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1. 依法登记的发明

USH782H Silver halide color photographic material 失效
公开(公告)号：USH782H
公开(公告)日：1990-05-01
申请号：US95714
申请日：1987-09-14
申请人： Mitsunori Ono , Koji Tamoto , Yoshisada Nakamura , Shingo Sato
发明人： Mitsunori Ono , Koji Tamoto , Yoshisada Nakamura , Shingo Sato
IPC分类号： G03C7/26 , G03C7/32 , G03C7/38
CPC分类号： G03C7/3225
摘要： A silver halide color photographic material in disclosed which comprises a support having thereon at least one silver halide emulsion layer, wherein the photographic material contains at least one compound represented by general formula (I) and at least one compound represented by general formula (II) in combination:Cp--(TIME).sub.n --X--Dye (I)wherein Cp represents a coupler residue capable of releasing --(TIME).sub.n --X--Dye upon coupling with an oxidation product of an aromatic primary amine developing agent; TIME represents a timing group; n represents 0 or a positive integer; Dye represents a dye residue, and X represents an auxochromic group of said dye; ##STR1## wherein R represents a hydrogen atom or a substituent; Y represents a hydrogen atom or a coupling-off group; Za, Zb and Zc each represents a methine group, a substituted methine group, .dbd.N-- or --NH--; either the Za--Zb bond or the Zb-Zc bond represents a double bond and the other represents a single bond, provided that when Za, Zb or Zc represents a substituted methine group, one of the substituted methine group or R may be a divalent group capable of linking to form a dimer or higher polymer, and provided that Y does not represent --(TIME).sub.n --X--Dye as defined in general formula (I). The photographic material has improved sharpness and color reproducibility.

2. 发明授权

US4824773A Silver halide color photographic material 失效
标题翻译：卤化银彩色照相材料
公开(公告)号：US4824773A
公开(公告)日：1989-04-25
申请号：US041560
申请日：1987-04-23
申请人： Shingo Sato , Yoshisada Nakamura , Koji Tamoto
发明人： Shingo Sato , Yoshisada Nakamura , Koji Tamoto
IPC分类号： G03C7/36 , C07C317/22 , G03C7/305
CPC分类号： C07C317/22 , G03C7/30535
摘要： A silver halide color photographic material comprising a support having thereon at least a silver halide emulsion layer containing a compound represented by formula (I) ##STR1## wherein R.sup.1 and R.sup.2 each represents a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, an alkoxycarbonyl group, a carbamoyl group, a carbonamido group, a sulfonamido group, or a sulfamoyl group; R.sup.3 represents a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, or a carbonamido group; X represents a halogen atom or an alkoxy group; R.sup.4 represents a carbamoyl group, an alkylsulfonyl group, an arylsulfonyl group, or a sulfamoyl group; R.sup.5 represents a hydrogen atom, a halogen atom, a halogen-substituted alkyl group, a nitro group, a cyano group, a carbamoyl group, a sulfamoyl group, an alkylsulfonyl group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an alkoxy group, an aryloxy group, a carbonamido group, or a sulfonamido group; provided that at least one of said R.sup.1, R.sup.2, and R.sup.5 is a non-diffusible group; and m represents an integer of from 0 to 4.
摘要翻译：一种卤化银彩色照相材料，其包含至少一种含有式（I）表示的化合物的卤化银乳剂层的载体，其中R 1和R 2各自表示氢原子，烷基，烷氧基卤素原子，烷氧基羰基，氨基甲酰基，碳酰氨基，亚磺酰氨基或氨磺酰基; R3表示氢原子，卤素原子，烷基，烷氧基或碳酰氨基; X表示卤素原子或烷氧基; R4表示氨基甲酰基，烷基磺酰基，芳基磺酰基或氨磺酰基; R5表示氢原子，卤素原子，卤素取代的烷基，硝基，氰基，氨基甲酰基，氨磺酰基，烷基磺酰基，酰基，烷氧基羰基，芳氧基羰基，烷氧基，芳氧基，碳酰氨基或亚磺酰氨基; 条件是所述R1，R2和R5中的至少一个是非扩散性基团; m表示0〜4的整数。

