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1. 发明授权

US07687598B2 Dendrimer and electronic device element employing the same 失效
标题翻译：树枝状聚合物和使用其的电子器件元件
公开(公告)号：US07687598B2
公开(公告)日：2010-03-30
申请号：US10521846
申请日：2003-07-14
申请人： Motohiro Yamahara , Satoru Obara , Kentaro Tada
发明人： Motohiro Yamahara , Satoru Obara , Kentaro Tada
IPC分类号： C08G75/00 , C08G61/12 , C08G83/00 , B05D5/12 , B32B27/00 , H01B1/12 , H01L51/05 , H01L51/50
CPC分类号： C08G83/003 , H01B1/122 , H01L51/0061 , H01L51/0068 , H01L51/0095 , H01L51/0508 , H01L51/4253 , H01L51/5048 , Y10T428/31504
摘要： An object of the invention is to provide a novel dendrimer serving as an organic semiconductor material which is isotropic and which exhibits remarkably high carrier conductivity. Another object of the invention is to provide an electronic device employing the dendrimer. These objects are attained by a dendrimer having a branching structure in which repeating units each having a branch portion are repeatedly linked through the divergent method or the convergent method, each of said repeating units having a structure represented by formula (1), and containing a linear portion X formed of an optionally substituted divalent organic group and a branch portion Y formed of an optionally substituted trivalent organic group: characterized in that the linear portion X contains at least one thienylene moiety and is at least partially conjugated with the branch portion Y.
摘要翻译：本发明的目的是提供一种用作有机半导体材料的新颖的树枝状聚合物，其具有各向同性并且具有显着高的载流子导电性。本发明的另一个目的是提供一种采用树状聚合物的电子装置。这些目的通过具有支化结构的树枝状聚合物来实现，其中每个具有分支部分的重复单元通过发散方法或收敛方法重复连接，每个所述重复单元具有由式（1）表示的结构，并且含有由任选取代的二价有机基团形成的线性部分X和由任选取代的三价有机基团形成的分支部分Y，其特征在于线性部分X含有至少一个亚噻吩基部分并且至少部分地与分支部分共轭Y.

2. 发明申请

US20060102890A1 Dendrimer and electronic device element employing the same 失效
标题翻译：树枝状聚合物和使用其的电子器件元件
公开(公告)号：US20060102890A1
公开(公告)日：2006-05-18
申请号：US10521846
申请日：2003-07-14
申请人： Motohiro Yamahara , Satoru Obara , Kentaro Tada
发明人： Motohiro Yamahara , Satoru Obara , Kentaro Tada
IPC分类号： H01L51/00 , H01B1/12
CPC分类号： C08G83/003 , H01B1/122 , H01L51/0061 , H01L51/0068 , H01L51/0095 , H01L51/0508 , H01L51/4253 , H01L51/5048 , Y10T428/31504
摘要： An object of the invention is to provide a novel dendrimer serving as an organic semiconductor material which is isotropic and which exhibits remarkably high carrier conductivity. Another object of the invention is to provide an electronic device employing the dendrimer. These objects are attained by a dendrimer having a branching structure in which repeating units each having a branch portion are repeatedly linked through the divergent method or the convergent method, each of said repeating units having a structure represented by formula (1), and containing a linear portion X formed of an optionally substituted divalent organic group and a branch portion Y formed of an optionally substituted trivalent organic group: characterized in that the linear portion X contains at least one thienylene moiety and is at least partially conjugated with the branch portion Y.
摘要翻译：本发明的目的是提供一种用作有机半导体材料的新颖的树枝状聚合物，其具有各向同性并且具有显着高的载流子导电性。本发明的另一个目的是提供一种采用树状聚合物的电子装置。这些目的通过具有支化结构的树枝状聚合物来实现，其中每个具有分支部分的重复单元通过发散方法或收敛方法重复连接，每个所述重复单元具有由式（1）表示的结构，并且含有由任选取代的二价有机基团形成的线性部分X和由任选取代的三价有机基团形成的分支部分Y，其特征在于线性部分X含有至少一个亚噻吩基部分并且至少部分地与分支部分共轭Y.

