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1. 发明授权

US6153074A Recording material for electro-coagulation printing and method for printing thereon 失效
标题翻译：电凝印刷用记录材料及其印刷方法
公开(公告)号：US6153074A
公开(公告)日：2000-11-28
申请号：US266585
申请日：1999-03-11
申请人： Motoko Hiraki , Shinichi Nagasaki , Masayuki Kamei
发明人： Motoko Hiraki , Shinichi Nagasaki , Masayuki Kamei
IPC分类号： B41J2/385 , B41C1/10 , B41M3/00 , B41L33/00
CPC分类号： B41C1/105
摘要： A recording material having a compression modulus of elasticity of 650 kgf/cm.sup.2 or less in the direction of the thickness thereof and exhibiting a maximum strain of 0.08 or more generated under pressure of 40 kgf/cm.sup.2 in the thickness direction of the recording material, can record thereon electro-coagulated ink images with high clarity and color density by electro-coagulation printing.
摘要翻译：在记录材料的厚度方向上，在其厚度方向上的压缩弹性模量为650kgf / cm 2以下且在40kgf / cm 2的压力下产生的最大应变为0.08以上的记录材料可以在其上记录通过电凝印刷具有高透明度和色密度的电凝图像。

2. 发明申请

US20060209478A1 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US20060209478A1
公开(公告)日：2006-09-21
申请号：US11358045
申请日：2006-02-22
申请人： Katsuya Arai , Toshihiro Kougami , Masayuki Kamei
发明人： Katsuya Arai , Toshihiro Kougami , Masayuki Kamei
IPC分类号： H02H9/00
CPC分类号： H01L27/0262
摘要： A semiconductor integrated circuit device includes: a protected circuit protected against electro-static discharge applied from outside the device; an SCR protection circuit having an anode terminal connected to a power line, a cathode terminal connected to a ground line and a trigger terminal; and a trigger circuit connected to the trigger terminal and including an RC circuit connected between the power line and the ground line.
摘要翻译：一种半导体集成电路器件，包括：保护电路，用于防止从器件外部施加的静电放电; SCR保护电路，其具有连接到电力线的阳极端子，连接到接地线的阴极端子和触发端子; 以及连接到触发端子并且包括连接在电力线和接地线之间的RC电路的触发电路。

3. 发明授权

US5302316A Optical fiber coating composition 失效
标题翻译：光纤涂料组合物
公开(公告)号：US5302316A
公开(公告)日：1994-04-12
申请号：US827212
申请日：1992-01-30
申请人： Yutaka Hashimoto , Jun Shirakami , Masayuki Kamei
发明人： Yutaka Hashimoto , Jun Shirakami , Masayuki Kamei
IPC分类号： C03C25/24 , C03C25/10 , C08F20/10 , C08F20/22 , C08F220/20 , C08F220/22 , C08F220/24 , C09D4/00 , G02B1/04 , G02B6/44 , C09K3/00
CPC分类号： G02B1/048 , C03C25/105 , C09D4/00
摘要： A curing composition comprising (1) a fluorine-containing curing monomer containing a fluorinated alkyl group having not less than 6 carbon atoms, (2) a fluorine-containing curing monomer containing a fluorinated alkyl group having not more than 5 carbon atoms, and (3) a polyfunctional curing monomer, the weight ratio of said fluorine-containing curing monomer (1) to said fluorine-containing curing monomer (2) ranging from 75/25 to 99/1. The composition is coated on an optical fiber base and cured by active energy rays to provide a core/clad optical fiber excellent in transparency, mechanical strength, environmental resistance, and optical characteristics.
摘要翻译：一种固化组合物，其包含（1）含有不少于6个碳原子的氟化烷基的含氟固化单体，（2）含有不多于5个碳原子的氟化烷基的含氟固化单体和（ 3）多官能固化单体，所述含氟固化单体（1）与所述含氟固化单体（2）的重量比为75/25至99/1。将该组合物涂布在光纤基材上并通过活性能量线固化，得到透明性，机械强度，耐环境性和光学特性优异的芯/包层光纤。