3. 发明授权

US4652516A Silver halide color photographic light-sensitive material 失效
标题翻译：卤化银彩色摄影感光材料
公开(公告)号：US4652516A
公开(公告)日：1987-03-24
申请号：US737636
申请日：1985-05-24
申请人： Seiji Ichijima , Shingo Sato , Mitsunori Ono , Noboru Sasaki
发明人： Seiji Ichijima , Shingo Sato , Mitsunori Ono , Noboru Sasaki
IPC分类号： G03C7/26 , C07D249/18 , C07D257/04 , C07D403/04 , G03C7/305 , G03C1/40 , G03C1/06 , G03C1/34 , G03C7/34
CPC分类号： C07D257/04 , C07D249/18 , C07D403/04 , G03C7/305 , Y10S430/156 , Y10S430/158
摘要： A silver halide color photographic light-sensitive material comprising a support having thereon at least one silver halide emulsion layer, the color photographic light-sensitive material containing a compound capable of releasing a group represented by the general formula (I) described below upon the reaction with the oxidation product of a developing agent: ##STR1## wherein W represents an oxygen atom, a sulfur atom or a group ##STR2## (wherein R represents a hydrogen atom or an organic residue); X represents an electron withdrawing substituent; Y represents a hydrogen atom or a substituent; PUG represents a photographically useful group or a precursor thereof; X and Y each represents a divalent group and may be connected to each other to form a cyclic structure; and when W represents the group ##STR3## and R represents an organic residue, R and X or R and Y each represents a divalent group and may be connected to each other to form a cyclic structure.
摘要翻译：一种卤化银彩色照相感光材料，其包括其上具有至少一个卤化银乳剂层的载体，所述彩色照相感光材料含有能够在反应后释放由下述通式（I）表示的基团的化合物与其中W表示氧原子，硫原子或基团（其中R表示氢原子或有机残基）的显影剂的氧化产物：其中W表示氧原子。 X表示吸电子取代基; Y表示氢原子或取代基; PUG代表摄影有用的组或其前体; X和Y各自表示二价基团并且可以彼此连接以形成环状结构; 当W表示基团<＆lt; IMAGE＆gt; R表示有机残基时，R和X或R和Y各自表示二价基团，并且可以彼此连接形成环状结构。

4. 发明授权

US08809942B2 Semiconductor device having trench structure 有权
标题翻译：具有沟槽结构的半导体器件
公开(公告)号：US08809942B2
公开(公告)日：2014-08-19
申请号：US13419400
申请日：2012-03-13
申请人： Shizue Matsuda , Shingo Sato , Wataru Saito
发明人： Shizue Matsuda , Shingo Sato , Wataru Saito
IPC分类号： H01L29/772
CPC分类号： H01L29/7811 , H01L29/0653 , H01L29/0661 , H01L29/66734 , H01L29/7813
摘要： According to an embodiment, a trench structure and a second semiconductor layer are provided in a semiconductor device. In the trench structure, a trench is provided in a surface of a device termination portion with a first semiconductor layer of a first conductive type including a device portion and the device termination portion, and an insulator is buried in the trench in such a manner to cover the trench. The second semiconductor layer, which is of a second conductive type, is provided on the surface of the first semiconductor layer, is in contact with at least a side on the device portion of the trench, and has a smaller depth than the trench. The insulator and a top passivation film for the semiconductor device are made of the same material.
摘要翻译：根据实施例，在半导体器件中设置沟槽结构和第二半导体层。在沟槽结构中，在器件端子部分的表面中设置沟槽，其中第一半导体层具有包括器件部分和器件端接部分的第一导电类型，并且绝缘体以这样的方式被掩埋在沟槽中：覆盖沟槽。具有第二导电类型的第二半导体层设置在第一半导体层的表面上，与沟槽的器件部分的至少一侧接触，并且具有比沟槽更小的深度。用于半导体器件的绝缘体和顶部钝化膜由相同的材料制成。

5. 发明申请

US20140014056A1 INTAKE MANIFOLD 有权
标题翻译：吸入歧管
公开(公告)号：US20140014056A1
公开(公告)日：2014-01-16
申请号：US14009399
申请日：2012-04-03
申请人： Shingo Sato
发明人： Shingo Sato
IPC分类号： F02M35/108
CPC分类号： F02M35/108 , F02M26/19 , F02M26/41 , F02M26/44 , F02M35/10072 , F02M35/10111 , F02M35/10222 , F02M35/112 , Y02T10/121
摘要： An intake manifold is equipped with a sub-stream passage connected to branch passages through respective connection ports to introduce intake-air substream other than intake-air mainstream to the plural branch passages. Two of the branch passages which communicate with each other through the sub-stream passage and successively introduce intake air to the internal combustion engine are defined as a first combination. Of the first combinations, a second combination is defined to have a shortest communication length via the sub-stream passage. Of the second combination, the connection port of one of the branch passages where the intake air is introduced later is narrower than that of the other of the branch passages where the intake air is introduced earlier.
摘要翻译：进气歧管配备有通过各个连接口连接到分支通道的子流通道，以将进气 - 空气主流以外的进气气流引入多个分支通道。通过副流路相互连通并连续地向内燃机中引入进气的两个分支通道被定义为第一组合。在第一组合中，第二组合被定义为具有经由子流通道的最短通信长度。在第二组合中，稍后引入吸入空气的分支通道中的一个的连接端口比较早引入进气的其他分支通道的连接口窄。

