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1. 发明授权

US06693665B1 System and apparatus for facilitating printing of images from an electronic camera 有权
标题翻译：用于便于从电子照相机打印图像的系统和装置
公开(公告)号：US06693665B1
公开(公告)日：2004-02-17
申请号：US09353686
申请日：1999-07-14
申请人： Mitsuyoshi Shindo , Hideki Wanami , Hikaru Kobayashi , Kiyotaka Dochi
发明人： Mitsuyoshi Shindo , Hideki Wanami , Hikaru Kobayashi , Kiyotaka Dochi
IPC分类号： H04N5225
CPC分类号： H04N1/00278 , H04N2101/00 , H04N2201/0034 , H04N2201/0049 , H04N2201/0082
摘要： A photographic apparatus is described which outputs a photographed image immediately to paper by a simple operation. The photographic apparatus includes an electronic camera for electronically acquiring an image, a connection base for removably connecting the electronic camera thereto, the connection base having a function of reading out image data from the electronic camera while the camera is connected thereto, and a printing section for acquiring the image data from the connection base and outputting an image based on the image data to paper.
摘要翻译：描述了通过简单的操作将拍摄的图像立即输出到纸张的照相设备。摄影装置包括用于电子地获取图像的电子照相机，用于将电子照相机可拆卸地连接到其上的连接基座，具有在连接照相机时从电子照相机读出图像数据的功能的连接基座，以及打印部分用于从连接基底获取图像数据，并将基于图像数据的图像输出到纸张。

2. 发明申请

US20180001669A1 PRINT METHOD, INK SET, AND INKJET PRINT DEVICE 审中-公开
公开(公告)号：US20180001669A1
公开(公告)日：2018-01-04
申请号：US15634706
申请日：2017-06-27
申请人： Juichi FURUKAWA , Masaaki Tsuda , Hidefumi Nagashima , Yukihiro Imanaga , Masahiro Kido , Hikaru Kobayashi , Yuta Nakamura
发明人： Juichi FURUKAWA , Masaaki Tsuda , Hidefumi Nagashima , Yukihiro Imanaga , Masahiro Kido , Hikaru Kobayashi , Yuta Nakamura
IPC分类号： B41J11/00 , C09D11/40 , C09D11/38
CPC分类号： B41J11/002 , B41M5/0011 , C09D11/322 , C09D11/38 , C09D11/40
摘要： A print method includes applying a first ink to a recording medium to form a first ink print layer, drying the first ink print layer to a drying ratio of 30 percent or less, and applying a second ink having a color different from that of the first ink to the first ink print layer to form a second ink print layer thereon, wherein the first ink includes a urethane resin particle and a water-soluble organic solvent having a boiling point of from 100 to 180 degrees C. or β-alkoxy propionamide of Chemical formula I, where R1 represents a methyl group, an ethyl group, a propyl group, or a butyl group and R2 and R3 each, independently represent alkyl groups having one to six carbon atoms, and the first ink and the second ink includes no organic solvent having a boiling point of 280 degrees C. or higher under 1 atm.

3. 发明申请

US20130005107A1 SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130005107A1
公开(公告)日：2013-01-03
申请号：US13634784
申请日：2011-03-02
申请人： Shigeki Imai , Takafumi Shimatani , Hikaru Kobayashi
发明人： Shigeki Imai , Takafumi Shimatani , Hikaru Kobayashi
IPC分类号： H01L21/336
CPC分类号： H01L29/78636 , H01L21/02068 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/02664 , H01L21/02672 , H01L21/32105 , H01L27/1277 , H01L29/66757 , H01L29/78618
摘要： Disclosed is a thin-film transistor (10) manufacturing method that includes a process for forming a nitrate film (12x) that includes residual nickel (22) on a surface thereof, by bringing a nitric acid solution into contact with a polysilicon layer (11x); and a process for removing the nitrate film (12x) that includes residual nickel (22) from the polysilicon layer (11x) surface. With this surface treatment process, a polysilicon layer (11) with reduced concentration of a surface residual nickel (22) is provided, and a thin-film transistor (10) having excellent surface smoothness is attained.
摘要翻译：公开了一种薄膜晶体管（10）制造方法，其包括通过使硝酸溶液与多晶硅层（11x）接触来形成包含残留镍（22）在其表面上的硝酸盐膜（12x）的工艺）; 以及从多晶硅层（11x）表面除去包括残留镍（22）的硝酸盐膜（12x）的方法。通过该表面处理工艺，提供了表面残留镍（22）的浓度降低的多晶硅层（11），并且获得了具有优异表面平滑度的薄膜晶体管（10）。

