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1. 发明授权

EP2738794B1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 有权转让
公开(公告)号：EP2738794B1
公开(公告)日：2018-09-12
申请号：EP12818068.4
申请日：2012-07-27
申请人： Nissan Motor Co., Ltd. , Sumitomo Metal Mining Co., Ltd. , Fuji Electric Co., Ltd.
发明人： TANIMOTO, Satoshi , ZUSHI, Yusuke , MURAKAMI, Yoshinori , ISEKI, Takashi , TAKAMORI, Masato , MATSUI, Kohei
IPC分类号： H01L21/52 , B23K35/28 , C22C18/04 , B23K1/20 , B23K1/008 , B23K1/19
CPC分类号： H01L29/1602 , B23K1/0016 , B23K1/008 , B23K1/19 , B23K1/206 , B23K35/007 , B23K35/025 , B23K35/282 , B23K35/286 , B23K2101/34 , B23K2101/40 , B23K2101/42 , C22C18/04 , H01L24/29 , H01L24/32 , H01L24/83 , H01L29/1608 , H01L29/2003 , H01L2224/29118 , H01L2224/32225 , H01L2224/83001 , H01L2224/83203 , H01L2224/83447 , H01L2224/83815 , H01L2924/01322 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/15747 , H01L2924/15787 , H01L2924/01013 , H01L2924/0103 , H01L2924/00
摘要： A method for manufacturing a semiconductor device comprising: a step for readying each of a semiconductor element (1), a substrate (2) having Cu as a principal element at least on a surface, and a ZnAl solder chip (3') having a smaller shape than that of the semiconductor element; a step for disposing the semiconductor element and the substrate so that respective bonding surfaces face each other, and sandwiching the ZnAl eutectic solder chip between the substrate and the semiconductor element; a step for increasing the temperature of the ZnAl solder chip sandwiched between the substrate and the semiconductor element while applying a load (31) to the ZnAl solder chip, causing the ZnAl solder chip to melt, and forming a ZnAl solder layer (3); and a step for reducing the temperature of the ZnAl solder layer while applying a load to the ZnAl solder layer.

2. 发明授权

EP2712085B1 SWITCHING CIRCUIT AND SEMICONDUCTOR MODULE 有权
标题翻译：电路和半导体模块
公开(公告)号：EP2712085B1
公开(公告)日：2016-02-03
申请号：EP12781783.1
申请日：2012-05-11
申请人： NISSAN MOTOR CO., LTD. , Fuji Electric Co., Ltd.
发明人： ZUSHI, Yusuke , MURAKAMI, Yoshinori , TANIMOTO, Satoshi , SATO, Shinji , MATSUI, Kohei
IPC分类号： H01L29/12 , H01L29/78 , H02M1/08 , H03K17/687 , H03K17/695 , H03K17/0412
CPC分类号： H01L27/0629 , H01L27/0682 , H01L2224/48091 , H01L2224/48137 , H01L2224/49111 , H01L2924/19105 , H02M1/08 , H03K17/04123 , H03K17/166 , H01L2924/00014

3. 发明授权

EP2750184B1 SEMICONDUCTOR MODULE 有权
公开(公告)号：EP2750184B1
公开(公告)日：2020-10-07
申请号：EP12825114.7
申请日：2012-08-24
申请人： NISSAN MOTOR CO., LTD. , Fuji Electric Co., Ltd.
发明人： ZUSHI, Yusuke , MURAKAMI, Yoshinori , TANIMOTO, Satoshi , MATSUI, Kohei
IPC分类号： H01L23/36 , H01L23/373 , H01L25/18 , H01L25/07 , H01L23/498

4. 发明公开

EP2750184A1 SEMICONDUCTOR MODULE 有权
标题翻译： HALBLEITERMODUL
公开(公告)号：EP2750184A1
公开(公告)日：2014-07-02
申请号：EP12825114.7
申请日：2012-08-24
申请人： Nissan Motor Co., Ltd , Fuji Electric Co., Ltd.
发明人： ZUSHI, Yusuke , MURAKAMI, Yoshinori , TANIMOTO, Satoshi , SATO, Shinji , MATSUI, Kohei
IPC分类号： H01L23/36 , H01L25/07 , H01L25/18
摘要： A semiconductor module has a pair of semiconductor devices 16, 18 that are connected in series with each other and have first terminals 12, 14 electrically connected to a first power system BT and a second terminal 13 electrically connected to a second power system M, a heat sink 7, a first electrode 10 that is electrically connected both to the first terminal 12, that is one of the first terminals, and to one of electrodes of the semiconductor device 16, that is one of the pair of semiconductor devices, an output electrode 11 that is electrically connected both to the second terminal 13 and to one of electrodes of the semiconductor device 18, that is the other one of the pair of semiconductor devices, and a second electrode 9 that is electrically connected to the first terminal 14, that is the other one of the first terminals. The second electrode 9 is connected to the heat sink 7 via a first insulating member 8a, and the output electrode 11 is connected to the second electrode 9 via a second insulating member 8b.
摘要翻译：半导体模块具有彼此串联连接的一对半导体器件16,18，并且具有电连接到第一电力系统BT的第一端子12,14和与第二电力系统M电连接的第二端子13，散热器7，与作为第一端子之一的第一端子12电连接的第一电极10以及作为一对半导体器件中的一个的半导体器件16的一个电极，输出电连接到第二端子13和半导体器件18的电极之一的电极11，半导体器件18的一个半导体器件中的另一个以及与第一端子14电连接的第二电极9，那是第一个终端的另一个。第二电极9经由第一绝缘构件8a与散热器7连接，输出电极11经由第二绝缘构件8b与第二电极9连接。

