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1. 发明申请

US20050122775A1 Novolatile semiconductor memory device and manufacturing process of the same 失效
标题翻译：非易失性半导体存储器件及其制造工艺相同
公开(公告)号：US20050122775A1
公开(公告)日：2005-06-09
申请号：US11033142
申请日：2005-01-12
申请人： Mitsumasa Koyanagi , Masaaki Takata , Shinji Kondoh
发明人： Mitsumasa Koyanagi , Masaaki Takata , Shinji Kondoh
IPC分类号： C23C14/06 , H01L21/28 , H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792 , G11C16/04
CPC分类号： H01L29/42348 , B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L29/42332 , H01L29/66825 , H01L29/66833 , H01L29/7883 , H01L29/7888 , Y10S977/773 , Y10S977/936
摘要： There is provided a nonvolatile semiconductor memory device which can shorten data writing and erasing time, significantly improve the endurance characteristic and be activated with low power consumption. The nonvolatile semiconductor memory device comprises an insulating layer 3b with electric insulation, wherein, a charge retention layer 3 formed adjacent to a tunnel insulating film 2 contains nano-particles 3a comprised of a compound which is constituted from at least one single-element substance or chemical compound having a particle diameter of at most 5 nm functions as a floating gate, and which are independently dispersed with a density of from 10+12 to 10+14 particles per square centimeter.
摘要翻译：提供了可以缩短数据写入和擦除时间的非易失性半导体存储器件，显着提高耐久特性并以低功耗被激活。非易失性半导体存储器件包括具有电绝缘性的绝缘层3b，其中与隧道绝缘膜2相邻形成的电荷保持层3包含纳米粒子3a，该纳米粒子由由至少一种单元素物质构成的化合物或粒径为5nm以下的化合物作为浮栅，分别独立地分散，密度为10〜12个/ 10〜14个/ 平方厘米。

2. 发明授权

US07820515B2 Nonvolatile semiconductor memory element excellent in charge retention properties and process for producing the same 有权
标题翻译：电荷保持性优异的非挥发性半导体存储元件及其制造方法
公开(公告)号：US07820515B2
公开(公告)日：2010-10-26
申请号：US12046763
申请日：2008-03-12
申请人： Masaaki Takata , Mitsumasa Koyanagi
发明人： Masaaki Takata , Mitsumasa Koyanagi
IPC分类号： H01L21/336
CPC分类号： H01L21/28273 , H01L21/3105 , H01L21/316 , H01L21/31645 , H01L29/42332 , H01L29/66825 , H01L29/7881
摘要： A process for producing a nonvolatile semiconductor memory having a mixed or laminated structure of a hardly oxidizable material composed of a hardly oxidizable element having Gibbs' free energy for forming oxide higher than that of Si under the same temperature condition at 1 atm and in temperature range of 0° C. to 1,200° C. and an oxide of an easily oxidizable material composed of an element having Gibbs' free energy for forming oxide lower than that of Si under the same temperature condition at 1 atm in the temperature range and Si. The process includes forming a portion of the hardly oxidizable material and a portion of the oxide by physical forming method and carrying out heat treatment in oxidizing and reducing gas mixture. The ratio of the gases and the temperature are controlled so that the hardly oxidizable material is reduced and the oxide is oxidized in the temperature range.
摘要翻译：一种制造非易失性半导体存储器的方法，该非易失性半导体存储器具有在1atm和在温度范围内的相同温度条件下由具有吉布斯自由能的几乎不可氧化的元素组成的几乎不可氧化的材料的混合或层压结构，以形成高于Si的氧化物的氧化物 0℃〜1200℃的温度范围内的容易氧化材料的氧化物以及在相同的温度条件下在1atm的温度范围和Si下由具有吉布斯自由能的元素组成的氧化物，以形成低于Si的氧化物的氧化物。该方法包括通过物理形成方法形成一部分难以氧化的材料和一部分氧化物，并在氧化和还原气体混合物中进行热处理。控制气体和温度的比例，使得难以氧化的材料减少，氧化物在温度范围内被氧化。

