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1. 发明专利

JPH088429A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH088429A
公开(公告)日：1996-01-12
申请号：JP14056494
申请日：1994-06-22
申请人： NIPPON DENSO CO , TOYOTA CENTRAL RES & DEV
发明人： NAITO MASAMI , TOKURA NORIHITO , KANO HIROYUKI , FUMA HIROO , HAYASHI HIDEMITSU , MIWA KAZUTOSHI
IPC分类号： C01B31/36 , H01L29/04 , H01L29/12 , H01L29/78
摘要： PURPOSE:To lower on-resistance by making the carrier moving direction of a channel formed on the side surface of a trench nearly coincide with the axial direction for which the carrier effective masses is the second smallest out of the axial directions of three-dimensional orthogonal coordinates in the crystal structure of silicon carbide. CONSTITUTION:The carrier moving direction of a channel formed on the side surface of a trench 6 is set as the axial direction of 4H silicon carbide (the direction vertical to the surface where a semiconductor substrate 14 comes into contact with a p-type epitaxial layer 3 is the axial direction of 4H silicon carbide). A current passes the channel part of the trench 6 side surface and flows in the longitudinal direction. The electron moving direction of the channel is that of the axial direction with second smallest of the effective electron masses out of the axial directions of the three-dimensional orthogonal coordinates in the crystal structure of silicon carbide. Since the effective electron mass is small and the electron mobility is large in the electron moving direction, characteristics of low on-resistance can be obtained.

2. 发明专利

JP2001247397A SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2001247397A
公开(公告)日：2001-09-11
申请号：JP2000060441
申请日：2000-03-01
申请人： TOYOTA CENTRAL RES & DEV , DENSO CORP
发明人： SUGIYAMA NAOHIRO , OKAMOTO ATSUHITO , TANI TOSHIHIKO , SENOO YOSHIKI , NAITO MASAMI , KONDO HIROYUKI
IPC分类号： C30B29/36 , C30B33/02 , H01L21/324 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To obtain a silicon carbide single crystal excellent in device characteristics and having a slight electrical anisotropy due to stacking faults. SOLUTION: This silicon carbide single crystal 1 comprises an assembly 2 of screw dislocations, the stacking faults 3 and edge dislocations 4 and is obtained by dividing the assembly 2 of the screw dislocations into sections in the direction of the axis (extending the dislocation lines) of the screw dislocations with the stacking faults 3 or the edge dislocations 4.

3. 发明专利

JP2003277193A SiC WAFER WITH EPITAXIAL FILM, METHOD FOR PRODUCING THE SAME, AND SiC ELECTRONIC DEVICE 有权
标题翻译：具有外延膜的SiC波导，其制造方法和SiC电子器件
公开(公告)号：JP2003277193A
公开(公告)日：2003-10-02
申请号：JP2002080295
申请日：2002-03-22
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： NAKAMURA DAISUKE , ITO TADASHI , NAITO MASAMI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide an SiC wafer with an epitaxial film which hardly contains defects and dislocations in the wafer and the film, a method for producing the same, and an SiC electronic device having a low curren on resistance and nearly free from the generation of leak current in the backward direction.
SOLUTION: In a first growth process, a first growth crystal is produced by using a surface having an offset angle of ≤20° from {1-100} plane or a surface having an offset angle of ≤20° from {11-20} plane as the first growth surface, and in continuous growth process, the n-th growth crystal is produced by using a surface inclined from (n-1)-th growth plane at an angle of 45 to 90° and inclined from {0001} plane at an angle of 60 to 90° as the n-th growth surface. In the film-forming processes mentioned above, an SiC wafer 3 is produced by exposing a film-forming surface 35 from the N-th growth crystal obtained when n=N, and an epitaxial film 30 is formed on the film-forming surface 35.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提供一种在晶片和膜中几乎不含有缺陷和位错的外延膜的SiC晶片，其制造方法以及具有低耐电阻和近似电阻的SiC电子器件没有在向后方向产生泄漏电流。解决方案：在第一生长过程中，通过使用具有偏离角度≤20°的表面与ä1-100}平面或具有偏移角度≤20°的表面从ä11-20生产第一生长晶体 }平面作为第一生长表面，并且在连续生长过程中，通过使用从第（n-1）个生长面以45度至90度的角度倾斜并从ä0001倾斜的表面产生第n个生长晶体; 作为第n个生长表面以60至90°的角度平面。在上述成膜工艺中，通过从n = N时获得的第N生长晶体暴露成膜表面35，并且在成膜表面35上形成外延膜30来制造SiC晶片3 版权所有（C）2004，JPO

4. 发明专利

JPH0555595A SEMICONDUCTOR DEVICE FOR POWER 失效
公开(公告)号：JPH0555595A
公开(公告)日：1993-03-05
申请号：JP2667692
申请日：1992-02-13
申请人： NIPPON DENSO CO
发明人： NAITO MASAMI , TOKURA NORIHITO , HARA KUNIHIKO
IPC分类号： H01L29/267 , H01L29/78
摘要： PURPOSE:To provide a semiconductor device for power which secures a high thermal conductivity and strength and achieves a low ON resistance. CONSTITUTION:An n -type InP layer 2 with a higher electron mobility and a wide inhibited band is placed on a surface of an n -type silicon substrate 1 and an n-channel power MOSFET is formed on this n -type InP layer 2. Namely, a p region 5 is formed on a surface of the n -type InP layer 2, an n -region 6 is formed within this p region 5, and further a gate electrode 4 is formed on a surface of the n -type InP layer 2 through a gate insulation film 3, and a source electrode 8 is formed on the n region 6 and the p-region 5. Also, a drain electrode 9 is formed on a rear surface of the n -type silicon substrate 1.

