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    • 2. 发明申请
    • ZONE MELT RECRYSTALLIZATION FOR INORGANIC FILMS
    • 无机膜的区域熔融再结晶
    • WO2009094124A2
    • 2009-07-30
    • PCT/US2009000301
    • 2009-01-16
    • NANOGRAM CORPHIESLMAIR HENRYMOSSO RONALD J
    • HIESLMAIR HENRYMOSSO RONALD J
    • H01L21/20
    • C30B13/14C30B29/06C30B29/08C30B29/52
    • ZMR apparatuses provide for controlled temperature flow through the system to reduce energy consumption while providing for desired crystal growth properties. The apparatus can include a cooling system to specifically remove a desired amount of heat from a melted film to facilitate crystallization. Furthermore, the apparatus can have heated walls to create a background temperature within the chamber that reduces energy use through the reduction or elimination of cooling for the chamber walls. The apparatuses and corresponding methods can be used with inorganic films directly or indirectly associated with a porous release layer that provides thermal insulation with respect to an underlying substrate. If the recrystallized film is removed from the substrate, the substrates can be reused. The methods can be used for large area silicon films with thicknesses from 2 microns to 100 microns, which are suitable for photovoltaic applications as well as electronics applications.
    • ZMR装置提供通过系统的受控温度流动以降低能量消耗,同时提供期望的晶体生长特性。 该装置可以包括冷却系统以从熔融的膜特异性地除去所需量的热量以促进结晶。 此外,该装置可以具有加热的壁以在腔室内产生背景温度,通过减少或消除室壁的冷却来减少能量消耗。 这些装置和相应的方法可以与与提供相对于下面的基底的热绝缘的多孔释放层直接或间接相关联的无机膜一起使用。 如果从衬底去除重结晶膜,则可以重新使用衬底。 该方法可用于厚度为2微米至100微米的大面积硅膜,适用于光伏应用以及电子应用。