3. 发明申请

US20060009614A1 Dendritic polymer and electronic device element employing the polymer 失效
公开(公告)号：US20060009614A1
公开(公告)日：2006-01-12
申请号：US10521843
申请日：2003-07-14
申请人： Motohiro Yamahara , Satoru Obara , Kentaro Tada
发明人： Motohiro Yamahara , Satoru Obara , Kentaro Tada
IPC分类号： C08G75/00 , B05D5/12 , B32B27/00
CPC分类号： C08G83/003 , H01B1/122 , H01L51/0061 , H01L51/0068 , H01L51/0095 , H01L51/0508 , H01L51/4253 , H01L51/5048 , Y10T428/31504
摘要： An object of the invention is to provide a novel dendritic polymer serving as an organic semiconductor material which is isotropic and which exhibits remarkably high carrier conductivity. Another object of the invention is to provide an electronic device employing the dendritic polymer. These objects are attained by a dendritic polymer having a branching structure including repeating units each having a branch portion, each of said repeating units having a structure represented by formula (1), and containing a linear portion X formed of an optionally substituted divalent organic group and a branch portion Y formed of an optionally substituted trivalent organic group: characterized in that the linear portion X contains at least one thienylene moiety and is at least partially conjugated with the branch portion Y, and in that the polymer reversibly assumes an insulative state and a metallic state, depending on the presence of an external factor.

4. 发明授权

US07531619B2 Process for producing dendrimer, building block compound, and process for producing thiophene compound 失效
标题翻译：树枝状大分子，结构单元化合物的制造方法，以及噻吩化合物的制造方法
公开(公告)号：US07531619B2
公开(公告)日：2009-05-12
申请号：US10521689
申请日：2003-07-14
申请人： Satoru Obara , Kentaro Tada
发明人： Satoru Obara , Kentaro Tada
IPC分类号： C08G75/06 , C08G75/00 , C08G61/00 , C08G61/12
CPC分类号： C08G83/003 , C07D333/18 , C08G61/126
摘要： A method for producing a dendrimer having a structural repeating unit which is represented by formula (1) and which contains a linear portion including a thienylene moiety and a branch portion Y formed of an optionally substituted trivalent organic group. The method is based on the convergent method and includes reaction step 1 of converting α-position hydrogen of the thiophene ring of a thienylene-moiety-containing compound (a) for forming end moieties to an active group V1 which undergoes Suzuki cross-coupling reaction, to thereby form compound (b); reaction step 2 of subjecting a compound (c) to Suzuki cross-coupling reaction with the compound (b), to thereby yield compound (d), the compound (c) having a linear portion and a branch portion Y and having, at the branch portion Y, two active groups V2 which undergo Suzuki cross-coupling reaction with the active group V1; reaction step 3 of converting α-position hydrogen of the thiophene ring of the thus-formed compound to an active group V1 which undergoes Suzuki cross-coupling reaction, and reacting the compound (c) with the active group V1, to thereby form a dendron of a subsequent generation; and a step of repeating the reaction step 3 in accordance with needs, to thereby form a dendrimer.
摘要翻译：一种制备具有由式（1）表示的结构重复单元并含有包含由任意取代的三价有机基团形成的亚噻吩基部分和分支部分Y的直链部分的树枝状聚合物的方法。该方法基于收敛方法，包括将形成末端部分的含噻吩烯部分的化合物（a）的噻吩环的α-位氢转化为进行Suzuki交叉偶联反应的活性基团V1的反应步骤1 ，从而形成化合物（b）; 使化合物（c）与化合物（b）进行Suzuki交叉偶联反应的反应步骤2，得到化合物（d），具有直链状部分和分支部分Y的化合物（c）分支部分Y，与活性基团V1进行Suzuki交叉偶联反应的两个活性基团V2; 将由此形成的化合物的噻吩环的α-位氢转化为进行Suzuki交叉偶联反应的活性基团V1，并使化合物（c）与活性基团V1反应从而形成树突状物的反应步骤3 的后代以及根据需要重复反应步骤3的步骤，从而形成树枝状聚合物。