3. 发明授权

US07550802B2 Nonvolatile semiconductor memory device and manufacturing process of the same 失效
标题翻译：非易失性半导体存储器件及其制造工艺相同
公开(公告)号：US07550802B2
公开(公告)日：2009-06-23
申请号：US11033142
申请日：2005-01-12
申请人： Mitsumasa Koyanagi , Masaaki Takata
发明人： Mitsumasa Koyanagi , Masaaki Takata
IPC分类号： H01L29/792
CPC分类号： H01L29/42348 , B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L29/42332 , H01L29/66825 , H01L29/66833 , H01L29/7883 , H01L29/7888 , Y10S977/773 , Y10S977/936
摘要： A nonvolatile semiconductor memory device which can shorten data writing and erasing time, significantly improve the endurance characteristic and be activated with low power consumption includes an insulating layer with electric insulation, wherein, a charge retention layer formed adjacent to a tunnel insulating film contains nano-particles comprised of a compound which is constituted from at least one single-element substance or chemical compound having a particle diameter of at most 5 nm functions as a floating gate, and which are independently dispersed with a density of from 10+12 to 10+14 particles per square centimeter.
摘要翻译：可以缩短数据写入和擦除时间，显着提高耐久特性并且以低功耗被激活的非易失性半导体存储器件包括具有电绝缘的绝缘层，其中，与隧道绝缘膜相邻形成的电荷保持层包含纳米 - 由至少一种单一元素物质或粒径为5nm以下的化合物构成的化合物构成的微粒用作浮栅，独立地以10 + 12〜10+的密度分散，每平方厘米14颗颗粒。

4. 发明授权

US07355238B2 Nonvolatile semiconductor memory device having nanoparticles for charge retention 失效
标题翻译：具有用于电荷保留的纳米颗粒的非易失性半导体存储器件
公开(公告)号：US07355238B2
公开(公告)日：2008-04-08
申请号：US11003421
申请日：2004-12-06
申请人： Masaaki Takata , Mitsumasa Koyanagi
发明人： Masaaki Takata , Mitsumasa Koyanagi
IPC分类号： H01L29/76
CPC分类号： H01L29/42332 , Y10S977/943
摘要： A nonvolatile semiconductor memory device including a source region and a drain region formed on a surface of a semiconductor substrate, a channel-forming region formed so as to connect the source region and the drain region or so as to be sandwiched between the source region and the drain region, a tunnel insulating film formed in contact with the channel-forming region, a charge retention layer formed adjacently to the tunnel insulating film, a gate insulating film formed adjacently to the charge retention layer, and a control gate formed adjacently to the gate insulating film. The charge retention layer includes an insulating matrix having, per nonvolatile semiconductor memory device, one conductive nano-particle which is made of at least one single-element substance or chemical compound that functions as a floating gate.
摘要翻译：一种非易失性半导体存储器件，包括形成在半导体衬底的表面上的源极区域和漏极区域，形成为连接源极区域和漏极区域的沟道形成区域，以夹在源极区域和源极区域之间，漏极区域，与沟道形成区域形成的隧道绝缘膜，与隧道绝缘膜相邻形成的电荷保持层，与电荷保持层相邻形成的栅极绝缘膜，以及与栅极绝缘膜相邻形成的控制栅极栅极绝缘膜。电荷保持层包括绝缘矩阵，每个非易失性半导体存储器件具有由至少一个用作浮栅的单一元素物质或化合物制成的导电纳米颗粒。