4. 发明申请

US20120326255A1 METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICES, SEMICONDUCTOR DEVICE AND TRANSFER MEMBER 有权
标题翻译：用于制造半导体器件，半导体器件和传输器件的方法和器件
公开(公告)号：US20120326255A1
公开(公告)日：2012-12-27
申请号：US13578967
申请日：2011-02-14
申请人： Hikaru Kobayashi
发明人： Hikaru Kobayashi
IPC分类号： H01L31/0352 , B32B5/02 , H01L21/00
CPC分类号： H01L31/0747 , H01L31/02363 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10T29/41 , Y10T442/10
摘要： Disclosed is a method for manufacturing semiconductor devices. Said method includes: a supply step in which a process liquid (19) that oxidizes and dissolves a target substrate (20) to be treated is supplied to the surface of said substrate (20) to be treated; a positioning step in which a mesh-like transferring member (10b) provided with a catalyst material is positioned near or in contact with the surface of the substrate (20) to be treated; and a concave or convex forming step in which a concave or convex is formed on the surface of the substrate (20) to be treated via the aforementioned supply and positioning steps. As opposed to existing manufacturing methods, which manufacture semiconductor devices provided with semiconductor substrates with highly arbitrary (i.e. not very reproducible) concaves or convexes, by forming an appropriate concave or convex or mesh at the transferring member step, the disclosed method can stably manufacture semiconductor devices provided with semiconductor substrates that have concaves or convexes of a fixed level.
摘要翻译：公开了半导体器件的制造方法。所述方法包括：供给步骤，其中将待处理的目标基板（20）氧化和溶解的处理液体（19）供给到待处理的所述基板（20）的表面; 定位步骤，其中设置有催化剂材料的网状转印构件（10b）位于待处理的基板（20）的表面附近或与之接触; 以及通过上述供给和定位步骤在待处理的基板（20）的表面上形成凹或凸的凹凸形成步骤。与现有制造方法相反，所述制造方法通过在转印构件步骤形成适当的凹或凸或网状物来制造具有高度任意（即不是非常可再现的）凹凸的半导体衬底的半导体器件，所公开的方法可以稳定地制造半导体设置有具有固定水平的凹陷或凸起的半导体衬底的器件。

5. 发明申请

US20050215070A1 Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device 有权
标题翻译：在硅衬底上形成二氧化硅膜的方法，半导体衬底上形成氧化膜的方法以及半导体器件的制造方法
公开(公告)号：US20050215070A1
公开(公告)日：2005-09-29
申请号：US10515501
申请日：2003-05-21
申请人： Hikaru Kobayashi
发明人： Hikaru Kobayashi
IPC分类号： H01L27/04 , H01L21/28 , H01L21/316 , H01L21/336 , H01L21/822 , H01L29/51 , H01L29/78 , H01L29/786 , H01L21/469
CPC分类号： H01L21/28194 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L21/28202 , H01L21/31662 , H01L29/511 , H01L29/518
摘要： After cleaning a surface of a silicon substrate (1), impurities and natural oxide film existing on the silicon substrate (1) are removed by soaking the silicon substrate (1) in a 0.5%-by-volume HF aqueous solution for 5 minutes. The silicon substrate (1) is rinsed (cleaned) with ultrapure water for five minutes. Then, the silicon substrate (1) is soaked for 30 minutes in azeotropic nitric acid heated to an azeotropic temperature of 120.7° C. In this way, an extremely thin chemical oxide film (5) is formed on the surface of the silicon substrate (1). Subsequently, a metal film (6) (aluminum-silicon alloy film) is deposited, followed by heating in a hydrogen-containing gas at 200° C. for 20 minutes. Through the heat processing in the hydrogen-containing gas, hydrogen reacts with interface states and defect states in the chemical oxide film (5), causing disappearance of the interface states and defect states. As a result, the quality of the film can be improved. Thus, it is possible to form a high quality (with low leak current density), extremely thin silicon dioxide film on the silicon substrate at a low temperature with excellent film-thickness controllability.
摘要翻译：在清洗硅衬底（1）的表面之后，通过将硅衬底（1）浸泡在0.5％体积的HF水溶液中5分钟来除去存在于硅衬底（1）上的杂质和自然氧化物膜。将硅衬底（1）用超纯水冲洗（清洁）5分钟。然后，将硅基板（1）在加热至共沸温度为120.7℃的共沸硝酸中浸泡30分钟。以这种方式，在硅基板的表面上形成极薄的化学氧化物膜（5） 1）。随后，沉积金属膜（6）（铝 - 硅合金膜），然后在含氢气体中在200℃下加热20分钟。通过含氢气体中的热处理，氢与化学氧化膜（5）中的界面态和缺陷状态发生反应，导致界面状态和缺陷状态的消失。结果，可以提高胶片的质量。因此，可以在低温下在硅衬底上形成高质量（低漏电流密度），极薄的二氧化硅膜，具有优异的膜厚可控性。

