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1. 发明申请

US20080029898A1 VIA STACK STRUCTURES 审中-公开
标题翻译：通过堆叠结构
公开(公告)号：US20080029898A1
公开(公告)日：2008-02-07
申请号：US11461511
申请日：2006-08-01
申请人： Mukta G. Farooq , Robert Hannon , Dae Young Jung , Ian D. Melville , Donna S. Zupanski-Nielsen
发明人： Mukta G. Farooq , Robert Hannon , Dae Young Jung , Ian D. Melville , Donna S. Zupanski-Nielsen
IPC分类号： H01L23/48
CPC分类号： H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： Via stack structures are disclosed. In one embodiment, a structure includes a via stack including: a first substantially cross-shaped line in a first dielectric layer; a second substantially cross-shaped line set in a second dielectric layer, and a via stud coupling the first substantially cross-shaped line to the second substantially cross-shaped line. In another embodiment, a structure includes a first via stack, and a second via stack, wherein the first via stack and the second via stack extend in a divergent manner from one another. Each via stack structure is useful for support, for example, in under wire bond applications. The via stack structures can be mixed with other via stack structures and selectively placed within a layout to replace conventional metal plate and via stud array configurations.
摘要翻译：公开了通过堆叠结构。在一个实施例中，结构包括通孔堆叠，其包括：第一介电层中的第一基本十字形的线; 设置在第二电介质层中的第二基本上十字形的线，以及将第一基本上十字形的线耦合到第二基本十字形线的通孔柱。在另一个实施例中，结构包括第一通孔堆叠和第二通孔堆叠，其中第一通孔堆叠和第二通孔堆叠以彼此发散的方式延伸。每个通孔堆叠结构可用于支持，例如在引线键合应用中。通孔堆叠结构可以与其它通孔堆叠结构混合并且选择性地放置在布局内以代替传统的金属板和经由螺柱阵列配置。

2. 发明申请

US20080038913A1 METHODS OF FORMING ALUMINUM-FREE WIRE BOND PAD AND PAD SO FORMED 审中-公开
标题翻译：形成无铝线焊盘和垫片的方法
公开(公告)号：US20080038913A1
公开(公告)日：2008-02-14
申请号：US11463642
申请日：2006-08-10
申请人： Mukta G. Farooq , Robert Hannon , Ian D. Melville , Kevin S. Petrarca , Donna S. Zupanski-Nielsen
发明人： Mukta G. Farooq , Robert Hannon , Ian D. Melville , Kevin S. Petrarca , Donna S. Zupanski-Nielsen
IPC分类号： H01L21/44
CPC分类号： H01L24/02 , H01L24/45 , H01L2224/04042 , H01L2224/45144 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2224/48
摘要： Methods of forming an aluminum-free wire bond pad and the pad so formed are disclosed. In one embodiment, the method includes forming an opening through a dielectric layer to a last metal of a chip; forming a tantalum nitride (TaN) layer over the chip and over the opening; removing the tantalum nitride (TaN) layer outside of the opening; forming a passivation mask layer over the chip including a passivation mask opening over the last metal; forming a titanium tungsten (TiW) layer and a copper (Cu) layer over the chip; forming a mask layer over the chip including a mask opening to the copper (Cu) layer over the last metal; forming a nickel (Ni) layer and a copper (Cu) layer and then a gold (Au) layer in the mask opening; and removing the mask.
摘要翻译：公开了形成无铝线接合焊盘和如此形成的焊盘的方法。在一个实施例中，该方法包括通过电介质层形成开口至芯片的最后一个金属; 在芯片上并在开口上形成氮化钽（TaN）层; 去除开口外面的氮化钽（TaN）层; 在所述芯片上形成钝化掩模层，其包括在最后一个金属上的钝化掩模开口; 在芯片上形成钛钨（TiW）层和铜（Cu）层; 在所述芯片上形成掩模层，所述掩模层包括在最后金属上的铜（Cu）层的掩模开口; 在掩模开口中形成镍（Ni）层和铜（Cu）层，然后形成金（Au）层; 并取下面罩。

