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1. 发明申请

US20150061088A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150061088A1
公开(公告)日：2015-03-05
申请号：US14207880
申请日：2014-03-13
申请人： Dong-soo LEE , Myoung-Jae LEE , Seong-ho CHO , Mohammad Rakib Uddin , David SEO , Moon-seung YANG , Sang-moon LEE , Sung-hun LEE , Ji-hyun HUR , Eui-chul HWANG
发明人： Dong-soo LEE , Myoung-Jae LEE , Seong-ho CHO , Mohammad Rakib Uddin , David SEO , Moon-seung YANG , Sang-moon LEE , Sung-hun LEE , Ji-hyun HUR , Eui-chul HWANG
IPC分类号： H01L29/20 , H01L21/322
CPC分类号： H01L29/34 , H01L21/02175 , H01L21/02189 , H01L21/02192 , H01L21/022 , H01L21/02304 , H01L21/28158 , H01L21/28264 , H01L21/322 , H01L21/3228 , H01L29/20 , H01L29/2003 , H01L29/24 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66522 , H01L29/7851
摘要： The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.
摘要翻译：本公开内容涉及包括III-V族化合物半导体层和电介质层之间的吸氧层的半导体器件以及制造该半导体器件的方法。半导体器件可以包括化合物半导体层; 设置在所述化合物半导体层上的电介质层; 以及置于化合物半导体层和电介质层之间的吸氧层。吸氧层包括具有比化合物半导体层的材料更高的氧亲合力的材料。

2. 发明申请

US20150069517A1 COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：补充金属氧化物半导体器件及其制造方法
公开(公告)号：US20150069517A1
公开(公告)日：2015-03-12
申请号：US14259569
申请日：2014-04-23
申请人： Moon-seung YANG , Mohammad Rakib UDDIN , Myoung-jae LEE , Sang-moon LEE , Sung-hun LEE , Seong-ho CHO
发明人： Moon-seung YANG , Mohammad Rakib UDDIN , Myoung-jae LEE , Sang-moon LEE , Sung-hun LEE , Seong-ho CHO
IPC分类号： H01L21/8238 , H01L27/092
CPC分类号： H01L21/8238 , H01L21/8252 , H01L21/8258 , H01L27/0605 , H01L27/092
摘要： Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. In the CMOS device, a buffer layer is disposed on a silicon substrate, and a first layer including a group III-V material is disposed on the buffer layer. A second layer including a group IV material is disposed on the buffer layer or the silicon substrate while being spaced apart from the first layer.
摘要翻译：提供互补金属氧化物半导体（CMOS）器件及其制造方法。在CMOS器件中，在硅衬底上设置缓冲层，并且在缓冲层上设置包括III-V族材料的第一层。包含IV族材料的第二层设置在缓冲层或硅衬底上，同时与第一层间隔开。

3. 发明申请

US20160172450A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20160172450A1
公开(公告)日：2016-06-16
申请号：US15050867
申请日：2016-02-23
申请人： Dong-soo LEE , Myoung-jae LEE , Seong-ho CHO , Mohammad Rakib UDDIN , David SEO , Moon-seung YANG , Sang-moon LEE , Sung-hun LEE , Ji-hyun HUR , Eui-chul HWANG
发明人： Dong-soo LEE , Myoung-jae LEE , Seong-ho CHO , Mohammad Rakib UDDIN , David SEO , Moon-seung YANG , Sang-moon LEE , Sung-hun LEE , Ji-hyun HUR , Eui-chul HWANG
IPC分类号： H01L29/34 , H01L21/322
CPC分类号： H01L29/34 , H01L21/02175 , H01L21/02189 , H01L21/02192 , H01L21/022 , H01L21/02304 , H01L21/28158 , H01L21/28264 , H01L21/322 , H01L21/3228 , H01L29/20 , H01L29/2003 , H01L29/24 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66522 , H01L29/7851
摘要： The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.

