专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06438026B2 Magnetic field element having a biasing magnetic layer structure 失效
标题翻译：具有偏置磁性层结构的磁场元件
公开(公告)号：US06438026B2
公开(公告)日：2002-08-20
申请号：US09801629
申请日：2001-03-08
申请人： Murray Fulton Gillies , Antonius Emilius Theodorus Kuiper , Kars-Michiel Hubert Lenssen
发明人： Murray Fulton Gillies , Antonius Emilius Theodorus Kuiper , Kars-Michiel Hubert Lenssen
IPC分类号： G11C1100
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , G11C11/16 , H01F10/3254 , H01F10/3263 , H01F10/3268 , H01L27/224 , H01L43/08
摘要： A magnetic field element provided with a stack of a first magnetic layer structure (7), a second magnetic layer structure (11) having a substantially fixed direction of magnetization (M11), and a spacer layer structure (9) separating the first magnetic layer structure and the second magnetic layer structure from each other. The magnetic field element is further provided with a biasing means for applying a longitudinal bias field to the first magnetic layer structure, which biasing means includes a thin biasing magnetic layer structure (3) located opposite to the first magnetic layer structure. The biasing magnetic layer structure provides a magnetic coupling field component (M3) perpendicular to the direction of magnetization of the second magnetic layer structure and is separated from the first magnetic layer structure by a non-magnetic layer structure (5). The first magnetic layer structure is ferromagnetically coupled to the biasing magnet layer structure. The magnetic field element is suitable for very high density applications.
摘要翻译：具有第一磁性层结构（7）的堆叠的磁场元件，具有大致固定的磁化方向（M11）的第二磁性层结构（11）和分隔第一磁性层结构和第二磁性层结构。磁场元件还设置有用于向第一磁性层结构施加纵向偏置场的偏置装置，该偏置装置包括与第一磁性层结构相对定位的薄偏置磁性层结构（3）。偏置磁性层结构提供垂直于第二磁性层结构的磁化方向的磁耦合场分量（M3），并通过非磁性层结构（5）与第一磁性层结构分离。第一磁性层结构被铁磁耦合到偏置磁体层结构。磁场元件适用于非常高密度的应用。

2. 发明授权

US06891366B2 Magneto-resistive device with a magnetic multilayer structure 失效
标题翻译：具有磁性多层结构的磁阻元件
公开(公告)号：US06891366B2
公开(公告)日：2005-05-10
申请号：US09884219
申请日：2001-06-19
申请人： Kars-Michiel Hubert Lenssen , Antonius Emilius Theodorus Kuiper
发明人： Kars-Michiel Hubert Lenssen , Antonius Emilius Theodorus Kuiper
IPC分类号： G11B5/39 , G01R33/09 , H01F10/16 , H01F10/30 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , G01R33/02
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3909 , G11B2005/3996 , H01L27/222 , H01L43/08
摘要： A robust GMR or TMR effect type multilayer structure comprises a free and a pinned ferromagnetic layer, with a wide magnetic field range as required, for example in automotive applications. An odd number of non-adjacent ferromagnetic layers is used in an exchange-biased Artificial Anti-Ferromagnet as the pinned layer, and the exchange biasing layer is made of an IrMn type material.
摘要翻译：鲁棒的GMR或TMR效应型多层结构包括自由和固定的铁磁层，具有所需的宽磁场范围，例如在汽车应用中。在交换偏置的人造抗铁磁体中使用奇数个非相邻铁磁层作为被钉扎层，并且交换偏置层由IrMn型材料制成。

