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1. 发明授权

US06917547B2 Non-volatile semiconductor memory device 有权
公开(公告)号：US06917547B2
公开(公告)日：2005-07-12
申请号：US10616955
申请日：2003-07-11
申请人： Motoki Kanamori , Kunihiro Katayama , Atsushi Shiraishi , Shigeo Kurakata , Atsushi Shikata
发明人： Motoki Kanamori , Kunihiro Katayama , Atsushi Shiraishi , Shigeo Kurakata , Atsushi Shikata
IPC分类号： G06F12/16 , G06F11/00 , G06F11/10 , G11C16/06 , G11C29/00 , G11C29/42 , G11C7/00
CPC分类号： G11C29/76 , G06F11/1068 , G11C16/04 , G11C16/3431 , G11C29/765 , G11C29/81 , G11C29/82 , G11C2029/0411
摘要： When a non-volatile memory write error occurs in a card storage device containing a non-volatile memory and an error correction circuit, write data is read from the non-volatile memory and a check is made if the error can be corrected by the error correction circuit. If the error can be corrected, the write operation is ended. If the error correction circuit cannot correct the error, substitute processing is performed to write data into some other area.

2. 发明授权

US07403436B2 Non-volatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US07403436B2
公开(公告)日：2008-07-22
申请号：US11453926
申请日：2006-06-16
申请人： Motoki Kanamori , Kunihiro Katayama , Atsushi Shiraishi , Shigeo Kurakata , Atsushi Shikata
发明人： Motoki Kanamori , Kunihiro Katayama , Atsushi Shiraishi , Shigeo Kurakata , Atsushi Shikata
IPC分类号： G11C7/00
CPC分类号： G11C29/76 , G06F11/1068 , G11C16/04 , G11C16/3431 , G11C29/765 , G11C29/81 , G11C29/82 , G11C2029/0411
摘要： When a non-volatile memory write error occurs in a card storage device containing a non-volatile memory and an error correction circuit, write data is read from the non-volatile memory and a check is made if the error can be corrected by the error correction circuit. If the error can be corrected, the write operation is ended. If the error correction circuit cannot correct the error, substitute processing is performed to write data into some other area.
摘要翻译：当在包含非易失性存储器和纠错电路的卡存储装置中发生非易失性存储器写入错误时，从非易失性存储器读取写入数据，并且检查错误是否可以通过错误来校正校正电路。如果可以纠正错误，则写入操作结束。如果纠错电路无法纠正错误，则执行替代处理以将数据写入其他区域。

3. 发明申请

US20060233032A1 Non-volatile semiconductor memory device 失效
公开(公告)号：US20060233032A1
公开(公告)日：2006-10-19
申请号：US11453926
申请日：2006-06-16
申请人： Motoki Kanamori , Kunihiro Katayama , Atsushi Shiraishi , Shigeo Kurakata , Atsushi Shikata
发明人： Motoki Kanamori , Kunihiro Katayama , Atsushi Shiraishi , Shigeo Kurakata , Atsushi Shikata
IPC分类号： G11C29/00 , G11C7/00
CPC分类号： G11C29/76 , G06F11/1068 , G11C16/04 , G11C16/3431 , G11C29/765 , G11C29/81 , G11C29/82 , G11C2029/0411
摘要： When a non-volatile memory write error occurs in a card storage device containing a non-volatile memory and an error correction circuit, write data is read from the non-volatile memory and a check is made if the error can be corrected by the error correction circuit. If the error can be corrected, the write operation is ended. If the error correction circuit cannot correct the error, substitute processing is performed to write data into some other area.

4. 发明申请

US20050246574A1 Non-volatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20050246574A1
公开(公告)日：2005-11-03
申请号：US11152101
申请日：2005-06-15
申请人： Motoki Kanamori , Kunihiro Katayama , Atsushi Shiraishi , Shigeo Kurakata , Atsushi Shikata
发明人： Motoki Kanamori , Kunihiro Katayama , Atsushi Shiraishi , Shigeo Kurakata , Atsushi Shikata
IPC分类号： G06F12/16 , G06F11/00 , G06F11/10 , G11C16/06 , G11C29/00 , G11C29/42
CPC分类号： G11C29/76 , G06F11/1068 , G11C16/04 , G11C16/3431 , G11C29/765 , G11C29/81 , G11C29/82 , G11C2029/0411
摘要： When a non-volatile memory write error occurs in a card storage device containing a non-volatile memory and an error correction circuit, write data is read from the non-volatile memory and a check is made if the error can be corrected by the error correction circuit. If the error can be corrected, the write operation is ended. If the error correction circuit cannot correct the error, substitute processing is performed to write data into some other area.
摘要翻译：当在包含非易失性存储器和纠错电路的卡存储装置中发生非易失性存储器写入错误时，从非易失性存储器读取写入数据，并且检查错误是否可以通过错误来校正校正电路。如果可以纠正错误，则写入操作结束。如果纠错电路无法纠正错误，则执行替代处理以将数据写入其他区域。

