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1. 发明专利

JP2007077410A Method for surface-treating article to be treated and surface treatment apparatus therefor 有权
标题翻译：表面处理待处理物品的方法及其表面处理装置
公开(公告)号：JP2007077410A
公开(公告)日：2007-03-29
申请号：JP2005262686
申请日：2005-09-09
申请人： Miyata Seizo , Ses Co Ltd , エス・イー・エス株式会社 , 宮田清蔵
发明人： SONE MASATO , SONETA SAKANOBU , SHIMIZU TETSUYA , AKASAKA KATSUYA , MIYAUCHI HIROYUKI
IPC分类号： C25D17/00
摘要： PROBLEM TO BE SOLVED: To provide a method for surface-treating an article to be treated in a short period of time at high working efficiency, which is most suitable for mass production, and to provide a surface treatment apparatus therefor. SOLUTION: The surface treatment apparatus for the article to be treated has: a pressure-resistant enclosed treatment tank 11 provided with a pair of pipelines 13 and 16 having a coupler 18 and 15 for being connected to the outside; and a plurality of surface treatment fluid supply means (A) to (C) that are each provided with a pair of pipelines having couplers 19a to 19c and 26a to 26c which are to be connected to the treatment tank 11, and supply a predetermined surface treatment fluid. A plurality of the surface treatment fluid supply means (A) to (C) respectively comprise: means 23a to 23c and 24a to 24c for previously keeping the predetermined surface treatment fluid in a pair of the respective pipelines at a predetermined pressure and temperature; and means for circulating the surface treatment fluid to the treatment tank when the respective supply means (A) to (C) are connected to the treatment tank 11. The surface treatment fluid may include carbon dioxide in a supercritical state. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种在最适合批量生产的高工作效率的短时间内对被处理物进行表面处理的方法，并提供一种表面处理装置。解决方案：待处理物品的表面处理装置具有：耐压封闭处理槽11，其设有一对具有连接到外部的联接器18和15的管道13和16; 以及多个表面处理流体供给装置（A）至（C），每个表面处理流体供给装置（A）至（C）各自设置有一对管道，该管道具有要连接到处理槽11的联接器19a至19c和26a至26c，并且提供预定表面治疗液。多个表面处理流体供给装置（A）至（C）分别包括：用于将预定表面处理流体预先保持在一对相应管道中的预定压力和温度的装置23a至23c和24a至24c; 以及当相应的供给装置（A）至（C）连接到处理槽11时将表面处理流体循环到处理槽的装置。表面处理流体可以包括处于超临界状态的二氧化碳。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2009275253A Electroless plating method 有权
标题翻译：电镀法
公开(公告)号：JP2009275253A
公开(公告)日：2009-11-26
申请号：JP2008126517
申请日：2008-05-13
申请人： Seizo Miyata , Ses Co Ltd , エス・イー・エス株式会社 , 宮田清蔵
发明人： SHIMIZU TETSUYA , TAJIMA NAGAYOSHI , MIYATA SEIZO , SONE MASATO
IPC分类号： C23C18/31 , H01L21/288 , H05K3/18
摘要： PROBLEM TO BE SOLVED: To provide an electroless plating method capable of obtaining a thick plating layer on a surface of an insulating body or a semi-conductor by the electroless plating in a short time by using a supercritical fluid or a subcritical fluid and using the induction eutectoid phenomenon.
SOLUTION: The electroless plating is executed on a surface of a glass substrate sample 22 as an insulating body by using a supercritical fluid or a subcritical fluid while metal powder is dispersed in an electroless plating liquid 19. A homogeneous and thick plating layer can be obtained in a short time by using the induction eutectoid phenomenon. In the electroless plating method, the metal powder having the average particle size of ≥1 nm and ≤100 μm can be used, and this electroless plating method is applicable to a damascene process or a dual damascene process which is a method for forming a fine metal wiring within a semiconductor element.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够通过使用超临界流体或亚临界流体在短时间内通过化学镀获得绝缘体或半导体的表面上的厚镀层的化学镀方法并使用感应共析现象。解决方案：通过使用超临界流体或亚临界流体，在玻璃基板样品22的表面上进行化学镀，作为绝缘体，同时金属粉末分散在化学镀液体19中。均匀且厚的镀层可以通过使用感应共析现象在短时间内获得。在化学镀方法中，可以使用平均粒径为≥1nm且≤100μm的金属粉末，并且该化学镀方法适用于作为形成细粉的方法的镶嵌法或双镶嵌法半导体元件内的金属布线。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2007214464A Method for forming micropattern 审中-公开
标题翻译：形成微孔的方法
公开(公告)号：JP2007214464A
公开(公告)日：2007-08-23
申请号：JP2006034524
申请日：2006-02-10
申请人： Seizo Miyata , Ses Co Ltd , エス・イー・エス株式会社 , 宮田清蔵
发明人： SHIMIZU TETSUYA , MIYATA SEIZO
IPC分类号： H01L21/288 , C23C18/16 , C25D7/12 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a micropattern of the order of nano meter applicable also to the so-called damascene process or the dual damascene process used as the method for forming a fine wiring in a conductive circuit element.
