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1. 发明授权

US08680640B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08680640B2
公开(公告)日：2014-03-25
申请号：US13462895
申请日：2012-05-03
申请人： Mitsuyoshi Mori , Toru Okino , Yutaka Hirose , Yoshihisa Kato
发明人： Mitsuyoshi Mori , Toru Okino , Yutaka Hirose , Yoshihisa Kato
IPC分类号： H01L27/148
CPC分类号： H01L27/14645 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/1463 , H01L27/14632 , H01L27/1464
摘要： A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer.
摘要翻译：固态成像装置包括半导体衬底; 多个n型光电转换部，形成在半导体衬底的上部并且以矩阵形式布置; 输出电路，其形成在作为半导体衬底的一个表面的电荷检测表面上，并检测存储在光电转换部中的电荷; 多个形成在输出电路下的p型隔离扩散层，并且包括与各个光电转换部分相邻的高浓度p型层; 以及形成在作为与半导体衬底的一个表面相对的另一表面的光入射表面上并且透射具有不同波长的光的滤色器。各个光电转换部分的形状对应于滤色器，并且根据构成隔离扩散层的高浓度p型层而不同。

2. 发明授权

US08704321B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08704321B2
公开(公告)日：2014-04-22
申请号：US13462889
申请日：2012-05-03
申请人： Toru Okino , Yoshihisa Kato , Yutaka Hirose , Mitsuyoshi Mori
发明人： Toru Okino , Yoshihisa Kato , Yutaka Hirose , Mitsuyoshi Mori
IPC分类号： H01L29/51
CPC分类号： H01L27/14625 , H01L27/1464 , H01L27/14665 , H01L27/14685
摘要： Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed.
摘要翻译：本发明的固体摄像装置是在半导体基板的第一面侧形成有配线层的背照明型固体摄像元件，以及光接收从第一表面侧相反的第二表面侧入射的光的光接收部分，其中由具有自发极化的材料形成的自发偏振膜形成在光接收部分的光接收表面上。因此，能够在受光部的受光面上形成空穴积聚层，能够抑制暗电流。

3. 发明授权

US08866059B2 Solid state imaging device and differential circuit having an expanded dynamic range 有权
标题翻译：具有扩展动态范围的固态成像装置和差分电路
公开(公告)号：US08866059B2
公开(公告)日：2014-10-21
申请号：US13055863
申请日：2009-07-23
申请人： Takahiko Murata , Takayoshi Yamada , Yoshihisa Kato , Shigetaka Kasuga , Mitsuyoshi Mori
发明人： Takahiko Murata , Takayoshi Yamada , Yoshihisa Kato , Shigetaka Kasuga , Mitsuyoshi Mori
IPC分类号： H01L27/00 , H01L27/146 , H04N5/235 , H04N5/355
CPC分类号： H01L27/14603 , H01L27/14643 , H01L27/14645 , H04N5/2355 , H04N5/35572 , H04N5/3559
摘要： A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.
摘要翻译：可配置为适于扩展动态范围的小尺寸的固态成像装置包括：光电二极管，其是通过入射光产生电荷的光电转换单元; 连接到光电二极管并传送电荷的MOS晶体管; 浮动扩散区域，其是通过MOS晶体管积累电荷的第一累积单元; MOS晶体管，其是与所述浮动扩散区域连接并与所述MOS晶体管串联连接的第二转移单元; 以及MOS晶体管，其是经由MOS晶体管输出根据电荷量的信号电压的输出单元。

4. 发明申请

US20110121162A1 SOLID-STATE IMAGING DEVICE AND DIFFERENTIAL CIRCUIT 有权
标题翻译：固态成像装置和差分电路
公开(公告)号：US20110121162A1
公开(公告)日：2011-05-26
申请号：US13055863
申请日：2009-07-23
申请人： Takahiko Murata , Takayoshi Yamada , Yoshihisa Kato , Shigetaka Kasuga , Mitsuyoshi Mori
发明人： Takahiko Murata , Takayoshi Yamada , Yoshihisa Kato , Shigetaka Kasuga , Mitsuyoshi Mori
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14643 , H01L27/14645 , H04N5/2355 , H04N5/35572 , H04N5/3559
摘要： A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.
摘要翻译：可配置为适于扩展动态范围的小尺寸的固态成像装置包括：光电二极管，其是通过入射光产生电荷的光电转换单元; 连接到光电二极管并传送电荷的MOS晶体管; 浮动扩散区域，其是通过MOS晶体管积累电荷的第一累积单元; MOS晶体管，其是与所述浮动扩散区域连接并与所述MOS晶体管串联连接的第二转移单元; 以及MOS晶体管，其是经由MOS晶体管输出根据电荷量的信号电压的输出单元。

