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    • 3. 发明专利
    • SEMICONDUCTOR ABRASIVE MATERIAL
    • JP2001077061A
    • 2001-03-23
    • JP24945699
    • 1999-09-03
    • SEIMI CHEM KK
    • FUJIE YOSHIAKITSUGITA KATSUYUKI
    • B24B37/00C09K3/14H01L21/304
    • PROBLEM TO BE SOLVED: To enable a metal layer and/or a barrier layer to be flattened by a method wherein the metal layer and/or the barrier layer formed on a semicon ductor substrate is polished with abrasive material, which contains abrasive grains of cerium oxide particles specified in weight-average grain diameter and average crystal grain diameter. SOLUTION: Cerium oxide particles as abrasive grains contained in abrasive material are 0.1 to 0.3 μm in weight-average grain diameter. A weight-average grain diameter denotes a grain diameter at a point where a cumulative curve gets 50% when all the mass of the abrasvie grains is represented by 100%, in a case where a grain size distribution is obtained on a mass basis. The average crystal grain diameter of a cerium oxide ranges from 150 to 600 Å. The average crystal grain diameter denotes the size of crystal grains obtained through an X-ray diffractometry and is calculated through a Sheller's formula based on the expansion of a peak that indicates the maximum intensity of an X-ray diffraction pattern. A cerium oxide can be obtained through such a manner where material such as rare earth carbonate is fired in an electric furnace.