4. 发明授权

US4431595A Fluorine-containing aminosulfonate 失效
标题翻译：含氟氨基磺酸盐
公开(公告)号：US4431595A
公开(公告)日：1984-02-14
申请号：US301413
申请日：1981-09-11
申请人： Yutaka Hashimoto , Masayuki Kamei , Toshihiko Umaba , Tadashi Ito
发明人： Yutaka Hashimoto , Masayuki Kamei , Toshihiko Umaba , Tadashi Ito
IPC分类号： C11D1/92 , B01F17/00 , B01F17/24 , B01F17/26 , B01F17/38 , B01F17/42 , C07C67/00 , C07C301/00 , C07C309/14 , C07C309/45 , C07C143/02
CPC分类号： B01F17/0057 , Y10S516/05 , Y10S516/91
摘要： A fluorine-containing aminosulfonate of the general formulaR.sub.f -Q.sub.l -N(R.sub.1)-Q.sub.2 -N(R.sub.2)-Q.sub.3 -SO.sub.3 Mwherein R.sub.f represents a perfluorinated aliphatic group having 3 to 16 carbon atoms; Q.sub.1 represents --CH.sub.2 --.sub.h in which h represents an integer of 1 to 6, --CH.sub.2 CH.sub.2 Z--.sub.i in which Z represents --O-- or --S--, and i represents an integer of 1 to 4, ##STR1## or a combination of these; Q.sub.2 and Q.sub.3 are identical or different and each represents --CH.sub.2 --.sub.j in which j represents an integer of 1 to 6, ##STR2## in which R.sub.3 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, or ##STR3## M represents a hydrogen atom, an alkali metal atom, an alkaline earth methal atom, or --N(H).sub.m (R.sub.4).sub.n in which R.sub.4 represents an alkyl group having 1 to 3 carbon atoms, and m and n represent 0 or an integer of 1 to 4 provided that m+n=4; R.sub.1 represents a hydrogen atom or an alkyl group having 1 to 12 carbon atoms; and R.sub.2 represents a hydrogen atom, an alkyl or hydroxyalkyl group having 1 to 4 carbon atoms, --Q.sub.3 SO.sub.3 M in which Q.sub.3 and M are as defined, or --CH.sub.2 --.sub.k COOM in which M is as defined and k represents an integer of 1 to 4.
摘要翻译：通式为Rf-Q1-N（R1）-Q2-N（R2）-Q3-SO3M的含氟氨基磺酸盐，其中Rf表示具有3至16个碳原子的全氟化脂族基团; Q1表示-CH2-h，其中h表示1〜6的整数，Z表示-O-或-S-的-CH 2 CH 2 Z-i，i表示1〜4的整数，或者这些; Q2和Q3相同或不同，各自表示-CH2-j，其中j表示1至6的整数，其中R 3表示氢原子或具有1至4个碳原子的烷基，或 M表示氢原子，碱金属原子，碱土金属原子或其中R 4表示具有1至3个碳原子的烷基的-N（H）m（R 4）n，m和n表示0或 1〜4的整数，只要m + n = 4; R1表示氢原子或碳原子数1〜12的烷基。 R2表示氢原子，碳原子数1〜4的烷基或羟烷基，其中Q3和M如上所定义的-Q3SO3M或其中M定义为-CH2-kCOOM，k表示1〜4的整数。

5. 发明授权

US07440248B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US07440248B2
公开(公告)日：2008-10-21
申请号：US11358045
申请日：2006-02-22
申请人： Katsuya Arai , Toshihiro Kougami , Masayuki Kamei
发明人： Katsuya Arai , Toshihiro Kougami , Masayuki Kamei
IPC分类号： H02H3/20 , H02H3/22 , H02H9/04
CPC分类号： H01L27/0262
摘要： A semiconductor integrated circuit device includes: a protected circuit protected against electro-static discharge applied from outside the device; an SCR protection circuit having an anode terminal connected to a power line, a cathode terminal connected to a ground line and a trigger terminal; and a trigger circuit connected to the trigger terminal and including an RC circuit connected between the power line and the ground line.
摘要翻译：一种半导体集成电路器件，包括：保护电路，用于防止从器件外部施加的静电放电; SCR保护电路，其具有连接到电力线的阳极端子，连接到接地线的阴极端子和触发端子; 以及连接到触发端子并且包括连接在电力线和接地线之间的RC电路的触发电路。

6. 发明授权

US06338877B1 Method for rapidly imparting hydrophobicity to a hydrophilicity-imparted oxide solid surface 失效
标题翻译：快速赋予赋予亲水性氧化物固体表面疏水性的方法
公开(公告)号：US06338877B1
公开(公告)日：2002-01-15
申请号：US09520616
申请日：2000-03-07
申请人： Masayuki Kamei , Takefumi Mitsuhashi
发明人： Masayuki Kamei , Takefumi Mitsuhashi
IPC分类号： B05D312
CPC分类号： B41N3/006
摘要： A method for rapidly imparting hydrophobicity to an oxide solid surface, which comprises exerting a mechanical stimulation to a desired region of a hydrophilicity-imparted oxide solid surface, to change said region to be hydrophobic.
摘要翻译：一种快速赋予氧化物固体表面的疏水性的方法，其包括向所需的亲水性赋予氧化物固体表面的区域施加机械刺激，以将所述区域改变为疏水性。

