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1. 发明申请

US20110165761A1 METHODS OF FABRICATING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES FABRICATED BY THE SAME 有权
标题翻译：制造半导体器件的方法及其制造的半导体器件
公开(公告)号：US20110165761A1
公开(公告)日：2011-07-07
申请号：US12961054
申请日：2010-12-06
申请人： Myung-Jong KIM , In-Seok Yeo , Dae-Hong Ko , Hyun-Chul Sohn , Mann-Ho Cho , Sang-Yeon Kim
发明人： Myung-Jong KIM , In-Seok Yeo , Dae-Hong Ko , Hyun-Chul Sohn , Mann-Ho Cho , Sang-Yeon Kim
IPC分类号： H01L21/20 , B82Y40/00
CPC分类号： H01L21/0237 , B82Y10/00 , B82Y40/00 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02653 , H01L29/0665 , H01L29/0676 , H01L29/66825 , H01L29/7881
摘要： Example methods and example embodiments include methods of fabricating semiconductor devices and semiconductor devices fabricated by the same. Example fabricating methods include forming a first nanowire, oxidizing the first nanowire to form a first nanostructure including a first insulator and a second nanowire, and oxidizing the second nanowire to form a second nanostructure including a second insulator and nanodots. Example semiconductor devices include nanostructures including nanodots and nanostructures providing storage nodes in memory devices.
摘要翻译：示例性方法和示例实施例包括制造由其制造的半导体器件和半导体器件的方法。示例性制造方法包括形成第一纳米线，氧化第一纳米线以形成包括第一绝缘体和第二纳米线的第一纳米结构，以及氧化第二纳米线以形成包括第二绝缘体和纳米点的第二纳米结构。示例性半导体器件包括在存储器件中提供存储节点的纳米结构和纳米结构。

2. 发明授权

US08420551B2 Methods of fabricating semiconductor devices and semiconductor devices fabricated by the same 有权
标题翻译：制造半导体器件和由其制造的半导体器件的方法
公开(公告)号：US08420551B2
公开(公告)日：2013-04-16
申请号：US12961054
申请日：2010-12-06
申请人： Myung-Jong Kim , In-Seok Yeo , Dae-Hong Ko , Hyun-Chul Sohn , Mann-Ho Cho , Sang-Yeon Kim
发明人： Myung-Jong Kim , In-Seok Yeo , Dae-Hong Ko , Hyun-Chul Sohn , Mann-Ho Cho , Sang-Yeon Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/0237 , B82Y10/00 , B82Y40/00 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02653 , H01L29/0665 , H01L29/0676 , H01L29/66825 , H01L29/7881
摘要： Example methods and example embodiments include methods of fabricating semiconductor devices and semiconductor devices fabricated by the same. Example fabricating methods include forming a first nanowire, oxidizing the first nanowire to form a first nanostructure including a first insulator and a second nanowire, and oxidizing the second nanowire to form a second nanostructure including a second insulator and nanodots. Example semiconductor devices include nanostructures including nanodots and nanostructures providing storage nodes in memory devices.
摘要翻译：示例性方法和示例实施例包括制造由其制造的半导体器件和半导体器件的方法。示例性制造方法包括形成第一纳米线，氧化第一纳米线以形成包括第一绝缘体和第二纳米线的第一纳米结构，以及氧化第二纳米线以形成包括第二绝缘体和纳米点的第二纳米结构。示例性半导体器件包括在存储器件中提供存储节点的纳米结构和纳米结构。