5. 发明申请

US20060122364A1 Process for producing dendrimer, building block compound, and process for producing thiophene compound 失效
标题翻译：树枝状大分子，结构单元化合物的制造方法，以及噻吩化合物的制造方法
公开(公告)号：US20060122364A1
公开(公告)日：2006-06-08
申请号：US10521689
申请日：2003-07-14
申请人： Satoru Obara , Kentaro Tada
发明人： Satoru Obara , Kentaro Tada
IPC分类号： C08G75/32 , C07D409/14
CPC分类号： C08G83/003 , C07D333/18 , C08G61/126
摘要： A method for producing a dendrimer having a structural repeating unit which is represented by formula (1) and which contains a linear portion including a thienylene moiety and a branch portion Y formed of an optionally substituted trivalent organic group. The method is based on the convergent method and includes reaction step 1 of converting α-position hydrogen of the thiophene ring of a thienylene-moiety-containing compound (a) for forming end moieties to an active group V1 which undergoes Suzuki cross-coupling reaction, to thereby form compound (b); reaction step 2 of subjecting a compound (c) to Suzuki cross-coupling reaction with the compound (b), to thereby yield compound (d), the compound (c) having a linear portion and a branch portion Y and having, at the branch portion Y, two active groups V2 which undergo Suzuki cross-coupling reaction with the active group V1; reaction step 3 of converting α-position hydrogen of the thiophene ring of the thus-formed compound to an active group V1 which undergoes Suzuki cross-coupling reaction, and reacting the compound (c) with the active group V1, to thereby form a dendron of a subsequent generation; and a step of repeating the reaction step 3 in accordance with needs, to thereby form a dendrimer.
摘要翻译：一种制备具有由式（1）表示的结构重复单元并含有包含由任意取代的三价有机基团形成的亚噻吩基部分和分支部分Y的直链部分的树枝状聚合物的方法。该方法基于收敛方法，包括将形成末端部分的含噻吩烯部分的化合物（a）的噻吩环的α-位氢转化成活性基团V 1的反应步骤1 进行Suzuki交叉偶联反应，从而形成化合物（b）; 使化合物（c）与化合物（b）进行Suzuki交叉偶联反应的反应步骤2，得到化合物（d），具有直链状部分和分支部分Y的化合物（c）分支部分Y，与活性基团V 1进行Suzuki交叉偶联反应的两个活性基团V 2 2; 将由此形成的化合物的噻吩环的α-位氢转化成活性基团V 1的反应步骤3进行Suzuki交叉偶联反应，并使化合物（c）与活性组V 1，从而形成下一代的树突; 以及根据需要重复反应步骤3的步骤，从而形成树枝状聚合物。