6. 发明授权

US10072170B2 Ink set and ink-jet recording method 有权
公开(公告)号：US10072170B2
公开(公告)日：2018-09-11
申请号：US15070193
申请日：2016-03-15
申请人： Hikaru Kobayashi , Tomohiro Nakagawa , Noriaki Okada
发明人： Hikaru Kobayashi , Tomohiro Nakagawa , Noriaki Okada
IPC分类号： C09D11/40 , C09D11/033 , C09D11/322 , C09D11/38 , C09D11/102
CPC分类号： C09D11/40 , C09D11/033 , C09D11/102 , C09D11/322 , C09D11/38
摘要： An ink set that includes a first ink and a second ink each containing coloring agent, surfactant, organic solvent, resin, and water. The mix SP value of the organic solvent and the water of the first ink is larger than the mix SP value of the organic solvent and the water of the second ink. An ink-jet recording method using the ink set.

7. 发明申请

US20180170061A1 CLEANING LIQUID, CONTAINER, INKJET PRINTING METHOD, INKJET PRINTING DEVICE, AND SET OF INK AND CLEANING LIQUID 审中-公开
公开(公告)号：US20180170061A1
公开(公告)日：2018-06-21
申请号：US15842003
申请日：2017-12-14
申请人： Yuta NAKAMURA , Michihiko Namba , Masahiro Kido , Hiroaki Takahashi , Hikaru Kobayashi , Naoto Shimura , Akiko Bannai , Shizuka Kohzuki
发明人： Yuta NAKAMURA , Michihiko Namba , Masahiro Kido , Hiroaki Takahashi , Hikaru Kobayashi , Naoto Shimura , Akiko Bannai , Shizuka Kohzuki
IPC分类号： B41J2/165 , C11D7/50 , C09D11/322
CPC分类号： B41J2/16552 , C09D11/102 , C09D11/322 , C09D11/38 , C09D11/40 , C09D11/54 , C11D7/5022
摘要： A cleaning liquid for rinsing an ink adhering to an article includes water and a first organic solvent, wherein a liquid mixture of the water and the first organic solvent has a Hansen solubility parameter including a hydrogen bond term of 10.0 (cal/cm3)1/2 or less, wherein the ink includes water, a second organic solvent, a polyurethane resin particle, and a polysiloxane surfactant having an HLB value of 8 or less, wherein the polyurethane resin particle accounts for 5 percent by mass or more of a total amount of the ink.

8. 发明授权

US08728941B2 Semiconductor apparatus and manufacturing method of same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08728941B2
公开(公告)日：2014-05-20
申请号：US13634784
申请日：2011-03-02
申请人： Shigeki Imai , Takafumi Shimatani , Hikaru Kobayashi
发明人： Shigeki Imai , Takafumi Shimatani , Hikaru Kobayashi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L29/78636 , H01L21/02068 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/02664 , H01L21/02672 , H01L21/32105 , H01L27/1277 , H01L29/66757 , H01L29/78618
摘要： Disclosed is a thin-film transistor (10) manufacturing method that includes a process for forming a nitrate film (12x) that includes residual nickel (22) on a surface thereof, by bringing a nitric acid solution into contact with a polysilicon layer (11x); and a process for removing the nitrate film (12x) that includes residual nickel (22) from the polysilicon layer (11x) surface. With this surface treatment process, a polysilicon layer (11) with reduced concentration of a surface residual nickel (22) is provided, and a thin-film transistor (10) having excellent surface smoothness is attained.
摘要翻译：公开了一种薄膜晶体管（10）制造方法，其包括通过使硝酸溶液与多晶硅层（11x）接触来形成包含残留镍（22）在其表面上的硝酸盐膜（12x）的工艺）; 以及从多晶硅层（11x）表面除去包括残留镍（22）的硝酸盐膜（12x）的方法。通过该表面处理工艺，提供了表面残留镍（22）的浓度降低的多晶硅层（11），并且获得了具有优异表面平滑度的薄膜晶体管（10）。