7. 发明授权

US08237205B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08237205B2
公开(公告)日：2012-08-07
申请号：US12538534
申请日：2009-08-10
申请人： Masayuki Kamei , Kyouji Yamashita , Daisaku Ikoma
发明人： Masayuki Kamei , Kyouji Yamashita , Daisaku Ikoma
IPC分类号： H01L29/76
CPC分类号： H01L29/665 , H01L21/28088 , H01L21/28202 , H01L21/76897 , H01L29/41775 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7843 , Y10S257/90
摘要： A semiconductor device includes a gate insulating film formed on a semiconductor region of a first conductivity type; a gate electrode formed on the gate insulating film; an offset spacer formed on a side surface of the gate electrode; an inner sidewall formed on the side surface of the gate electrode with the offset spacer interposed therebetween, and having an L-shaped cross section; and an insulating film formed to cover the gate electrode, the offset spacer, the inner sidewall, and a part of the semiconductor region located laterally outward from the inner sidewall. The offset spacer includes an inner offset spacer formed on the side surface of the gate electrode and an outer offset spacer formed to cover the side surface of the gate electrode and the inner offset spacer. The outer offset spacer is in contact with a top end and outer side surface of the inner offset spacer.
摘要翻译：半导体器件包括形成在第一导电类型的半导体区域上的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; 形成在所述栅电极的侧面上的偏移间隔物; 在所述栅电极的侧面上形成有所述偏移间隔物的内侧壁，并具有L形截面; 以及绝缘膜，形成为覆盖从内侧壁侧向外侧的栅电极，偏移间隔件，内侧壁和半导体区域的一部分。偏移间隔件包括形成在栅电极的侧表面上的内偏移间隔件和形成为覆盖栅电极的侧表面和内偏移间隔件的外偏移间隔件。外部偏移间隔件与内部偏移间隔件的顶端和外侧表面接触。

8. 发明授权

US07709911B2 Semiconductor device having silicide transistors and non-silicide transistors formed on the same substrate and method for fabricating the same 有权
标题翻译：具有形成在同一衬底上的硅化物晶体管和非硅化物晶体管的半导体器件及其制造方法
公开(公告)号：US07709911B2
公开(公告)日：2010-05-04
申请号：US11522996
申请日：2006-09-19
申请人： Masayuki Kamei , Isao Miyanaga , Takayuki Yamada
发明人： Masayuki Kamei , Isao Miyanaga , Takayuki Yamada
IPC分类号： H01L29/78
CPC分类号： H01L21/823425 , H01L21/823418 , H01L21/823443
摘要： A semiconductor device includes a first MIS transistor of a non-salicide structure and a second MIS transistor of a salicide structure which are both formed on a substrate of silicon. The first MIS transistor includes a first gate electrode of silicon, first sidewalls, a first source and drain, and plasma reaction films grown in a plasma atmosphere to cover the top surfaces of the first gate electrode and first source and drain, wherein the plasma reaction film prevents silicide formation on the first MIS transistor.
摘要翻译：半导体器件包括非硅化物结构的第一MIS晶体管和硅化物结构的第二MIS晶体管，二者都形成在硅衬底上。第一MIS晶体管包括硅的第一栅电极，第一侧壁，第一源极和漏极以及在等离子体气氛中生长以覆盖第一栅电极和第一源极和漏极的顶表面的等离子体反应膜，其中等离子体反应膜防止在第一MIS晶体管上形成硅化物。

