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1. 发明申请

WO2014031119A1 HIGHLY TRANSPARENT ALUMINUM NITRIDE SINGLE CRYSTALLINE LAYERS AND DEVICES MADE THEREFROM 审中-公开
标题翻译：高透明度的氮化铝单晶层及其制造的器件
公开(公告)号：WO2014031119A1
公开(公告)日：2014-02-27
申请号：PCT/US2012/052022
申请日：2012-08-23
申请人： NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY , TOKUYAMA CORPORATION , HEXATECH, INC. , KOUKITU, Akinori , KUMAGAI, Yoshinao , NAGASHIMA, Toru , KINOSHITA, Toru , KUBOTA, Yuki , DALMAU, Rafael F. , XIE, Jinqiao , MOODY, Baxter F. , SCHLESSER, Raoul , SITAR, Zlatko
发明人： KOUKITU, Akinori , KUMAGAI, Yoshinao , NAGASHIMA, Toru , KINOSHITA, Toru , KUBOTA, Yuki , DALMAU, Rafael F. , XIE, Jinqiao , MOODY, Baxter F. , SCHLESSER, Raoul , SITAR, Zlatko
IPC分类号： C30B25/10 , C30B25/14 , C30B29/40 , H01L33/32
CPC分类号： C30B25/20 , C01B21/072 , C01P2006/60 , C30B25/14 , C30B25/165 , C30B29/403 , H01L33/0075 , H01L33/02 , H01L33/18 , H01L33/32 , Y10T428/26
摘要： The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30 % of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200°C.
摘要翻译：本发明提供了高透明度的单晶AlN层作为用于发光二极管的器件衬底，以便改善发光器件的输出和操作劣化。高透明度的单晶AlN层在波长265nm下的a轴方向的折射率在2.250〜2.400的范围内，吸收系数小于或等于15cm -1。本发明还提供一种生长高透明度单晶AlN层的方法，该方法包括以下步骤：将在反应器流道中形成的壁沉积物中所含的Al的量保持在低于或等于30％供给到反应器中的铝的总量，以及将流动通道中的壁温度维持在小于或等于1200℃。

2. 发明公开

EP2123802A1 N-TYPE CONDUCTIVE ALUMINUM NITRIDE SEMICONDUCTOR CRYSTAL AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译： LEITFÄHIGERALUMINIUMNITRIDHALBLEITERKRISTALL VOM N-TYP UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2123802A1
公开(公告)日：2009-11-25
申请号：EP08711084.7
申请日：2008-02-05
申请人： National University Corporation Tokyo University of Agriculture and Technology , Tokuyama Corporation
发明人： KOUKITU, Akinori , KUMAGAI, Yoshinao , NAGASHIMA, Toru , TAKADA, Kazuya , YANAGI, Hiroyuki
IPC分类号： C30B29/38 , C23C16/01 , C23C16/34 , C30B25/18 , H01L21/205 , H01L33/00
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/02403 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/007
摘要： This invention provides a selfsupporting substrate which consists of a n-type conductive aluminum nitride semiconductor crystal and is useful for manufacturing the vertical conductive type AlN semiconductor device.
The n-type conductive aluminum nitride semiconductor crystal, by which the selfsupporting substrate is made up, contains Si atom at a concentration of 1×10 18 to 5×10 20 cm -3 , is substantially free from halogen atoms, and substantially does not absorb the light having the energy of not more than 5.9 eV. The selfsupporting substrate can be obtained by a method comprising the steps of forming an AlN crystal layer on a single crystal substrate such as a sapphire by the HVPE method, preheating the obtained substrate having the AlN crystal layer to a temperature of 1,200°C or more, forming a second layer consisting of the n-type conductive aluminum nitride semiconductor crystal is formed on the AlN crystal layer in high rate by the HVPE method and separating the second layer from the obtained laminate.
摘要翻译：本发明提供一种由n型导电氮化铝半导体晶体组成的自支撑衬底，并且可用于制造垂直导电型AlN半导体器件。构成自支撑衬底的n型导电氮化铝半导体晶体含有浓度为1×10 18至5×10 20 cm -3的Si原子，基本上不含卤素原子，并且基本上不吸收能量不超过5.9 eV的光。可以通过包括以下步骤的方法获得自支撑衬底：通过HVPE法在诸如蓝宝石的单晶衬底上形成AlN晶体层的步骤，将获得的具有AlN晶体层的衬底预热至1200℃或更高的温度通过HVPE法在AlN晶体层上高速率地形成由n型导电氮化铝半导体晶体构成的第二层，并将第二层从得到的层压体分离。