3. 发明授权

US06501678B1 Magnetic systems with irreversible characteristics and a method of manufacturing and repairing and operating such systems 有权
标题翻译：具有不可逆特性的磁性系统以及制造和修理和操作这种系统的方法
公开(公告)号：US06501678B1
公开(公告)日：2002-12-31
申请号：US09763206
申请日：2001-02-16
申请人： Kars-Michiel Hubert Lenssen , Derk Jan Adelerhof , Gerardus Henricus Johannes Somers , Joannes Baptist Adrianus Dionisius Van Zon , Antonius Emilius Theodorus Kuiper
发明人： Kars-Michiel Hubert Lenssen , Derk Jan Adelerhof , Gerardus Henricus Johannes Somers , Joannes Baptist Adrianus Dionisius Van Zon , Antonius Emilius Theodorus Kuiper
IPC分类号： G11C1100
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/096 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C17/02 , H01L27/22 , H01L27/222
摘要： A novel magnetic data storage system and a sensing system of magnetic characteristics are disclosed; the systems have a magnetization direction that is irreversible in an external magnetic field. A method of manufacturing, a method of resetting or changing or repairing and a method of operating such systems are also disclosed. The systems can include a set of magnetic devices in a balancing configuration; essentially each of said devices comprises a structure of layers including at least a first ferromagnetic layer and a second ferromagnetic layer with at least a separation layer of a non-magnetic material there between, said structure having at least a magneto resistance effect. The magnetization direction of the first ferromagnetic layer of at least one of said devices is irreversible in an external magnetic field higher than about 35 kA/m.
摘要翻译：公开了一种新型磁数据存储系统和磁特性检测系统; 系统具有在外部磁场中不可逆的磁化方向。还公开了一种制造方法，复位或更换或修理方法以及操作这种系统的方法。该系统可以包括一组平衡配置的磁性装置; 基本上每个所述装置包括至少包括第一铁磁层和第二铁磁层的层的结构，其中至少具有非磁性材料的分离层，所述结构至少具有磁阻效应。至少一个所述装置的第一铁磁层的磁化方向在高于约35kA / m的外部磁场中是不可逆的。

4. 发明授权

US06465053B1 Method for manufacturing a magnetic device 失效
标题翻译：磁性装置的制造方法
公开(公告)号：US06465053B1
公开(公告)日：2002-10-15
申请号：US09763207
申请日：2001-02-16
申请人： Kars-Michiel Hubert Lenssen , Antonius Emilius Theodorus Kuiper , Joannes Baptist Adrianus Dionisius Van Zon
发明人： Kars-Michiel Hubert Lenssen , Antonius Emilius Theodorus Kuiper , Joannes Baptist Adrianus Dionisius Van Zon
IPC分类号： H01F100
CPC分类号： H01L27/22 , B82Y25/00 , G01R33/093 , G01R33/096
摘要： Magnetic field sensors and magnetic memories have at least two magnetoresistive bridge elements (A,B,C,D), wherein each magnetoresistive element comprises a free (F) and a pinned (P) ferromagnetic layer. The magnetization directions of pinned ferromagnetic layers are different for the two bridge elements. In the method, in a first deposition step, a first ferromagnetic layer of one of the two said elements is deposited, during which deposition a magnetic field is applied to pin the magnetization direction MP in the first ferromagnetic layer in a first direction. Then, in a second deposition step, a second ferromagnetic layer of the other of the two said elements is deposited, during which deposition a magnetic field is applied to pin the magnetization direction in the second ferromagnetic layer in a second direction different from, preferably opposite to, the magnetization direction in the first ferromagnetic layer.
摘要翻译：磁场传感器和磁存储器具有至少两个磁阻桥元件（A，B，C，D），其中每个磁阻元件包括自由（F）和钉扎（P）铁磁层。钉扎铁磁层的磁化方向对于两个桥接元件是不同的。在该方法中，在第一沉积步骤中，沉积两个所述元件之一的第一铁磁层，在该沉积期间，施加磁场以在第一方向上将第一铁磁层中的磁化方向MP钉入。然后，在第二沉积步骤中，沉积两个所述元件中的另一个的第二铁磁层，在该沉积期间，施加磁场以在第二方向上沿第二方向钉扎第二铁磁层中的磁化方向，优选地相反到第一铁磁层中的磁化方向。

5. 发明授权

US06661071B2 Memory having plural magnetic layers and a shielding layer 有权
标题翻译：存储器具有多个磁性层和屏蔽层
公开(公告)号：US06661071B2
公开(公告)日：2003-12-09
申请号：US09886184
申请日：2001-06-21
申请人： Kars-Michiel Hubert Lenssen , Jacobus Josephus Maria Ruigrok
发明人： Kars-Michiel Hubert Lenssen , Jacobus Josephus Maria Ruigrok
IPC分类号： H01L2982
CPC分类号： G11C11/16 , G11C11/14 , G11C11/15 , Y10T428/325
摘要： The object of the invention is the shielding of a magnetic memory against high external magnetic fields. The magnetic memory (1) comprises an array of magnetic memory elements (2), each memory element (3) including at least one layer of magnetic material (4). The operation of the magnetic memory elements (3) is based on a magnetoresistance effect. The memory (1) is protected against high external magnetic fields by a shielding layer (14), which has been split into regions (5) covering the memory elements (3). The magnetic memory (1) is not erased by high external magnetic fields because of a strong attenuation of the external magnetic field by the regions (5) of the shielding layer (14).
摘要翻译：本发明的目的是抵抗高外部磁场的磁存储器的屏蔽。磁存储器（1）包括磁存储元件阵列（2），每个存储元件（3）包括至少一层磁性材料（4）。磁存储元件（3）的操作基于磁阻效应。存储器（1）通过已经被分割成覆盖存储元件（3）的区域（5）的屏蔽层（14）来防止高的外部磁场。由于屏蔽层（14）的区域（5）对外部磁场的强烈衰减，所以磁存储器（1）不被高的外部磁场擦除。