3. 发明授权

US07312529B2 Structure and method for producing multiple size interconnections 有权
标题翻译：用于生产多尺寸互连的结构和方法
公开(公告)号：US07312529B2
公开(公告)日：2007-12-25
申请号：US11160669
申请日：2005-07-05
申请人： Lawrence Clevenger , Mukta G. Farooq , Louis L. Hsu , William F. Landers , Donna S. Zupanski-Nielsen , Carl J. Radens , Chih-Chao Yang
发明人： Lawrence Clevenger , Mukta G. Farooq , Louis L. Hsu , William F. Landers , Donna S. Zupanski-Nielsen , Carl J. Radens , Chih-Chao Yang
IPC分类号： H01L23/48 , H01L23/52 , H01L23/40
CPC分类号： H05K3/3436 , H01L23/13 , H01L23/49811 , H01L23/49816 , H01L23/49838 , H01L24/11 , H01L24/12 , H01L24/17 , H01L24/49 , H01L24/73 , H01L24/81 , H01L2224/0401 , H01L2224/0603 , H01L2224/06102 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/1403 , H01L2224/49109 , H01L2224/81801 , H01L2924/00013 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H05K2201/094 , H05K2201/09736 , H05K2201/09845 , Y02P70/613 , H01L2224/29099 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： An electrical structure and method comprising a first substrate electrically and mechanically connected to a second substrate. The first substrate comprises a first electrically conductive pad and a second electrically conductive pad. The second substrate comprises a third electrically conductive pad, a fourth electrically conductive pad, and a first electrically conductive member. The fourth electrically conductive pad comprises a height that is different than a height of the first electrically conductive member. The electrically conductive member is electrically and mechanically connected to the fourth electrically conductive pad. A first solder ball connects the first electrically conductive pad to the third electrically conductive pad. The first solder ball comprises a first diameter. A second solder ball connects the second electrically conductive pad to the first electrically conductive member. The second solder ball comprises a second diameter. The first diameter is greater than said second diameter.
摘要翻译：一种电结构和方法，包括电和机械地连接到第二衬底的第一衬底。第一基板包括第一导电焊盘和第二导电焊盘。第二基板包括第三导电焊盘，第四导电焊盘和第一导电部件。第四导电焊盘包括与第一导电构件的高度不同的高度。导电构件电连接和机械地连接到第四导电垫。第一焊球将第一导电焊盘连接到第三导电焊盘。第一焊球包括第一直径。第二焊球将第二导电焊盘连接到第一导电构件。第二焊球包括第二直径。第一直径大于所述第二直径。

4. 发明申请

US20080203585A1 INTERCONNECTIONS FOR FLIP-CHIP USING LEAD-FREE SOLDERS AND HAVING REACTION BARRIER LAYERS 有权
公开(公告)号：US20080203585A1
公开(公告)日：2008-08-28
申请号：US12113108
申请日：2008-04-30
申请人： Keith E. Fogel , Balaram Ghosal , Sung K. Kang , Stephen Kilpatrick , Paul A. Lauro , Henry A. Nye , Da-Yuan Shih , Donna S. Zupanski-Nielsen
发明人： Keith E. Fogel , Balaram Ghosal , Sung K. Kang , Stephen Kilpatrick , Paul A. Lauro , Henry A. Nye , Da-Yuan Shih , Donna S. Zupanski-Nielsen
IPC分类号： H01L23/52
CPC分类号： H01L24/05 , H01L24/03 , H01L24/11 , H01L24/12 , H01L2224/03912 , H01L2224/0401 , H01L2224/05 , H01L2224/1147 , H01L2224/11849 , H01L2224/119 , H01L2224/13023 , H01L2224/13099 , H01L2224/131 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01055 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/30107 , H01L2924/00014
摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

5. 发明申请

US20070166992A1 METHOD FOR FABRICATING LAST LEVEL COPPER-TO-C4 CONNECTION WITH INTERFACIAL CAP STRUCTURE 有权
标题翻译：用于制作最终级铜对C4连接的方法
公开(公告)号：US20070166992A1
公开(公告)日：2007-07-19
申请号：US11306983
申请日：2006-01-18
申请人： Timothy H. Daubenspeck , William F. Landers , Donna S. Zupanski-Nielsen
发明人： Timothy H. Daubenspeck , William F. Landers , Donna S. Zupanski-Nielsen
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05147 , H01L2224/05575 , H01L2224/05599 , H01L2224/1148 , H01L2224/13007 , H01L2224/13022 , H01L2224/13111 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/01015
摘要： The present invention relates to a method for fabricating a semiconductor device with a last level copper-to-C4 connection that is essentially free of aluminum. Specifically, the last level copper-to-C4 connection comprises an interfacial cap structure containing CoWP, NiMoP, NiMoB, NiReP, NiWP, and combinations thereof. Preferably, the interfacial cap structure comprises at least one CoWP layer. Such a CoWP layer can be readily formed over a last level copper interconnect by a selective electroless plating process.
摘要翻译：本发明涉及一种用于制造具有基本上不含铝的最后一级铜对C4连接的半导体器件的方法。具体地说，最后一级的铜对C4连接包括含有CoWP，NiMoP，NiMoB，NiReP，NiWP及其组合的界面盖结构。优选地，界面帽结构包括至少一个CoWP层。这种CoWP层可以通过选择性无电镀方法容易地在最后一级铜互连上形成。

