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    • 6. 发明专利
    • HOLDING TOOL FOR SCREWDRIVER SCREW
    • JPH11333746A
    • 1999-12-07
    • JP18132198
    • 1998-05-25
    • MORIMOTO TAKAO
    • MORIMOTO TAKAO
    • B25B23/10
    • PROBLEM TO BE SOLVED: To fit screwdriver in a screw head groove and to fix the screw by taking one side of a main part formed of an elastic material and having both openings as a screwdriver inserting hole and taking the other side as a screw inserting hole. SOLUTION: A screwdriver inserting hole 12 for holding a shaft 3 of a screwdriver is provided on one side of an elastic main part 1 having both opening ends, and the other side is taken as a screw inserting hole 8 through which a screw 4 is inserted to fix a head of the screw 15. The screwdriver is inserted from the screwdriver inserting hole 12 into a holding tool of a driver screw, the screw 4 is inserted from the screw inserting hole 12 until the head is fixed, and the tip of the screwdriver and the groove of the head of the screw 15 are so fixed as to be engaged with each other in the main part 15. Therefore, the screw 4 can be easily fixed to the screwdriver without manually holding the screw 4.
    • 7. 发明专利
    • STRING TYING DEVICE
    • JP2001130625A
    • 2001-05-15
    • JP34924599
    • 1999-11-02
    • MORIMOTO TAKAO
    • MORIMOTO TAKAO
    • B65D67/00
    • PROBLEM TO BE SOLVED: To solve problems with the prior art that a weak woman or an inexperienced person cannot tie a string as the string loosens or a knot gets untied in binding a parcel with the string, and also when moving, it takes time to tie a string so that other staff must wait for a long time. SOLUTION: A polygonal or circular body frame 1 including an opening 4 at the center is equipped with a plurality of pairs of hooks 2 comprising a pair of hooks 2b facing the opening 4 of the frame 1, wherein the vicinity of contacts between the hooks 2 and the frame 1 is made to be almost flat. The hooks 2 can be formed to be raised toward the center of the frame 1 or the hooks 2 can be formed to be thinner than the frame 1. Thus the tying device is used to hang a string on a hook, and the string can be easily tied only by hooking the string on the hook and twisting for fastening.
    • 8. 发明专利
    • DE69500371T2
    • 1998-01-29
    • DE69500371
    • 1995-02-02
    • NEC CORP
    • SASAKI YOSHIHIROMORIMOTO TAKAO
    • H01S5/00H01S5/323H01S5/34H01S5/343H01S3/19
    • Disclosed herein is a long wavelength multiple quantum well semiconductor laser which is capable of preventing the nonuniform injection of carriers into quantum wells, and the overflow of the electrons within the quantum wells, and which is also capable of suppressing the increase in the threshold caused by insufficient gain, and the increase in the threshold and the deterioration in the slope efficiency caused by internal absorption loss. In a multiple quantum well semiconductor laser which has an InGaAsP optical waveguide layer provided respectively on the inside of a p-InP clad layer and an n-InP clad layer, and InGaAsP barrier layers and strained InGaAsP quantum well layers provided between the InP clad layers, the semiconductor laser according to this invention has the energy difference between the first quantum level of the hole in the quantum well and the top of the valence band in the barrier layer to be less than or equal to 160 meV, the energy difference between the first quantum level of the electron in the quantum well and the bottom of the conduction band in the barrier layer to be more than or equal to 30 meV, and the optical confinement factor to the quantum layer lying in the range from 0.01 to 0.07.
    • 9. 发明专利
    • DE69500371D1
    • 1997-07-31
    • DE69500371
    • 1995-02-02
    • NEC CORP
    • SASAKI YOSHIHIROMORIMOTO TAKAO
    • H01S5/00H01S5/323H01S5/34H01S5/343H01S3/19
    • Disclosed herein is a long wavelength multiple quantum well semiconductor laser which is capable of preventing the nonuniform injection of carriers into quantum wells, and the overflow of the electrons within the quantum wells, and which is also capable of suppressing the increase in the threshold caused by insufficient gain, and the increase in the threshold and the deterioration in the slope efficiency caused by internal absorption loss. In a multiple quantum well semiconductor laser which has an InGaAsP optical waveguide layer provided respectively on the inside of a p-InP clad layer and an n-InP clad layer, and InGaAsP barrier layers and strained InGaAsP quantum well layers provided between the InP clad layers, the semiconductor laser according to this invention has the energy difference between the first quantum level of the hole in the quantum well and the top of the valence band in the barrier layer to be less than or equal to 160 meV, the energy difference between the first quantum level of the electron in the quantum well and the bottom of the conduction band in the barrier layer to be more than or equal to 30 meV, and the optical confinement factor to the quantum layer lying in the range from 0.01 to 0.07.