4. 发明申请

US20150115321A1 SUBSTRATE STRUCTURE, COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE 有权
标题翻译：基板结构，补充金属氧化物半导体器件及其制造补充金属氧化物半导体器件的方法
公开(公告)号：US20150115321A1
公开(公告)日：2015-04-30
申请号：US14510354
申请日：2014-10-09
申请人： Moon-seung YANG , Rakib Uddin MOHAMMAD , Myoung-jae LEE , Sang-moon LEE , Sung-hun LEE , Seong-ho CHO
发明人： Moon-seung YANG , Rakib Uddin MOHAMMAD , Myoung-jae LEE , Sang-moon LEE , Sung-hun LEE , Seong-ho CHO
IPC分类号： H01L21/8238 , H01L27/092 , H01L21/02
CPC分类号： H01L21/823807 , H01L21/02381 , H01L21/02439 , H01L21/0245 , H01L21/02452 , H01L21/02505 , H01L21/02532 , H01L21/02538 , H01L21/02645 , H01L27/092
摘要： A substrate structure, a complementary metal oxide semiconductor (CMOS) device including the substrate structure, and a method of manufacturing the CMOS device are disclosed, where the substrate structure includes: a substrate, at least one seed layer on the substrate formed of a material including boron (B) and/or phosphorus (P), and a buffer layer on the seed layer. This substrate structure makes it possible to reduce the thickness of the buffer layer and also improve the performance characteristics of a semiconductor device formed with the substrate structure.
摘要翻译：公开了一种衬底结构，包括衬底结构的互补金属氧化物半导体（CMOS）器件以及制造CMOS器件的方法，其中衬底结构包括：衬底，由材料形成的至少一个种子层包括硼（B）和/或磷（P），以及种子层上的缓冲层。该衬底结构使得可以减小缓冲层的厚度并且还改善由衬底结构形成的半导体器件的性能特性。

5. 发明申请

US20080211385A1 ORGANIC ELECTRO-LUMINESCENT DISPLAY 审中-公开
标题翻译：有机电子显微镜
公开(公告)号：US20080211385A1
公开(公告)日：2008-09-04
申请号：US12017444
申请日：2008-01-22
申请人： Sang-yeol KIM , Mu-gyeom KIM , Sung-hun LEE , Jung-bae SONG
发明人： Sang-yeol KIM , Mu-gyeom KIM , Sung-hun LEE , Jung-bae SONG
IPC分类号： H01J1/62
CPC分类号： H01L51/0096 , H01L27/3244 , H01L51/5262 , H01L51/5275 , Y02E10/549
摘要： Provided is an organic electro-luminescent display (OELD). The OELD includes: a plurality of unit pixels having an organic light emitting unit and a driving unit for driving the organic light emitting unit; and a substrate supporting the unit pixels, wherein the substrate has a non-planar portion corresponding to the light emitting unit and increasing a surface area, and the light emitting unit has a non-planar cross-sectional shape corresponding to the non-planar portion. The OELD has a concave portion or a convex portion for enlarging a surface such that the substantial area of an organic light emitting material increases. Thus, an effective light emission area increases in a pixel having a limited area and light emission of desired high brightness can be performed by a low driving voltage. A reduction in a driving voltage causes improvement in the durability of a pixel and the life span of the OELD is enlarged.
摘要翻译：提供有机电致发光显示器（OELD）。 OELD包括：具有有机发光单元的多个单位像素和用于驱动有机发光单元的驱动单元; 以及支撑单元像素的基板，其中所述基板具有对应于所述发光单元的非平面部分并增加表面积，并且所述发光单元具有对应于所述非平面部分的非平面横截面形状。 OELD具有用于扩大表面的凹部或凸部，使得有机发光材料的实质面积增加。因此，在具有有限面积的像素中有效发光面积增加，并且可以通过低驱动电压来执行期望的高亮度的发光。驱动电压的降低导致像素的耐久性提高，并且扩大了OELD的寿命。

