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    • 1. 发明申请
    • THIN FILM TRANSISTOR ARRAY PANEL FOR A LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME
    • 用于液晶显示器的薄膜晶体管阵列及其制造方法
    • US20080035971A1
    • 2008-02-14
    • US11750630
    • 2007-05-18
    • Mun-Pyo HONGWoon-Yong PARKJong-Soo YOON
    • Mun-Pyo HONGWoon-Yong PARKJong-Soo YOON
    • H01L29/76H01L21/00
    • G02F1/13458G02F1/1362G02F1/136227G02F2001/136236H01L27/12H01L27/124H01L27/1288H01L29/41733H01L29/458Y10S438/942Y10S438/947Y10S438/949
    • Simplified method of manufacturing liquid crystal displays. A gate wire including a gate line, a gate pad and a gate electrode is formed on the substrate by using the first mask. A gate insulating layer, a semiconductor layer, a ohmic contact layer and a metal layer are sequentially deposited to make a quadruple layers, and patterned by a dry etch of using the second mask. At this time, the quadruple layers is patterned to have a matrix of net shape layout and covering the gate wire. An opening exposing the substrate is formed in the display area and a contact hole exposing the gate pad is formed in the peripheral area. Next, ITO is deposited and a photoresist layer coated on the ITO. Then, the ITO layer is patterned by using the third mask and a dry etch, and the data conductor layer and the ohmic contact layer not covered by the ITO layer is dry etched. After depositing a passivation layer, a opening is formed by using the fourth mask and the exposed semiconductor layer through the opening is etched to separate the semiconductor layer under the adjacent data line.
    • 制造液晶显示器的简化方法。 通过使用第一掩模在基板上形成包括栅极线,栅极焊盘和栅电极的栅极线。 依次沉积栅极绝缘层,半导体层,欧姆接触层和金属层以制成四层,并通过使用第二掩模的干蚀刻图案化。 此时,四层被图案化以具有网状布局的矩阵并覆盖栅极线。 在显示区域形成露出基板的开口,在周边区域形成露出栅极焊盘的接触孔。 接下来,沉积ITO并且涂覆在ITO上的光致抗蚀剂层。 然后,通过使用第三掩模和干蚀刻对ITO层进行图案化,并且数据导体层和未被ITO层覆盖的欧姆接触层被干蚀刻。 在沉积钝化层之后,通过使用第四掩模形成开口,并蚀刻通过开口的暴露的半导体层以将相邻数据线下的半导体层分离。
    • 2. 发明申请
    • THIN FILM TRANSISTOR ARRAY PANEL FOR A LIQUID CRYSTAL DISPLAY AND A METHOD FOR MANUFACTURING THE SAME
    • 用于液晶显示器的薄膜晶体管阵列板及其制造方法
    • US20090179202A1
    • 2009-07-16
    • US12364736
    • 2009-02-03
    • Mun-Pyo HONGWoon-Yong PARKJong-Soo YOON
    • Mun-Pyo HONGWoon-Yong PARKJong-Soo YOON
    • H01L33/00
    • G02F1/13458G02F1/1362G02F1/136227G02F2001/136236H01L27/12H01L27/124H01L27/1288H01L29/41733H01L29/458Y10S438/942Y10S438/947Y10S438/949
    • Simplified method of manufacturing liquid crystal displays. A gate wire including a gate line, a gate pad and a gate electrode is formed on the substrate by using the first mask. A gate insulating layer, a semiconductor layer, a ohmic contact layer and a metal layer are sequentially deposited to make a quadruple layers, and patterned by a dry etch of using the second mask. At this time, the quadruple layers is patterned to have a matrix of net shape layout and covering the gate wire. An opening exposing the substrate is formed in the display area and a contact hole exposing the gate pad is formed in the peripheral area. Next, ITO is deposited and a photoresist layer coated on the ITO. Then, the ITO layer is patterned by using the third mask and a dry etch, and the data conductor layer and the ohmic contact layer not covered by the ITO layer is dry etched. After depositing a passivation layer, a opening is formed by using the fourth mask and the exposed semiconductor layer through the opening is etched to separate the semiconductor layer under the adjacent data line.
    • 制造液晶显示器的简化方法。 通过使用第一掩模在基板上形成包括栅极线,栅极焊盘和栅电极的栅极线。 依次沉积栅极绝缘层,半导体层,欧姆接触层和金属层以制成四层,并通过使用第二掩模的干蚀刻图案化。 此时,四层被图案化以具有网状布局的矩阵并覆盖栅极线。 在显示区域形成露出基板的开口,在周边区域形成露出栅极焊盘的接触孔。 接下来,沉积ITO并且涂覆在ITO上的光致抗蚀剂层。 然后,通过使用第三掩模和干蚀刻对ITO层进行图案化,并且数据导体层和未被ITO层覆盖的欧姆接触层被干蚀刻。 在沉积钝化层之后,通过使用第四掩模形成开口,并蚀刻通过开口的暴露的半导体层以将相邻数据线下的半导体层分离。