3. 发明申请

US20060117704A1 Built-up type box-shaped steel column for filling concrete therein and manufacturing method thereof 失效
标题翻译：用于填充混凝土的组合式箱形钢柱及其制造方法
公开(公告)号：US20060117704A1
公开(公告)日：2006-06-08
申请号：US11295296
申请日：2005-12-06
申请人： Young-Ho Yoon , Sang-Yeon Kim , Su-Jin Lee , Hyung-Geun Kim , Chang-Shin Lee , Soon-Woo Nam , Seok-Tae Kang , Chang-Nam Lee , Sung-Bae Kim
发明人： Young-Ho Yoon , Sang-Yeon Kim , Su-Jin Lee , Hyung-Geun Kim , Chang-Shin Lee , Soon-Woo Nam , Seok-Tae Kang , Chang-Nam Lee , Sung-Bae Kim
IPC分类号： E04C3/30
CPC分类号： E04C3/34
摘要： Disclosed herein is a built-up type box-shaped steel column for filling concrete therein, that can be formed easily and economically in a built-up scheme by using ┐-beams and steel plates, and a method for manufacturing the same that includes bonding a steel plate at the inner surface of a ┐-shapes during a process of making a built-up type box-shaped steel column, thereby having a good resistance against a lateral pressure of concrete filled in the steel column and preventing the bonded portion from being exposed to the outside to provide a better outer appearance. The built-up type box-shaped steel column for filling concrete therein, includes: a ┐-shapes disposed at each of the four corners of a box-shaped steel column to be formed; and a steel plate disposed between the ┐-shapes adjacent to each other for connecting the ┐-shapes with each other.
摘要翻译：本发明公开了一种用于在其中填充混凝土的积层型箱形钢柱，其可以通过使用桁梁和钢板在组合方案中容易且经济地形成，及其制造方法包括粘结在制造叠层型箱形钢柱的过程中，在内表面具有┐形的钢板，从而对填充在钢柱中的混凝土的侧向压力具有良好的抵抗力，并防止粘结部分暴露在外面以提供更好的外观。用于在其中填充混凝土的积层型箱形钢柱包括：设置在要形成的箱形钢柱的四个角中的每一个的┐形状; 以及设置在彼此相邻的┐形之间的钢板，用于将┐形彼此连接。

4. 发明授权

US07665259B2 Built-up rectangular steel column for filling concrete therein having L-shaped members and steel plates with curving projections and convex embossed portions 失效
标题翻译：用于填充混凝土的矩形钢柱，具有L形构件和具有弯曲凸起和凸形压花部分的钢板
公开(公告)号：US07665259B2
公开(公告)日：2010-02-23
申请号：US11295296
申请日：2005-12-06
申请人： Young-Ho Yoon , Sang-Yeon Kim , Su-Jin Lee , Hyung-Geun Kim , Chang-Shin Lee , Soon-Woo Nam , Seok-Tae Kang , Chang-Nam Lee , Sung-Bae Kim
发明人： Young-Ho Yoon , Sang-Yeon Kim , Su-Jin Lee , Hyung-Geun Kim , Chang-Shin Lee , Soon-Woo Nam , Seok-Tae Kang , Chang-Nam Lee , Sung-Bae Kim
IPC分类号： E04C3/34 , E04B1/18
CPC分类号： E04C3/34
摘要： Disclosed herein is a built-up type box-shaped steel column for filling concrete therein, that can be formed easily and economically in a built-up scheme by using ┐-beams and steel plates, and a method for manufacturing the same that includes bonding a steel plate at the inner surface of a ┐-shapes during a process of making a built-up type box-shaped steel column, thereby having a good resistance against a lateral pressure of concrete filled in the steel column and preventing the bonded portion from being exposed to the outside to provide a better outer appearance. The built-up type box-shaped steel column for filling concrete therein, includes: a ┐-shapes disposed at each of the four corners of a box-shaped steel column to be formed; and a steel plate disposed between the ┐-shapes adjacent to each other for connecting the ┐-shapes with each other.
摘要翻译：本发明公开了一种用于在其中填充混凝土的积层型箱形钢柱，其可以通过使用桁梁和钢板在组合方案中容易且经济地形成，及其制造方法包括粘结在制造叠层型箱形钢柱的过程中，在内表面具有┐形的钢板，从而对填充在钢柱中的混凝土的侧向压力具有良好的抵抗力，并防止粘结部分暴露在外面以提供更好的外观。用于在其中填充混凝土的积层型箱形钢柱包括：设置在要形成的箱形钢柱的四个角中的每一个的┐形状; 以及设置在彼此相邻的┐形之间的钢板，用于将┐形彼此连接。