6. 发明申请

US20090090904A1 Organic semiconductor device 审中-公开
标题翻译：有机半导体器件
公开(公告)号：US20090090904A1
公开(公告)日：2009-04-09
申请号：US12078647
申请日：2008-04-02
申请人： Sung-hun LEE , Sang-yeol KIM , Mu-gyeom KIM , Jung-bae SONG
发明人： Sung-hun LEE , Sang-yeol KIM , Mu-gyeom KIM , Jung-bae SONG
IPC分类号： H01L29/808
CPC分类号： H01L51/0583 , H01L51/002 , H01L51/0081 , H01L51/5052 , H01L2251/308
摘要： Provided is an organic tunneling p-n junction diode. The organic tunneling p-n junction diode includes an n-doped organic semiconductor layer and a p-doped organic semiconductor layer which are doped with extrinsic impurities. When either a reverse-bias voltage or a forward-bias voltage is applied, the organic tunneling p-n junction diode is turned off within a predetermined voltage range and has exponential voltage-current characteristics outside the predetermined voltage range.
摘要翻译：提供了一种有机隧道p-n结二极管。有机隧道p-n结二极管包括掺杂有非固有杂质的n掺杂有机半导体层和p掺杂的有机半导体层。当施加反向偏置电压或正向偏置电压时，有机隧道p-n结二极管在预定电压范围内被关断，并且具有超出预定电压范围的指数电压 - 电流特性。

7. 发明申请

US20080277604A1 BIOSENSOR USING MULTIPLE LIGHT SOURCES 有权
标题翻译：生物传感器使用多光源
公开(公告)号：US20080277604A1
公开(公告)日：2008-11-13
申请号：US12030479
申请日：2008-02-13
申请人： Mu-gyeom KIM , Sang-yeol KIM , Sung-hun LEE , Jung-bae SONG
发明人： Mu-gyeom KIM , Sang-yeol KIM , Sung-hun LEE , Jung-bae SONG
IPC分类号： H01L31/14
CPC分类号： G01N33/54373 , G01N21/645
摘要： Provided is a biosensor that uses multiple organic light emitting diodes (OLEDs) as light sources. The biosensor includes a transparent substrate, a plurality of OLEDs which are disposed on a first surface of the transparent substrate and are electrically separated from each other, and a photo detector above the transparent substrate that receives light emitted from a specimen disposed on the transparent substrate, wherein the specimen is disposed on a region of a second surface which is a surface opposite to the first surface of the transparent substrate.
摘要翻译：提供了使用多个有机发光二极管（OLED）作为光源的生物传感器。生物传感器包括透明基板，多个OLED，其设置在透明基板的第一表面上并彼此电分离，以及在透明基板上方的光接收器，其接收从设置在透明基板上的试样发射的光其特征在于，所述试样配置在与所述透明基板的第一面相反的面的第二面的区域。

8. 发明申请

US20080030649A1 HYBRID DIFFUSION PLATE, BACKLIGHT ASSEMBLY HAVING HYBRID DIFFUSION PLATE, AND LIQUID CRYSTAL DISPLAY HAVING BACKLIGHT ASSEMBLY 审中-公开
标题翻译：混合扩散板，具有混合扩散板的背光组件和具有背光组件的液晶显示器
公开(公告)号：US20080030649A1
公开(公告)日：2008-02-07
申请号：US11833388
申请日：2007-08-03
申请人： Yong-seok CHOI , Jin-ho CHO , Chul-woo LEE , Sung-hun LEE
发明人： Yong-seok CHOI , Jin-ho CHO , Chul-woo LEE , Sung-hun LEE
IPC分类号： G02B5/02 , F21V9/00 , G02F1/13357
CPC分类号： G02B5/0278 , G02B5/021 , G02B5/0215 , G02B5/0242 , G02F1/133382 , G02F1/133606 , G02F2201/36
摘要： A hybrid diffusion plate includes a plurality of sub diffusion plates facing one another and diffusing light, heat-insulating layers having heat conductivity lower than the sub diffusion plates and respectively interposed between each pair of adjacent sub diffusion plates, and a sealant applied between each pair of adjacent sub diffusion plates along an edge and bonding the sub diffusion plates to each other.
摘要翻译：混合漫射板包括多个彼此面对的子扩散板和散射光，导热率低于副扩散板的热绝缘层分别介于每对相邻的子扩散板之间，以及施加在每对之间的密封剂的相邻子扩散板沿着边缘并且将子扩散板彼此接合。

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