3. 发明公开

EP2796596A1 ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME 有权转让
标题翻译：不锈钢铝合金
公开(公告)号：EP2796596A1
公开(公告)日：2014-10-29
申请号：EP11878135.0
申请日：2011-12-22
申请人： National University Corporation Tokyo University of Agriculture and Technology , Tokuyama Corporation
发明人： KOUKITU, Akinori , KUMAGAI, Yoshinao , NAGASHIMA, Toru , HIRAREN, Yuki
IPC分类号： C30B29/38 , C30B25/02
CPC分类号： H01L33/343 , C30B23/00 , C30B25/02 , C30B25/08 , C30B29/403 , H01L21/0254 , H01L33/0054
摘要： The present invention relates to an aluminum nitride single crystal characterized in that the concentration of carbon is 1x10 14 atoms/cm 3 , the concentration of chlorine is 1x10 14 to 1x10 17 atoms/cm 3 , and the absorption coefficient at a wavelength of 265 nm is 40 cm -1 or less.
摘要翻译：本发明涉及一种氮化铝单晶，其特征在于碳的浓度为1×10 14原子/ cm 3，氯的浓度为1×10 14至1×10 17原子/ cm 3，波长为265nm的吸收系数为40cm -1以下。

4. 发明公开

EP2243868A1 LAMINATE AND PROCESS FOR PRODUCING THE LAMINATE 审中-公开
标题翻译： LAMINAT UND VERFAHREN ZUR HERSTELLUNG DES LAMINATS
公开(公告)号：EP2243868A1
公开(公告)日：2010-10-27
申请号：EP09702588.6
申请日：2009-01-09
申请人： National University Corporation Tokyo University of Agriculture and Technology , Tokuyama Corporation
发明人： KOUKITU, Akinori , KUMAGAI, Yoshinao , ISHIZUKI, Masanari , NAGASHIMA, Toru , HAKOMORI, Akira , TAKADA, Kazuya
IPC分类号： C30B29/38 , C30B25/18
CPC分类号： C30B25/18 , C30B25/183 , C30B29/403
摘要： The present invention provides a self-supporting substrate obtained by the steps of: forming an Al-based group-III nitride thin-layer having a thickness in the range of 3-200 nm on a base substrate made of a single crystal of an inorganic substance which substantially does not decompose at 800 °C in an inert gas atmosphere and which does produce volatiles by decomposition when contacting with a reducing gas in a temperature range of 800-1600 °C, for example sapphire; forming voids along the interface between the base substrate and the Al-based group-III nitride thin-layer of the obtained laminated substrate by thermally treating the laminated substrate in a temperature range of 800-1600 °C in a reducing gas atmosphere containing ammonia gas; forming a group-III nitride single crystal thick-layer on the Al-based group-III nitride thin-layer; and separating these formed layers. The self-supporting substrate is a self-supporting substrate of the group-III nitride single crystal such as AlN, which is suitably used for forming a semiconductor device such as ultraviolet light emitting device and of which crystal plane shows a large radius of curvature.
摘要翻译：本发明提供一种自支撑基板，其通过以下步骤获得：在由无机的单晶制成的基底上形成厚度在3〜200nm范围内的Al系III族氮化物薄层在800℃，在惰性气体气氛中基本上不分解的物质，当与800-1600℃的温度范围内的还原气体接触时会分解产生挥发物，例如蓝宝石; 通过在800-1600℃的温度范围内，在含有氨气体的还原性气体气氛中对叠层基板进行热处理，沿着基底基板和Al基III族氮化物薄层之间的界面形成空隙 ; 在Al系III族氮化物薄层上形成III族氮化物单晶厚层; 并分离这些形成的层。自支撑衬底是诸如AlN的III族氮化物单晶的自支撑衬底，其适合用于形成诸如紫外光发射器件的半导体器件，并且其晶面显示出大的曲率半径。