5. 发明申请

US20130002882A1 IMAGE-CAPTURING DEVICE 审中-公开
标题翻译：图像捕获设备
公开(公告)号：US20130002882A1
公开(公告)日：2013-01-03
申请号：US13611586
申请日：2012-09-12
申请人： Kazutoshi ONOZAWA , Yoshihisa Kato , Shinzou Kouyama
发明人： Kazutoshi ONOZAWA , Yoshihisa Kato , Shinzou Kouyama
IPC分类号： H04N5/335 , H04N5/33
CPC分类号： H04N5/2354 , G01S7/4863 , G01S17/87 , G01S17/89 , H04N5/2353 , H04N5/332 , H04N9/045 , H04N2209/045
摘要： The image-capturing device according to the present invention includes a solid-state imaging element, an infrared LED which emits infrared light, a light-emission controlling unit which causes the infrared LED to emit infrared pulsed light on a per frame time basis, and a signal processing unit which extracts, from the solid-state imaging element, a color visible-light image signal in synchronization with a non-emitting period and an infrared image signal in synchronization with an emitting period of the infrared LED. The solid-state imaging element includes an image-capturing region in which unit-arrays are two-dimensionally arranged, and each of the unit-arrays has a pixel for receiving green visible light and infrared light, a pixel for receiving red visible light and infrared light, a pixel for receiving blue visible light and infrared light, and a pixel for receiving infrared light.
摘要翻译：根据本发明的图像捕获装置包括：固态成像元件，发射红外光的红外LED;发射控制单元，其使得红外线LED在每帧时间基础上发射红外脉冲光;以及信号处理单元，其与红外LED的发光周期同步地从固态成像元件提取与非发光周期同步的彩色可见光图像信号和红外图像信号。固态成像元件包括其中单元阵列被二维布置的图像捕获区域，并且每个单位阵列具有用于接收绿色可见光和红外光的像素，用于接收红色可见光的像素和红外光，用于接收蓝色可见光和红外光的像素，以及用于接收红外光的像素。

6. 发明授权

US08226350B2 Fan apparatus 有权
标题翻译：风扇装置
公开(公告)号：US08226350B2
公开(公告)日：2012-07-24
申请号：US12103918
申请日：2008-04-16
申请人： Tomo Hayashigaito , Kenji Iwamoto , Yoshihisa Kato , Hironobu Nishida , Suguru Yamada , Manabu Miyakoda
发明人： Tomo Hayashigaito , Kenji Iwamoto , Yoshihisa Kato , Hironobu Nishida , Suguru Yamada , Manabu Miyakoda
IPC分类号： F04D29/54
CPC分类号： F04D19/007 , F04D25/0613 , F04D29/526
摘要： A fan apparatus includes a casing and a fan unit. The casing is a hollow member having an inlet and an outlet. The fan unit has an inlet and an outlet, and includes a plurality of axial fans. The fan unit is disposed on the inside of the casing, and the inlet of the fan unit is disposed in the vicinity of the inlet of the casing. The position of the fan unit within the casing can be varied in order to alter the air flow and static pressure of the air discharged by the fan apparatus.
摘要翻译：风扇装置包括壳体和风扇单元。壳体是具有入口和出口的中空构件。风扇单元具有入口和出口，并且包括多个轴流风扇。风扇单元设置在壳体的内部，风扇单元的入口设置在壳体的入口附近。风扇单元在壳体内的位置可以变化，以便改变由风扇装置排放的空气的空气流量和静压力。

7. 发明授权

US08004871B2 Semiconductor memory device including FET memory elements 有权
标题翻译：半导体存储器件包括FET存储元件
公开(公告)号：US08004871B2
公开(公告)日：2011-08-23
申请号：US12405799
申请日：2009-03-17
申请人： Yukihiro Kaneko , Yoshihisa Kato
发明人： Yukihiro Kaneko , Yoshihisa Kato
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C11/5657 , H01L27/1159 , H01L27/11597 , H01L27/12 , H01L29/6684 , H01L29/78391
摘要： A memory cell includes a memory element including a MFSFET having a gate insulating film made of a ferroelectric film, and a selection switching element including a MISFET having a gate insulating film made of a paraelectric film. A load element for a read operation is connected in series to the memory cell. The ferroelectric film and the paraelectric film are stacked with a semiconductor film being interposed therebetween. The semiconductor film forms a common channel shared by the MFSFET and the MISFET. The load element includes a MISFET having a channel made of the semiconductor film or a resistance element having a resistor made of the semiconductor film.
摘要翻译：存储单元包括存储元件，其包括具有由铁电体膜构成的栅极绝缘膜的MFSFET，以及选择开关元件，其包括具有由绝缘膜形成的栅极绝缘膜的MISFET。用于读取操作的负载元件与存储器单元串联连接。铁电体膜和对称电介质膜层叠有半导体膜。半导体膜形成由MFSFET和MISFET共享的公共通道。负载元件包括具有由半导体膜形成的沟道的MISFET或具有由半导体膜制成的电阻器的电阻元件。

