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    • 1. 发明申请
    • SIDEWALLS OF ELECTROPLATED COPPER INTERCONNECTS
    • 电镀铜互连的边界
    • US20130334691A1
    • 2013-12-19
    • US13525823
    • 2012-06-18
    • Mukta G. FarooqJohn A. FitzsimmonsTroy L. Graves-Abe
    • Mukta G. FarooqJohn A. FitzsimmonsTroy L. Graves-Abe
    • H01L23/52H01L21/283
    • H05K3/423H01L21/76844H01L21/76846H01L21/76858H01L21/76898H01L23/481H01L23/53209H01L23/53214H01L23/53238H01L23/53242H01L23/53257H01L2924/0002Y10T428/12764H01L2924/00
    • A structure formed in an opening having a substantially vertical sidewall defined by a non-metallic material and having a substantially horizontal bottom defined by a conductive pad, the structure including a diffusion barrier covering the sidewall and a fill composed of conductive material. The structure including a first intermetallic compound separating the diffusion barrier from the conductive material, the first intermetallic compound comprises an alloying material and the conductive material, and is mechanically bound to the conductive material, the alloying material is at least one of the materials selected from the group of chromium, tin, nickel, magnesium, cobalt, aluminum, manganese, titanium, zirconium, indium, palladium, and silver; and a first high friction interface located between the diffusion barrier and the first intermetallic compound and parallel to the sidewall of the opening, wherein the first high friction interface results in a mechanical bond between the diffusion barrier and the first intermetallic compound.
    • 一种形成在开口中的结构,其具有由非金属材料限定的基本上垂直的侧壁,并且具有由导电垫限定的基本上水平的底部,该结构包括覆盖侧壁的扩散阻挡层和由导电材料构成的填充物。 所述结构包括将所述扩散阻挡物与所述导电材料分离的第一金属间化合物,所述第一金属间化合物包括合金材料和所述导电材料,并且机械地结合到所述导电材料上,所述合金材料是选自以下的至少一种材料: 铬,锡,镍,镁,钴,铝,锰,钛,锆,铟,钯和银的组合; 以及位于所述扩散阻挡层和所述第一金属间化合物之间且平行于所述开口的侧壁的第一高摩擦界面,其中所述第一高摩擦界面导致所述扩散阻挡层和所述第一金属间化合物之间的机械结合。
    • 9. 发明授权
    • Sidewalls of electroplated copper interconnects
    • 电镀铜互连的侧壁
    • US08791005B2
    • 2014-07-29
    • US13525823
    • 2012-06-18
    • Mukta G. FarooqJohn A. FitzsimmonsTroy L. Graves-Abe
    • Mukta G. FarooqJohn A. FitzsimmonsTroy L. Graves-Abe
    • H01L23/532
    • H05K3/423H01L21/76844H01L21/76846H01L21/76858H01L21/76898H01L23/481H01L23/53209H01L23/53214H01L23/53238H01L23/53242H01L23/53257H01L2924/0002Y10T428/12764H01L2924/00
    • A structure formed in an opening having a substantially vertical sidewall defined by a non-metallic material and having a substantially horizontal bottom defined by a conductive pad, the structure including a diffusion barrier covering the sidewall and a fill composed of conductive material. The structure including a first intermetallic compound separating the diffusion barrier from the conductive material, the first intermetallic compound comprises an alloying material and the conductive material, and is mechanically bound to the conductive material, the alloying material is at least one of the materials selected from the group of chromium, tin, nickel, magnesium, cobalt, aluminum, manganese, titanium, zirconium, indium, palladium, and silver; and a first high friction interface located between the diffusion barrier and the first intermetallic compound and parallel to the sidewall of the opening, wherein the first high friction interface results in a mechanical bond between the diffusion barrier and the first intermetallic compound.
    • 一种形成在开口中的结构,其具有由非金属材料限定的基本上垂直的侧壁,并且具有由导电垫限定的基本上水平的底部,该结构包括覆盖侧壁的扩散阻挡层和由导电材料构成的填充物。 所述结构包括将所述扩散阻挡物与所述导电材料分离的第一金属间化合物,所述第一金属间化合物包括合金材料和所述导电材料,并且机械地结合到所述导电材料上,所述合金材料是选自以下的至少一种材料: 铬,锡,镍,镁,钴,铝,锰,钛,锆,铟,钯和银的组合; 以及位于所述扩散阻挡层和所述第一金属间化合物之间且平行于所述开口的侧壁的第一高摩擦界面,其中所述第一高摩擦界面导致所述扩散阻挡层和所述第一金属间化合物之间的机械结合。