9. 发明申请

US20070209927A1 Magnetron Sputtering Device In which Two Modes Of Magnetic Flux Distribution (Balanced Mode/Unbalanced Mode) Can Be Switched From One To The Other And Vice Versa, A Film Formation Method For Forming A Film From An Inorganic Film Formation Material Using The Device, And A Dual Mode Magnetron Sputtering Device And Film Formation Method For Forming A Film From An Inorganic Film Formation Material At A Low Temperature Using The Device 审中-公开
标题翻译：其中磁流量分布（平衡模式/不平衡模式）的两种模式可以从一种到另一种和第二种方式切换的磁控管溅射装置，一种使用该装置的无机膜形成材料形成膜的成膜方法双模式磁控溅射装置和薄膜形成方法，用于使用该装置在低温下从无机薄膜形成材料形成薄膜
公开(公告)号：US20070209927A1
公开(公告)日：2007-09-13
申请号：US11631957
申请日：2005-07-07
申请人： Masayuki Kamei , Takamasa Ishigaki
发明人： Masayuki Kamei , Takamasa Ishigaki
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： C23C14/351 , B01J21/06 , B01J21/063 , B01J35/004 , B01J37/346 , B01J2219/00443 , B01J2219/00527 , B01J2219/00745 , B01J2219/00754 , C23C14/083 , C23C14/35 , C23C14/352 , H01J37/3405 , H01J37/3435 , H01J37/3461
摘要： The first object of this invention is to provide a magnetron sputtering device in which switching the magnetic field arrangement from the balanced mode to the unbalanced one and vice versa can be easily achieved. The second object is to provide a dual magnetron sputtering device which allows one to rapidly form a film from an inorganic film formation material over a wide temperature range from a low to high temperature. Provided is a magnetron sputtering device in which a sputtering cathode is arranged to produce a balanced distribution of magnetic fluxes and in which an article that exhibits ferromagnetism at room temperature is removably placed close to the surface of the sputtering cathode for holding a material target such that conversion of the balanced magnetic field arrangement into the unbalanced one can be easily achieved by removing the ferromagnetic article. Further provided is a dual magnetron sputtering device in which an angle formed between two lines one extending from the surface of material target of one magnetron and the other from the surface of opposite target of the other magnetron falls within a range of 160 to 20°, preferably 160 to 70°, so that an active focus of plasma can converge onto a substrate, to enable the rapid formation of a film there at a low temperature. The rapid and low temperature film formation is further enhanced by adjusting the two magnetrons so as to produce an unbalanced distribution of magnetic fluxes, and using a gas mixture comprising two or more rare gases as a sputtering gas.
摘要翻译：本发明的第一个目的是提供一种磁控溅射装置，其中磁场布置从平衡模式切换到不平衡模式，反之亦然。第二个目的是提供一种双磁控溅射装置，其允许在从低温到高温的宽温度范围内从无机成膜材料快速形成膜。提供了一种磁控溅射装置，其中溅射阴极布置成产生磁通量的平衡分布，其中在室温下显示出铁磁性的制品可移除地放置在靠近溅射阴极的表面以保持材料靶，使得通过去除铁磁制品可以容易地实现平衡磁场布置转换成不平衡磁场布置。还提供了一种双磁控溅射装置，其中从一个磁控管的材料靶的表面延伸的两条线和从另一个磁控管的相对靶的表面延伸的角度在160至20°的范围内形成的角度，优选为160〜70°，使得等离子体的活性聚焦会聚到基板上，以使得能够在低温下快速形成膜。通过调节两个磁控管以产生磁通量的不平衡分布，并且使用包含两种或更多种稀有气体的气体混合物作为溅射气体，进一步增强了快速和低温成膜。

10. 发明授权

US4786658A Fluorine-containing resin composition having low refractive index 失效
$Fluorine-containing resin composition having low refractive index$
标题翻译：具有低折射率的含氟树脂组合物
公开(公告)号：US4786658A
公开(公告)日：1988-11-22
申请号：US18398
申请日：1987-02-25
申请人： Yutaka Hashimoto , Masayuki Kamei , Toshihiko Umaba
发明人： Yutaka Hashimoto , Masayuki Kamei , Toshihiko Umaba
IPC分类号： C03C25/10 , C08F2/46 , C08F2/50 , C08F265/04 , C08F265/06 , C08F259/08
CPC分类号： C08F265/06 , C03C25/105 , C08F265/04
摘要： An active energy ray-curable resin composition which gives a cured product having a refractive index of not more than 1.44 comprises (I) a fluorine-containing polymer composed of (A) and at least one of (B) and (C): (A) a fluorine-containing (meth)acrylate, (B) an alpha,beta-ethylenically unsaturated dicarboxylic acid ester and (C) a mono(meth)acrylate and having a fluorine atom content of at least 30% by weight, (II) a fluorine-containing (meth)acrylate, (III) a mono(meth)acrylate and (IV) a polyfunctional monomer containing at least two (meth)acryloyl groups in the molecule. Optical fibers are produced by coating the above composition on a core material and irradiating active energy rays onto the coating to form a cured cladding of the composition.
摘要翻译：给出折射率不大于1.44的固化产物的活性能量射线固化树脂组合物包含（I）由（A）和（B）和（C）中的至少一种组成的含氟聚合物：（I） A）含氟（甲基）丙烯酸酯，（B）α，β-烯属不饱和二羧酸酯和（C）单（甲基）丙烯酸酯，其氟原子含量为至少30重量％）含氟（甲基）丙烯酸酯，（III）单（甲基）丙烯酸酯和（Ⅳ）分子中含有至少两个（甲基）丙烯酰基的多官能单体。通过将上述组合物涂覆在芯材上并将活性能量射线照射到涂层上以形成组合物的固化包层来生产光纤。

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