6. 发明申请

US20090073738A1 Active Shielding for a Circuit Comprising Magnetically Sensitive Materials 有权
标题翻译：包含磁敏材料的电路的主动屏蔽
公开(公告)号：US20090073738A1
公开(公告)日：2009-03-19
申请号：US12277537
申请日：2008-11-25
申请人： Kars-Michiel Hubert Lenssen
发明人： Kars-Michiel Hubert Lenssen
IPC分类号： G11C7/02 , G11C11/06 , G11C11/00
CPC分类号： G11C7/02 , G01R33/025 , G11C11/15 , G11C11/16 , G11C11/1675 , G11C11/1695
摘要： The present invention provides a method for providing magnetic shielding for a circuit comprising magnetically sensitive materials, comprising actively shielding the circuit from a disturbing magnetic field. A corresponding semiconductor device is also provided. The method and device allows shielding for strong disturbing magnetic fields.
摘要翻译：本发明提供了一种用于为包括磁敏材料的电路提供磁屏蔽的方法，包括主动屏蔽电路免受干扰磁场的影响。还提供了相应的半导体器件。该方法和装置允许屏蔽强烈的干扰磁场。

7. 发明授权

US07224634B2 Hardware security device for magnetic memory cells 有权
标题翻译：磁性存储单元的硬件安全装置
公开(公告)号：US07224634B2
公开(公告)日：2007-05-29
申请号：US10539795
申请日：2003-12-15
申请人： Kars-Michiel Hubert Lenssen , Adrianus Johannes Maria Denissen , Nicolaas Lambert
发明人： Kars-Michiel Hubert Lenssen , Adrianus Johannes Maria Denissen , Nicolaas Lambert
IPC分类号： G11C8/20
CPC分类号： H01L23/57 , G11C11/16 , G11C11/1695 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a special structure of magnetic elements, e.g. MRAM elements, as a security device for IC's containing magnetic memory cells. In an example embodiment, the structure may comprise a combination of two or more associated magnetic elements with pre-set anti-parallel magnetization directions. By determining the polarisation directions of the magnetic elements, exposure to an external magnetic field can be detected. Inverse polarisation directions indicate a normal situation, aligned polarisation directions indicate that the MRAM-array has been exposed to an external field. In this way it can be detected whether a user has tried to erase or alter the data stored in the MRAM in an illegal way. The IC can regularly check the resistance of the security system during operation. Upon detection of a field exposure, the IC can erase all MRAM data, reset itself or, block its functioning.
摘要翻译：本发明提供了一种磁性元件的特殊结构。 MRAM元件作为包含磁存储单元的IC的安全装置。在示例性实施例中，该结构可以包括具有预设的反并联磁化方向的两个或更多个相关联的磁性元件的组合。通过确定磁性元件的极化方向，可以检测到暴露于外部磁场。反偏振方向表示正常情况，对准偏振方向表示MRAM阵列暴露于外部场。以这种方式，可以检测用户是否尝试以非法方式擦除或更改存储在MRAM中的数据。 IC可以在运行期间定期检查安全系统的电阻。在检测到场曝光时，IC可以擦除所有MRAM数据，自身复位或阻止其功能。

