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1. 发明申请

US20070030478A1 METHOD AND APPARATUS FOR INSPECTING TARGET DEFECTS ON A WAFER 有权
标题翻译：用于检测波峰的目标缺陷的方法和装置
公开(公告)号：US20070030478A1
公开(公告)日：2007-02-08
申请号：US11461726
申请日：2006-08-01
申请人： Moon-Kyung KIM , Chung-Sam JUN , Yu-Sin YANG
发明人： Moon-Kyung KIM , Chung-Sam JUN , Yu-Sin YANG
IPC分类号： G01N21/88
CPC分类号： G01N21/9501
摘要： A defect inspecting apparatus includes a first support unit supporting a standard sample having standard defects, a second support unit supporting a wafer having target defects, a light source irradiating an incident light to the standard sample or the wafer, a light receiving part collecting reflection light reflected from the standard sample and the wafer, a detection part detecting the standard defects and the target defects by using the reflection light, a comparing part comparing information obtained using the reflection light reflected from the standard sample with a predetermined standard information of the standard defects to confirm a reliability of a step for detecting the target defects and a determination portion determining whether the step is allowed to be performed or not.
摘要翻译：缺陷检查装置包括支撑具有标准缺陷的标准样品的第一支撑单元，支撑具有目标缺陷的晶片的第二支撑单元，向标准样品或晶片照射入射光的光源，收集反射光的光接收部从标准样品和晶片反射的检测部分，通过使用反射光检测标准缺陷和目标缺陷的检测部分，将使用从标准样品反射的反射光获得的信息与标准缺陷的预定标准信息进行比较的比较部分以确认用于检测目标缺陷的步骤的可靠性，并且确定部分确定是否允许执行该步骤。

2. 发明申请

US20070190438A1 METHOD AND APPARATUS FOR CONTROLLING LIGHT INTENSITY AND FOR EXPOSING A SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：用于控制亮度强度和暴露半导体衬底的方法和装置
公开(公告)号：US20070190438A1
公开(公告)日：2007-08-16
申请号：US11675016
申请日：2007-02-14
申请人： Kye-Weon KIM , Yu-Sin YANG , Chung-Sam JUN , Yong-Wan KIM
发明人： Kye-Weon KIM , Yu-Sin YANG , Chung-Sam JUN , Yong-Wan KIM
IPC分类号： G03F1/00 , G03C5/00 , G03B27/42
CPC分类号： G03F7/70191 , G03B27/72 , G03F7/70558 , G03F7/70625
摘要： In an embodiment, a method of controlling a light intensity includes measuring a critical dimension distribution of a pattern on a substrate. The critical dimension distribution is formed using a first illumination having a first intensity distribution, which is irradiated onto the substrate through a photo mask. A second intensity distribution of the first illumination by regions of the photo mask, which is used for forming a pattern having uniform dimensions on the substrate, is then obtained based on a relation between the first intensity distribution and the critical dimension distribution. The first illumination having the first intensity distribution is converted into a second illumination having the second intensity distribution as by interposing an array of light controlling elements (e.g., LCD pixels, or motorized polarizing elements) within the light path.
摘要翻译：在一个实施例中，控制光强度的方法包括测量衬底上图案的临界尺寸分布。临界尺寸分布使用具有第一强度分布的第一照明形成，其通过光掩模照射到基底上。基于第一强度分布和临界尺寸分布之间的关系，获得第一照明的第二强度分布，该区域用于形成具有均匀尺寸的图案的光掩模的区域。具有第一强度分布的第一照明通过在光路内插入光控制元件（例如，LCD像素或电动偏振元件）的阵列而被转换成具有第二强度分布的第二照明。