5. 发明授权

US07102943B2 Non-volatile semiconductor memory device 有权
公开(公告)号：US07102943B2
公开(公告)日：2006-09-05
申请号：US11152101
申请日：2005-06-15
申请人： Motoki Kanamori , Kunihiro Katayama , Atsushi Shiraishi , Shigeo Kurakata , Atsushi Shikata
发明人： Motoki Kanamori , Kunihiro Katayama , Atsushi Shiraishi , Shigeo Kurakata , Atsushi Shikata
IPC分类号： G11C7/00
CPC分类号： G11C29/76 , G06F11/1068 , G11C16/04 , G11C16/3431 , G11C29/765 , G11C29/81 , G11C29/82 , G11C2029/0411
摘要： When a non-volatile memory write error occurs in a card storage device containing a non-volatile memory and an error correction circuit, write data is read from the non-volatile memory and a check is made if the error can be corrected by the error correction circuit. If the error can be corrected, the write operation is ended. If the error correction circuit cannot correct the error, substitute processing is performed to write data into some other area.

6. 发明授权

US06608784B2 Non-volatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US06608784B2
公开(公告)日：2003-08-19
申请号：US10078471
申请日：2002-02-21
申请人： Motoki Kanamori , Kunihiro Katayama , Atsushi Shiraishi , Shigeo Kurakata , Atsushi Shikata
发明人： Motoki Kanamori , Kunihiro Katayama , Atsushi Shiraishi , Shigeo Kurakata , Atsushi Shikata
IPC分类号： G11C1606
CPC分类号： G11C29/76 , G06F11/1068 , G11C16/04 , G11C16/3431 , G11C29/765 , G11C29/81 , G11C29/82 , G11C2029/0411
摘要： When a non-volatile memory write error occurs in a card storage device containing a non-volatile memory and an error correction circuit, write data is read from the non-volatile memory and a check is made if the error can be corrected by the error correction circuit. If the error can be corrected, the write operation is ended. If the error correction circuit cannot correct the error, substitute processing is performed to write data into some other area.
摘要翻译：当在包含非易失性存储器和纠错电路的卡存储装置中发生非易失性存储器写入错误时，从非易失性存储器读取写入数据，并且检查错误是否可以通过错误来校正校正电路。如果可以纠正错误，则写入操作结束。如果纠错电路无法纠正错误，则执行替代处理以将数据写入其他区域。

7. 发明授权

US08051331B2 Memory card and its initial setting method 有权
标题翻译：存储卡及其初始设定方法
公开(公告)号：US08051331B2
公开(公告)日：2011-11-01
申请号：US12412117
申请日：2009-03-26
申请人： Hidefumi Oodate , Atsushi Shiraishi , Shigeo Kurakata , Kunihiro Katayama , Motoki Kanamori
发明人： Hidefumi Oodate , Atsushi Shiraishi , Shigeo Kurakata , Kunihiro Katayama , Motoki Kanamori
IPC分类号： G06F11/00
CPC分类号： G11C16/20
摘要： In the initial setting of a memory card 1, the flash check data FD stored in a flash memory 2 is read out, this data FD is compared with the operation check data FD11 stored previously in the ROM, the write check data FD12 stored in the ROM 4a is written, if a fault is not detected, to the flash memory 2, and this data is read again and is compared with the write check data. FD12 of the ROM 4a. When any fault is not detected in comparison of these data, the CPU determines that the flash memory 2 is normal. Moreover, if a fault is detected in the comparison of data, the CPU sets the reset process fault data to a register 5a to set a controller 3 to the sleep mode. When the command CMD is received during this period, data comparison is executed again.
摘要翻译：在存储卡1的初始设置中，读出存储在闪速存储器2中的闪存检查数据FD，将该数据FD与先前存储在ROM中的操作检查数据FD11进行比较，存储在存储卡1中的写入检查数据FD12 如果没有检测到故障，ROM 4a被写入闪速存储器2，并且该数据被再次读取并且与写检查数据进行比较。 ROM 4a的FD12。当比较这些数据时没有检测到任何故障时，CPU确定闪存2正常。此外，如果在比较数据中检测到故障，则CPU将复位处理故障数据设置为寄存器5a，以将控制器3设置为睡眠模式。当在此期间接收到命令CMD时，再次执行数据比较。

