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1. 发明专利

DE60133595D1 未知
公开(公告)号：DE60133595D1
公开(公告)日：2008-05-21
申请号：DE60133595
申请日：2001-01-03
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： AOYAMA KAZUO , SAWADA HIROSHI , NAGOYA AKIRA , NAKAJIMA KAZUO , SHIBATA TADASHI
IPC分类号： G06F15/78 , G06N3/063 , G11C11/56 , H03K19/173
摘要： A function reconfigurable semiconductor device is provided. The function reconfigurable semiconductor device includes a plurality of function cells, each of the function cells being a basic unit which realizes a function; each of the function cells including a plurality of threshold elements; each of the threshold elements including means which stores a threshold value; and wherein a function which is realized by the function cell is determined by determining the threshold value in each of the threshold elements. In addition, the semiconductor device includes a nonvolatile memory which stores data for realizing the function in the function cells.

2. 发明专利

DE60138432D1 未知
公开(公告)号：DE60138432D1
公开(公告)日：2009-06-04
申请号：DE60138432
申请日：2001-01-03
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： AOYAMA KAZUO , SAWADA HIROSHI , NAGOYA AKIRA , NAKAJIMA KAZUO , SHIBATA TADASHI
IPC分类号： H03K19/00 , G06F15/78 , G06G7/48 , G06N3/063 , H03K19/177
摘要： A function reconfigurable semiconductor device is provided. The function reconfigurable semiconductor device includes a plurality of function cells, each of the function cells being a basic unit which realizes a function; each of the function cells including a plurality of threshold elements; each of the threshold elements including means which stores a threshold value; and wherein a function which is realized by the function cell is determined by determining the threshold value in each of the threshold elements. In addition, the semiconductor device includes a nonvolatile memory which stores data for realizing the function in the function cells.

3. 发明专利

DE60138145D1 未知
公开(公告)号：DE60138145D1
公开(公告)日：2009-05-07
申请号：DE60138145
申请日：2001-01-03
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： AOYAMA KAZUO , SAWADA HIROSHI , NAGOYA AKIRA , NAKAJIMA KAZUO , SHIBATA TADASHI
IPC分类号： G06F15/78 , G06N3/063 , H03K19/00
摘要： A function reconfigurable semiconductor device is provided. The function reconfigurable semiconductor device includes a plurality of function cells, each of the function cells being a basic unit which realizes a function; each of the function cells including a plurality of threshold elements; each of the threshold elements including means which stores a threshold value; and wherein a function which is realized by the function cell is determined by determining the threshold value in each of the threshold elements. In addition, the semiconductor device includes a nonvolatile memory which stores data for realizing the function in the function cells.

4. 发明专利

DE60133595T2 未知
公开(公告)号：DE60133595T2
公开(公告)日：2009-04-30
申请号：DE60133595
申请日：2001-01-03
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： AOYAMA KAZUO , SAWADA HIROSHI , NAGOYA AKIRA , NAKAJIMA KAZUO , SHIBATA TADASHI
IPC分类号： G06F15/78 , G06N3/063 , G11C11/56 , H03K19/173
摘要： A function reconfigurable semiconductor device is provided. The function reconfigurable semiconductor device includes a plurality of function cells, each of the function cells being a basic unit which realizes a function; each of the function cells including a plurality of threshold elements; each of the threshold elements including means which stores a threshold value; and wherein a function which is realized by the function cell is determined by determining the threshold value in each of the threshold elements. In addition, the semiconductor device includes a nonvolatile memory which stores data for realizing the function in the function cells.

5. 发明专利

JP2003143005A VARIABLE THRESHOLD ELEMENT CIRCUIT, FUNCTION FEATURE CONSTRUCTABLE INTEGRATED CIRCUIT AND CIRCUIT CONDITION HOLDING METHOD 审中-公开
公开(公告)号：JP2003143005A
公开(公告)日：2003-05-16
申请号：JP2001340315
申请日：2001-11-06
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： AOYAMA KAZUO
IPC分类号： H03K19/173
摘要： PROBLEM TO BE SOLVED: To restrain malfunctions due to variations in the floating gate threshold potential or the capacitance on a terminal, coupled capacitively with a floating gate or due to the noise or the fluctuation of input signals. SOLUTION: A switch 101 is connected between an output terminal of a νMOS inverter INV and a floating gate FG and a switch control circuit A109 controls the on/offs of the switch 101. A control signal Vct1 from a control terminal ct1 is given to a switch control circuit B111 via a delay control circuit 110, and the control circuit B111 controls the switching operation of switches 102, 103. For realizing a symmetric function, capacitance values C1 -Ck between variable input terminals 1(1)-1(k) and FG are all set equal to C. A capacitance value Cv1 , between a control variable terminal 107 and FG, is set to C and the capacitance value Cv2 between a control variable terminal 108 and FG is set to 0.5C.