3. 发明申请

US20160025654A1 APPARATUS AND METHOD FOR INSPECTION OF SUBSTRATE DEFECT 有权
标题翻译：检测基板缺陷的装置和方法
公开(公告)号：US20160025654A1
公开(公告)日：2016-01-28
申请号：US14795396
申请日：2015-07-09
申请人： Joon-Seo SONG , Woo-seok KO , Ji-Young SHIN , Seong-Jin YUN , Yu-Sin YANG , Sang-Kil LEE , Chung-Sam JUN
发明人： Joon-Seo SONG , Woo-seok KO , Ji-Young SHIN , Seong-Jin YUN , Yu-Sin YANG , Sang-Kil LEE , Chung-Sam JUN
IPC分类号： G01N21/95 , G01N21/88
CPC分类号： G01N21/9505 , G01N21/8806 , G01N21/9501 , G01N21/95692 , G01N2201/061
摘要： Example embodiments relate to an apparatus and method for inspecting a substrate defect. The substrate defect inspecting apparatus includes a substrate, a light source emitting an infrared beam to the substrate, a detector detecting the infrared beam reflected from the substrate, and a defect analyzer receiving first information and second information from the detector and analyzing defects existing in the substrate. According to at least one example embodiment, the second information is acquired during a later process than the first information.
摘要翻译：示例性实施例涉及用于检查衬底缺陷的装置和方法。基板缺陷检查装置包括基板，向基板发射红外光束的光源，检测从基板反射的红外光束的检测器和从检测器接收第一信息和第二信息的缺陷分析器，并分析存在于基质。根据至少一个示例性实施例，在稍后的处理中获取第二信息而不是第一信息。

4. 发明申请

US20160097513A1 BROADBAND LIGHT SOURCE AND OPTICAL INSPECTOR HAVING THE SAME 有权
标题翻译：宽光源光源和具有该光源的光学检测器
公开(公告)号：US20160097513A1
公开(公告)日：2016-04-07
申请号：US14872228
申请日：2015-10-01
申请人： Sung-Yoon RYU , Woo-Seok KO , Yu-Sin YANG , Sang-Kil LEE , Chung-Sam JUN , Seong-Jin YUN
发明人： Sung-Yoon RYU , Woo-Seok KO , Yu-Sin YANG , Sang-Kil LEE , Chung-Sam JUN , Seong-Jin YUN
IPC分类号： F21V7/04 , H01S3/00 , F21V7/08
CPC分类号： H01S3/0071 , G01N21/8806 , G01N21/956
摘要： A broadband light source includes a first electrodeless lamp to generate first broadband light from plasma, a first elliptical reflector having first and second focuses, the first elliptical reflector enclosing a rear portion of the first electrodeless lamp positioned at the first focus of the first elliptical reflector such that the first broadband light is reflected from the first elliptical reflector toward a light collector as a collective light, a symmetrically curved reflector having a third focus, the symmetrically curved reflector positioned such that the third focus is coincident with one of the first and second focuses, and a laser irradiator to provide a laser beam to the first electrodeless lamp.
摘要翻译：宽带光源包括第一无电极灯以产生来自等离子体的第一宽带光，具有第一和第二焦点的第一椭圆形反射器，第一椭圆形反射器包围位于第一椭圆形反射器的第一焦点处的第一无电极灯的后部使得第一宽带光从第一椭圆形反射器朝向聚光器反射，作为集体光，具有第三焦点的对称弯曲反射器，对称弯曲的反射器被定位成使得第三焦点与第一和第二光焦度中的一个重合焦点和激光照射器，以向第一无电极灯提供激光束。