5. 发明公开

EP2712085A1 SWITCHING CIRCUIT AND SEMICONDUCTOR MODULE 有权
标题翻译： SCHALTKREIS UND HALBLEITERMODUL
公开(公告)号：EP2712085A1
公开(公告)日：2014-03-26
申请号：EP12781783.1
申请日：2012-05-11
申请人： NISSAN MOTOR CO., LTD. , Fuji Electric Co., Ltd.
发明人： ZUSHI, Yusuke , MURAKAMI, Yoshinori , TANIMOTO, Satoshi , SATO, Shinji , MATSUI, Kohei
IPC分类号： H03K17/16 , H01L29/12 , H01L29/78 , H02M1/08 , H03K17/687 , H03K17/695
CPC分类号： H01L27/0629 , H01L27/0682 , H01L2224/48091 , H01L2224/48137 , H01L2224/49111 , H01L2924/19105 , H02M1/08 , H03K17/04123 , H03K17/166 , H01L2924/00014
摘要： A switching circuit includes: a first switching element (Q1); a resistor (11) inserted between a control electrode (G) of the first switching element (Q1) and a control circuit (13) which performs switching control on the first switching element (Q1); and a first capacitor (15) and a second switching element (14) connected between the control electrode (G) of the first switching element (Q1) and a low potential-side electrode (S) of the first switching element (Q1). A high potential-side electrode of the second switching element (14) is connected to the control electrode (G) of the first switching element (Q1). A low potential-side electrode of the second switching element (14) is connected to one electrode of the first capacitor (15). The other electrode of the first capacitor (15) is connected to the low potential-side electrode (S) of the first switching element (Q1). A control electrode of the second switching element (14) is connected to an electrode of the resistor (11) connected to the control circuit (13).
摘要翻译：开关电路包括：第一开关元件（Q1）; 插入在第一开关元件（Q1）的控制电极（G）和对第一开关元件（Q1）进行开关控制的控制电路（13）之间的电阻器（11）; 以及连接在第一开关元件（Q1）的控制电极（G）和第一开关元件（Q1）的低电位侧电极（S）之间的第一电容器（15）和第二开关元件（14）。第二开关元件（14）的高电位侧电极连接到第一开关元件（Q1）的控制电极（G）。第二开关元件（14）的低电位侧电极连接到第一电容器（15）的一个电极。第一电容器（15）的另一个电极连接到第一开关元件（Q1）的低电位侧电极（S）。第二开关元件（14）的控制电极连接到与控制电路（13）连接的电阻器（11）的电极。

6. 发明公开

EP3764529A1 METHOD FOR CONTROLLING RESONANT POWER CONVERSION DEVICE, RESONANT POWER CONVERSION DEVICE, AND DC-DC CONVERTER 有权
公开(公告)号：EP3764529A1
公开(公告)日：2021-01-13
申请号：EP18909189.5
申请日：2018-03-07
申请人： NISSAN MOTOR CO., LTD.
发明人： KAI, Toshihiro , YAMAGAMI, Shigeharu , HAYASHI, Tetsuya , ZUSHI, Yusuke , SHIMOMURA, Taku
IPC分类号： H02M3/155
摘要： The present disclosure includes by controlling at least either one of a switching frequency of a switching element (S) or a duty ratio indicating an ON period of the switching element, securing delay time from voltage at both ends of the switching element reaches zero voltage by resonance of the resonant circuit (L 0 , C 0 ) in an OFF state of the switching element until the switching element is turned on, and turning on the switching element within the delay time.