5. 发明专利

JPS61119457A Automatic brake system for car 失效
标题翻译：汽车自动刹车系统
公开(公告)号：JPS61119457A
公开(公告)日：1986-06-06
申请号：JP24109484
申请日：1984-11-14
申请人： Nippon Denso Co Ltd
发明人： NAITO MASAMI , SHIMAMOTO MAMORU , SHINODA YOSHIO , KAMIYA MASAHIKO
IPC分类号： B60T7/12 , B60T11/10 , B60T17/18
CPC分类号： B60T11/103 , B60T7/12
摘要： PURPOSE:To improve safety by installing a means for strengthening the brake power according to the revolution of a wheel in parking, in the automatic operation apparatus which retains the brake power on parking and stop and releases the brake power on start. CONSTITUTION:When a car is driven, a microcomputer 7 in a control circuit judges if the car is in stop or not according to the output of a throttle sensor 23, and when the car is in stop, an actuator 26 is positively revolved for (t)sec through an actuator driving circuit 9. Then, a parking brake is operated by pulling a parking brake cable, and the car is set into parking state. When the car is started by the loosening of the cable in parking state, a signal is supplied from a car-speed sensor 22. Then, a power-source switch 3 is turned-ON through a car-speed input circuit 5, and an electric power is supplied into the microcomputer 7, etc., and the cable is pulled by the actuator 26, and the brake power is strengthened.
摘要翻译：目的：通过在停车时根据车轮的转速安装用于加强制动力的装置，在停车时保持制动功率的自动运行装置中，通过启动来释放制动力来提高安全性。构成：当汽车被驱动时，控制电路中的微型计算机7根据节气门传感器23的输出来判断汽车是否停止，并且当轿厢停止时，致动器26被正转（ t）sec。然后，通过拉动驻车制动器电缆来操作驻车制动器，并且将轿厢设置为停车状态。当通过在停车状态下的电缆松动来启动汽车时，从车速传感器22提供信号。然后，电源开关3通过车速输入电路5接通，并且电力被供给到微型计算机7等中，并且电缆被致动器26拉动，并且制动功率得到增强。

6. 发明专利

JPS62261007A ABSOLUTE ANGLE DETECTOR OF ROTATING MEMBER 失效
公开(公告)号：JPS62261007A
公开(公告)日：1987-11-13
申请号：JP10351986
申请日：1986-05-06
申请人： NIPPON DENSO CO
发明人： NAITO MASAMI , OZAKI TETSUJI , SHIMAMOTO MAMORU
IPC分类号： G01B7/30 , G01B7/00 , G01B21/22
摘要： PURPOSE:To obtain a detecting apparatus available for constantly accurate result with a simple construction, by winding in other tape with one of two rotating members which are rotated interlockedly and detecting, as an absolute angle, a rotated angle of the rotating member from its recorded content. CONSTITUTION:A spur gear 20 engaged with spur gears 30, 40 is assembled co-axially with a steering shaft 11 of a steering mechanism 10. These gears 30, 40 are supported free to rotate respectively with supporting shafts 31, 41 in horizontal symmetry with a straight line P which corresponds to the direction of translation of a vehicle passing through the center O of the shaft 11 as the reference. And, reels 50, 60 are supported on the shafts 31, 41 concentrically and rotate in a single body respectively with gears 30, 40 and a tape 70 is wrapped around a portion of each reel, each end of the tape being fixed on the reel. On the left and right parts respectively from the center in the longitudinal direction of this tape 70, rotated angles to the left and right directions from the reference rotated angle position corresponding to the translation condition of the shaft 11 and recorded. Further, a magnetic head 80 reads contents of record from a contact point with the tape 70 on the straight line P located at the center 81 of the reading unit and an absolute angle in the left or light direction is detected.