5. 发明申请

US20160013109A1 OVERLAY MEASURING METHOD AND SYSTEM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：重叠测量方法和系统以及使用其制造半导体器件的方法
公开(公告)号：US20160013109A1
公开(公告)日：2016-01-14
申请号：US14796478
申请日：2015-07-10
申请人： Seong-Jin YUN , Woo-Seok KO , Yu-Sin YANG , Sang-Kil LEE , Chung-Sam JUN
发明人： Seong-Jin YUN , Woo-Seok KO , Yu-Sin YANG , Sang-Kil LEE , Chung-Sam JUN
IPC分类号： H01L21/66 , H01J37/26
CPC分类号： H01L22/20 , H01J37/222 , H01J2237/221 , H01J2237/2617 , H01J2237/2817
摘要： An overlay measuring method includes irradiating an electron beam onto a sample, including a multi-layered structure of overlapped upper and lower patterns formed thereon, to obtain an actual image of the upper and lower patterns. A first image representing the upper pattern and a second image representing the lower pattern are obtained from the actual image. A reference position for the upper and lower patterns is determined from a design image of the upper and lower patterns. A position deviation of the upper pattern with respect to the reference position in the first image and a position deviation of the lower pattern with respect to the reference position in the second image are calculated to determine an overlay between the upper pattern and the lower pattern.
摘要翻译：覆盖测量方法包括将电子束照射到样品上，包括形成在其上的重叠的上下图案的多层结构，以获得上下图案的实际图像。从实际图像中获得代表上部图案的第一图像和表示较低图案的第二图像。根据上下图案的设计图像确定上下图案的参考位置。计算上部图形相对于第一图像中的基准位置的位置偏差和下部图形相对于第二图像中的基准位置的位置偏差，以确定上部图案和下部图案之间的叠加。

6. 发明申请

US20070041609A1 METHOD OF CLASSIFYING DEFECTS 有权
标题翻译：分类缺陷的方法
公开(公告)号：US20070041609A1
公开(公告)日：2007-02-22
申请号：US11421019
申请日：2006-05-30
申请人： Ki-Suk CHUNG , Chung-Sam JUN , Yu-Sin YANG , Byung-Sug LEE , Ji-Young SHIN , Tae-Sung KIM
发明人： Ki-Suk CHUNG , Chung-Sam JUN , Yu-Sin YANG , Byung-Sug LEE , Ji-Young SHIN , Tae-Sung KIM
IPC分类号： G06K9/00
CPC分类号： G06T7/0004
摘要： A method of classifying defects of an object includes irradiating multi-wavelength light onto the object, splitting light reflected from the object into light beams, each of the light beams having different wavelengths, obtaining image information of the object based on each of the light beams, forming a characteristic matrix that represent the wavelengths and the image information, and analyzing the characteristic matrix to determine types of the defects on the object. Thus, the defects may be accurately classified using a difference between reactivity of each of the defects in accordance with variations of the wavelengths and inspection conditions.
摘要翻译：对物体的缺陷进行分类的方法包括将多波长光照射到物体上，将从物体反射的光分成光束，每个光束具有不同的波长，基于每个光束获得物体的图像信息，形成表示波长和图像信息的特征矩阵，并且分析特征矩阵以确定对象上的缺陷的类型。因此，可以使用根据波长的变化和检查条件的每个缺陷的反应性之间的差异来精确地分类缺陷。

7. 发明申请

US20070023834A1 METHOD OF MEASURING A SURFACE VOLTAGE OF AN INSULATING LAYER 失效
标题翻译：测量绝缘层表面电压的方法
公开(公告)号：US20070023834A1
公开(公告)日：2007-02-01
申请号：US11461312
申请日：2006-07-31
申请人： Mi-Sung LEE , Yu-Sin YANG , Chung-Sam JUN , Byung-Sug LEE
发明人： Mi-Sung LEE , Yu-Sin YANG , Chung-Sam JUN , Byung-Sug LEE
IPC分类号： H01L27/12
CPC分类号： G01R31/2648 , G01R29/12 , G01R31/2656
摘要： In a method of measuring a surface voltage of an insulating layer, the number of times that surface voltages are measured in a depletion region increases so that precise data about the depletion region may be obtained. The number of times that the surface voltages are measured in an accumulation region and an inversion region decreases so that the data about the depletion region may be rapidly obtained.
摘要翻译：在测量绝缘层的表面电压的方法中，在耗尽区中测量表面电压的次数增加，从而可以获得关于耗尽区的精确数据。在积累区域和反转区域中测量表面电压的次数减少，从而可以快速获得关于耗尽区域的数据。