5. 发明公开

EP2243866A1 PROCESS FOR PRODUCING LAMINATE COMPRISING AL-BASED GROUP III NITRIDE SINGLE CRYSTAL LAYER, LAMINATE PRODUCED BY THE PROCESS, PROCESS FOR PRODUCING AL-BASED GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE USING THE LAMINATE, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE 审中-公开
标题翻译：用于生产层压板的单晶从A到AL-BASED III族氮化物，直所制造的层压板，用于生产从A到AL-BASED III族氮化物的单晶衬底USING和层压ALUMINIUMNITRIDEINKRISTALLSUBSTRAT
公开(公告)号：EP2243866A1
公开(公告)日：2010-10-27
申请号：EP08870572.8
申请日：2008-12-16
申请人： National University Corporation Tokyo University of Agriculture and Technology , Tokuyama Corporation
发明人： NAGASHIMA, Toru , HAKOMORI, Akira , TAKADA, Kazuya , ISHIZUKI, Masanari , KOUKITU, Akinori , KUMAGAI, Yoshinao
IPC分类号： C30B29/38 , C30B25/18
CPC分类号： C30B29/403 , C30B25/183 , H01L33/0075 , H01L2924/0002 , H01L2924/00
摘要： The present invention is a method for producing a laminated body, comprising the steps of: (1) preparing a base substrate having a surface formed of a single crystal which is different from the material constituting the Al-based group-III nitride single crystal layer to be formed; (2) forming an Al-based group-III nitride single crystal layer having a thickness of 10 nm to 1.5 µm on the single crystal surface of the prepared base substrate; (3) forming on the Al-based group-III nitride single crystal layer a non-single crystal layer being 100 times or more thicker than the Al-based group-III nitride single crystal layer without breaking the previously-obtained Al-based group-III nitride single crystal layer; and (4) removing the base substrate. The method provides a substrate which can be suitably used as a base substrate for producing an Al-based group-III nitride single crystal self-supporting substrate, of which surface is formed of a single crystal of an Al-based group-III nitride, and which is free from cracking and warpage.
摘要翻译：本发明是生产的层叠体，其包括以下步骤的方法：（1）制备具有形成在单晶的表面上的基底基板的所有这是从构成Al系III族氮化物单晶层的材料不同要形成; （2），其具有的厚度为所制备的基底基板的单晶表面上10纳米至1.5微米的Al系III族氮化物单晶层的形成; （3）在形成Al系III族氮化物单晶层上形成非单晶层是不破坏先前获得的Al系基团比的Al系III族氮化物单晶层的100倍或更厚 -III族氮化物单晶层; 和（4）除去所述基底基板。该方法提供了可以适合用作基底基板在Al系III族氮化物单晶自支撑衬底的制造中，该表面形成的Al系III族氮化物的单晶构成的基底，而所有这一切是从开裂和翘曲免费。

6. 发明公开

EP2141267A1 PROCESS FOR PRODUCING GROUP III NITRIDE CRYSTAL 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES GRUPPE-III-NITRID-KRISTALLS
公开(公告)号：EP2141267A1
公开(公告)日：2010-01-06
申请号：EP08721312.0
申请日：2008-02-27
申请人： National University Corporation Tokyo University of Agriculture and Technology , Tokuyama Corporation
发明人： KOUKITU, Akinori , KUMAGAI, Yoshinao , NAGASHIMA, Toru , TAKADA, Kazuya , YANAGI, Hiroyuki
IPC分类号： C30B29/38 , C30B25/10
CPC分类号： C30B29/403 , C30B25/10 , C30B25/18
摘要： There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw materials can be used to reduce production costs and high-speed film formation is possible without employing MOVPE.
To produce a group III nitride crystal by HVPE comprising the step of growing a group III nitride crystal layer by vapor-phase growth on a single crystal substrate by contacting the heated single crystal substrate with a raw material gas containing a group III halide and a compound having a nitrogen atom, the group III nitride crystal is grown by vapor-phase growth on the single crystal substrate heated at a temperature of 1,000°C or more and less than 1,200°C to form an intermediate layer and then, a group III nitride crystal is further grown by vapor-phase growth on the intermediate layer on the substrate heated at a temperature of 1,200°C or higher.
摘要翻译：提供了一种能够通过仅使用廉价的原材料用于降低生产成本的HVPE来获得具有光滑表面和高结晶度的铝基III族氮化物晶体层的方法，并且可以在不使用高速成膜的情况下进行高速成膜 MOVPE。为了通过HVPE制造III族氮化物晶体，包括通过使加热的单晶衬底与含有III族卤化物和化合物的原料气体接触，在单晶衬底上通过气相生长生长III族氮化物晶体层的步骤具有氮原子的情况下，在1000℃以上且小于1200℃的温度加热的单晶衬底上通过气相生长生长III族氮化物晶体，形成中间层，然后加入III族氮化物通过在1200℃以上的温度下加热的基板上的中间层上的气相生长进一步生长晶体。

