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1. 发明申请

US20120235191A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND PHOTOCOUPLER 审中-公开
标题翻译：半导体发光器件和光电子器件
公开(公告)号：US20120235191A1
公开(公告)日：2012-09-20
申请号：US13235300
申请日：2011-09-16
申请人： Miwa ISHIDA , Kenji Fujimoto
发明人： Miwa ISHIDA , Kenji Fujimoto
IPC分类号： H01L33/60
CPC分类号： H01L25/167 , H01L33/10 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first layer, a second layer and a distributed Bragg reflector. The light emitting layer has a first and second surfaces and is capable of emitting emission light having a peak wavelength in a range of 740 nm or more and 830 nm or less. The first layer is provided on a side of the first surface and has a light extraction surface. The second layer is provided on a side of the second surface. The distributed Bragg reflector layer is provided on a side of the second layer. A third and fourth layers are alternately stacked. The distributed Bragg reflector layer is capable of reflecting the emission light toward the light extraction surface. The third and fourth layers each have a bandgap wavelength shorter than the peak wavelength.
摘要翻译：根据一个实施例，半导体发光器件包括发光层，第一层，第二层和分布式布拉格反射器。发光层具有第一表面和第二表面，并且能够发射峰值波长在740nm以上且830nm以下的范围内的发光。第一层设置在第一表面的一侧并具有光提取表面。第二层设置在第二表面的一侧。分布式布拉格反射层设置在第二层的一侧。交替堆叠第三层和第四层。分布式布拉格反射层能够将发射光反射到光提取表面。第三层和第四层各自具有比峰值波长短的带隙波长。

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