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1. 发明申请

WO2005017962A9 SYSTEM AND PROCESS FOR PRODUCING NANOWIRE COMPOSITES AND ELECTRONIC SUBSTRATES THEREFROM 审中-公开
标题翻译：用于生产纳米复合材料的系统和方法以及其中的电子基板
公开(公告)号：WO2005017962A9
公开(公告)日：2005-03-31
申请号：PCT/US2004025064
申请日：2004-08-04
申请人： NANOSYS INC , BURETEA MIHAI , CHEN JIAN , CHOW CALVIN , NIU CHUNMING , PAN YAOLING , PARCE J WALLACE , ROMANO LINDA T , STUMBO DAVID
发明人： BURETEA MIHAI , CHEN JIAN , CHOW CALVIN , NIU CHUNMING , PAN YAOLING , PARCE J WALLACE , ROMANO LINDA T , STUMBO DAVID
IPC分类号： D02G3/00 , H01L21/336 , H01L21/44 , H01L29/06 , H01L29/423 , H01L29/786 , H01L33/06 , H01L33/24 , H01L51/00 , H01L51/05 , D01F9/12 , H01G4/32 , H01L29/78
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/42384 , H01L29/66742 , H01L29/78681 , H01L29/78696 , H01L33/06 , H01L33/24 , H01L51/0048 , H01L51/0545 , H01L2924/0002 , Y10T428/2913 , H01L2924/00
摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate (602) having nanowires (606) attached to a portion (604) of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally comprises separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.
摘要翻译：本发明涉及纳米线材料复合材料的制造方法和制造方法。提供了具有附着到至少一个表面的部分（604）上的纳米线（606）的衬底（602）。在该部分上沉积材料以形成纳米线材料复合材料。该方法进一步可选地包括从纳米线材料复合物与基底分离以形成独立的纳米线材料复合材料。独立的纳米线材料复合材料任选进一步加工成电子基片。可以使用本文所述的方法来生产各种电子基板。例如，可以由多个层叠的纳米线材料复合材料制成多色发光二极管，每个复合层发射不同波长的光。

2. 发明申请

WO2005017962A3 System and process for producing nanowire composites and electronic substrates therefrom 审中-公开
标题翻译：用于生产纳米线复合材料和电子基材的系统和工艺
公开(公告)号：WO2005017962A3
公开(公告)日：2006-01-26
申请号：PCT/US2004025064
申请日：2004-08-04
申请人： BURETEA MIHAI , CHEN JIAN , CHOW CALVIN , NIU CHUNMING , PAN YAOLING , PARCE J WALLACE , ROMANO LINDA T , STUMBO DAVID , NANOSYS INC
发明人： BURETEA MIHAI , CHEN JIAN , CHOW CALVIN , NIU CHUNMING , PAN YAOLING , PARCE J WALLACE , ROMANO LINDA T , STUMBO DAVID
IPC分类号： D02G3/00 , H01L21/336 , H01L21/44 , H01L29/06 , H01L29/423 , H01L29/786 , H01L33/06 , H01L33/24 , H01L51/00 , H01L51/05 , D01F9/12 , H01G4/32 , H01L29/78
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/42384 , H01L29/66742 , H01L29/78681 , H01L29/78696 , H01L33/06 , H01L33/24 , H01L51/0048 , H01L51/0545 , H01L2924/0002 , Y10T428/2913 , H01L2924/00
摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate (602) having nanowires (606) attached to a portion (604) of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally comprises separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

3. 发明专利

AU2004265938A1 System and process for producing nanowire composites and electronic substrates therefrom 未知
公开(公告)号：AU2004265938A1
公开(公告)日：2005-02-24
申请号：AU2004265938
申请日：2004-08-04
申请人： NANOSYS INC , BURETEA MIHAI , CHEN JIAN , CHOW CALVIN , NIU CHUNMING , PAN YAOLING , PARCE J , LINDA ROMANO , STUMBO DAVID
发明人： ROMANO LINDA T , CHEN JIAN , NIU CHUNMING , STUMBO DAVID , PARCE J WALLACE , CHOW CALVIN , BURETEA MIHAI , PAN YAOLING
IPC分类号： H01L21/44 , D02G3/00 , H01L21/336 , H01L29/06 , H01L29/423 , H01L29/786 , H01L33/06 , H01L33/24 , H01L51/00 , H01L51/05
摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