8. 发明授权

US07549086B2 Memory card and its initial setting method 有权
标题翻译：存储卡及其初始设定方法
公开(公告)号：US07549086B2
公开(公告)日：2009-06-16
申请号：US11877500
申请日：2007-10-23
申请人： Hidefumi Oodate , Atsushi Shiraishi , Shigeo Kurakata , Kunihiro Katayama , Motoki Kanamori
发明人： Hidefumi Oodate , Atsushi Shiraishi , Shigeo Kurakata , Kunihiro Katayama , Motoki Kanamori
IPC分类号： G06F11/00
CPC分类号： G11C16/20
摘要： In the initial setting of a memory card 1, the flash check data FD stored in a flash memory 2 is read out, this data FD is compared with the operation check data FD11 stored previously in the ROM, the write check data FD12 stored in the ROM 4a is written, if a fault is not detected, to the flash memory 2, and this data is read again and is compared with the write check data. FD12 of the ROM 4a. When any fault is not detected in comparison of these data, the CPU determines that the flash memory 2 is normal. Moreover, if a fault is detected in the comparison of data, the CPU sets the reset process fault data to a register 5a to set a controller 3 to the sleep mode. When the command CMD is received during this period, data comparison is executed again.
摘要翻译：在存储卡1的初始设置中，读出存储在闪速存储器2中的闪存检查数据FD，将该数据FD与先前存储在ROM中的操作检查数据FD11进行比较，存储在存储卡1中的写入检查数据FD12 如果没有检测到故障，ROM 4a被写入闪速存储器2，并且该数据被再次读取并且与写检查数据进行比较。 ROM 4a的FD12。当比较这些数据时没有检测到任何故障时，CPU确定闪存2正常。此外，如果在比较数据中检测到故障，则CPU将复位处理故障数据设置为寄存器5a，以将控制器3设置为睡眠模式。当在此期间接收到命令CMD时，再次执行数据比较。

9. 发明授权

US07305589B2 Memory card and its initial setting method 有权
标题翻译：存储卡及其初始设定方法
公开(公告)号：US07305589B2
公开(公告)日：2007-12-04
申请号：US10484043
申请日：2002-05-08
申请人： Hidefumi Oodate , Atsushi Shiraishi , Shigeo Kurakata , Kunihiro Katayama , Motoki Kanamori
发明人： Hidefumi Oodate , Atsushi Shiraishi , Shigeo Kurakata , Kunihiro Katayama , Motoki Kanamori
IPC分类号： G06F11/00
CPC分类号： G11C16/20
摘要： In the initial setting of a memory card 1, the flash check data FD stored in a flash memory 2 is read out, this data FD is compared with the operation check data FD11 stored previously in the ROM, the write check data FD12 stored in the ROM 4a is written, if a fault is not detected, to the flash memory 2, and this data is read again and is compared with the write check data FD12 of the ROM 4a. When any fault is not detected in comparison of these data, the CPU determines that the flash memory 2 is normal. Moreover, if a fault is detected in the comparison of data, the CPU sets the reset process fault data to a register 5a to set a controller 3 to the sleep mode. When the command CMD is received during this period, data comparison is executed again.
摘要翻译：在存储卡1的初始设置中，读出存储在闪速存储器2中的闪存检查数据FD，该数据FD与先前存储在ROM中的操作检查数据FD1＆lt; 1＆gt; 存储在ROM4a中的写入检查数据FD1＆lt; 2＆gt;如果没有检测到故障则被写入闪速存储器2，并且再次读取该数据并与写入检查进行比较 ROM4a的数据FD1 <2> 。当比较这些数据时没有检测到任何故障时，CPU确定闪存2正常。此外，如果在数据比较中检测到故障，则CPU将复位过程故障数据设置为寄存器5a以将控制器3设置为睡眠模式。当在此期间接收到命令CMD时，再次执行数据比较。

10. 发明申请

US20090187703A1 MEMORY CARD AND ITS INITIAL SETTING METHOD 有权
标题翻译：记忆卡及其初始设置方法
公开(公告)号：US20090187703A1
公开(公告)日：2009-07-23
申请号：US12412117
申请日：2009-03-26
申请人： HIDEFUMI OODATE , Atsushi Shiraishi , Shigeo Kurakata , Kunihiro Katayama , Motoki Kanamori
发明人： HIDEFUMI OODATE , Atsushi Shiraishi , Shigeo Kurakata , Kunihiro Katayama , Motoki Kanamori
IPC分类号： G06F12/02 , G06F12/00 , G11C5/14
CPC分类号： G11C16/20
摘要： In the initial setting of a memory card 1, the flash check data FD stored in a flash memory 2 is read out, this data FD is compared with the operation check data FD11 stored previously in the ROM, the write check data FD12 stored in the ROM 4a is written, if a fault is not detected, to the flash memory 2, and this data is read again and is compared with the write check data. FD12 of the ROM 4a. When any fault is not detected in comparison of these data, the CPU determines that the flash memory 2 is normal. Moreover, if a fault is detected in the comparison of data, the CPU sets the reset process fault data to a register 5a to set a controller 3 to the sleep mode. When the command CMD is received during this period, data comparison is executed again.
摘要翻译：在存储卡1的初始设置中，读出存储在闪速存储器2中的闪存检查数据FD，将该数据FD与先前存储在ROM中的操作检查数据FD11进行比较，存储在存储卡1中的写入检查数据FD12 如果没有检测到故障，ROM 4a被写入闪速存储器2，并且该数据被再次读取并且与写检查数据进行比较。 ROM 4a的FD12。当比较这些数据时没有检测到任何故障时，CPU确定闪存2正常。此外，如果在比较数据中检测到故障，则CPU将复位处理故障数据设置为寄存器5a，以将控制器3设置为睡眠模式。当在此期间接收到命令CMD时，再次执行数据比较。

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