SOLUTION: The method for forming the micropattern buries at least one or the other of a trench 53 or a hole formed in an insulation film 52 prepared on a substrate 51 with a predetermined metal by an electroplating method using at least one or the other of carbon dioxide and inert gas, a supercritical fluid or subcritical fluid containing plating liquid, and surfactant. In this case, conventionally used electrolytic plating liquid and electroless plating liquid can be used as the electroplating liquid. Moreover, when this method for forming the micropattern is carried out, a surface treatment equipment 10 can be used, in which a grease removal portion A, an acid cleaning portion B, a catalystizing portion C, and an electroplating portion D are equipped.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于形成纳米级数微米图案的方法，其也适用于所谓的镶嵌工艺或用作在导电电路元件中形成精细布线的方法的双镶嵌工艺。解决方案：用于形成微图案的方法通过使用至少一种或多种方法的电镀方法在预定金属上在衬底51上制备的绝缘膜52中形成的沟槽53或孔中的至少一个或多个二氧化碳和惰性气体中的其他物质，含有电镀液体和表面活性剂的超临界流体或亚临界流体。在这种情况下，可以使用常规使用的电镀液和化学镀液作为电镀液。此外，当进行这种形成微图案的方法时，可以使用其中装有除油部分A，酸清洗部分B，催化部分C和电镀部分D的表面处理设备10。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2009249653A Electroplating method 有权
标题翻译：电镀方法
公开(公告)号：JP2009249653A
公开(公告)日：2009-10-29
申请号：JP2008095574
申请日：2008-04-01
申请人： Seizo Miyata , Ses Co Ltd , エス・イー・エス株式会社 , 宮田清蔵
发明人： SHIMIZU TETSUYA , TAJIMA NAGAYOSHI , MIYATA SEIZO , SONE MASATO
IPC分类号： C25D15/02 , C25D21/12 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide an electroplating method which prevents the dissolution of a metal substrate and can normally electroplate even an extremely thin metal substrate, when electroplating the surface of the metal substrate. SOLUTION: When electroplating the surface of the metal substrate, the electroplating method includes: employing an electroplating liquid which contains at least one of carbon dioxide and an inert gas, contains a surface active agent, and makes a metal powder with an average particle diameter larger than 100 μm in an amount exceeding the soluble amount of the metal powder added and dispersed therein; and electroplating the substrate in a supercritical state or a subcritical state. Then, the method can decrease a dissolution rate of the metal substrate because the metal exists in the electroplating liquid in a saturated or supersaturated state, and also prevents the occurrence of an induced co-deposition phenomenon to provide a smooth plated layer on the surface of the metal substrate in a short period of time. The electroplating method can be applied even to the case in which the metal substrate is a metallic thin film formed on the surface of an insulating layer provided on a substrate, and also even to the case in which the metal is copper, zinc, iron, nickel and cobalt. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种电镀方法，当电镀金属基板的表面时，防止金属基板的溶解，并且通常可以电镀甚至非常薄的金属基板。解决方案：当电镀金属基材的表面时，电镀方法包括：使用含有二氧化碳和惰性气体中的至少一种的电镀液体，含有表面活性剂，并制成平均的金属粉末超过其中添加和分散的金属粉末的可溶性量的大于100μm的粒径; 并将基板电镀在超临界状态或亚临界状态。然后，由于金属存在于饱和或过饱和状态的电镀液中，因此该方法可以降低金属基材的溶解速度，并且还防止了引起共沉积现象的发生，从而在金属基材在短时间内。电镀方法甚至可以应用于金属基板是形成在设置在基板上的绝缘层的表面上的金属薄膜的情况，甚至可以应用于金属为铜，锌，铁，镍和钴。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009249652A Electroless plating method 审中-公开
标题翻译：电镀法
公开(公告)号：JP2009249652A
公开(公告)日：2009-10-29
申请号：JP2008095562
申请日：2008-04-01
申请人： Seizo Miyata , Ses Co Ltd , エス・イー・エス株式会社 , 宮田清蔵
发明人： SHIMIZU TETSUYA , TAJIMA NAGAYOSHI , MIYATA SEIZO , SONE MASATO
IPC分类号： C23C18/31 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide an electroless plating method in which a subcritical fluid or a supercritical fluid is used, and with which a uniform film can be obtained by the electroless plating in a short period of time.