6. 发明申请

US20090117396A1 Method for Forming Multilayer Coating Film 有权
标题翻译：多层涂膜成型方法
公开(公告)号：US20090117396A1
公开(公告)日：2009-05-07
申请号：US12226564
申请日：2007-04-24
申请人： Satoru Furusawa , Takato Adachi , Shingo Sato , Terutaka Takahashi
发明人： Satoru Furusawa , Takato Adachi , Shingo Sato , Terutaka Takahashi
IPC分类号： B32B15/09 , B05D3/02
CPC分类号： C09D175/06 , B05D7/572 , B05D7/577 , B05D2202/10 , C08G18/2865 , C08G18/288 , C08G18/706 , C08G18/797 , C08G18/798 , C08G18/80 , C08K3/011 , C09D167/00 , C09D167/02 , Y10T428/31681
摘要： This invention offers a method for forming multilayer coating film by successively applying onto a coating object a water-based first coloring paint, water-based second coloring paint and clear paint, and simultaneously baking the resultant first coloring coating film, second coloring coating film and clear coating film, in which the water-based first coloring paint (A) comprises polyester resin and curing agent, the polyester resin containing benzene ring and cyclohexane ring in its molecules, their combined content in the polyester resin being within a range of 1.0-2.2 mols/kg (solid resin content); and that the curing agent is at least one compound selected from the group consisting of isocyanate group-containing compound, oxazoline group-containing compound, carbodiimide group-containing compound, hydrazide group-containing compound and semicarbazide group-containing compound. According to this method, multilayer coating film excelling in smoothness, distinctness of image, chipping resistance and water resistance can be formed by 3-coat-1-bake system.
摘要翻译：本发明提供一种通过依次向涂布对象施加水性第一着色涂料，水性第二着色涂料和透明涂料来形成多层涂膜的方法，并同时烘烤得到的第一着色涂膜，第二着色涂膜和其中水性第一着色涂料（A）包含聚酯树脂和固化剂，分子中含有苯环和环己烷环的聚酯树脂，其在聚酯树脂中的组合含量在1.0〜 2.2摩尔/ kg（固体树脂含量）; 并且所述固化剂是选自含异氰酸酯基的化合物，含恶唑啉基的化合物，含碳二亚胺基的化合物，含酰肼基的化合物和含有氨基脲基的化合物中的至少一种化合物。根据该方法，可以通过3-涂层1烘烤系统形成平滑度，图像清晰度，耐崩裂性和耐水性优异的多层涂膜。

7. 发明授权

US07391077B2 Vertical type semiconductor device 失效
标题翻译：垂直型半导体器件
公开(公告)号：US07391077B2
公开(公告)日：2008-06-24
申请号：US10983658
申请日：2004-11-09
申请人： Kenichi Tokano , Atsuko Yamashita , Koichi Takahashi , Hideki Okumura , Shingo Sato
发明人： Kenichi Tokano , Atsuko Yamashita , Koichi Takahashi , Hideki Okumura , Shingo Sato
IPC分类号： H01L21/764
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0653 , H01L29/66712
摘要： Provided is a semiconductor device including a semiconductor substrate which includes a first semiconductor layer of a first conductivity and a pair of second semiconductor layers disposed on the first semiconductor layer and spaced apart from each other to form a trench therebetween, wherein the second semiconductor layer includes a first impurity-diffused region of the first conductivity extending from a lower surface toward an upper surface of the second semiconductor layer, and a second impurity-diffused region of a second conductivity which extends from the lower surface toward the upper surface and is adjacent to the first impurity-diffused region, an insulating layer covering a sidewall of the trench, and a cap layer which is in contact with the semiconductor substrate and covers an opening of the trench to form an enclosed space in the trench, a material of the cap layer being almost the same as that of the semiconductor substrate.
摘要翻译：提供了一种半导体器件，其包括半导体衬底，该半导体衬底包括第一导电性的第一半导体层和设置在第一半导体层上并且彼此间隔开以在其间形成沟槽的一对第二半导体层，其中第二半导体层包括从第一半导体层的下表面向上表面延伸的第一导电性的第一杂质扩散区和从下表面向上表面延伸的第二导电性的第二杂质扩散区，第一杂质扩散区域，覆盖沟槽的侧壁的绝缘层，以及与半导体衬底接触并覆盖沟槽的开口以在沟槽中形成封闭空间的覆盖层，帽的材料层几乎与半导体衬底的层相同。