5. 发明申请

US20070155099A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING EXCELLENT CHARGE RETENTION AND MANUFACTURING PROCESS OF THE SAME 审中-公开
标题翻译：具有优异充电保持性及其制造工艺的非挥发性半导体存储器件
公开(公告)号：US20070155099A1
公开(公告)日：2007-07-05
申请号：US11685077
申请日：2007-03-12
申请人： Masaaki Takata , Mitsumasa Koyanagi
发明人： Masaaki Takata , Mitsumasa Koyanagi
IPC分类号： H01L21/336 , H01L21/3205
CPC分类号： H01L29/42332 , Y10S977/943
摘要： There has been a problem in conventional Si-type floating-gate type nonvolatile semiconductor memory devices that the charge retention characteristic is low due to insufficiently large electron affinity of Si, therefore improvement of the memory performances, such as scaling down of a memory cell and increasing operation speed, have been difficult to be achieved due to the essential problem. In order to solve the above problem, in the nonvolatile semiconductor memory device of the present invention, a material having large work function or large electron affinity or a material having a work function close to that of semiconductor substrate or of a control gate, is employed for a floating gate retaining charges. Further, an amorphous material having small electron affinity for an insulating matrix is used. Further, at a time of deposition of charge retention layer, the supply ratio of the nano-particle material and the insulating matrix material, such as the mixture ratio of materials of both phases in a target in a sputtering method, is adjusted. By these methods, the charge retention characteristic of the floating-gate type nonvolatile semiconductor memory device can be improved, and the above-mentioned problem of the nonvolatile semiconductor memory device can be solved.
摘要翻译：在常规的Si型浮栅型非易失性半导体存储器件中存在由于Si的电子亲和力不足而导致的电荷保持特性低的问题，因此存储器性能的改善，例如存储器单元的缩小和提高运行速度，由于基本问题而难以实现。为了解决上述问题，在本发明的非易失性半导体存储器件中，使用具有大功函数或大电子亲和性的材料或具有接近半导体衬底或控制栅的功函数的材料为浮门保留费用。此外，使用对绝缘基体具有小的电子亲和力的无定形材料。此外，在电荷保持层的沉积时，调整纳米粒子材料和绝缘基体材料的供给比例，例如溅射法中的靶中的两相的材料的混合比例。通过这些方法，可以提高浮栅型非易失性半导体存储器件的电荷保持特性，并且可以解决上述非易失性半导体存储器件的问题。

6. 发明申请

US20060118853A1 Nonvolatile semiconductor memory device having excellent charge retention and manufacturing process of the same 失效
标题翻译：非易失性半导体存储器件具有优异的电荷保持率及其制造工艺
公开(公告)号：US20060118853A1
公开(公告)日：2006-06-08
申请号：US11003421
申请日：2004-12-06
申请人： Masaaki Takata , Mitsumasa Koyanagi
发明人： Masaaki Takata , Mitsumasa Koyanagi
IPC分类号： H01L29/76
CPC分类号： H01L29/42332 , Y10S977/943
摘要： There has been a problem in conventional Si-type floating-gate type nonvolatile semiconductor memory devices that the charge retention characteristic is low due to insufficiently large electron affinity of Si, therefore improvement of the memory performances, such as scaling down of a memory cell and increasing operation speed, have been difficult to be achieved due to the essential problem. In order to solve the above problem, in the nonvolatile semiconductor memory device of the present invention, a material having large work function or large electron affinity or a material having a work function close to that of semiconductor substrate or of a control gate, is employed for a floating gate retaining charges. Further, an amorphous material having small electron affinity for an insulating matrix is used. Further, at a time of deposition of charge retention layer, the supply ratio of the nano-particle material and the insulating matrix material, such as the mixture ratio of materials of both phases in a target in a sputtering method, is adjusted. By these methods, the charge retention characteristic of the floating-gate type nonvolatile semiconductor memory device can be improved, and the above-mentioned problem of the nonvolatile semiconductor memory device can be solved.
摘要翻译：在常规的Si型浮栅型非易失性半导体存储器件中存在由于Si的电子亲和力不足而导致的电荷保持特性低的问题，因此存储器性能的改善，例如存储器单元的缩小和增加运行速度，由于基本问题而难以实现。为了解决上述问题，在本发明的非易失性半导体存储器件中，使用具有大功函数或大电子亲和性的材料或具有接近半导体衬底或控制栅的功函数的材料为浮门保留费用。此外，使用对绝缘基体具有小的电子亲和力的无定形材料。此外，在电荷保持层的沉积时，调整纳米粒子材料和绝缘基体材料的供给比例，例如溅射法中的靶中的两相的材料的混合比例。通过这些方法，可以提高浮栅型非易失性半导体存储器件的电荷保持特性，并且可以解决上述非易失性半导体存储器件的问题。