SOLUTION: When performing the electroless plating on the surface of a metallic base sample 22, electroless plating liquid contains at least one of carbon dioxide and inert gas, and a surfactant, metal powder having the average particle diameter larger than 100 μm is added by the amount at which no more metal powder is dissolved therein, and dispersed, and the electroless plating is performed in a supercritical or subcritical state. A uniform and thick plating layer can be obtained in a short period of time without causing any induction eutectoid phenomenon. In the electroless plating method, metallic powder having the average particle diameter larger than 100 μm can be used, and the electroless plating method is applicable to a damascene process or a dual damascene process which is a method for forming fine metal wiring within a semiconductor element.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用亚临界流体或超临界流体的化学镀方法，并且可以在短时间内通过化学镀获得均匀的膜。解决方案：当在金属基体样品22的表面上进行化学镀时，化学镀液含有二氧化碳和惰性气体中的至少一种，表面活性剂，平均粒径大于100μm的金属粉末为加入不再溶解金属粉末的量并分散，并且以超临界或亚临界状态进行化学镀。可以在短时间内获得均匀且厚的镀层，而不引起任何诱导的共析现象。在化学镀方法中，可以使用平均粒径大于100μm的金属粉末，并且化学镀方法可应用于在半导体元件内形成精细金属布线的方法的镶嵌工艺或双镶嵌工艺。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2008111197A Electroplating method 有权
标题翻译：电镀方法
公开(公告)号：JP2008111197A
公开(公告)日：2008-05-15
申请号：JP2008009151
申请日：2008-01-18
申请人： Seizo Miyata , Ses Co Ltd , エス・イー・エス株式会社 , 宮田清蔵
发明人： SHIMIZU TETSUYA , TAJIMA NAGAYOSHI , MIYATA SEIZO , SONE MASATO
IPC分类号： C25D7/12 , C25D15/02 , C25D21/12 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide an electroplating method by which the dissolution of a metal base body can be prevented and electroplating can be performed normally when the electroplating is applied to the surface of the metal base body comprising a metal thin film formed on the surface of a semiconductor layer through an insulating film.
SOLUTION: When electroplating is applied to the surface of the metal base body comprising a metal thin film formed on the surface of a semiconductor layer through an insulating film, the electroplating is performed by utilizing an induced eutectoid phenomenon in a supercritical state or a subcritical state including at least one of carbon dioxide and an inert gas, an electroplating solution in which metal powder is added and dispersed in such an amount that a portion of the metal powder is not dissolved, and a surfactant. Thereby, since the metal concentration in the electroplating solution is a saturated state or a supersaturated state, the dissolution speed of the metal base body can be reduced and a plated layer having a smooth surface can be obtained in a short time by utilizing the induced eutectoid phenomenon.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种电镀方法，通过该方法可以防止金属基体的溶解，并且当将电镀施加到金属基体的表面上时可以正常进行电镀，该金属基体包括形成的金属薄膜通过绝缘膜在半导体层的表面上。解决方案：当通过绝缘膜将电镀施加到包括在半导体层的表面上形成的金属薄膜的金属基体的表面时，通过利用超临界状态的诱导的共析现象或包括二氧化碳和惰性气体中的至少一种的亚临界状态，以金属粉末的一部分不溶解的量添加和分散金属粉末的电镀液和表面活性剂。因此，由于电镀液中的金属浓度为饱和状态或过饱和状态，因此可以减少金属基体的溶解速度，并且可以通过利用诱导的共析物在短时间内获得具有平滑表面的镀层现象。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2009203517A Surface treatment method and surface treatment apparatus for material to be treated 有权
标题翻译：待处理材料的表面处理方法和表面处理装置
公开(公告)号：JP2009203517A
公开(公告)日：2009-09-10
申请号：JP2008046551
申请日：2008-02-27
申请人： Seizo Miyata , Ses Co Ltd , エス・イー・エス株式会社 , 宮田清蔵
发明人： SHIMIZU TETSUYA , TAJIMA NAGAYOSHI , MIYATA SEIZO
IPC分类号： C25D17/00 , C25D21/12
