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1. 发明申请

WO2007103249A3 METHODS OF FORMING THERMOELECTRIC DEVICES USING ISLANDS OF THERMOELECTRIC MATERIAL AND RELATED STRUCTURES 审中-公开
公开(公告)号：WO2007103249A3
公开(公告)日：2007-09-13
申请号：PCT/US2007/005490
申请日：2007-03-02
申请人： NEXTREME THERMAL SOLUTIONS , BHARATHAN, Jayesh , KOESTER, David A. , ALLEY, Randall G. , VENKATASUBRAMANIAN, Rama , ADDEPALLI, Pratima , SHEN, Bing , WATKINS, Cynthia
发明人： BHARATHAN, Jayesh , KOESTER, David A. , ALLEY, Randall G. , VENKATASUBRAMANIAN, Rama , ADDEPALLI, Pratima , SHEN, Bing , WATKINS, Cynthia
IPC分类号： H01L35/00 , H01L35/32 , H01L35/34
摘要： A method of forming a thermoelectric device may include forming a plurality of islands of thermoelectric material on a deposition substrate. The plurality of islands of thermoelectric material may be bonded to a header substrate so that the plurality of islands are between the deposition substrate and the header substrate. More particularly, the islands of thermoelectric material may be epitaxial islands of thermoelectric material having crystal structures aligned with a crystal structure of the deposition substrate. Related structures are also discussed.

2. 发明申请

WO2006036565A2 HIGH EFFICIENCY GROUP III NITRIDE LED WITH LENTICULAR SURFACE 审中-公开
标题翻译：高效率III族氮化物LED，带有明显的表面
公开(公告)号：WO2006036565A2
公开(公告)日：2006-04-06
申请号：PCT/US2005/032894
申请日：2005-09-15
申请人： CREE, INC. , EDMOND, John, Adam , SLATER, David, Beardsley, Jr. , BHARATHAN, Jayesh , DONOFRIO, Matthew
发明人： EDMOND, John, Adam , SLATER, David, Beardsley, Jr. , BHARATHAN, Jayesh , DONOFRIO, Matthew
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region.
摘要翻译：公开了一种高效率III族氮化物发光二极管。二极管包括从由半导体和导电材料组成的组中选择的衬底，在衬底上或上方的III族氮化物基发光区，以及在发光区上或上方包含碳化硅的透镜状表面。

3. 发明申请

WO2006036566A1 HIGH EFFICIENCY GROUP III NITRIDE-SILICON CARBIDE LIGHT EMITTING DIODE 审中-公开
标题翻译：高效III族氮化硅碳化硅发光二极管
公开(公告)号：WO2006036566A1
公开(公告)日：2006-04-06
申请号：PCT/US2005/032896
申请日：2005-09-15
申请人： CREE, INC. , EDMOND, John, Adam , BHARATHAN, Jayesh , SLATER, David, Beardsley, Jr.
发明人： EDMOND, John, Adam , BHARATHAN, Jayesh , SLATER, David, Beardsley, Jr.
IPC分类号： H01L33/00
CPC分类号： H01L33/36 , H01L33/007
摘要： A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining the added active portion to a conductive sub-mounting structure, and removing a portion of the silicon carbide substrate opposite the added active portion to thereby reduce the overall thickness of the joined substrate, active portion and sub-mounting structure. The resulting the sub-mounting structure can be joined to a lead frame with the active portion positioned between the silicon carbide substrate and the sub-mounting structure to thereby use the sub-mounting structure to separate the active portion from the lead frame and avoid undesired electrical contact between the active portion and the lead frame.
摘要翻译：公开了用于制造适用于包装的高效率高抽提发光二极管的方法和结果。该方法包括以下步骤：将宽带隙半导体材料的发光有源部分添加到导电碳化硅基板，将添加的有源部分接合到导电子安装结构，以及将与添加的相邻的碳化硅基板相对的一部分从而减小接合基板，有源部分和副安装结构的整体厚度。所产生的子安装结构可以被连接到引线框架，其中有源部分位于碳化硅基板和子安装结构之间，从而使用子安装结构将活动部分与引线框架分开，并避免不期望的有源部分和引线框架之间的电接触。

4. 发明申请

WO2006014996A3 ULTRA-THIN OHMIC CONTACTS FOR P-TYPE NITRIDE LIGHT EMITTING DEVICES AND METHODS OF FORMING 审中-公开
公开(公告)号：WO2006014996A3
公开(公告)日：2006-02-09
申请号：PCT/US2005/026558
申请日：2005-07-27
申请人： CREE, INC. , RAFFETTO, Mark , BHARATHAN, Jayesh , HABERERN, Kevin , BERGMANN, Michael , EMERSON, David , IBBETSON, James , LI, Ting
发明人： RAFFETTO, Mark , BHARATHAN, Jayesh , HABERERN, Kevin , BERGMANN, Michael , EMERSON, David , IBBETSON, James , LI, Ting
IPC分类号： H01L33/00
摘要： A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 A and a specific contact resistivity less than about 10 -3 ohm-cm 2 .

5. 发明申请

WO2004010509A2 LIGHT EMITTING DIODES INCLUDING BARRIER LAYERS/SUBLAYERS AND MANUFACTURING METHODS THEREFOR 审中-公开
标题翻译：发光二极管，包括障碍层/子层及其制造方法
公开(公告)号：WO2004010509A2
公开(公告)日：2004-01-29
申请号：PCT/US2003/021909
申请日：2003-07-15
申请人： CREE, INC. , SLATER, JR., David, B. , WILLIAMS, Bradley, E. , ANDREWS, Peter, S. , EDMOND, John, A. , ALLEN, Scott, T. , BHARATHAN, Jayesh
发明人： SLATER, JR., David, B. , WILLIAMS, Bradley, E. , ANDREWS, Peter, S. , EDMOND, John, A. , ALLEN, Scott, T. , BHARATHAN, Jayesh
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/38
摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
摘要翻译：诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。阻挡层设置在反射器层上并在反射器层的侧壁上延伸。多层导电叠层还可以包括在反射器和外延区之间的欧姆层。阻挡层进一步在欧姆层的侧壁上延伸。阻挡层还可以延伸到多层导电叠层外的外延区域上。阻挡层可以制成一系列交替的第一和第二子层。

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