7. 发明公开

EP3059336A1 NITRIDE SEMICONDUCTOR CRYSTAL, MANUFACTURING METHOD, AND MANUFACTURING APPARATUS 审中-公开
标题翻译： NITRIDHALBLEITERKRISTALL，HERSTELLUNGSVERFAHREN UND HERSTELLUNGSVORRICHTUNG
公开(公告)号：EP3059336A1
公开(公告)日：2016-08-24
申请号：EP14843243.8
申请日：2014-09-10
申请人： National University Corporation Tokyo University Of Agriculture and Technology
发明人： KOUKITU, Akinori , KUMAGAI, Yoshinao , MURAKAMI, Hisashi
IPC分类号： C30B29/38
CPC分类号： C30B25/14 , C30B25/00 , C30B25/02 , C30B25/08 , C30B25/10 , C30B25/165 , C30B25/18 , C30B25/20 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262
摘要： A nitride semiconductor crystal has a diameter of four inches or more and is warped to have a curvature radius of 100 m or more, and has an impurity concentration of 1 × 10 17 /cm 3 or lower. A manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding a gallium trihalide gas having a partial pressure of 9.0 × 10 -3 atm or higher onto the substrate, and growing a GaN crystal in the -C-axis direction on the substrate, where a growth temperature for the GaN crystal is 1200°C or higher, or a manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding an aluminum trihalide gas having a partial pressure of 9.0 × 10 -3 atm or higher onto the substrate, and growing an AlN crystal in the -C-axis direction on the substrate, where a growth temperature for the AlN crystal is 1400°C or higher.
摘要翻译：氮化物半导体晶体的直径为4英寸以上，翘曲为曲率半径为100μm以上，杂质浓度为1×10 17 / cm 3以下。一种氮化物半导体晶体的制造方法，其特征在于，在基板上设置基板，将分压为9.0×10 -3 atm以上的三卤化镓气体供给到基板上，在基板上沿-C轴方向生长GaN晶体其中GaN晶体的生长温度为1200℃以上，或者氮化物半导体晶体的制造方法包括提供基板，将分压为9.0×10 -3 atm以上的三卤化铝气体供给到衬底，并且在衬底上在-C轴方向上生长AlN晶体，其中AlN晶体的生长温度为1400℃或更高。