摘要： PROBLEM TO BE SOLVED: To provide a surface treatment method and a surface treatment apparatus for a material to be treated capable of obtaining a uniform plated film on a wide surface area at a high speed. SOLUTION: The surface treatment apparatus 10 for the material to be treated includes: a pressure resistant tight close type electroplating tank 11 provided with an energizing member 19 1 also serving as a fixing means for the material to be treated 20, a counter electrode 21 and at least a pair of pipes 22, 23 for connecting to external parts; and a surface treating fluid supply means 12 connected to at least one of a pair of the pipes 22, 23 and for supplying at least one of carbon dioxide and an inert gas and a surface treating fluid containing an electroplating solution and a surfactant as a supercritical fluid or a subcritical fluid; wherein the energizing member 19 1 also serving at least as the fixing means for the material to be treated is attached to the electroplating tank 11 to be movable rotatably or back and forth through a seal member 18. An energizing member 19 2 of the counter electrode 21 can be also movable rotatably or back and forth. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于待处理材料的表面处理方法和表面处理装置，其能够在宽的表面积上高速获得均匀的镀膜。解决方案：用于待处理材料的表面处理装置10包括：耐压紧密型电镀槽11，其设有还用作材料的固定装置的激励构件19 1 待处理20，对电极21和至少一对连接到外部的管22,23; 以及连接到一对管22,23中的至少一个并且用于供应二氧化碳和惰性气体中的至少一种的表面处理流体供给装置12和包含电镀溶液和表面活性剂的表面处理流体作为超临界流体或亚临界流体; 其中至少也用作待处理材料的固定装置的激励构件19 1附接到电镀罐11，以可旋转地或通过密封构件18来回移动。通电对电极21的构件19 2 也可以可旋转地或前后移动。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008121111A Electroless plating method 有权
标题翻译：电镀法
公开(公告)号：JP2008121111A
公开(公告)日：2008-05-29
申请号：JP2007262671
申请日：2007-10-05
申请人： Seizo Miyata , Ses Co Ltd , エス・イー・エス株式会社 , 宮田清蔵
发明人： SHIMIZU TETSUYA , TAJIMA NAGAYOSHI , MIYATA SEIZO , SONE MASATO
IPC分类号： C23C18/31 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide an electroless plating method which can realize the formation of an even metal film on an insulated film formed on the surface of a semiconductor layer by electroless plating in a short time using a subcritical fluid or a supercritical fluid by taking advantage of an induction eutectoid phenomenon. SOLUTION: This invention provides an electroless plating method comprising electrolessly plating the surface of a metal base sample 22 using a supercritical fluid or a subcritical fluid in such a state that a metal powder is dispersed in an electroless plating liquid 19. According to this method, a homogeneous and thick plating layer is formed in a short time by taking advantage of an induction eutectoid phenomenon. In the electroless plating method, the metal powder may have an average particle diameter of not less than 1 nm and not more than 100 μm, and the electroless plating method may also be applied to a damascene process or a dual damascene process which is a method for forming a fine metal wiring within a semiconductor element. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种化学镀方法，其可以通过使用亚临界流体或超临界流体在短时间内通过无电解电镀在半导体层的表面上形成的绝缘膜上形成均匀的金属膜通过利用感应共析现象的流体。解决方案：本发明提供了一种化学镀方法，其包括以金属粉末分散在无电镀液体19中的状态，使用超临界流体或亚临界流体对金属基体样品22的表面进行无电镀处理。根据该方法通过利用感应共析现象在短时间内形成均匀且厚的镀层。在化学镀方法中，金属粉末的平均粒径可以为1nm以上且100μm以下，无电镀方法也可以应用于镶嵌法或双镶嵌法，该法是作为方法用于在半导体元件内形成精细的金属布线。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2008121063A Electroless plating method 有权
标题翻译：电镀法
公开(公告)号：JP2008121063A
公开(公告)日：2008-05-29
申请号：JP2006305738
申请日：2006-11-10
申请人： Seizo Miyata , Ses Co Ltd , エス・イー・エス株式会社 , 宮田清蔵
发明人： SHIMIZU TETSUYA , TAJIMA NAGAYOSHI , MIYATA SEIZO , SONE MASATO
IPC分类号： C23C18/34 , H01L21/288
CPC分类号： C23C18/00 , C23C18/1682 , C23C18/1685 , C23C18/31 , H01L21/288 , H01L21/76877
摘要： PROBLEM TO BE SOLVED: To provide an electroless plating method which can realize the formation of an even film by electroless plating in a short time using a subcritical fluid or a supercritical fluid by taking advantage of an induction eutectoid phenomenon.