8. 发明授权

US06986151B2 Information carrier, apparatus, substrate, and system 失效
标题翻译：信息载体，仪器，基板和系统
公开(公告)号：US06986151B2
公开(公告)日：2006-01-10
申请号：US09940044
申请日：2001-08-27
申请人： Kars-Michiel Hubert Lenssen , Cornelis Maria Hart
发明人： Kars-Michiel Hubert Lenssen , Cornelis Maria Hart
IPC分类号： G11B7/24
CPC分类号： G06K19/045 , G11B23/28
摘要： An information carrier that contains a storage unit, an integrated circuit and a first and a second coupling element. The coupling elements are intermediate in the transfer of data and energy from a base station to the integrated circuit and vice versa. Between the base station and the coupling elements the transfer of data and energy is contactless, and preferably by capacitive coupling. Between at least the first of and preferably both of the coupling elements data and energy are transferred by means of capacitive coupling. The base station is preferably incorporated in an apparatus further containing the reading device of the storage unit. To facilitate the capacitive coupling, the base station contains a first and a second capacitor plate. The information carrier (1) and the apparatus (40) with the base station containing the capacitor plates together constitute the system, which is suitable for any protection of the information on the storage unit.
摘要翻译：一种包含存储单元，集成电路以及第一和第二耦合元件的信息载体。耦合元件在从基站到集成电路的数据和能量的传输中是中间的，反之亦然。在基站和耦合元件之间，数据和能量的传输是非接触的，并且优选地通过电容耦合。在至少第一耦合元件和优选两个耦合元件之间，通过电容耦合传送数据和能量。基站优选地并入到还包含存储单元的读取装置的装置中。为了便于电容耦合，基站包含第一和第二电容器板。具有包含电容器板的基站的信息载体（1）和装置（40）构成系统，其适合于对存储单元上的信息的任何保护。

9. 发明授权

US08261367B2 Method and device for protection of an MRAM device against tampering 有权
标题翻译：用于保护MRAM设备免受篡改的方法和设备
公开(公告)号：US08261367B2
公开(公告)日：2012-09-04
申请号：US12708874
申请日：2010-02-19
申请人： Kars-Michiel Hubert Lenssen , Robert Jochemsen
发明人： Kars-Michiel Hubert Lenssen , Robert Jochemsen
IPC分类号： G06F11/30 , G06F12/14 , G11C19/08 , G11C15/02 , G11C11/06 , G11C11/00
CPC分类号： H01L23/57 , G06F21/79 , G06K19/07372 , G11C8/20 , G11C11/1695 , H01L2924/0002 , Y10S257/922 , H01L2924/00
摘要： Data, stored in MRAM-cells should be protected against misuse or read-out by unauthorized persons. The present invention provides an array of MRAM-cells provided with a security device for destroying data stored in the MRAM-cells when they are tampered with. This is achieved by placing a permanent magnet adjacent the MRAM-array in combination with a soft-magnetic flux-closing layer. As long as the soft-magnetic layer is present, the magnetic field lines from the permanent magnet are deviated and flow through this soft-magnetic layer. When somebody is tampering with the MRAM-array, e.g. by means of reverse engineering, and the flux-closing layer is removed, the flux is no longer deviated and affects the nearby MRAM-array, thus destroying the data stored in the MRAM-cells.
摘要翻译：存储在MRAM单元中的数据应受到保护，防止未经授权的人员误用或读取。本发明提供了一种具有安全装置的MRAM单元的阵列，用于当它们被篡改时，用于销毁存储在MRAM单元中的数据。这通过将MRAM阵列相邻的永磁体与软磁通量闭合层组合来实现。只要存在软磁性层，来自永磁体的磁场线就会偏离并流过该软磁层。当某人篡改MRAM阵列时，例如通过逆向工程，除去磁通密闭层，磁通不会偏离，影响附近的MRAM阵列，从而破坏存储在MRAM单元中的数据。

10. 发明授权

US07791920B2 Active shielding for a circuit comprising magnetically sensitive materials 有权
标题翻译：包括磁敏材料的电路的主动屏蔽
公开(公告)号：US07791920B2
公开(公告)日：2010-09-07
申请号：US12277537
申请日：2008-11-25
申请人： Kars-Michiel Hubert Lenssen
发明人： Kars-Michiel Hubert Lenssen
IPC分类号： G11C7/02
CPC分类号： G11C7/02 , G01R33/025 , G11C11/15 , G11C11/16 , G11C11/1675 , G11C11/1695
摘要： The present invention provides a method for providing magnetic shielding for a circuit comprising magnetically sensitive materials, comprising actively shielding the circuit from a disturbing magnetic field. A corresponding semiconductor device is also provided. The method and device allows shielding for strong disturbing magnetic fields.
摘要翻译：本发明提供了一种用于为包括磁敏材料的电路提供磁屏蔽的方法，包括主动屏蔽电路免受干扰磁场的影响。还提供了相应的半导体器件。该方法和装置允许屏蔽强烈的干扰磁场。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式