8. 发明授权

US07956916B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US07956916B2
公开(公告)日：2011-06-07
申请号：US12195584
申请日：2008-08-21
申请人： Takahiko Murata , Yoshihisa Kato , Shigetaka Kasuga , Takayoshi Yamada
发明人： Takahiko Murata , Yoshihisa Kato , Shigetaka Kasuga , Takayoshi Yamada
IPC分类号： H04N5/335
CPC分类号： H04N5/37452 , H04N5/35581 , H04N5/3559
摘要： Provided is a solid-state imaging device having pixel units that are two-dimensionally arranged, and including: a photodiode that generates an optical signal charge corresponding to an intensity and an exposure time of light; a MOS transistor that transfers the optical signal charge; an accumulating unit that generates a voltage corresponding to the signal charge through the MOS transistor; a storing unit that stores a voltage corresponding to an optical signal charge in the accumulating unit; and a voltage setting unit that sets a value of a voltage in the accumulating unit to a value corresponding to the voltage in the storing unit.
摘要翻译：提供一种具有二维排列的像素单元的固态成像装置，包括：产生对应于光的强度和曝光时间的光信号电荷的光电二极管; 传输光信号电荷的MOS晶体管; 累积单元，其产生对应于通过MOS晶体管的信号电荷的电压; 存储单元，其将与所述积累单元中的光信号电荷相对应的电压存储; 以及电压设定单元，其将所述累积单元中的电压值设定为与所述存储单元中的电压对应的值。

9. 发明授权

US07629635B2 Semiconductor memory and driving method for the same 失效
标题翻译：半导体存储器和驱动方法相同
公开(公告)号：US07629635B2
公开(公告)日：2009-12-08
申请号：US11520011
申请日：2006-09-13
申请人： Kazuhiro Kaibara , Shinzo Koyama , Yoshihisa Kato
发明人： Kazuhiro Kaibara , Shinzo Koyama , Yoshihisa Kato
IPC分类号： H01L29/51
CPC分类号： H01L27/11502 , H01L21/28291 , H01L29/78391
摘要： A semiconductor memory includes a conducting film formed on a substrate; a ferroelectric film formed above or below the conducting film; a source electrode and a drain electrode disposed in positions opposing the conducting film with the ferroelectric film sandwiched therebetween and spaced from each other; and an insulating film formed between the source electrode and the drain electrode.
摘要翻译：半导体存储器包括形成在基板上的导电膜; 形成在导电膜上方或下方的铁电膜; 源电极和漏电极，设置在与导电膜相对的位置，铁电体膜夹在它们之间并彼此间隔开; 以及形成在源电极和漏电极之间的绝缘膜。

10. 发明申请

US20090290404A1 SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器件
公开(公告)号：US20090290404A1
公开(公告)日：2009-11-26
申请号：US12405799
申请日：2009-03-17
申请人： Yukihiro KANEKO , Yoshihisa Kato
发明人： Yukihiro KANEKO , Yoshihisa Kato
IPC分类号： G11C11/22 , G11C11/00 , H01L27/115
CPC分类号： G11C11/22 , G11C11/5657 , H01L27/1159 , H01L27/11597 , H01L27/12 , H01L29/6684 , H01L29/78391
摘要： A memory cell includes a memory element including a MFSFET having a gate insulating film made of a ferroelectric film, and a selection switching element including a MISFET having a gate insulating film made of a paraelectric film. A load element for a read operation is connected in series to the memory cell. The ferroelectric film and the paraelectric film are stacked with a semiconductor film being interposed therebetween. The semiconductor film forms a common channel shared by the MFSFET and the MISFET. The load element includes a MISFET having a channel made of the semiconductor film or a resistance element having a resistor made of the semiconductor film.
摘要翻译：存储单元包括存储元件，其包括具有由铁电体膜构成的栅极绝缘膜的MFSFET，以及选择开关元件，其包括具有由绝缘膜形成的栅极绝缘膜的MISFET。用于读取操作的负载元件与存储器单元串联连接。铁电体膜和对称电介质膜层叠有半导体膜。半导体膜形成由MFSFET和MISFET共享的公共通道。负载元件包括具有由半导体膜形成的沟道的MISFET或具有由半导体膜制成的电阻器的电阻元件。

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