4. 发明申请

WO03085700A2 METHODS OF MAKING, POSITIONING AND ORIENTING NANOSTRUCTURES, NANOSTRUCTURE ARRAYS AND NANOSTRUCTURE DEVICES 审中-公开
标题翻译：制造，定位和面向纳米结构的方法，纳米结构阵列和纳米结构装置
公开(公告)号：WO03085700A2
公开(公告)日：2003-10-16
申请号：PCT/US0309827
申请日：2003-04-01
申请人： NANOSYS INC , EMPEDOCLES STEPHEN , BOCK LARRY , CHOW CALVIN , DUAN XIANFENG , NIU CHUNGMING , PONTIS GEORGE , SAHI VIJENDRA , ROMANO LINDA T , STUMBO DAVID
发明人： EMPEDOCLES STEPHEN , BOCK LARRY , CHOW CALVIN , DUAN XIANFENG , NIU CHUNGMING , PONTIS GEORGE , SAHI VIJENDRA , ROMANO LINDA T , STUMBO DAVID
IPC分类号： B81C99/00 , C23F1/00 , H01L51/30 , H01L51/40 , H01L
CPC分类号： H01L51/0048 , B01J23/52 , B81B2203/0361 , B81B2207/015 , B81C3/005 , B81C99/008 , B81C2203/057 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G11B5/743 , G11C2213/81 , H01L29/7869 , H01L51/0001 , H01L51/0595 , H01L2924/0002 , Y10S438/962 , Y10S977/762 , Y10S977/856 , Y10S977/857 , Y10S977/858 , Y10S977/89 , H01L2924/00
摘要： Nanostructure manufacturing methods and methods for assembling nanostructures into functional elements such as junctions, arrays and devices are provided. Systems for practicing the methods are also provided.
摘要翻译：提供了将纳米结构组装成功能元件如结，阵列和器件的纳米结构制造方法和方法。还提供了实施方法的系统。

5. 发明申请

WO2005112122A2 NANOWIRE VARACTOR DIODE AND METHODS OF MAKING SAME 审中-公开
标题翻译：纳米级变压器二极管及其制造方法
公开(公告)号：WO2005112122A2
公开(公告)日：2005-11-24
申请号：PCT/US2005008891
申请日：2005-03-17
申请人： NANOSYS INC , STUMBO DAVID , CHEN JIAN , HEALD DAVID , PAN YAOLING
发明人： STUMBO DAVID , CHEN JIAN , HEALD DAVID , PAN YAOLING
IPC分类号： H01L29/06 , H01L29/93
CPC分类号： B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/93 , Y10S977/762
摘要： A nanowire varactor diode and methods of making the same are disclosed. The structure comprises a coaxial capacitor running the length of the semiconductor nanowire. In one embodiment, a semiconductor nanowire of a first conductivity type is deposited on a substrate. An insulator is formed on at least a portion of the nanowire's surface. A region of the nanowire is doped with a second conductivity type material. A first electrical contact is formed on at least part of the insulator and the doped region. A second electrical contact is formed on a non-doped potion of the nanowire. During operation, the conductivity type at the surface of the nanowire inverts and a depletion region is formed upon application of a voltage to the first and second electrical contacts. The varactor diode thereby exhibits variable capacitance as a function of the applied voltage.
摘要翻译：公开了一种纳米线变容二极管及其制造方法。该结构包括运行半导体纳米线长度的同轴电容器。在一个实施例中，第一导电类型的半导体纳米线沉积在衬底上。在纳米线表面的至少一部分上形成绝缘体。纳米线的区域掺杂有第二导电类型的材料。在绝缘体和掺杂区域的至少一部分上形成第一电接触。在纳米线的非掺杂药液上形成第二电接触。在操作期间，纳米线表面的导电类型反转，并且在向第一和第二电触点施加电压时形成耗尽区。因此，变容二极管作为施加电压的函数呈现可变电容。