6. 发明专利

JP2001044823A VARIABLE THRESHOLD GENERATION METHOD FOR NEURON MOS CIRCUIT AND THE NEURON MOS CIRCUIT USING THE METHOD 失效
公开(公告)号：JP2001044823A
公开(公告)日：2001-02-16
申请号：JP21080199
申请日：1999-07-26
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： AOYAMA KAZUO
IPC分类号： H03K19/20 , H03K19/0944
摘要： PROBLEM TO BE SOLVED: To set an input threshold within arbitrary number of input states by adjusting the value of an input terminal capacity between a terminal to be an input to a circuit and a floating gate, adjusting the internal threshold which is the potential of the floating gate where the logic is inverted and inverting the logic. SOLUTION: In a neuron MOS circuit, having input signal terminals (input) 1-n, two values being arbitrary 'true' and 'false' are used as the state of an input signal and the number of inputs in a 'true' state is called as a 'true' state input. The input terminal capacity between the terminal to be the input of the neuron MOS circuit and its floating gate(FG) 4. The value and the internal threshold which is the potential of FG4, where its logic is inverted, are adjusted to invert the logic. Thus, the threshold is held within the arbitrary number of states.

7. 发明专利

JP2000349619A NEURON MOS CIRCUIT OF LOW POWER CONSUMPTION 失效
公开(公告)号：JP2000349619A
公开(公告)日：2000-12-15
申请号：JP15400699
申请日：1999-06-01
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： AOYAMA KAZUO
IPC分类号： H03K19/0944
摘要： PROBLEM TO BE SOLVED: To suppress the through current that is generated in a static state of a neuron MOS and to attain low consumption of power by controlling the potential of a floating gate of a neuron MOS transistor by means of an input potential detection control circuit, a floating gate control circuit, etc. SOLUTION: An input potential detection control circuit 102 detects an input potential and controls the operating state of a neuron MOS transistor(Tr) An output potential detection control circuit 104 detects the output potential of the neuron MOS Tr and feeds back this detected potential to control the operating state of the neuron MOS Tr. In a MOS circuit including the neuron MOS Tr, the potential of a floating gate of the neuron MOS Tr is controlled via at least one of the circuits 102 and 104 and a floating gate control circuit 103 and the through current flowing to the ground from a power supply is suppressed.

8. 发明专利

JPH06252395A THRESHOLD VOLTAGE LEADING METHOD 失效
公开(公告)号：JPH06252395A
公开(公告)日：1994-09-09
申请号：JP3520993
申请日：1993-02-24
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： AOYAMA KAZUO
IPC分类号： G01R31/26 , H01L21/66 , H01L29/78 , H01L29/784
摘要： PURPOSE:To correctly lead a threshold voltage of a fine field effect transistor of which effective channel length and effective channel width are unknown with respect to a drain voltage change by setting a gate voltage, which makes minimal the difference characteristic of second order of a logarithmic value of a drain current for the gate voltage to a threshold voltage. CONSTITUTION:A voltage Vgs with reference to source is impressed to a gate terminal and a drain current ids is measured while Vgs is increased from 0. (1 to 3) A logarithmic value of the selected drain current is obtained to search difference of second order of the drain current in regard to the gate voltage. (4) A gate voltage which makes minimal the value of the difference of second order is obtained as a threshold voltage. (5) Thereby, the correct threshold value can be obtained even when the drain voltage changes. Therefore, the threshold voltage of a fine field effect transistor of which effective channel length and effective channel width are unknown can be led correctly with respect to change of the drain voltage.

9. 发明专利

JP2003258098A FUNCTION FACULTY RECONSTITUTABLE INTEGRATED CIRCUIT AND FUNCTION FACULTY RECONSTITUTING METHOD 审中-公开
公开(公告)号：JP2003258098A
公开(公告)日：2003-09-12
申请号：JP2002052439
申请日：2002-02-27
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： AOYAMA KAZUO
IPC分类号： H01L27/04 , H01L21/82 , H01L21/822 , H03K19/20
摘要： PROBLEM TO BE SOLVED: To provide a function faculty reconstitutable integrated circuit and a function faculty reconstituting method which can constitute the function faculty reconstitutable integrated circuit by an integrated circuit which can reconstitute a logical function faculty with a small number of element circuits. SOLUTION: The function faculty reconstitutable integrated circuit is characterized in that a threshold element circuit having a plurality of stages of threshold elements coupled has a structure which can select one of a plurality of thresholds and the selected one threshold is a signal in multi-valued representation. COPYRIGHT: (C)2003,JPO

10. 发明专利

JP2002344305A INTEGRATED CIRCUIT CAPABLE OF RECONFIGURING FUNCTION CAPABILITY USING MULTI-LEVEL VARIABLE AND INPUT VARIABLE MULTI-LEVELING METHOD 失效
公开(公告)号：JP2002344305A
公开(公告)日：2002-11-29
申请号：JP2001151687
申请日：2001-05-21
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： AOYAMA KAZUO
IPC分类号： H03K19/173 , H03K19/20
摘要： PROBLEM TO BE SOLVED: To provide an integrated circuit capable of reconfiguring the function capability, by which an integrated circuit capable of reconfiguring the function of a logic function can be constituted of a small number of threshold elements. SOLUTION: As to a threshold element circuit network used for a variable logic section of a reconfigurable device, multi-level data is used as configuration data constituting the function capability of the logic function, and simultaneously, the number of threshold elements in the threshold element circuit network is reduced by using multi-level data for input variables.

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