7. 发明公开

EP2738794A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 有权转让
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUMMENTS UND HALBLEITERBAUELEMENT
公开(公告)号：EP2738794A1
公开(公告)日：2014-06-04
申请号：EP12818068.4
申请日：2012-07-27
申请人： Nissan Motor Company, Limited , Sumitomo Metal Mining Co., Ltd. , Fuji Electric Co., Ltd. , Fuji Electric Co., Ltd.
发明人： TANIMOTO, Satoshi , ZUSHI, Yusuke , MURAKAMI, Yoshinori , ISEKI, Takashi , TAKAMORI, Masato , SATO, Shinji , MATSUI, Kohei
IPC分类号： H01L21/52 , B23K35/28 , C22C18/04
CPC分类号： H01L29/1602 , B23K1/0016 , B23K1/008 , B23K1/19 , B23K1/206 , B23K35/007 , B23K35/025 , B23K35/282 , B23K35/286 , B23K2101/34 , B23K2101/40 , B23K2101/42 , C22C18/04 , H01L24/29 , H01L24/32 , H01L24/83 , H01L29/1608 , H01L29/2003 , H01L2224/29118 , H01L2224/32225 , H01L2224/83001 , H01L2224/83203 , H01L2224/83447 , H01L2224/83815 , H01L2924/01322 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/15747 , H01L2924/15787 , H01L2924/01013 , H01L2924/0103 , H01L2924/00
摘要： A method for manufacturing a semiconductor device comprising: a step for readying each of a semiconductor element (1), a substrate (2) having Cu as a principal element at least on a surface, and a ZnAl solder chip (3') having a smaller shape than that of the semiconductor element; a step for disposing the semiconductor element and the substrate so that respective bonding surfaces face each other, and sandwiching the ZnAl eutectic solder chip between the substrate and the semiconductor element; a step for increasing the temperature of the ZnAl solder chip sandwiched between the substrate and the semiconductor element while applying a load (31) to the ZnAl solder chip, causing the ZnAl solder chip to melt, and forming a ZnAl solder layer (3); and a step for reducing the temperature of the ZnAl solder layer while applying a load to the ZnAl solder layer.
摘要翻译：一种半导体器件的制造方法，其特征在于，包括以下工序：将至少在表面上具有Cu作为主要元素的半导体元件（1），基板（2）以及ZnAl焊料芯片（3'），比半导体元件小的形状; 用于将所述半导体元件和所述基板设置为使得各个接合面彼此面对并将所述ZnAl共晶焊料芯片夹在所述基板和所述半导体元件之间的步骤; 在向ZnAl焊料芯片施加负载（31）的同时，夹持在基板和半导体元件之间的ZnAl焊料芯片的温度升高的步骤，使ZnAl焊料芯片熔化，形成ZnAl焊料层（3）。以及在向ZnAl焊料层施加负载的同时降低ZnAl焊料层的温度的步骤。

8. 发明授权

EP3059847B1 POWER CONVERSION DEVICE AND POWER CONVERSION METHOD 有权
公开(公告)号：EP3059847B1
公开(公告)日：2020-04-08
申请号：EP14854500.7
申请日：2014-10-02
申请人： NISSAN MOTOR CO., LTD.
发明人： ZUSHI, Yusuke , CLARE, Jon C , WATSON, Alan
IPC分类号： H02M7/48 , B60L15/00 , H02M7/49 , H02J7/00 , B60L50/51 , B60L58/21

9. 发明授权

EP2819291B1 POWER-SUPPLY DEVICE AND CONTROL METHOD THEREFOR 有权
标题翻译：电源装置及其控制方法
公开(公告)号：EP2819291B1
公开(公告)日：2017-05-10
申请号：EP13751598.7
申请日：2013-02-22
申请人： NISSAN MOTOR CO., LTD. , Kawamura, Atsuo
发明人： KAWAMURA, Atsuo , ZUSHI, Yusuke , FUKUSHIGE, Takashi , SHIBUKAWA, Yuichi , SASAKI, Kensuke
IPC分类号： H02M3/28 , B60L3/00 , H02M7/5387 , B60L11/18
CPC分类号： H02P6/28 , B60L3/0046 , B60L7/14 , B60L11/005 , B60L11/1803 , B60L15/007 , B60L2210/10 , B60L2240/547 , B60L2240/549 , H02M3/33576 , H02M2001/0093 , Y02T10/645 , Y02T10/7005 , Y02T10/7022 , Y02T10/7216

10. 发明公开

EP3496137A1 SEMICONDUCTOR CAPACITOR 有权
公开(公告)号：EP3496137A1
公开(公告)日：2019-06-12
申请号：EP16911662.1
申请日：2016-08-05
申请人： Nissan Motor Co., Ltd.
发明人： HAYAMI, Yasuaki , HAYASHI, Tetsuya , ZUSHI, Yusuke , NI, Wei , OKUBO, Akinori
IPC分类号： H01L21/822 , H01L27/04
摘要： To meet various requirements with a circuit formed from a semiconductor substrate.
The present invention is provided with a semiconductor substrate (2A), an electrode group (4) that is formed on the semiconductor substrate (2A), and insulators (2B), wherein a plurality of capacitors (C1-C3) are formed. The plurality of capacitors (C1-C3) have a structure in which the insulators (2B) are sandwiched between each electrode of the electrode group (4). At least one of the plurality of capacitors (C1-C3) is set to be different in at least one of a tolerance, which is a capability of the capacitors (C1-C3) to withstand a prescribed voltage, and a conductance, which is an ease with which a leakage current flows in the capacitors (C1-C3).

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