6. 发明申请

WO2006110162A3 ARTIFICIAL DIELECTRICS USING NANOSTRUCTURES 审中-公开
标题翻译：人造电子使用纳米结构
公开(公告)号：WO2006110162A3
公开(公告)日：2007-09-13
申请号：PCT/US2005029122
申请日：2005-08-16
申请人： NANOSYS INC , STUMBO DAVID , EMPEDOCLES STEVE , LEON FRANCISCO , PARCE J WALLACE
发明人： STUMBO DAVID , EMPEDOCLES STEVE , LEON FRANCISCO , PARCE J WALLACE
IPC分类号： H01L21/20 , B32B15/04 , H01L21/335 , H01L27/108 , H01L29/00 , H01L29/08 , H01L29/76
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , G11C2213/16 , G11C2213/81 , H01L29/0673 , H01L29/4908 , H01L51/0537 , Y10S977/743 , Y10S977/745 , Y10S977/762 , Y10S977/813 , Y10S977/936
摘要： Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial dielectric includes a dielectric material with a plurality of nanowires (or other nanostructures) embedded within the dielectric material. Very high dielectric constants can be achieved with an artificial dielectric using nanostructures. The dielectric constant can be adjusted by varying the length, diameter, carrier density, shape, aspect ration, orientation and density of the nanostructures. Additionally, a controllabe artificial dielectric using nanostructures, such as nanowires, is disclosed in which the dielectric constant can be dynamically adjusted by applying an electric field to the controllable artificial dielectric. A wide range of electronic devices can use artificial dielectrics with nanostructures to improve performance. Example devices include, capacitors thin film transistors, other types of thin film electronic devices, microstrip devices, surface acoustic wave (SAW) filters, other types of filters, and radar attenuating materials (RAM).
摘要翻译：公开了使用纳米结构的人造电介质，例如纳米线。在实施例中，公开了使用其他纳米结构的人造电介质，例如纳米棒，纳米管或纳米带等。人造电介质包括具有嵌入电介质材料内的多个纳米线（或其他纳米结构）的电介质材料。使用纳米结构的人造电介质可以实现非常高的介电常数。介电常数可以通过改变纳米结构的长度，直径，载流子密度，形状，长宽比，取向和密度来调节。另外，公开了使用纳米线等纳米结构的控制人造电介质，其中通过向可控人造电介质施加电场可以动态地调节介电常数。各种电子器件可以使用具有纳米结构的人造电介质来提高性能。示例性器件包括电容器薄膜晶体管，其他类型的薄膜电子器件，微带器件，表面声波（SAW）滤波器，其他类型的滤波器和雷达衰减材料（RAM）。

7. 发明申请

WO2005030636A3 METHODS, DEVICES AND COMPOSITIONS FOR DEPOSITING AND ORIENTING NANOSTRUCTURES 审中-公开
标题翻译：用于沉积和定向纳米结构的方法，装置和组合物
公开(公告)号：WO2005030636A3
公开(公告)日：2007-05-18
申请号：PCT/US2004030234
申请日：2004-09-15
申请人： NANOSYS INC , DUBROW ROBERT , ROMANO LINDA T , STUMBO DAVID
发明人： DUBROW ROBERT , ROMANO LINDA T , STUMBO DAVID
IPC分类号： C01B31/00 , B29C51/00 , B82B20060101 , C30B7/00 , C30B21/02 , C30B28/06 , H01L21/00 , H01L21/20 , H01L21/36
CPC分类号： H01L21/02422 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B7/00 , H01L21/02381 , H01L21/02521 , H01L21/02603 , H01L21/02656 , Y10S977/762 , Y10S977/827
摘要： Methods and systems for depositing nanornaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanornaterials on a transfer substrate and contacting the nanomaterials with an adherent material disposed upon a surface or portions of a surface of a receiving substrate. Orientation is optionally provided by moving the transfer and receiving substrates relative to each other during the transfer process.
摘要翻译：用于将纳米材料沉积到接收衬底上并任选地以期望取向沉积那些材料的方法和系统，其包括在转移衬底上提供纳米材料并使纳米材料与设置在接收衬底的表面或表面的部分上的粘附材料接触。可选地通过在传送过程中相对于彼此移动传送和接收基板来提供取向。