6. 发明授权

US07585933B2 Dendritic polymer and electronic device element employing the polymer 失效
标题翻译：树枝状聚合物和采用该聚合物的电子器件元件
公开(公告)号：US07585933B2
公开(公告)日：2009-09-08
申请号：US10521843
申请日：2003-07-14
申请人： Yamahara Motohiro , Satoru Obara , Kentaro Tada
发明人： Yamahara Motohiro , Satoru Obara , Kentaro Tada
IPC分类号： C08G75/00 , C08G61/12 , C08G83/00 , B05D5/12 , B32B27/00 , H01B1/12 , H01L51/05 , H01L51/50
CPC分类号： C08G83/003 , H01B1/122 , H01L51/0061 , H01L51/0068 , H01L51/0095 , H01L51/0508 , H01L51/4253 , H01L51/5048 , Y10T428/31504
摘要： An object of the invention is to provide a novel dendritic polymer serving as an organic semiconductor material which is isotropic and which exhibits remarkably high carrier conductivity. Another object of the invention is to provide an electronic device employing the dendritic polymer. These objects are attained by a dendritic polymer having a branching structure including repeating units each having a branch portion, each of said repeating units having a structure represented by formula (1), and containing a linear portion X formed of an optionally substituted divalent organic group and a branch portion Y formed of an optionally substituted trivalent organic group: characterized in that the linear portion X contains at least one thienylene moiety and is at least partially conjugated with the branch portion Y, and in that the polymer reversibly assumes an insulative state and a metallic state, depending on the presence of an external factor.
摘要翻译：本发明的目的是提供一种用作有机半导体材料的新型树枝状聚合物，其是各向同性的并且具有显着的高载流子导电性。本发明的另一个目的是提供一种使用树枝状聚合物的电子装置。这些目的是通过具有支链结构的树枝状聚合物来实现的，所述树枝状聚合物包括各自具有分支部分的重复单元，每个所述重复单元具有由式（1）表示的结构，并且含有由任选取代的二价有机基团形成的直链部分X 以及由任选取代的三价有机基团形成的分支部分Y，其特征在于，线性部分X含有至少一个亚噻吩基部分并且至少部分地与分支部分Y共轭，并且聚合物可逆地呈现绝缘状态，金属状态，取决于外部因素的存在。

7. 发明申请

US20060189160A1 Method for producing a pattern formation mold 审中-公开
公开(公告)号：US20060189160A1
公开(公告)日：2006-08-24
申请号：US10526384
申请日：2003-08-29
申请人： Tadashi Hattori , Yuichi Utsumi , Nobuji Sakai , Kentaro Tada
发明人： Tadashi Hattori , Yuichi Utsumi , Nobuji Sakai , Kentaro Tada
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： B81C99/009 , C08G59/32 , C08G59/3218 , G03F7/0017 , G03F7/038
摘要： The method for producing a pattern formation mold includes: a first step of applying to a substrate a radiation-sensitive negative-type resist composition containing an epoxy resin represented by formula (I): (wherein R1 represents a moiety derived from an organic compound having k active hydrogen atoms (k represents an integer of 1 to 100); each of n1, n2, through nk represents 0 or an integer of 1 to 100; the sum of n1, n2, through nk falls within a range of 1 to 100; and each of “A” s, which may be identical to or different from each other, represents an oxycyclohexane skeleton represented by formula (II): (wherein X represents any of groups represented by formulas (III) to (V): and at least two groups represented by formula (III) are contained in one molecule of the epoxy resin)), along with a radiation-sensitive cationic polymerization initiator, and a solvent for dissolving the epoxy resin therein; a second step of drying the substrate coated with the radiation-sensitive negative-type resist composition, to thereby form a resist film; a third step of selectively exposing the formed resist film to an active energy beam according to a desired pattern; a fourth step of heating the exposed resist film so as to enhance a contrast of a pattern to be formed; a fifth step of developing the heated resist film, to thereby remove the unexposed area of the resist film through dissolution, thereby forming a patterned layer; and a sixth step of applying to the patterned layer a material other than that of the patterned layer such that spaces present in the patterned layer are filled, at least to some height, with the material, to thereby form a second layer, and removing the second layer, to thereby yield a pattern formation mold.

