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1. 发明专利

CA1062934A SEMI-HARD MAGNETIC ALLOY AND METHOD OF MAKING 未知
公开(公告)号：CA1062934A
公开(公告)日：1979-09-25
申请号：CA234127
申请日：1975-08-22
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TOMISHIMA HIROSHI , TAKAHASHI TOSHIO , ONO KENICHI , KUMASAKA KAZUHIRO
IPC分类号： C22C38/00 , C21D8/12 , C22C30/00 , C22C38/10 , C22C38/52 , C22F1/00 , C22F1/10 , H01F1/04 , H01F1/047 , C22F1/18
摘要： A semi-hard magnetic alloy is disclosed which consists of, by weight 15 to 50 % Co, 5 to 25 % Ni, 1 to 9 % cr, up to 10 % of at least one element selected from cu and Ti, the remainder being Fe and incidental impurities. The alloy has a composite hysteresis characteristic which changes in a stairstep manner in the vicinity of the H-axis. The alloy is produced by repetitive cold-working and subsequent annealing steps, the annealing steps being carried out at 450.degree.C to 750.degree.C.

2. 发明专利

JPH05330986A PRODUCTION OF THIN FILM OF DIAMOND 失效
公开(公告)号：JPH05330986A
公开(公告)日：1993-12-14
申请号：JP14029492
申请日：1992-06-01
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MATSUOKA SHIGETO , HOSHINO KOICHI , ONO KENICHI
IPC分类号： C30B23/08 , C30B29/04 , H01L25/10
摘要： PURPOSE:To inexpensively and readily form a high-quality thin film of diamond on a substrate of large area by subjecting a hydrogen-containing gas to plasma discharge with a microwave and sputtering a solid carbon material containing a given doping component. CONSTITUTION:A microwave is sent from a microwave inlet pipe 5 through an inlet window 4 to a plasma forming chamber 1 and a plasma discharge gas supplied from a gas induction pipe 6 is made into plasma by electric discharge. The plasma is sent downward by a magnetic flux 12 of a magnetic coil 3 and a carbonaceous target 7 to which a negative voltage is impressed is sputtered. The sputtering particles are deposited on a substrate 9 at a given temperature to form a thin film of diamond. In the production of the above- mentioned thin film of diamond, carbon or a solid carbon material containing. carbon and further a given doping component is used as the target 7. A hydrogen gas or a mixed gas of hydrogen and an inert gas such as He, Ne, Ar, Kr or Xe is used as the plasma discharge gas.

3. 发明专利

JPH0443316A MAGNETO-OPTICAL THIN-FILM MATERIAL 失效
公开(公告)号：JPH0443316A
公开(公告)日：1992-02-13
申请号：JP15223790
申请日：1990-06-11
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： INUKAI TAKASHI , MINO SHINJI , MATSUOKA SHIGETO , ONO KENICHI
IPC分类号： G02F1/09
摘要： PURPOSE:To obtain the magneto-optical thin-film material which allows the control of magnetic anisotropy and has a large Faraday effect by specifying the ratio of Ce of a compd. expressed by compsn. formula Bi3-XCeXFe5O12. CONSTITUTION:The thin film of the Bi3-XCeXFe5O12 is formed on an Nd3Ga5O12 substrate by an rf sputtering method using a ceramic target consisting of the Bi3-XCeXFe5O12 and Bi2O3. The ratio X of the Ce of this time is so specified as to be within a 0

4. 发明专利

JPH03134602A WAVEGUIDE TYPE OPTICAL CIRCULATOR 失效
公开(公告)号：JPH03134602A
公开(公告)日：1991-06-07
申请号：JP27184489
申请日：1989-10-20
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SUGIMOTO NAOTO , SHIBUKAWA ATSUSHI , ONO KENICHI
IPC分类号： G02B27/28 , G02B6/12
摘要： PURPOSE:To exclude dependence on polarization and to miniaturize an element by combining a reciprocal mode converter, a non-reciprocal mode converter, and a mode selecting part. CONSTITUTION:The guide light made incident on a core part from an incidence/ exit part 1 has the quasi-TE mode and the quasi-TM mode separated to a waveguide a and a waveguide b respectively in a selecting part 8 and is made incident on a non-reciprocal mode converting part 9, and respective guided light are subjected to 50% mode conversion and are propagated to a reciprocal mode converting part 10 and are converted to 100% quasi-TE mode and 100% quasi-TM mode by waveguides a and b respectively and are made incident on a selecting part 8', and the quasi-TM mode in the waveguide b has the power shifted to the waveguide a by 100% and is emitted to an incidence/exit part 2 together with the quasi-TE mode. The guided light from the incidence/ exit part 2 to a core part 14 is emitted to an incidence/exit part 3 through the selecting part 8'. The converting part 10, and a selecting part 8. The guided light from the incidence/exit part 3 is emitted from an incidence/exit part 4, and the guided light from the incidence/exit part 4 is emitted to an incidence/ exit part 1, and this element functions as an optical circulator.

