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    • 1. 发明授权
    • Ion generation apparatus and thin film forming apparatus and ion source
utilizing the ion generation apparatus
    • 离子发生装置和利用离子发生装置的薄膜形成装置和离子源
    • US5022977A
    • 1991-06-11
    • US198500
    • 1988-05-25
    • Morito MatsuokaKen-ichi Ono
    • Morito MatsuokaKen-ichi Ono
    • H01J27/18H01J37/32
    • H01J37/32623H01J27/18H01J37/32192H01J37/32357H01J37/3266H01J37/32678H01J2237/081
    • An ion generation apparatus utilizes microwaves and employs the electron cyclotron resonance phenomenon to generate plasma. The plasma is confined in a plasma generation chamber by a mirror field, whereby high density plasma is obtained. A target disposed within the plasma generation chamber is sputtered by the ions in the high density plasma, so that a large number of ions is produced. This ion generation apparatus can be employed in a thin film forming apparatus which forms a thin film on the surface of a substrate by directing the ions and neutral particles to the substrate. An ion extracting grid may be included. Permanent magnets may be disposed at the upper and lower ends of the target disposed in the plasma generation chamber so as to permit the leakage of magnetic flux to the inner surface of the target. This permits the film to be formed at a high rate even when the voltage applied to the target is relatively low.
    • PCT No.PCT / JP87 / 00695 Sec。 371日期:1988年5月25日 102(e)日期1988年5月25日PCT提交1987年9月24日PCT公布。 出版物WO88 / 02546 日期:1988年4月7日。离子产生装置利用微波并采用电子回旋共振现象产生等离子体。 等离子体通过镜面场限制在等离子体产生室中,从而获得高密度等离子体。 设置在等离子体发生室内的靶被高密度等离子体中的离子溅射,从而产生大量的离子。 该离子产生装置可以用于通过将离子和中性粒子引导到基底而在基底表面上形成薄膜的薄膜形成装置中。 可以包括离子提取网格。 永磁体可以设置在设置在等离子体产生室中的靶的上端和下端,以允许磁通量泄漏到靶的内表面。 这使得即使当施加到目标的电压相对较低时也能以高速率形成膜。
    • 5. 发明授权
    • Thin film forming apparatus
    • 薄膜成型装置
    • US4874497A
    • 1989-10-17
    • US210511
    • 1988-06-08
    • Morito MatsuokaKen'ichi Ono
    • Morito MatsuokaKen'ichi Ono
    • H01L21/31C23C14/34C23C14/35H01J37/32H01L21/203H01L21/285H05H1/46
    • H01J37/32623C23C14/352C23C14/357H01J37/32357H01J37/3266H01J37/32678
    • Plasma is generated by electron cyclotron resonance utilizing microwave energy and is confined within a plasma generation chamber by a mirror magnetic field, whereby high density plasma is obtained. Targets are disposed within the plasma generation chamber in the direction perpendicular to the magnetic flux and sputtered by the ions in the high density plasma, whereby a large amount of ions are sputtered and neutral particles produced. The ions and neutral particles are extracted in the direction perpendicular to the magnetic flux and deposited over the surface of a substrate so that it is possible to form a thin film at a high deposition rate without the bombardment of high-energy particles upon the substrate. Furthermore, the ions and neutral particles can be extracted through a slit-like opening formed through the cylindrical wall of the plasma generation chamber, so that a thin film is continuously formed on the surface of a tape-like substrate.
    • PCT No.PCT / JP87 / 00759 Sec。 371日期:1988年6月8日 102(e)日期1988年6月8日PCT提交1987年10月8日PCT公布。 出版物WO88 / 02791 日期:1988年04月21日。通过使用微波能量的电子回旋共振产生波片,并通过镜面磁场限制在等离子体发生室内,由此获得高密度等离子体。 目标在垂直于磁通的方向设置在等离子体发生室内,并由高密度等离子体中的离子溅射,由此大量的离子被溅射并产生中性粒子。 离子和中性粒子在与磁通垂直的方向上被提取并沉积在基片的表面上,使得可以以高沉积速率形成薄膜而不会在基底上轰击高能粒子。 此外,离子和中性粒子可以通过通过等离子体产生室的圆筒壁形成的狭缝状开口被提取,从而在带状基底的表面上连续地形成薄膜。