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    • 4. 发明申请
    • Semiconductor Device
    • 半导体器件
    • US20110149189A1
    • 2011-06-23
    • US13039378
    • 2011-03-03
    • Munehiro AzamiShou NagaoYoshifumi Tanada
    • Munehiro AzamiShou NagaoYoshifumi Tanada
    • G02F1/136
    • H01L29/786H03K19/01714H03K19/01721
    • There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance (205) is provided between a gate and a source of a TFT (203) connected to an output node, and a circuit formed of TFTs (201) and (202) has a function to bring a node α into a floating state. When the node α is in the floating state, a potential of the node α is caused higher than VDD by using gate-source capacitance coupling of the TFT (203) through the capacitance (205), thus an output signal having an amplitude of VDD-GND can be normally obtained without causing amplitude attenuation due to the threshold value of the TFT.
    • 提供了一种半导体器件,其中可以通过仅使用一种导电类型的TFT构成电路并且可以正常获得输出信号的电压振幅来减小制造步骤。 电容(205)设置在连接到输出节点的TFT(203)的栅极和源极之间,并且由TFT(201)和(202)形成的电路具有使节点α成为浮置状态的功能 。 当节点α处于浮置状态时,通过使用TFT(203)通过电容(205)的栅源电容耦合,使节点α的电位高于VDD,因此具有VDD的幅度的输出信号 通常可以获得-GND,而不会由于TFT的阈值引起振幅衰减。
    • 5. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20060061384A1
    • 2006-03-23
    • US11270647
    • 2005-11-10
    • Munehiro AzamiShou NagaoYoshifumi Tanada
    • Munehiro AzamiShou NagaoYoshifumi Tanada
    • H03K19/0175
    • H01L29/786H03K19/01714H03K19/01721
    • There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance (205) is provided between a gate and a source of a TFT (203) connected to an output node, and a circuit formed of TFTs (201) and (202) has a function to bring a node α into a floating state. When the node α is in the floating state, a potential of the node α is caused higher than VDD by using gate-source capacitance coupling of the TFT (203) through the capacitance (205), thus an output signal having an amplitude of VDD-GND can be normally obtained without causing amplitude attenuation due to the threshold value of the TFT.
    • 提供了一种半导体器件,其中可以通过仅使用一种导电类型的TFT构成电路并且可以正常获得输出信号的电压振幅来减小制造步骤。 电容(205)设置在连接到输出节点的TFT(203)的栅极和源极之间,并且由TFT(201)和(202)形成的电路具有使节点α成为浮置状态的功能 。 当节点α处于浮置状态时,通过使用TFT(203)通过电容(205)的栅 - 源电容耦合,使得节点α的电位高于VDD,因此具有VDD的幅度的输出信号 通常可以获得-GND,而不会由于TFT的阈值引起振幅衰减。
    • 8. 发明申请
    • Semiconductor Device
    • 半导体器件
    • US20090322716A1
    • 2009-12-31
    • US12552718
    • 2009-09-02
    • Munehiro AzamiShou NagaoYoshifumi Tanada
    • Munehiro AzamiShou NagaoYoshifumi Tanada
    • G06F3/038H01L27/088H03K17/16H01L29/786H03K19/094G09G3/36
    • H01L29/786H03K19/01714H03K19/01721
    • There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance (205) is provided between a gate and a source of a TFT (203) connected to an output node, and a circuit formed of TFTs (201) and (202) has a function to bring a node α into a floating state. When the node α is in the floating state, a potential of the node α is caused higher than VDD by using gate-source capacitance coupling of the TFT (203) through the capacitance (205), thus an output signal having an amplitude of VDD-GND can be normally obtained without causing amplitude attenuation due to the threshold value of the TFT.