5. 发明专利

JPH0375605A WAVEGUIDE TYPE OPTICAL ISOLATOR 失效
公开(公告)号：JPH0375605A
公开(公告)日：1991-03-29
申请号：JP21071389
申请日：1989-08-17
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SUGIMOTO NAOTO , SHIBUKAWA ATSUSHI , ONO KENICHI
IPC分类号： G02B6/12
摘要： PURPOSE:To provide the smaller and more economical element by using a waveguide type halfwave plate, for which the stress relief groove easily formable by a known working method is used, in a reciprocal mode converting part. CONSTITUTION:Mode selecting parts 9, 9' are constituted by loading a thin metallic film 8 on a clad layer 12 of a three-dimensional flush type single mode waveguide and operates to allow the transmission of a TE mode and to absorb a TM mode. The non-reciprocal mode converting part 10 is constituted of a magnetic garnet flush type waveguide 15 applied with a magnetic field 17 in the direction parallel with a ray 3 by a coil or magnet. The reciprocal mode converting part 11 is constituted by inclining the double refractive main axis direction 18 in a core part 13 by 22.5 deg. to the stress relief groove 14 side perpen dicularly to the propagation direction of light and from the normal direction 7 of the film plane by the stress relief groove 14 blanked in a pat of the clad layer 12 near the core part 13. The waveguide type halfwave plate is formed by specifying the length of the stress relief groove 14 to a prescribed length. The small-sized and low-cost three-dimensional waveguide type optical isolator is obtd. in this way.

6. 发明专利

JPH02267199A DILUTE MAGNETIC SEMICONDUCTOR THIN FILM 失效
公开(公告)号：JPH02267199A
公开(公告)日：1990-10-31
申请号：JP8944989
申请日：1989-04-07
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： INUKAI TAKASHI , SUGIMOTO NAOTO , ONO KENICHI
IPC分类号： G02F1/09 , C30B29/46
摘要： PURPOSE:To provide a single crystal, excellent in crystallinity and capable of guiding wave propagation of light by providing a gap between a GaAs substrate and a Cd-Mn-Te thin film with a thin film of a specific zincblende type crystal structure. CONSTITUTION:A thin film obtained by providing a thin film of a zincblende type crystal structure consisting of a composition formula ZnSe1-ySy (y is 0

7. 发明专利

JPH01219161A ION SOURCE 失效
公开(公告)号：JPH01219161A
公开(公告)日：1989-09-01
申请号：JP4421588
申请日：1988-02-29
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MATSUOKA SHIGETO , ONO KENICHI
IPC分类号： H01L21/203 , C23C14/22 , C23C14/46 , H01J27/16 , H01J37/08 , H01J37/305 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To stably and continuously form metal ions by providing targets to both ends of the inside of a plasma production chamber, respectively, to impress negative voltages on these targets, forming a magnetic field in the plasma production chamber, and also providing a magnetic flux-forming means between the targets. CONSTITUTION:Microwaves are supplied through a microwave-introducing window 6 into a plasma production chamber 11. An annular target 16 is provided to the top inside the plasma production chamber 11, and a cylindrical target 13 is provided to the vicinity of an ion leading grid 14. Negative voltages are impressed on both targets 13, 16 from D.C. electric power sources 13A, 16A, respectively. Then, an electromagnet 8 is provided to the outside periphery of the plasma production chamber 11, by which a magnetic field is generated in the plasma production chamber 11. magnetic fluxes 5 formed by the electromagnet 8 are regulated so that they come out of one target and enter another target. The magnetic field of the electromagnet 8 prevents the formed ions and electrons from dissipating in a direction perpendicular to the magnetic field and produces high-density plasma in a low gas pressure. The ions in the above plasma are drawn in the form of an ion beam.