8. 发明申请

US20120314205A1 DEFECT INSPECTION APPARATUS AND DEFECT INSPECTION METHOD USING THE SAME 有权
标题翻译：缺陷检查装置和缺陷检查方法
公开(公告)号：US20120314205A1
公开(公告)日：2012-12-13
申请号：US13472145
申请日：2012-05-15
申请人： Young-Hoon SOHN , Yu-Sin YANG , Sang-Kil LEE
发明人： Young-Hoon SOHN , Yu-Sin YANG , Sang-Kil LEE
IPC分类号： G01N21/88 , G01R31/00
CPC分类号： G01N21/55 , G01N21/9501
摘要： A defect inspection apparatus comprises a table on which a substrate is placed, a first detection unit which is disposed above the table to detect an optical signal from the substrate, a second detection unit which is disposed above the table to detect an electrical signal from the substrate, and a signal processing unit which is connected to the first detection unit and the second detection unit to detect a chemical defect using the optical signal and the electrical signal.
摘要翻译：缺陷检查装置包括：放置基板的工作台，设置在工作台上方以检测来自衬底的光信号的第一检测单元，设置在工作台上方的第二检测单元，用于检测来自基板的电信号; 基板和连接到第一检测单元和第二检测单元的信号处理单元，以使用光信号和电信号来检测化学缺陷。

9. 发明申请

US20100136717A1 APPARATUS AND METHOD TO INSPECT DEFECT OF SEMICONDUCTOR DEVICE 失效
标题翻译：检测半导体器件缺陷的装置和方法
公开(公告)号：US20100136717A1
公开(公告)日：2010-06-03
申请号：US12627222
申请日：2009-11-30
申请人： Ji-Young SHIN , Young-Nam Kim , Jong-An KIM , Hyung-Suk CHO , Yu-Sin YANG
发明人： Ji-Young SHIN , Young-Nam Kim , Jong-An KIM , Hyung-Suk CHO , Yu-Sin YANG
IPC分类号： H01L21/66 , G01N23/00 , G06F19/00
CPC分类号： H01J37/241 , H01J37/265 , H01J37/28 , H01L22/12
摘要： An apparatus and method to inspect a defect of a semiconductor device. The amount of secondary electrons generated due to a scanning electron microscope (SEM) may depend on the topology of a pattern of a semiconductor substrate. The amount of secondary electrons emitted from a recess of an under layer is far smaller than that of secondary electrons emitted from a projection of a top layer. Since the recess is darker than the projection, a ratio of a value of a secondary electron signal of the under layer to a value of a secondary electron signal of the top layer may be increased in order to improve a pattern image used to inspect a defect in the under layer. To do this, a plurality of conditions under which electron beams (e-beams) are irradiated may be set, at least two may be selected out of the set conditions, and the pattern may be scanned under the selected conditions. Thus, secondary electron signals may be generated according to the respective conditions and converted into image data so that various pattern images may be displayed on a monitor. Scan information on the pattern images may be automatically stored in a computer storage along with positional information on a predetermined portion of the semiconductor substrate. When calculation conditions are input to a computer, each of scan information on the pattern images may be calculated to generate a new integrated pattern image.
摘要翻译：一种用于检查半导体器件的缺陷的装置和方法。由扫描电子显微镜（SEM）产生的二次电子量可能取决于半导体衬底图案的拓扑结构。从下层的凹部发射的二次电子的量远远小于从顶层的投影发射的二次电子的量。由于凹部比投影更暗，所以可以增加下层的二次电子信号的值与顶层的二次电子信号的值的比例，以便改善用于检查缺陷的图案图像在下层。为此，可以设置照射电子束（电子束）的多个条件，可以从设定条件中选择至少两个，并且可以在所选择的条件下扫描图案。因此，可以根据各自的条件生成二次电子信号，并将其转换为图像数据，从而可以在监视器上显示各种图案图像。关于图案图像的扫描信息可以与位于半导体基板的预定部分上的位置信息一起自动存储在计算机存储器中。当将计算条件输入到计算机时，可以计算每个关于图案图像的扫描信息，以生成新的集成图案图像。

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