    • 提供了一种半导体器件,其中可以通过仅使用一种导电类型的TFT构成电路并且可以正常获得输出信号的电压振幅来减小制造步骤。 电容(205)设置在连接到输出节点的TFT(203)的栅极和源极之间,并且由TFT(201)和(202)形成的电路具有使节点α成为浮置状态的功能 。 当节点α处于浮置状态时,通过使用TFT(203)通过电容(205)的栅 - 源电容耦合,使得节点α的电位高于VDD,因此具有VDD的幅度的输出信号 通常可以获得-GND,而不会由于TFT的阈值引起振幅衰减。
    • 9. 发明授权
    • Pulse output circuit, shift register, and display device
    • 脉冲输出电路,移位寄存器和显示器件
    • US07394102B2
    • 2008-07-01
    • US11328456
    • 2006-01-10
    • Shou NagaoMunehiro AzamiYoshifumi Tanada
    • Shou NagaoMunehiro AzamiYoshifumi Tanada
    • H01L27/12
    • G09G3/3648G09G3/3614G09G3/3688G09G2300/0408G09G2300/0426G09G2310/0254G09G2310/0283G09G2310/0286G09G2310/0289G09G2310/0291G09G2310/0297G09G2310/08G11C19/00G11C19/28H01L2924/0002H03K19/01735H03K19/096H01L2924/00
    • A circuit is provided which is constituted by TFTs of one conductivity type, and which is capable of outputting signals of a normal amplitude. When an input clock signal CK1 becomes a high level, each of TFTs (101, 103) is turned on to settle at a low level the potential at a signal output section (Out). A pulse is then input to a signal input section (In) and becomes high level. The gate potential of TFT (102) is increased to (VDD−V thN) and the gate is floated. TFT (102) is thus turned on. Then CK1 becomes low level and each of TFTs (101, 103) is turned off. Simultaneously, CK3 becomes high level and the potential at the signal output section is increased. Simultaneously, the potential at the gate of TFT (102) is increased to a level equal to or higher than (VDD+V thN) by the function of capacitor (104), so that the high level appearing at the signal output section (Out) becomes equal to VDD. When SP becomes low level; CK3 becomes low level; and CK1 becomes high level, the potential at the signal output section (Out) becomes low level again.
    • 提供一种电路,其由一种导电类型的TFT构成,并且能够输出正常振幅的信号。 当输入时钟信号CK 1变为高电平时,TFT(101,103)中的每一个导通以将信号输出部分(Out)处的电位置于低电平。 然后将脉冲输入到信号输入部(In)并变为高电平。 TFT(102)的栅极电位增加到(VDD-V thN),栅极浮起来。 TFT(102)因此被导通。 然后,CK 1变为低电平,并且每个TFT(101,103)被关断。 同时,CK 3变为高电平,信号输出部分的电位增加。 同时,通过电容器(104)的功能,TFT(102)的栅极处的电位增加到等于或高于(VDD + V thN)的电平,使得出现在信号输出部分(Out )变为等于VDD。 当SP变低时 CK 3变低; 并且CK 1变为高电平时,信号输出部(Out)的电位再次变为低电平。
    • 10. 发明授权
    • Pulse output circuit, shift register, and display device
    • 脉冲输出电路,移位寄存器和显示器件
    • US07151278B2
    • 2006-12-19
    • US10699797
    • 2003-11-04
    • Shou NagaoMunehiro AzamiYoshifumi Tanada
    • Shou NagaoMunehiro AzamiYoshifumi Tanada
    • H01L29/04
    • G09G3/3648G09G3/3614G09G3/3688G09G2300/0408G09G2300/0426G09G2310/0254G09G2310/0283G09G2310/0286G09G2310/0289G09G2310/0291G09G2310/0297G09G2310/08G11C19/00G11C19/28H01L2924/0002H03K19/01735H03K19/096H01L2924/00
    • A circuit is provided which is constituted by TFTs of one conductivity type, and which is capable of outputting signals of a normal amplitude. When an input clock signal CK1 becomes a high level, each of TFTs (101, 103) is turned on to settle at a low level the potential at a signal output section (Out). A pulse is then input to a signal input section (In) and becomes high level. The gate potential of TFT (102) is increased to (VDD−V thN) and the gate is floated. TFT (102) is thus turned on. Then CK1 becomes low level and each of TFTs (101, 103) is turned off. Simultaneously, CK3 becomes high level and the potential at the signal output section is increased. Simultaneously, the potential at the gate of TFT (102) is increased to a level equal to or higher than (VDD+V thN) by the function of capacitor (104), so that the high level appearing at the signal output section (Out) becomes equal to VDD. When SP becomes low level; CK3 becomes low level; and CK1 becomes high level, the potential at the signal output section (Out) becomes low level again.
    • 提供一种电路,其由一种导电类型的TFT构成,并且能够输出正常振幅的信号。 当输入时钟信号CK 1变为高电平时,TFT(101,103)中的每一个导通以将信号输出部分(Out)处的电位置于低电平。 然后将脉冲输入到信号输入部(In)并变为高电平。 TFT(102)的栅极电位增加到(VDD-V thN),栅极浮起来。 TFT(102)因此被导通。 然后,CK 1变为低电平,并且每个TFT(101,103)被关断。 同时,CK 3变为高电平,信号输出部分的电位增加。 同时,通过电容器(104)的功能,TFT(102)的栅极处的电位增加到等于或高于(VDD + V thN)的电平,使得出现在信号输出部分(Out )变为等于VDD。 当SP变低时 CK 3变低; 并且CK 1变为高电平时,信号输出部(Out)的电位再次变为低电平。