7. 发明授权

US08498056B2 Synthesized silica glass for optical component 有权
标题翻译：用于光学部件的合成石英玻璃
公开(公告)号：US08498056B2
公开(公告)日：2013-07-30
申请号：US13367780
申请日：2012-02-07
申请人： Masaaki Takata , Long Shao , Kei Iwata , Tomonori Ogawa
发明人： Masaaki Takata , Long Shao , Kei Iwata , Tomonori Ogawa
IPC分类号： G02B27/12 , C03B11/08 , C03B23/22
CPC分类号： C03B19/1453 , C03B2201/04 , G03F7/70966 , Y02P40/57
摘要： The present invention provides a synthetic silica glass for an optical member in which not only a fast axis direction in an optical axis direction is controlled, and a birefringence in an off-axis direction is reduced, but a magnitude of a birefringence in the optical axis direction is controlled to an arbitrary value, such that an average value of a value BR cos2θxy defined from a birefringence BR and a fast axis direction θxy as measured from a parallel direction to the principal optical axis direction is defined as an average birefringence AveBR cos2θxy, and when a maximum value of a birefringence measured from a vertical direction to the principal optical axis direction of the optical member is defined as a maximum birefringence BRmax in an off-axis direction, the following expression (1-1) and expression (2-1) are established: −1.0≦AveBR cos2θxy
摘要翻译：本发明提供一种用于光学构件的合成石英玻璃，其不仅控制光轴方向上的快轴方向，并且减少偏轴双折射，而且在光轴上具有双折射的大小方向被控制为任意值，使得从平行方向到主光轴方向测量的从双折射BR和快轴方向三角形定义的值BR cos2thetaxy的平均值被定义为平均双折射AveBR cos2thetaxy，并且当将从光学构件的垂直方向到主光轴方向测量的双折射的最大值定义为离轴方向上的最大双折射BRmax时，下列表达式（1-1）和表达式（2- 1）建立：-1.0@AveBR cos2thetaxy <0.0（1-1）0.0 @ BRmax @ 1.0（2-1）。

8. 发明授权

US07245719B2 Recording method and apparatus, optical disk, and computer-readable storage medium 有权
标题翻译：记录方法和装置，光盘和计算机可读存储介质
公开(公告)号：US07245719B2
公开(公告)日：2007-07-17
申请号：US09893504
申请日：2001-06-29
申请人： Hirotsugu Kawada , Noboru Katta , Katsuhiko Miwa , Yoshihiro Mori , Masaaki Takata
发明人： Hirotsugu Kawada , Noboru Katta , Katsuhiko Miwa , Yoshihiro Mori , Masaaki Takata
IPC分类号： H04N7/167 , G06F12/14 , G11B7/24
CPC分类号： G11B20/0021 , G06F21/00 , G11B20/00086 , G11B20/00094 , G11B20/00166 , G11B20/00253 , G11B20/00449 , H04N5/85 , H04N5/913 , H04N9/8042 , H04N9/8205 , H04N2005/91364
摘要： A recording apparatus records movie content onto a DVD. The movie content is encrypted using a different encryption method depending on whether the DVD is intended for consumer use or industrial use. If the DVD is for consumer use, a VIDEO_TS directory is created on the DVD, and the encrypted movie content is recorded in the VIDEO_TS directory. If the DVD is for industrial use, a VIDEO_TS directory and an EWCPS_TS directory are created on the DVD, and the encrypted movie content and message data are recorded respectively in the EWCPS_TS directory and the VIDEO_TS directory. The message data indicates that the movie content cannot be played back by consumer DVD players.
摘要翻译：记录装置将电影内容记录到DVD上。使用不同的加密方式对电影内容进行加密，这取决于DVD是用于消费者还是工业用途。如果DVD用于消费者使用，则在DVD上创建VIDEO_TS目录，并将加密的电影内容记录在VIDEO_TS目录中。如果DVD用于工业用途，则在DVD上创建VIDEO_TS目录和EWCPS_TS目录，并将加密的电影内容和消息数据分别记录在EWCPS_TS目录和VIDEO_TS目录中。消息数据表示消费者DVD播放器不能播放电影内容。