6. 发明申请

US20120012642A1 INTERCONNECTIONS FOR FLIP-CHIP USING LEAD-FREE SOLDERS AND HAVING REACTION BARRIER LAYERS 审中-公开
标题翻译：使用无铅焊盘和具有反应障碍层的片芯互连
公开(公告)号：US20120012642A1
公开(公告)日：2012-01-19
申请号：US13244576
申请日：2011-09-25
申请人： Keith E. Fogel , Balaram Ghosal , Sung K. Kang , Stephen Kilpatrick , Paul A. Lauro , Henry A. Nye, III , Da-Yuan Shih , Donna S. Zupanski-Nielsen
发明人： Keith E. Fogel , Balaram Ghosal , Sung K. Kang , Stephen Kilpatrick , Paul A. Lauro , Henry A. Nye, III , Da-Yuan Shih , Donna S. Zupanski-Nielsen
IPC分类号： B23K35/14 , B23K35/24
CPC分类号： H01L24/05 , H01L24/03 , H01L24/11 , H01L24/12 , H01L2224/03912 , H01L2224/0401 , H01L2224/05 , H01L2224/1147 , H01L2224/11849 , H01L2224/119 , H01L2224/13023 , H01L2224/13099 , H01L2224/131 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01055 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/30107 , H01L2924/00014
摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components. With a two-layer ball-limiting composition comprising an adhesion/reaction barrier layer, wherein the adhesion/reaction barrier layer serves both as an adhesion layer and a reaction barrier layer, the adhesion/reaction barrier layer can be comprised of a material selected from the group consisting of Zr and ZrN
摘要翻译：一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限球组合物，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。使用包含粘合/反应阻挡层的双层球限制组合物，其中粘附/反应阻挡层既用作粘合层又用作反应阻挡层，粘合/反应阻挡层可以由选自由Zr和ZrN组成的组

7. 发明授权

US08487304B2 High performance compliant wafer test probe 有权
标题翻译：高性能兼容晶圆测试探头
公开(公告)号：US08487304B2
公开(公告)日：2013-07-16
申请号：US12771697
申请日：2010-04-30
申请人： S. Jay Chey , Dustin M. Fregeau , Donna S. Zupanski-Nielsen , Aparna Prabhakar , Pavan Samudrala , Mohammed S. Shaikh
发明人： S. Jay Chey , Dustin M. Fregeau , Donna S. Zupanski-Nielsen , Aparna Prabhakar , Pavan Samudrala , Mohammed S. Shaikh
IPC分类号： H01L23/58 , H01L23/48 , H01L23/52
CPC分类号： G01R1/06716 , G01R1/06733 , G01R1/06755 , H01L2224/16225 , H01L2924/15311
摘要： An electrical connection includes a first electrical contact made of electrically conductive material. The first electrical contact is formed with a depression therein. Also included are a deformable pad, having a Young's modulus of less than 1,000,000 psi, which bears on the first contact; and a second electrical contact, made of electrically conductive material, which contacts the first electrical contact and is at least partially received into the depression. The deformable pad at least partially causes at least one lateral force on the first electrical contact, so as to induce the first electrical contact to make an electrical connection with the second electrical contact. An array of such contacts is also contemplated, as is an array of cantilevered contacts, which may or may not have depressions, and which are supported by at least one elastomeric pad, having a Young's modulus of less 72,500 psi.
摘要翻译：电连接包括由导电材料制成的第一电接触。第一电触点在其中形成凹陷。还包括具有小于1,000,000psi的杨氏模量的可变形垫，其承载在第一接触件上; 以及由导电材料制成的第二电接触件，其接触所述第一电触头并且至少部分地容纳在所述凹部中。可变形焊盘至少部分地在第一电触头上引起至少一个横向力，以便引起第一电触点与第二电触点电连接。还设想了这种接触件的阵列，悬臂接触件阵列也可以具有或不具有凹陷，并且由至少一个弹性垫支撑，杨氏模量小于72,500psi。