8. 发明公开

EP3054037A1 METHOD FOR GROWING -Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTALLINE LAYERED STRUCTURE 审中-公开
标题翻译：育种方法BETA-Ga2O3系基于单晶薄膜和晶体层结构
公开(公告)号：EP3054037A1
公开(公告)日：2016-08-10
申请号：EP14849461.0
申请日：2014-09-18
申请人： Tamura Corporation , National University Corporation Tokyo University Of Agriculture and Technology
发明人： GOTO, Ken , SASAKI, Kohei , KOUKITU, Akinori , KUMAGAI, Yoshinao , MURAKAMI, Hisashi
IPC分类号： C30B29/16 , C23C16/40 , C23C16/448 , C30B25/14 , H01L21/365
CPC分类号： C30B25/165 , C23C16/40 , C23C16/4488 , C30B25/02 , C30B29/16 , H01L21/02414 , H01L21/02433 , H01L21/02565 , H01L21/02576 , H01L21/0259 , H01L21/02598 , H01L21/0262 , H01L21/02634 , H01L29/04 , H01L29/24
摘要： Provided are: a method for efficiently growing a high-quality, large diameter β-Ga 2 O 3 -based single crystal film; and a crystalline layered structure having a β-Ga 2 O 3 -based single crystal film grown using this growing method. As one embodiment, the present invention provides a method for growing a β-Ga 2 O 3 -based single crystal film by using the HVPE method, and including a step for exposing a Ga 2 O 3 -based substrate (10) to a gallium chloride gas and an oxygen-containing gas, and growing a β-Ga 2 O 3 -based single crystal film (12) on the principal surface (11) of the Ga 2 O 3 -based substrate (10) at a growing temperature of 900° C or higher.
摘要翻译：本发明提供：用于有效地生长高质量的方法，大直径²-的Ga 2 O 3系单晶膜; 和具有使用该生长方法生长的²-的Ga 2 O 3系单晶膜的结晶层状结构。作为一个实施例，本发明提供了一种方法，用于通过利用HVPE法生长²-的Ga 2 O 3系单晶的电影，并且包括用于曝光的Ga 2 O 3系基材（10），以镓的工序氯化物气体和基底物在生长温度气体，和Ga的2 O 3（10）的主表面（11）上生长²-的Ga 2 O 3系单晶膜（12）的含氧 900℃或更高。

9. 发明公开

EP3396030A1 SEMICONDUCTOR SUBSTRATE, AND EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME 审中-公开
公开(公告)号：EP3396030A1
公开(公告)日：2018-10-31
申请号：EP16875325.9
申请日：2016-11-16
申请人： Tamura Corporation , National University Corporation Tokyo University Of Agriculture and Technology
发明人： GOTO, Ken , KUMAGAI, Yoshinao , MURAKAMI, Hisashi
IPC分类号： C30B29/16
CPC分类号： C30B29/16
摘要： [Problem] To provide: a semiconductor substrate comprising a β-Ga 2 O 3 -based single crystal, with which an epitaxial layer comprising the β-Ga 2 O 3 -based single crystal can be grown by the HVPE method at a high growth rate, or with which an epitaxial layer comprising the β-Ga 2 O 3 -based single crystal having good surface morphology can be grown; an epitaxial wafer having the semiconductor substrate and an epitaxial layer; and a method for producing the epitaxial wafer. [Solution] One embodiment is a semiconductor substrate 11 which is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method, wherein the semiconductor substrate 11 comprises a β-Ga2O3-based single crystal, and a plane parallel to the [100] axis of the β-Ga2O3-based single crystal is a principal plane 12.

10. 发明公开

EP3933935A1 HIGH WITHSTAND VOLTAGE SCHOTTKY BARRIER DIODE 审中-公开
公开(公告)号：EP3933935A1
公开(公告)日：2022-01-05
申请号：EP21187580.2
申请日：2016-03-09
申请人： Tamura Corporation , National Institute of Information and Communications Technology , National University Corporation Tokyo University Of Agriculture and Technology
发明人： SASAKI, Kohei , GOTO, Ken , HIGASHIWAKI, Masataka , KOUKITU, Akinori , KUMAGAI, Yoshinao , MURAKAMI, Hisashi
IPC分类号： H01L29/872 , H01L21/329 , H01L29/24 , C23C16/40 , C30B29/16 , H01L21/02 , H01L29/47
摘要： [Problem] To provide a Ga 2 O 3 -based high withstand voltage Schottky barrier diode having excellent withstand voltage characteristics. [Solution] According to one embodiment of the present invention, provided is a high withstand voltage Schottky barrier diode 1 having: a first layer 10, which is formed of a first Ga 2 O 3 -based single crystal containing a first Group IV element, and Cl at a concentration equal to or lower than 5×10 16 cm -3 , and which has an effective donor concentration not lower than 1×10 13 but not higher than 6.0×10 17 cm -3 ; a second layer 12, which is formed of a second Ga 2 O 3 -based single crystal containing a second Group IV element, and which has an effective donor concentration that is higher than that of the first layer 10, said second layer being laminated on the first layer 10; an anode electrode 14 formed on the first layer 10; and a cathode electrode 15 formed on the second layer 12.

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