9. 发明授权

US07157383B2 Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device 有权
标题翻译：在硅衬底上形成二氧化硅膜的方法，半导体衬底上形成氧化膜的方法以及半导体器件的制造方法
公开(公告)号：US07157383B2
公开(公告)日：2007-01-02
申请号：US10515501
申请日：2003-05-21
申请人： Hikaru Kobayashi
发明人： Hikaru Kobayashi
IPC分类号： H01L21/469 , H01L21/44 , H01L21/28 , H01L21/4763
CPC分类号： H01L21/28194 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L21/28202 , H01L21/31662 , H01L29/511 , H01L29/518
摘要： After cleaning a surface of a silicon substrate (1), impurities and natural oxide film existing on the silicon substrate (1) are removed by soaking the silicon substrate (1) in a 0.5%-by-volume HF aqueous solution for 5 minutes. The silicon substrate (1) is rinsed (cleaned) with ultrapure water for five minutes. Then, the silicon substrate (1) is soaked for 30 minutes in azeotropic nitric acid heated to an azeotropic temperature of 120.7° C. In this way, an extremely thin chemical oxide film (5) is formed on the surface of the silicon substrate (1). Subsequently, a metal film (6) (aluminum-silicon alloy film) is deposited, followed by heating in a hydrogen-containing gas at 200° C. for 20 minutes. Through the heat processing in the hydrogen-containing gas, hydrogen reacts with interface states and defect states in the chemical oxide film (5), causing disappearance of the interface states and defect states. As a result, the quality of the film can be improved. Thus, it is possible to form a high quality (with low leak current density), extremely thin silicon dioxide film on the silicon substrate at a low temperature with excellent film-thickness controllability.
摘要翻译：在清洗硅衬底（1）的表面之后，通过将硅衬底（1）浸泡在0.5％体积的HF水溶液中5分钟来除去存在于硅衬底（1）上的杂质和自然氧化物膜。将硅衬底（1）用超纯水冲洗（清洁）5分钟。然后，将硅基板（1）在加热至共沸温度为120.7℃的共沸硝酸中浸泡30分钟。以这种方式，在硅基板的表面上形成极薄的化学氧化物膜（5） 1）。随后，沉积金属膜（6）（铝 - 硅合金膜），然后在含氢气体中在200℃下加热20分钟。通过含氢气体中的热处理，氢与化学氧化膜（5）中的界面态和缺陷状态发生反应，导致界面状态和缺陷状态的消失。结果，可以提高胶片的质量。因此，可以在低温下在硅衬底上形成高质量（低漏电流密度），极薄的二氧化硅膜，具有优异的膜厚可控性。

10. 发明授权

US06739777B2 Printer and roll-shaped printing medium therefor 失效
标题翻译：打印机和滚动式打印介质
公开(公告)号：US06739777B2
公开(公告)日：2004-05-25
申请号：US10315542
申请日：2002-12-10
申请人： Hikaru Kobayashi , Masahiro Uehara
发明人： Hikaru Kobayashi , Masahiro Uehara
IPC分类号： B41J1126
CPC分类号： B41J11/706 , B26D3/085 , B26D5/02 , B26D9/00 , B41J11/666 , B41J15/042
摘要： A printer that uses a roll-shaped printing medium comprising a printing surface on which images are printed, a releasably adhered printing portion, and a release portion holding the adhered printing portion includes a conveying device conveying the printing medium while pulling out the printing medium by a predetermined amount every time an image is to be printed; a printing member printing an image with respect to the printing medium conveyed by the conveying device; a half-cutting unit cutting off the printing portion of the printing medium except for the release portion, along the conveying direction of the image printed by the printing member, at the interval corresponding to the dimension of the image in the width direction perpendicular to the conveying direction; and a cutting unit cutting the printing medium along the width direction, at the positions corresponding to the dimension of the aforementioned image in the conveying direction.
摘要翻译：一种打印机，其使用包括印刷图像的印刷表面，可剥离粘合的印刷部分和保持粘合的印刷部分的释放部分的辊状印刷介质，所述打印机包括传送打印介质的输送装置，同时通过每次打印图像时预定量; 打印部件，其相对于由所述输送装置输送的所述打印介质打印图像; 半切割单元沿着与打印部件打印的图像的传送方向相对应于与垂直于打印部件的宽度方向的图像的尺寸相对应的间隔切除除了剥离部分之外的打印介质的打印部分输送方向以及切割单元，在与传送方向上的上述图像的尺寸相对应的位置沿着宽度方向切割打印介质。

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