8. 发明申请

US20110266539A1 High Performance Compliant Wafer Test Probe 有权
标题翻译：高性能合格晶圆测试探头
公开(公告)号：US20110266539A1
公开(公告)日：2011-11-03
申请号：US12771697
申请日：2010-04-30
申请人： S. Jay Chey , Dustin M. Fregeau , Donna S. Zupanski-Nielsen , Aparna Prabhakar , Pavan Samudrala , Mohammed S. Shaikh
发明人： S. Jay Chey , Dustin M. Fregeau , Donna S. Zupanski-Nielsen , Aparna Prabhakar , Pavan Samudrala , Mohammed S. Shaikh
IPC分类号： H01L23/544 , H01L23/58
CPC分类号： G01R1/06716 , G01R1/06733 , G01R1/06755 , H01L2224/16225 , H01L2924/15311
摘要： An electrical connection includes a first electrical contact made of electrically conductive material. The first electrical contact is formed with a depression therein. Also included are a deformable pad, having a Young's modulus of less than 1,000,000 psi, which bears on the first contact; and a second electrical contact, made of electrically conductive material, which contacts the first electrical contact and is at least partially received into the depression. The deformable pad at least partially causes at least one lateral force on the first electrical contact, so as to induce the first electrical contact to make an electrical connection with the second electrical contact. An array of such contacts is also contemplated, as is an array of cantilevered contacts, which may or may not have depressions, and which are supported by at least one elastomeric pad, having a Young's modulus of less 72,500 psi.
摘要翻译：电连接包括由导电材料制成的第一电接触。第一电触点在其中形成凹陷。还包括具有小于1,000,000psi的杨氏模量的可变形垫，其承载在第一接触件上; 以及由导电材料制成的第二电接触件，其接触所述第一电触头并且至少部分地容纳在所述凹部中。可变形焊盘至少部分地在第一电触头上引起至少一个横向力，以便引起第一电触点与第二电触点电连接。还设想了这种接触件的阵列，悬臂接触件阵列也可以具有或不具有凹陷，并且由至少一个弹性垫支撑，杨氏模量小于72,500psi。

9. 发明授权

US07923849B2 Interconnections for flip-chip using lead-free solders and having reaction barrier layers 有权
标题翻译：使用无铅焊料并具有反应阻挡层的倒装芯片的互连
公开(公告)号：US07923849B2
公开(公告)日：2011-04-12
申请号：US12113152
申请日：2008-04-30
申请人： Keith E. Fogel , Balaram Ghosal , Sung K. Kang , Stephen Kilpatrick , Paul A. Lauro , Henry A. Nye, III , Da-Yuan Shih , Donna S. Zupanski-Nielsen
发明人： Keith E. Fogel , Balaram Ghosal , Sung K. Kang , Stephen Kilpatrick , Paul A. Lauro , Henry A. Nye, III , Da-Yuan Shih , Donna S. Zupanski-Nielsen
IPC分类号： H01L21/00
CPC分类号： H01L24/05 , H01L24/03 , H01L24/11 , H01L24/12 , H01L2224/03912 , H01L2224/0401 , H01L2224/05 , H01L2224/1147 , H01L2224/11849 , H01L2224/119 , H01L2224/13023 , H01L2224/13099 , H01L2224/131 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01055 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/30107 , H01L2924/00014
摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.
摘要翻译：一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限球组合物，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

10. 发明授权

US09335346B2 High performance compliant wafer test probe 有权
公开(公告)号：US09335346B2
公开(公告)日：2016-05-10
申请号：US13608706
申请日：2012-09-10
申请人： S. Jay Chey , Dustin M. Fregeau , Donna S. Zupanski-Nielsen , Aparna Prabhakar , Pavan Samudrala , Mohammed S. Shaikh
发明人： S. Jay Chey , Dustin M. Fregeau , Donna S. Zupanski-Nielsen , Aparna Prabhakar , Pavan Samudrala , Mohammed S. Shaikh
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , G01R1/067
CPC分类号： G01R1/06716 , G01R1/06733 , G01R1/06755 , H01L2224/16225 , H01L2924/15311
摘要： An electrical connection includes a first electrical contact made of electrically conductive material. The first electrical contact is formed with a depression therein. Also included are a deformable pad, having a Young's modulus of less than 1,000,000 psi, which bears on the first contact; and a second electrical contact, made of electrically conductive material, which contacts the first electrical contact and is at least partially received into the depression. The deformable pad at least partially causes at least one lateral force on the first electrical contact, so as to induce the first electrical contact to make an electrical connection with the second electrical contact. An array of such contacts is also contemplated, as is an array of cantilevered contacts, which may or may not have depressions, and which are supported by at least one elastomeric pad, having a Young's modulus of less 72,500 psi.

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