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1. 发明专利

GB1087363A High frequency diode 未知
公开(公告)号：GB1087363A
公开(公告)日：1967-10-18
申请号：GB3698865
申请日：1965-08-27
申请人： NORTH AMERICAN AVIATION INC
发明人： ANDERSON DEAN BROWN , AUGUST RUDOLF ROBERT , AUKLAND JERRY CARR , PALMQUIST RICHARD LEE
IPC分类号： H01L21/24 , H01L29/00
摘要： 1,087,363. High-frequency diode. NORTH AMERICAN AVIATION Inc. Aug. 27, 1965, No. 36988/65. Heading H1K. [Also in Division H3] A high-frequency diode for operation down to 10 GHz, comprises a body of semi-conductor material of one conductivity type, a diffused island of opposite conductivity and an ohmic connection surrounding the island, the depth of the diffused junction being not less than " skin depth " at the lower end of the operating frequency whereby current flow through the junction is limited to the periphery of the island. This type of diode is said to have low capacitance. Skin depth is defined as the depth at which the field strength is 37% of the field strength at the surface of the material. A slab 12c of N-type GaAs or Si has a diffused island 30 of P-type material formed therein which is surrounded by an ohmic contact of gold 34. A gold contact 38 is used on wire 36 while a film of silicon oxide 40 covers the slab 12c. The gold film 34 may be extended to cover the sides of slab 12c (as in Figs. 4 and 5, not shown) whilst the island 30 may be oval, square, star or rosette. A light-sensitive diode (Fig. 6, not shown) may also be made wherein the capacitance is varied according to the light received. Other forms of diode may be light emitting, switching and backward diodes. In another embodiment a varactor diode is used in a parametric amplifier (Fig. 4, not shown), the slab 12c acting as a resonant cavity.

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