8. 发明专利

JPS6456870A THIN FILM FORMING DEVICE 失效
公开(公告)号：JPS6456870A
公开(公告)日：1989-03-03
申请号：JP21490087
申请日：1987-08-28
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MATSUOKA SHIGETO , ONO KENICHI
IPC分类号： C23C14/36 , C23C14/35 , H01L21/203 , H01L21/285
摘要： PURPOSE:To form a good-quality thin film at high velocity with high efficiency by successively providing the waveguide of microwave, a vacuum waveguide, a plasma formation chamber and a sample chamber under specified conditions and constituting a thin film forming device. CONSTITUTION:A vacuum chamber 4 consists of a vacuum waveguide 10, a plasma formation chamber 11, the end part 16 thereof and a sample chamber 9 and the waveguide 10 is made to an L-shape and connected with the waveguide 7 of microwave via a window 6 and both a yoke 12 made of magnetic soft iron for absorbing a magnetic flux and electromagnets 8 for generating a magnetic field are provided around the waveguide 10. Further the formation chamber 11 has diameter and length for forming a microwave cavity resonator in which microwave is resonated and the electromagnets 8 more than a pair are provided to the outer peripheral both ends and a mirror field is formed so that magnetic flux density is made extremely small. Furthermore a cylindrical target 13 for impressing negative voltage is provided to the inner wall of the formation chamber 11 and ring-shaped permanent magnets 14 more than a pair having reversed polarities are provided to the outsides of the upper and lower both ends of the target 13 and a magnetic flux is leaked to the inside surface of the target 13 and a substrate 2 is placed on a base plate holder of the sample chamber 9. Thereby a high-purity thin film having good quality is formed on the low-temp. substrate 2.

9. 发明专利

JPS6431336A ION SOURCE 失效
公开(公告)号：JPS6431336A
公开(公告)日：1989-02-01
申请号：JP18734487
申请日：1987-07-27
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MATSUOKA SHIGETO , ONO KENICHI
IPC分类号： H01J27/16 , H01J37/08 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To extract ions continuously and stably for a long time regardless of an object material by forming plasma via the electron cycrotron resonance in the mirror magnetic field and protecting a microwave guiding window from the fouling by plasma. CONSTITUTION:A plasma generating chamber 11 has the shape and size to act as a microwave resonance cavity, and microwaves are guided via a microwave wave guide 7, a vacuum wave guide 10, and a microwave guiding window 6. The mirror magnetic field is formed in the generating chamber 11 to minimize the magnetic flux density by an electromagnet 8 arranged around the generating chamber 11. The vacuum wave guide 10 is arranged in the rectangular direction to the magnetic flux direction formed by the electromagnet 8 and has at least a bent section. The microwave guiding window connected to the vacuum wave guide 10 is thereby protected from the fouling by plasma, and ions are continuously extracted for a long time.

10. 发明专利

JPS6425978A FORMING DEVICE FOR THIN FILM 失效
公开(公告)号：JPS6425978A
公开(公告)日：1989-01-27
申请号：JP18025787
申请日：1987-07-20
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MATSUOKA SHIGETO , ONO KENICHI
IPC分类号： H01L21/203 , C23C14/35 , C23C14/36
摘要： PURPOSE:To continuously form an excellent-quality thin film at the low base plate temp. at high speed with high efficiency stably in a long time by introducing microwaves into a specified plasma formation chamber, resonating them, and generating plasma in a mirror magnetic field gradient via a target impressed with negative voltage. CONSTITUTION:The plasma formation chamber 11 of a thin film forming device is constituted so that it has a diameter and length for forming a microwave cavity resonator in which the microwaves introduced into a vacuum tank 4 are resonated, and both a cylindrical target 13 impressed with negative electric charge and a couple or more magnets 8 for generating a magnetic field wherein a mirror magnetic field is formed so that magnetic flux density is made minimum in the formation chamber 11, are provided to the inner wall. Then after exhausting a sample chamber 9 to about 5X10 Torr degree of vacuum and introducing gaseous Ar to regulate the gas pressure in the formation chamber 11 to about 5X10 Torr, microwaves are introduced via a microwave waveguide 7, a microwave introduction window 6 and a vacuum waveguide 10 and plasma is generated in a mirror magnetic field gradient 8 via the target 13 supplied with prescribed electric power and a thin film is deposited and formed on a substrate 2 in the sample chamber 9.

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