7. 发明专利

JPS61105261A Automatic braking system for car 失效
标题翻译：汽车自动制动系统
公开(公告)号：JPS61105261A
公开(公告)日：1986-05-23
申请号：JP22618184
申请日：1984-10-26
申请人： Nippon Denso Co Ltd
发明人： KAMIYA MASAHIKO , TAKAGI KOJI , NAITO MASAMI
IPC分类号： B60T7/12
摘要： PURPOSE: To make smooth a slow speed going back operation of a car with an automatic parking brake system where braking and taking off brake are carried out automatically, by furnishing a system to take off the brake without pressing down the accelerator pedal in a slow speed going back operation condition such as garaging.
CONSTITUTION: In the above captioned system, a car stop detecting device 1 to check a car stop, and a car start detecting device 2 to check the action of the car starting system are arranged. According to the stop checking signal, the braking device 5 is activated by the driving power device 4 through an output signal generating device 3, and according to the starting action checking signal, the action of the braking device 5 is released through the functions of devices 3 and 4. In this system, the start detecting device 2 has, at the same time, the going back shift position detecting device 2a to check the transmission shifted to the back to generate the back shift signal. When the back shift signal is output, the system functions to erase the output (braking) signal from the output signal generating device 3.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了使自动停车制动系统的自动停车制动平稳缓慢，自动执行制动和脱扣制动，通过提供一个系统来取下制动器，而不用低速地按下加速踏板返回操作条件如车库。构成：在上述标题系统中，设置有用于检查停车的停车检测装置1和检查轿厢起动系统的动作的轿厢起动检测装置2。根据停止检查信号，制动装置5由驱动力装置4通过输出信号生成装置3启动，根据启动动作检测信号，制动装置5的动作通过装置在该系统中，起动检测装置2同时具有回移位置检测装置2a，以检查向后移动的发送以产生反向移位信号。当返回信号输出时，该系统用于从输出信号发生装置3擦除输出（制动）信号。

8. 发明专利

JPH08306914A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH08306914A
公开(公告)日：1996-11-22
申请号：JP10415995
申请日：1995-04-27
申请人： NIPPON DENSO CO
发明人： YAMAMOTO TAKESHI , NAITO MASAMI , FUKAZAWA TAKESHI
IPC分类号： H01L21/336 , H01L29/08 , H01L29/423 , H01L29/78
摘要： PURPOSE: To accelerate the switching rate for increasing the breakdown field strength in a power MOSFET having bath tub type trench. CONSTITUTION: In a thickened structure of a gate oxide film at the trench bottom face, by the increased thickness of the gate oxide film 8, opposing to a gate electrode 9 and the first conductivity type semiconductor substrate 1, the oxide film capacity between a gate electrode and the first conductivity type semiconductor substrate will be reduced. Accordingly, the input capacity and the output capacity of the gate oxide film can be reduced thereby enabling the switching time to be cut down for reducing the switching loss, furthermore, by the increased film thickness of the gate oxide film on the trench bottom face, the breakdown field strength can be increased.

9. 发明专利

JPH0442971A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0442971A
公开(公告)日：1992-02-13
申请号：JP14746590
申请日：1990-06-07
申请人： NIPPON DENSO CO
发明人： NAITO MASAMI , FURUTA SHIGEKI
IPC分类号： H01L49/00 , H01H59/00 , H01L21/02 , H01L21/329 , H01L21/336 , H01L29/41 , H01L29/417 , H01L29/45 , H01L29/78
摘要： PURPOSE:To make it possible to reduce reliably an ON resistance by a method wherein a single crystal semiconductor thin film is formed on the surface of a metal substrate having a good conductivity so that the metal substrate and a silicon wafer are junctioned to each other in a state that they are alloyed to each other and a control element is formed at the semiconductor thin film part. CONSTITUTION:The surface of an n layer 221 of a silicon wafer 220 is mirror- polished. A metal substrate 21 and the wafer 220 are cleaned and thereafter, the mirror-polished and flat surface of the layer 221 is closely bonded to the substrate 21 and a heat treatment is performed. As an interdiffusion is caused in a junction interface 30 between the wafer 220 and the substrate 21, a silicon- molybdenum alloy layer is formed on this junction interface 30, the part only of the layer 221 having a very low resistivity is left and an unnecessary P layer 222 is shaved off. Lastly, the layer 222 only is etched to remove the P layer, the layer 221 only is left and the structure of a vertical power MOSFET is formed in the layer 221 using IC manufacturing techniques, such as an impurity diffusion, the formation of electrodes and the like.

10. 发明专利

JPH07326741A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07326741A
公开(公告)日：1995-12-12
申请号：JP11930294
申请日：1994-05-31
申请人： NIPPON DENSO CO
发明人： TAKAHASHI SHIGEKI , NAITO MASAMI , TAKEUCHI YUICHI
IPC分类号： H01L29/78
摘要： PURPOSE:To make it possible to contrive the stabilization of a gate oxide film on the corner parts of a groove. CONSTITUTION:A semiconductor substrate 20 is constituted of an n substrate 21 and an n epitaxial layer 22 and a rectangle-shaped and U-shaped groove 23 is formed in the surface of this substrate 20 in a plane pattern. A p-type base layer 24 and an n source layer 25, which are formed by superposing, are exposed in the side surface 232 of this groove 23, a gate electrode film 27 is provided on the inner periphery of the groove 23 via a gate oxide film 26 and a channel is formed. Here, the film 27 is formed in such a way as to avoid specially the square parts of the groove and a semiconductor device is constituted so that the reliability of the performance characteristics of the device are effectively ensured along with the stabilization of the life of the film 27 on these square parts.

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