5. 发明授权

US08680741B2 Haptic actuator using cellulose electro-active paper film 失效
标题翻译：触觉致动器采用纤维素电活性纸膜
公开(公告)号：US08680741B2
公开(公告)日：2014-03-25
申请号：US13295520
申请日：2011-11-14
申请人： Sang-Yeon Kim , Jae hwan Kim
发明人： Sang-Yeon Kim , Jae hwan Kim
IPC分类号： H01L41/08
CPC分类号： G06F3/016 , H01L41/094 , H01L41/193
摘要： A haptic actuator using a cellulose electro-active paper film is provided. The haptic actuator includes a cellulose electro-active paper film exhibiting a piezoelectric phenomenon and a metal electrode for applying electricity to the electro-active paper film, so that the haptic actuator can be provided in the form of a thin film, can manifest high transparency, and can produce displacement to the magnitude of sufficiently stimulating the sensor receptors of a user's skin in response to the applied electricity. Also, the haptic actuator is friendly to the environment and humans thanks to the use of cellulose which is an environmentally friendly material.
摘要翻译：提供了使用纤维素电活性纸膜的触觉致动器。触觉致动器包括显示压电现象的纤维素电活性纸膜和用于向电活性纸膜施加电力的金属电极，使得触觉致动器可以以薄膜的形式提供，可以表现出高透明度并且可以响应于所施加的电力而产生位移到充分刺激使用者皮肤的传感器受体的量级。此外，由于使用作为环境友好材料的纤维素，触觉致动器对环境和人类是友好的。

6. 发明授权

US06674404B1 Apparatus and method for detecting and correcting defective pixels in image sensor 有权
标题翻译：用于检测和校正图像传感器中的有缺陷的像素的装置和方法
公开(公告)号：US06674404B1
公开(公告)日：2004-01-06
申请号：US09474004
申请日：1999-12-28
申请人： Suk-Joong Lee , Sang-Yeon Kim
发明人： Suk-Joong Lee , Sang-Yeon Kim
IPC分类号： G06K940
CPC分类号： H04N5/367
摘要： A method for detecting and correcting a defective pixel in an image sensor including an M(row line)×N(column line) unit pixels, M and N being positive integers, includes a first step of electrically scanning photoelectric charges generated from unit pixels of a first row line for a first integration time and storing a first data corresponding to the photoelectric charges, a second step of electrically scanning photoelectric charges generated from the unit pixels of the first row line for a second integration time and storing a second data corresponding to the photoelectric charges, a third step of comparing the first data and the second data one another, if the first data is different from the second data, an error signal is generated and then a corresponding address of the unit pixel is stored as a defective pixel address, a fourth step of repeating the first to the third step to an Mth line by increasing an address by one, and a fifth step of comparing an address of a unit pixel to be read with the defective pixel address, if the address of the unit pixel is equal to the defective pixel address, a correction operation is performed to generated a corrected data.
摘要翻译：一种用于检测和校正包括M（行线）x N（列线）单元像素M和N为正整数的图像传感器中的缺陷像素的方法，包括：电扫描从单元像素第一行线，用于第一积分时间并存储对应于光电电荷的第一数据;第二步骤，从第一行线的单位像素产生的光电电荷电扫描第二积分时间，并存储对应于第光电电荷，如果第一数据与第二数据不同，则将第一数据和第二数据进行比较的第三步骤，产生误差信号，然后存储单位像素的相应地址作为缺陷像素地址，通过将地址增加1来重复第一至第三步骤到第M行的第四步骤，以及将单位像素的地址与b进行比较的第五步骤 e读取缺陷像素地址，如果单位像素的地址等于缺陷像素地址，则执行校正操作以产生校正数据。

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