSTEM WITH THERMALLY ISOLATED ACTIVE ELEMENTS 审中-公开
标题翻译：用于生产微电气/机械系统具有绝缘有源元件
公开(公告)号：EP2394274A1
公开(公告)日：2011-12-14
申请号：EP10739104.7
申请日：2010-02-04
申请人： Northrop Grumman Systems Corporation
发明人： BLUZER, Nathan , KRISHNASWAMY, Silai, V. , SMITH, Philip, C.
IPC分类号： H01B13/00
CPC分类号： H01L31/08 , B81B3/0081 , B81B2201/0207 , H01L23/3121 , H01L31/18 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a micro-electrical-mechanical system with thermally isolated active elements. Such a system may embody a bolometer, which is well suited for detecting electromagnetic radiation between 90GHz and 30THz while operating at room temperature. The method also discloses a generalized process for manufacturing circuitry incorporating active and passive micro-electrical-mechanical systems in a silicon wafer.

8. 发明公开

EP1971839A1 "I" BEAM BRIDGE INTERCONNECTION FOR ULTRA-SENSITIVE SILICON SENSOR 审中-公开
标题翻译：我梁桥式连接对于超灵敏的硅传感器
公开(公告)号：EP1971839A1
公开(公告)日：2008-09-24
申请号：EP06789783.5
申请日：2006-08-15
申请人： Northrop Grumman Systems Corporation
发明人： BLUZER, Nathan , HALVIS, James , SHISKOWKI, Robert, R.
IPC分类号： G01J5/20 , G01J5/34 , G01J5/10 , G01J5/00
CPC分类号： G01J5/20
摘要： A bolometer type focal plane is made up of a plurality of silicon sensors. Within each sensor, interconnection between co-planar stages is provided by elongated 'I' beam type bridge members having a generally rectangular cross-section including unequal wider (height) and narrower (width) dimensions, and wherein the bridge members are oriented such that the narrower width dimension is in the direction of the common plane and the wider height dimension is perpendicular to the common plane. A sensor with these bridges accommodates stress/strain by rotation while preventing out-of-plane deflection and deformation.

9. 发明申请

WO2006041798A1 LOW NOISE FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：低噪声场效应晶体管
公开(公告)号：WO2006041798A1
公开(公告)日：2006-04-20
申请号：PCT/US2005/035568
申请日：2005-10-04
申请人： NORTHROP GRUMMAN CORPORATION , BLUZER, Nathan
发明人： BLUZER, Nathan
IPC分类号： H01L29/78 , H01L29/10 , H01L29/06 , H01L21/74
CPC分类号： H01L29/1087 , H01L21/743 , H01L29/06 , H01L29/7838
摘要： An FET (field effect transistor) having source, drain and channel regions of a conductivity type in a semiconductor body of opposite conductivity type. The channel region is located at the lower extremity of the source and drain regions so as to be spaced from the surface of the semiconductor body by a distanced.
摘要翻译：具有导电类型的源极，漏极和沟道区的FET（场效应晶体管）在相反导电类型的半导体本体中。沟道区域位于源区和漏区的下端，以便与半导体本体的表面间隔开。

10. 发明申请

WO2006039679A2 SENSITIVE SILICON SENSOR AND TEST STRUCTURE FOR AN ULTRA-SENSITIVE SILICON SENSOR 审中-公开
标题翻译：用于超灵敏硅传感器的灵敏硅传感器和测试结构
公开(公告)号：WO2006039679A2
公开(公告)日：2006-04-13
申请号：PCT/US2005/035570
申请日：2005-10-04
申请人： NORTHROP GRUMMAN CORPORATION , BLUZER, Nathan
发明人： BLUZER, Nathan
IPC分类号： G01J5/20
CPC分类号： G01J5/22 , G01J5/20 , G01J5/24 , G01K17/003
摘要： A thermal radiation sensor is disclosed herein a semiconductor thermocouple comprised of a pair of silicon diodes is connected in back-to-back relationship, with one of the diodes being located in a detector stage. The other diode is located in a heat bath stage together with a sensed temperature difference amplifier. The detector stage is thermally isolated from the heat bath stage by a low thermal conductivity link that includes electrical wires which connect the back-to-back diodes to the amplifier.
摘要翻译：本文公开了一种热辐射传感器，其中由一对硅二极管组成的半导体热电偶以背靠背关系连接，其中一个二极管位于检测器级中。另一个二极管与感测的温差放大器一起位于热浴阶段。探测器台通过低热导率连接与热浴台热隔离，所述连接包括将背对背二极管连接到放大器的电线。

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