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    • 3. 发明专利
    • MULTILAYER WIRING STRUCTURE FORMATION METHOD
    • JPH11238796A
    • 1999-08-31
    • JP4078198
    • 1998-02-23
    • NIPPON TELEGRAPH & TELEPHONE
    • INOUE TAKASHIHIRANO MAKOTO
    • H01L21/768
    • PROBLEM TO BE SOLVED: To surely connect a wiring layer on the third insulation layer of a multilayer wiring structure to the second wiring layer for forming, by selecting the dimensions of an exposure pattern corresponding to a window so that a focusing margin corresponding to the dimensions of the exposure pattern which corresponds to a window according to the value of the maximum value differ ence of an upper-layer insulation layer can be satisfied. SOLUTION: When windows 33A and 33B, corresponding to a third-layer insulation layer 31 that is a photosensitive insulation layer, are subjected to exposure in an exposure pattern with an exposure pattern corresponding to a window which corresponds to their patterns, the dimensions of the exposure pattern corresponding to the window corresponding to each of the patterns of the windows 33A and 33B is selected, so that a focusing margin for the dimension of the exposure pattern corresponding to the window with respect to the patterns of the window 33A and 33B according to the maximum stage difference of the third-layer insulation layer 31 can be satisfied, thus securing connecting wiring layers 32A and 32B on the third-layer insulation layer 31 which consists of a photosensitive insulation layer to second-layer wiring layers 22A and 22B for forming.