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1. 发明申请

WO2004107410A2 SELF-ALIGNED BIPOLAR TRANSISTOR HAVING RECESSED SPACERS AND METHOD FOR FABRICATING SAME 审中-公开
标题翻译：具有保持间隔物的自对准双极晶体管及其制造方法
公开(公告)号：WO2004107410A2
公开(公告)日：2004-12-09
申请号：PCT/US2004/008387
申请日：2004-03-19
申请人： NEWPORT FAB, LLC d.b.a. JAZZ SEMICONDUCTOR
发明人： KALBURGE, Amol , YIN, Kevin, Q.
IPC分类号： H01L
CPC分类号： H01L29/66272 , H01L29/0804 , H01L29/66242 , H01L29/66287
摘要： According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a first link spacer and a second link spacer situated on the top surface of the base. The bipolar transistor further comprises a sacrificial post situated between the first and second link spacers, where the first and second link spacers have a height that is substantially less than a height of the sacrificial post. The bipolar transistor also comprises a conformal layer situated over the sacrificial post and the first and second link spacers. According to this exemplary embodiment, the bipolar transistor further comprises a sacrificial planarizing layer situated over the conformal layer, the first and second link spacers, the sacrificial post, and the base. The sacrificial planarizing layer may comprise, for example, an organic material such as an organic BARC ("bottom anti-reflective coating").
摘要翻译：根据一个示例性实施例，双极晶体管包括具有顶表面的基座。双极晶体管还包括第一连接间隔物和位于基底的顶表面上的第二连接间隔物。所述双极晶体管还包括位于所述第一和第二连接间隔件之间的牺牲柱，其中所述第一和第二连接间隔件的高度实质上小于所述牺牲柱的高度。双极晶体管还包括位于牺牲柱和第一和第二连接间隔物之上的共形层。根据该示例性实施例，双极晶体管还包括位于保形层之上的牺牲平坦化层，第一和第二连接间隔物，牺牲柱和基底。牺牲平坦化层可以包括例如有机材料，例如有机BARC（“底部抗反射涂层”）。

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