会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明专利
    • Optical connector of single cored optical fiber cable
    • 单根光纤光缆的光学连接器
    • JPS593402A
    • 1984-01-10
    • JP11161582
    • 1982-06-30
    • Hitachi Ltd
    • YOSHIOKA SENJISADAKANE KENICHIROU
    • G02B6/00G02B6/36H04B10/25H04B10/2581
    • G02B6/3604
    • PURPOSE:To obtain an optical connector wherein the core shafts of two single- cored optical fiber cables can rotate independently and freely by incorporating two short-sized optical fiber single cores and a bearing. CONSTITUTION:The end faces of the optical fiber cores 3, 4 of the single-cored optical fiber cables to be connected are brought into contact with the end faces of the short-sized optical fiber single cores 13, 14 contained in an adapter part 300 and are coupled thereto; further, the cores 13, 14 are optically connected with a gap 21. A bearing construction consisting of a cylindrical outer race 17, an inner race 18, a rolling body 19, and a stop ring 20 for the rolling body is adapted in the part 300, so that the plug parts 100, 200 of the respective optical connectors are rotated around the revolving axis of the bearing with less rotating friction.
    • 目的:为了获得光纤连接器,其中两根单芯光纤电缆的芯轴可以通过并入两根短尺寸光纤单芯和一个轴承而独立自由地旋转。 构成:要连接的单芯光纤电缆的光纤芯3,4的端面与容纳在适配器部件300中的短尺寸光纤单芯13,14的端面接触 并耦合到其上; 此外,芯13,14与间隙21光学连接。由圆筒形外圈17,内圈18,滚动体19和用于滚动体的止动环20组成的轴承结构适用于该部分 300,使得各个光学连接器的插头部分100,200以较少的旋转摩擦力绕着轴承的旋转轴线旋转。
    • 9. 发明专利
    • INDUCTION TYPE ELECTROMAGNETIC PUMP
    • JPH01311857A
    • 1989-12-15
    • JP13930888
    • 1988-06-08
    • HITACHI LTD
    • YOSHIOKA SENJISHIMOYASHIKI SHIGEHIROISHIDA TOMIO
    • H02K44/06H02K44/04
    • PURPOSE:To improve pump efficiency by using a flat pump duct to an electromagnetic pump, around which an inlet of conductive fluid is provided and in the center of the flat surface of which an outlet is provided, etc. CONSTITUTION:A pump duct 1 of an electromagnetic pump is shaped flat, provided respectively are an inlet piping 4 surrounding its flat surface into which conductive fluid flows and an outlet piping 5 in the center of its flat surface from which the conductive fluid flows. Stator yokes 2 are arranged around the outlet piping 5 facing the flat surface of the pump duct 1. Stator coils 3 are wound around the yokes 2 and excited by an excitation circuit with an AC current source 9, etc. Exciting current thereby flows to the stator coils 3 and alternating field is generated across stator yokes 2. With this alternating field the induction eddy current I flows to the conductive fluid and in compliance with Lenz's law electromagnetic force will work. With this electromagnetic force the fluid points to the outlet piping 5 in compliance with Fleming's left hand rule and is forcibly pushed out.
    • 10. 发明专利
    • RADIATION RESISTANT SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    • JPS6046065A
    • 1985-03-12
    • JP15320283
    • 1983-08-24
    • HITACHI LTD
    • YOSHIOKA SENJITOMIZAWA FUMIOIWATSUKA NOBUYOSHI
    • H01L21/8222H01L23/552H01L27/06
    • PURPOSE:To improve the radiation resistance performance by compensating a decrease in the current amplification due to radiation absorption to the prescribed degree by the regulation of the junction temperature of a semiconductor device. CONSTITUTION:A decrease in a current amplification foctor occurred by the fact that radiation dosage is absorbed to a semiconductor integrated circuit is detected by a detector, and expressed as vC/vB of the voltage drops of external resistors 23, 24, i.e., a signal voltage 30. If the voltage 30 decreases to a threshold voltage 31 or lower, a gate 29 is opened by an output signal of a comparator 28, and a supply current of a power source 36 is supplied to a Peltier element 10. The element 10 supplies thermal energy to a bipolar transistor for the integrated circuit, and the current amplification factor decreased due to the increase in the junction temperature Tj is increased and recovered. When it is recovered to the original value of the current amplification factor, thermal energy supply due to the element 10 is stopped, and the rise of the temperature Tj is stopped. The junction temperature Tj of the transistor can be controlled from this repeated regulation, thereby compensating the decrease in the current amplification factor due to the radiation absorption.