8. 发明申请

US20060018306A1 IP telephone system, IP telephone apparatus and communications method 有权
标题翻译： IP电话系统，IP电话机和通信方式
公开(公告)号：US20060018306A1
公开(公告)日：2006-01-26
申请号：US11183966
申请日：2005-07-19
申请人： Toshiko Nishida , Kazuto Kobayashi , Akira Miyajima , Kentaro Tada , Kiyoshi Toyoda
发明人： Toshiko Nishida , Kazuto Kobayashi , Akira Miyajima , Kentaro Tada , Kiyoshi Toyoda
IPC分类号： H04L12/66 , H03G7/00
CPC分类号： H04M1/6016 , H04M1/2535 , H04M3/40 , H04M3/4211 , H04M7/006
摘要： An IP telephone system includes an IP telephone apparatus, a Web server and an ENUM server. The IP telephone apparatus is connected to an IP network. The Web server registers talk volume information corresponding to a telephone number assigned to the IP telephone apparatus. The ENUM server registers a NAPTR resource record in which a URI specifies link data related to the talk volume information registered in the Web server. In the IP telephone system, the IP telephone apparatus that has received a call transmits, to the ENUM server, a query for a NAPTR record corresponding to a targeted recipient phone number. The IP telephone apparatus then transmits, to the Web server, a request for the talk volume information corresponding to the targeted recipient phone number according to the returned NAPTR resource record, and adjusts the talk volume according to the returned talk volume information.
摘要翻译： IP电话系统包括IP电话设备，Web服务器和ENUM服务器。 IP电话设备连接到IP网络。 Web服务器登记与分配给IP电话设备的电话号码对应的通话音量信息。 ENUM服务器注册NAPTR资源记录，其中URI指定与在Web服务器中注册的通话量信息相关的链接数据。在IP电话系统中，已经接收到呼叫的IP电话设备向ENUM服务器发送对应于目标接收方电话号码的NAPTR记录的查询。然后，IP电话设备根据返回的NAPTR资源记录向Web服务器发送对应于目标接收方电话号码的通话量信息的请求，并根据返回的通话音量信息调整通话音量。

9. 发明授权

US08519504B2 Electrode for semiconductor chip and semiconductor chip with the electrode 有权
公开(公告)号：US08519504B2
公开(公告)日：2013-08-27
申请号：US12453238
申请日：2009-05-04
申请人： Kentaro Tada
发明人： Kentaro Tada
IPC分类号： H01L31/06
CPC分类号： H01L29/452 , H01L29/20 , H01L29/2003
摘要： In an n-type semiconductor layer that contains gallium (Ga), contact resistance is to be suppressed at a low level. An n-side electrode is provided on a surface of the n-type semiconductor layer containing Ga. The electrode includes a metal layer having a Ga content of equal to or more than 1 at % and equal to or less than 25 at %. The metal layer is disposed in contact with the n-type semiconductor layer.

10. 发明授权

US08228966B2 Semiconductor laser and method of manufacturing semiconductor laser 有权
标题翻译：半导体激光器及制造半导体激光器的方法
公开(公告)号：US08228966B2
公开(公告)日：2012-07-24
申请号：US12710607
申请日：2010-02-23
申请人： Kentaro Tada , Kenji Endo , Kazuo Fukagai , Tetsuro Okuda , Masahide Kobayashi
发明人： Kentaro Tada , Kenji Endo , Kazuo Fukagai , Tetsuro Okuda , Masahide Kobayashi
IPC分类号： H01S5/00
CPC分类号： H01S5/164 , B82Y20/00 , H01S5/1039 , H01S5/162 , H01S5/168 , H01S5/22 , H01S5/34313 , H01S5/34326
摘要： Provided is a semiconductor laser, wherein (λa−λw)>15 (nm) and Lt
摘要翻译：提供了一种半导体激光器，其中（λa-λw）> 15（nm）和Lt <25（μm），其中λw是对应于设置在距离2内的位置的有源层的带隙的光的波长 μm，λa是与位于距离等于或大于（3/10）L的位置处的有源层的带隙对应的光的波长，并且<（7 / 10）L，谐振器长度为“L”，“Lt”为有源层的位置与光波长对应的带隙之间的过渡区域的长度的λw+ 2（nm）的波长的有源层的位置以及在谐振器方向上具有对应于λa-2（nm）的光波长的带隙的有源层的位置。

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