9. 发明授权

US06988886B2 Thermal treatment system for semiconductors 失效
标题翻译：半导体热处理系统
公开(公告)号：US06988886B2
公开(公告)日：2006-01-24
申请号：US10809705
申请日：2004-03-26
申请人： Masaaki Takata , Nobuo Kageyama , Susumu Otaguro , Jiro Nishihama
发明人： Masaaki Takata , Nobuo Kageyama , Susumu Otaguro , Jiro Nishihama
IPC分类号： F27D1/18
CPC分类号： C23C16/4409 , C23C16/46 , C30B33/02 , H01L21/67109
摘要： A thermal treatment system for semiconductors comprises an outer tube made of silicon carbide, a base hermetically supporting a lower portion of the outer tube, a lid selectively opening and closing an opening formed in a central portion of the base, and a reactor wall surrounding an outer peripheral wall and the like of the outer tube and having a heater provided on an inner side, wherein an annular sealing member and an annular supporting member are interposed between the outer tube and the base, and wherein the supporting member has an effective heat transfer coefficient of 50 to 2,000 W/(m2·K).
摘要翻译：一种用于半导体的热处理系统包括由碳化硅制成的外管，密封地支撑外管的下部的底座，选择性地打开和关闭形成在基座的中心部分中的开口的盖子和围绕外筒的外周壁等，并且具有设置在内侧的加热器，其中环形密封构件和环形支撑构件插入在外管和基座之间，并且其中支撑构件具有有效的热传递系数为50〜2000W /（m 2·K）。

10. 发明申请

US20050053890A1 Thermal treatment system for semiconductors 失效
标题翻译：半导体热处理系统
公开(公告)号：US20050053890A1
公开(公告)日：2005-03-10
申请号：US10809705
申请日：2004-03-26
申请人： Masaaki Takata , Nobuo Kageyama , Susumu Otaguro , Jiro Nishihama
发明人： Masaaki Takata , Nobuo Kageyama , Susumu Otaguro , Jiro Nishihama
IPC分类号： H01L21/324 , C23C16/44 , C23C16/46 , C30B33/02 , H01L21/00 , F27D1/00
CPC分类号： C23C16/4409 , C23C16/46 , C30B33/02 , H01L21/67109
摘要： A thermal treatment system for semiconductors comprises an outer tube made of silicon carbide, a base hermetically supporting a lower portion of the outer tube, a lid selectively opening and closing an opening formed in a central portion of the base, and a reactor wall surrounding an outer peripheral wall and the like of the outer tube and having a heater provided on an inner side, wherein an annular sealing member and an annular supporting member are interposed between the outer tube and the base, and wherein the supporting member has an effective heat transfer coefficient of 50 to 2,000 W/(m2·K).
摘要翻译：一种用于半导体的热处理系统包括由碳化硅制成的外管，密封地支撑外管的下部的底座，选择性地打开和关闭形成在基座的中心部分中的开口的盖子和围绕外筒的外周壁等，并且具有设置在内侧的加热器，其中环形密封构件和环形支撑构件插入在外管和基座之间，并且其中支撑构件具有有效的热传递系数为50至2,000W /（m 2 K）。

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