8. 发明专利

JP2011101047A Large-area nanoenabled macroelectronic substrate, and use therefor 审中-公开
标题翻译：大面积纳米大电子基板及其应用
公开(公告)号：JP2011101047A
公开(公告)日：2011-05-19
申请号：JP2011015801
申请日：2011-01-27
申请人： Nanosys Inc , ナノシス・インコーポレイテッドNanosys, Inc.
发明人： DUAN XIANGFENG , NIU CHUNMING , EMPEDOCLES STEPHEN , ROMANO LINDA T , CHEN JIAN , SAHI VIJENDRA , BOCK LAWRENCE , STUMBO DAVID , PARCE J WALLACE , GOLDMAN JAY L
IPC分类号： H01L29/06 , B82B1/00 , C01B31/02 , H01L21/00 , H01L21/331 , H01L21/336 , H01L21/77 , H01L27/12 , H01L29/737 , H01L29/786 , H01L29/861 , H01L33/06 , H01L33/20 , H01L33/26 , H01L35/34 , H01L41/18 , H01L41/193 , H01L41/22 , H01L41/24 , H01L51/00 , H01L51/05 , H03H11/20
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y25/00 , H01F1/0072 , H01L27/1214 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L33/08 , H01L33/18 , H01L35/26 , H01L35/32 , H01L41/082 , H01L41/18 , H01L41/316 , H01L51/0012 , H01L51/0048 , H01L51/0504 , H01L51/0508 , H01L51/0545 , H01L51/0595 , Y02E10/549
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for obtaining an electronic substrate including a plurality of semiconductor devices. SOLUTION: A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed in the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-type doping nanowires and n-type doping nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for arranging nanowires on substrates, nanowire spraying techniques for forming nanowires as a film, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface levels in nanowires are described. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种用于获得包括多个半导体器件的电子衬底的方法和装置。解决方案：在衬底上形成纳米线的薄膜。纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。在纳米线的薄膜中限定多个半导体区域。在半导体器件区域中形成触点，从而提供与多个半导体器件的电连接。此外，用于制造纳米线的各种材料，包括p型掺杂纳米线和n型掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上排列纳米线的流动掩模，用于形成纳米线作为膜的纳米线喷涂技术用于减少或消除纳米线中的电子的声子散射，并且描述了用于降低纳米线中的表面水平的技术。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2015046600A 大面積ナノ可能マクロエレクトロニクス基板およびその使用有权
标题翻译：大面积纳米大地电子基板及其应用
公开(公告)号：JP2015046600A
公开(公告)日：2015-03-12
申请号：JP2014184819
申请日：2014-09-11
申请人：ナノシス・インク. , Nanosys Inc
发明人： DUAN XIANGFENG , NIU CHUNMING , EMPEDOCLES STEPHEN , ROMANO LINDA T , CHEN JIAN , SAHI VIJENDRA , BOCK LAWRENCE , STUMBO DAVID , PARCE J WALLACE , GOLDMAN JAY L
IPC分类号： H01L29/06 , B82Y30/00 , B82Y40/00 , C01B31/02 , H01L21/00 , H01L21/28 , H01L21/322 , H01L21/329 , H01L21/331 , H01L21/336 , H01L21/77 , H01L27/12 , H01L29/737 , H01L29/786 , H01L29/861 , H01L29/868 , H01L29/872 , H01L31/0352 , H01L33/20 , H01L41/18 , H01L41/22 , H01L51/00 , H01L51/05 , H03H11/20
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y25/00 , H01F1/0072 , H01L27/1214 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L33/08 , H01L33/18 , H01L35/26 , H01L35/32 , H01L41/082 , H01L41/18 , H01L41/316 , H01L51/0012 , H01L51/0048 , H01L51/0504 , H01L51/0508 , H01L51/0545 , H01L51/0595 , Y02E10/549
摘要：【課題】複数の半導体デバイスを有する電子的な基板を得るための方法および装置を提供する。【解決手段】ナノワイヤ薄膜を、基板上に形成する。ナノワイヤ薄膜は、動作電流レベルを達成するのに十分なナノワイヤの密度を有するように形成する。複数の半導体領域を、ナノワイヤ薄膜に画定する。コンタクトを、半導体デバイス領域において形成し、それによって、電気的な接続を複数の半導体デバイスに提供する。【選択図】図3
摘要翻译：要解决的问题：提供一种用于获得包括多个半导体器件的电子衬底的方法和设备。解决方案：在衬底上形成纳米线薄膜。纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。在纳米线的薄膜中限定多个半导体区域。在半导体器件区域中形成触点，从而提供与多个半导体器件的电连接。

10. 发明专利

CA2580342A1 ARTIFICIAL DIELECTRICS USING NANOSTRUCTURES 未知
公开(公告)号：CA2580342A1
公开(公告)日：2006-10-19
申请号：CA2580342
申请日：2005-08-16
申请人： NANOSYS INC
发明人： LEON FRANCISCO , PARCE WALLACE J , EMPEDOCLES STEVEN A , STUMBO DAVID
IPC分类号： H05B37/00
摘要： Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial dielectric includes a dielectric material with a plurality of nanowires (or other nanostructures) embedded within the dielectric material. Very high dielectric constants can be achieved with an artificial dielectric using nanostructures. The dielectric constant can be adjusted by varying the length, diameter, carrier density, shape, aspect ratio, orientation and density of the nanostructures. Additionally, a controllable artificial dielectric using nanostructures, such as nanowires, is disclosed in which the dielectric constant can be dynamically adjusted by applying an electric field to the controllable artificial dielectric. A wide range of electronic devices can use artificial dielectrics with nanostructures to improve performance. Example devices include, capacitors, thin film transistors, other types of thin film electronic devices, microstrip devices, surface acoustic wave (SAW) filters, other types of filters, and radar attenuating materials (RAM).

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