SOLUTION: This invention provides an electroless plating method comprising electrolessly plating the surface of a metal base sample 22 using a supercritical fluid or a subcritical fluid in such a state that a metal powder is dispersed in an electroless plating liquid 19. According to this method, a homogeneous and thick plating layer is formed in a short time by taking advantage of an induction eutectoid phenomenon. In the electroless plating method, the metal powder may have an average particle diameter of not less than 1 nm and not more than 100 μm, and the electroless plating method may also be applied to a damascene process or a dual damascene process which is a method for forming a fine metal wiring within a semiconductor element.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种化学镀方法，其可以通过利用诱导共析现象利用亚临界流体或超临界流体在短时间内通过无电镀实现平均膜的形成。解决方案：本发明提供了一种化学镀方法，其包括以金属粉末分散在无电镀液体19中的状态，使用超临界流体或亚临界流体对金属基体样品22的表面进行无电镀处理。根据该方法通过利用感应共析现象在短时间内形成均匀且厚的镀层。在化学镀方法中，金属粉末的平均粒径可以为1nm以上且100μm以下，无电镀方法也可以应用于镶嵌法或双镶嵌法，该法是作为方法用于在半导体元件内形成精细的金属布线。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2008088498A Electroplating method 有权
标题翻译：电镀方法
公开(公告)号：JP2008088498A
公开(公告)日：2008-04-17
申请号：JP2006270762
申请日：2006-10-02
申请人： Seizo Miyata , Ses Co Ltd , エス・イー・エス株式会社 , 宮田清蔵
发明人： SHIMIZU TETSUYA , TAJIMA NAGAYOSHI , MIYATA SEIZO , SONE MASATO
IPC分类号： C25D5/00 , C25D7/12
CPC分类号： C25D15/02 , C25D3/38 , C25D5/003 , H01L21/2885 , H01L21/76877
摘要： PROBLEM TO BE SOLVED: To provide an electroplating method by which even a very thin metallic base body is normally electroplated by preventing the dissolution of the metallic base body in the electroplating on the surface of the metallic base body.
SOLUTION: The electroplating is carried out in such a state that metallic powder is dispersed in an electroplating solution 19 in the electroplating of the surface of the metallic base body. Since the metal concentration in the electroplating solution 19 is in a saturated or supersaturated state in such a case, the dissolution rate of the metallic base body 22 is suppressed and a plated layer having a smooth surface is obtained in a short period of time using inductive eutectoid phenomenon. The electroplating method is applied even when the metallic base body 22 comprises a metallic thin film formed on the surface of an insulating film provided on a substrate and the metal is copper, zinc, iron, nickel and cobalt. The electroplating method can be also applied to an electroplating method using a supercritical fluid or a subcritical fluid.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种通过防止金属基体在金属基体的表面上的电镀中的溶解而使通常电镀非常薄的金属基体的电镀方法。解决方案：电镀以金属粉末分散在金属基体表面的电镀电镀液19中的状态下进行。由于在这种情况下电镀液19中的金属浓度处于饱和或过饱和状态，所以金属基体22的溶解速度被抑制，并且在短时间内获得具有光滑表面的镀层，使用电感共析现象即使当金属基体22包括形成在设置在基板上的绝缘膜的表面上的金属薄膜，并且金属是铜，锌，铁，镍和钴时，也应用电镀方法。电镀方法也可以应用于使用超临界流体或亚临界流体的电镀方法。版权所有（C）2008，JPO＆INPIT

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