8. 发明申请

US20060292805A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20060292805A1
公开(公告)日：2006-12-28
申请号：US11447114
申请日：2006-06-06
申请人： Keiko Kawamura , Shingo Sato
发明人： Keiko Kawamura , Shingo Sato
IPC分类号： H01L21/336 , H01L29/76
CPC分类号： H01L29/7802 , H01L29/165 , H01L29/4238 , H01L29/66348 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device is provided, which includes a first main electrode region having an upper main surface and a lower main surface; a drift layer of a first conductivity type formed on the upper main surface of the first main electrode region; a base layer of a second conductivity type formed on the drift layer; a second main electrode region of the first conductivity type formed on the base layer; a trench formed through the second main electrode region to the drift layer; a gate insulation film formed on an inner wall of the trench; and a gate electrode buried in the trench with the gate insulation film interposed therebetween, wherein the drift layer includes a graded region close to the first main electrode region, the graded region having band gap decreasing from the base layer toward the first main electrode region.
摘要翻译：提供一种半导体器件，其包括具有上主表面和下主表面的第一主电极区域; 形成在第一主电极区域的上主表面上的第一导电类型的漂移层; 形成在漂移层上的第二导电类型的基底层; 形成在基底层上的第一导电类型的第二主电极区域; 通过所述第二主电极区域形成到所述漂移层的沟槽; 形成在沟槽的内壁上的栅极绝缘膜; 以及埋设在所述沟槽中的栅电极，其间插入有所述栅极绝缘膜，其中所述漂移层包括靠近所述第一主电极区域的渐变区域，所述渐变区域具有从所述基极层朝向所述第一主电极区域的带隙。

9. 发明授权

US06438248B1 Hand-free apparatus 失效
标题翻译：免提装置
公开(公告)号：US06438248B1
公开(公告)日：2002-08-20
申请号：US09630232
申请日：2000-08-01
申请人： Tomohiko Kamimura , Satoru Fujiwara , Koji Nasu , Shingo Sato
发明人： Tomohiko Kamimura , Satoru Fujiwara , Koji Nasu , Shingo Sato
IPC分类号： H04R2500
CPC分类号： H04M1/15 , H04M1/05 , H04M1/6041
摘要： A hand-free apparatus having improved portability is disclosed. The apparatus includes an apparatus body including a transmitter and a receiver, an input/output cable connected with the transmitter and the receiver and extending outside from the apparatus body, a cable case incorporating a cable spool capable of taking up the cable and a retaining member capable of detachably retaining the apparatus body on the cable case. The apparatus body when retained by the retaining member extends along a peripheral face of the cable spool.
摘要翻译：公开了一种具有改进的便携性的免提装置。该装置包括：装置本体，包括发射器和接收器，与发射器和接收器连接的输入/输出电缆，并从设备主体向外延伸;电缆壳体，包括能够吸收电缆的电缆线轴和保持构件能够将设备主体可拆卸地保持在电缆壳体上。当由保持构件保持时的装置主体沿着电缆线轴的外周面延伸。

10. 发明授权

US08729805B2 Plasma generator and discharge device and reactor using plasma generator 有权
标题翻译：等离子发生器和使用等离子体发生器的放电装置和电抗器
公开(公告)号：US08729805B2
公开(公告)日：2014-05-20
申请号：US12812589
申请日：2009-01-19
申请人： Takashige Yagi , Hiroshi Makino , Shingo Sato
发明人： Takashige Yagi , Hiroshi Makino , Shingo Sato
IPC分类号： H01J7/24
CPC分类号： B01J19/088 , B01J2219/0869 , H05H1/2406 , H05H2001/2418
摘要： A plasma generator has a first member 2 containing a dielectric material, and an electrode group composed of a plurality of electrodes and including a first assembly 6 partially including a plurality of electrodes and a second assembly 7 partially including a plurality of electrodes. In accordance with an AC voltage, the first assembly 6 generates a plasma in a first space 23 contacting the first member 2. In accordance with a DC voltage, the second assembly 7 generates an electric field in a second space 24 contacting the first member 2 and communicating with the first space 23. At least one or more electrodes of a portion of the first assembly 6 and at least one or more electrodes of a portion of the second assembly 7 are provided on the surface of or in the inside of the first member 2.
摘要翻译：等离子体发生器具有包含介电材料的第一构件2和由多个电极组成的电极组，并且包括部分地包括多个电极的第一组件6和部分地包括多个电极的第二组件7。根据AC电压，第一组件6在与第一构件2接触的第一空间23中产生等离子体。根据DC电压，第二组件7在接触第一构件2的第二空间24中产生电场并且与第一空间23连通。第一组件6的一部分的至少一个或多个电极和第二组件7的一部分的至少一个或多个电极设置在第一组件6的第一面会员2。

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