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2. 发明申请

US20090154514A1 OPTICAL AMPLIFIER-INTEGRATED SUPER LUMINESCENT DIODE AND EXTERNAL CAVITY LASER USING THE SAME 有权
标题翻译：使用光学放大器集成超级发光二极管和外部激光
公开(公告)号：US20090154514A1
公开(公告)日：2009-06-18
申请号：US12182543
申请日：2008-07-30
申请人： Su Hwan OH , Jung Jin JU
发明人： Su Hwan OH , Jung Jin JU
IPC分类号： H01S5/026
CPC分类号： H01S5/141 , H01L33/0045 , H01S5/026 , H01S5/101 , H01S5/1014 , H01S5/16 , H01S5/227 , H01S5/50
摘要： Provided is a super luminescent diode having low power consumption due to low threshold current and a high output power in low-current operation, which is suitable for an external cavity laser. The super luminescent diode for use in the external cavity laser is divided into a super luminescent diode (SLD) region and a semiconductor optical amplifier (SOA) region to provide a light source having a low threshold current and a nearly double output power of a conventional SLD.A super luminescent diode-integrated reflective optical amplifier includes a substrate that has a super luminescent diode (SLD) region and a semiconductor optical amplifier (SOA) region for amplifying light generated from the SLD region, an optical waveguide that has a buried heterostructure, the buried heterostructure including an active layer extending over the SLD and SOA regions on the substrate and tapered in the SOA region; a current blocking layer formed around the active layer for blocking a current flow to layers other than the active layer, the current blocking layer including a stack of semiconductor layers having different conductivity types; and a clad layer formed on the optical waveguide and the current blocking layer.
摘要翻译：提供了一种超低功耗的超级发光二极管，由于低电流操作的低阈值电流和高输出功率而具有低功耗，适用于外腔激光器。用于外腔激光器的超发光二极管被分为超发光二极管（SLD）区域和半导体光放大器（SOA）区域，以提供具有低阈值电流和近似双输出功率的光源 SLD。超发光二极管集成反射光放大器包括具有超发光二极管（SLD）区域的基板和用于放大从SLD区域产生的光的半导体光放大器（SOA）区域，具有掩埋异质结构的光波导，包括在SLD上延伸的有源层和衬底上的SOA区域并在SOA区域中渐缩的掩埋异质结构; 电流阻挡层，形成在有源层周围，用于阻挡电流流向除有源层以外的层，电流阻挡层包括具有不同导电类型的半导体层的叠层; 以及形成在光波导和电流阻挡层上的覆层。

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