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1. 发明授权

US06797968B2 Ion beam processing method and apparatus therefor 有权
标题翻译：离子束处理方法及其设备
公开(公告)号：US06797968B2
公开(公告)日：2004-09-28
申请号：US10329560
申请日：2002-12-27
申请人： Mitsukuni Tsukihara , Yoshitaka Amano , Mitsuaki Kabasawa , Michiro Sugitani , Hiroki Murooka , Hiroshi Matsushita
发明人： Mitsukuni Tsukihara , Yoshitaka Amano , Mitsuaki Kabasawa , Michiro Sugitani , Hiroki Murooka , Hiroshi Matsushita
IPC分类号： H01J3708
CPC分类号： H01J37/3171 , H01J37/3007
摘要： An ion beam processing apparatus comprises a beam line vacuum chamber from an ion source to a processing chamber. The apparatus further comprises a beam line structure for transporting ion beam from the ion source through the beam line vacuum chamber to the processing chamber. A mass analysis magnet unit is arranged from the outside in a partial section of the beam line vacuum chamber. An effective magnetic field area of the mass analysis magnet unit is disposed in a partial section of the beam line structure. Continuous cusp field forming magnet apparatuses are arranged at the series of beam line vacuum chamber part of the beam line structure to confine ion beam by forming continuous cusp fields.
摘要翻译：离子束处理装置包括从离子源到处理室的束线真空室。该装置还包括用于将来自离子源的离子束通过束线真空室输送到处理室的束线结构。在束线真空室的部分部分中从外部布置质量分析磁体单元。质量分析磁体单元的有效磁场面积设置在束线结构的局部剖面中。连续尖点场形成磁体装置布置在束线结构的束线真空室系列的一部分中，以通过形成连续尖点场来限制离子束。

2. 发明授权

US06794661B2 Ion implantation apparatus capable of increasing beam current 有权
标题翻译：离子注入装置能够增加束流
公开(公告)号：US06794661B2
公开(公告)日：2004-09-21
申请号：US10118064
申请日：2002-04-09
申请人： Mitsukuni Tsukihara , Mitsuaki Kabasawa , Michiro Sugitani , Hiroki Murooka , Hiroshi Matsushita
发明人： Mitsukuni Tsukihara , Mitsuaki Kabasawa , Michiro Sugitani , Hiroki Murooka , Hiroshi Matsushita
IPC分类号： H01J37317
CPC分类号： H01J37/3171 , G21K1/08 , H01J2237/004
摘要： In an ion implantation apparatus according to the present invention, ions are extracted from an ion source with the aid of extraction electrodes. The ions thus extracted are analyzed in mass by means of a mass analysis magnet apparatus and a mass analysis slit, so that the required ions are implanted in a substrate. Magnets for generating cusp magnetic fields are serially disposed along an ion beam line extending from the front part to the rear part of the mass analysis magnet apparatus.
摘要翻译：在根据本发明的离子注入装置中，借助于提取电极从离子源提取离子。通过质量分析磁体装置和质量分析狭缝对由此提取的离子进行质量分析，从而将所需的离子注入到基板中。用于产生尖点磁场的磁体沿着从质量分析磁铁装置的前部延伸到后部的离子束线串联设置。

3. 发明授权

US07138641B2 Beam deflecting method, beam deflector for scanning, ion implantation method, and ion implantation system 有权
标题翻译：光束偏转方法，扫描光束偏转器，离子注入法和离子注入系统
公开(公告)号：US07138641B2
公开(公告)日：2006-11-21
申请号：US11139490
申请日：2005-05-31
申请人： Hiroshi Matsushita , Mitsuaki Kabasawa , Yoshitaka Amano , Yasuhiko Kimura , Mitsukuni Tsukihara , Junichi Murakami
发明人： Hiroshi Matsushita , Mitsuaki Kabasawa , Yoshitaka Amano , Yasuhiko Kimura , Mitsukuni Tsukihara , Junichi Murakami
IPC分类号： G01N23/00 , G21K7/00 , G21G5/00
CPC分类号： H01J37/1477 , H01J37/3171
摘要： A beam deflector for scanning performs deflecting of a charged particle beam having a regular trajectory in a vacuum space to thereby periodically change the trajectory of the charged particle beam. The beam deflector comprises a pair of deflection electrodes disposed so as to confront each inner electrode surface having a symmetrical concave extending in a direction of a beam trajectory.
摘要翻译：用于扫描的光束偏转器执行在真空空间中具有规则轨迹的带电粒子束的偏转，从而周期性地改变带电粒子束的轨迹。光束偏转器包括一对偏转电极，其设置成面对每个内电极表面，其具有沿光束轨迹的方向延伸的对称凹部。

4. 发明授权

US07982192B2 Beam processing apparatus 有权
标题翻译：梁加工设备
公开(公告)号：US07982192B2
公开(公告)日：2011-07-19
申请号：US12106735
申请日：2008-04-21
申请人： Mitsukuni Tsukihara , Mitsuaki Kabasawa , Hiroshi Matsushita , Takanori Yagita , Yoshitaka Amano , Yoshito Fujii
发明人： Mitsukuni Tsukihara , Mitsuaki Kabasawa , Hiroshi Matsushita , Takanori Yagita , Yoshitaka Amano , Yoshito Fujii
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/1477 , H01J2237/0042 , H01J2237/028
摘要： In a beam processing apparatus including a beam scanner having a two electrodes type deflection scanning electrode, the beam scanner further includes shielding suppression electrode assemblies respectively at vicinities of upstream side and downstream side of the two electrodes type deflection scanning electrode and having openings in a rectangular shape for passing a charged particle beam. Each of the shielding suppression electrode assemblies is an assembly electrode comprising one sheet of a suppression electrode and two sheets of shielding ground electrodes interposing the suppression electrode. A total of front side portions and rear side portions of the two electrodes type deflection scanning electrode is shielded by the two sheets of shielding ground electrodes.
摘要翻译：在包括具有两电极型偏转扫描电极的光束扫描器的光束处理装置中，光束扫描器还包括分别在两电极型偏转扫描电极的上游侧和下游侧的附近的屏蔽抑制电极组件，并具有矩形的开口用于通过带电粒子束的形状。每个屏蔽抑制电极组件是包括一片抑制电极和插入抑制电极的两片屏蔽接地电极的组装电极。两电极型偏转扫描电极的前侧部分和后侧部分被两片屏蔽接地电极屏蔽。

5. 发明申请

US20060113490A1 Beam deflecting method, beam deflector for scanning, ion implantation method, and ion implantation system 有权
公开(公告)号：US20060113490A1
公开(公告)日：2006-06-01
申请号：US11139490
申请日：2005-05-31
申请人： Hiroshi Matsushita , Mitsuaki Kabasawa , Yoshitaka Amano , Yasuhiko Kimura , Mitsukuni Tsukihara , Junichi Murakami
发明人： Hiroshi Matsushita , Mitsuaki Kabasawa , Yoshitaka Amano , Yasuhiko Kimura , Mitsukuni Tsukihara , Junichi Murakami
IPC分类号： H01J37/317 , H01J37/147
CPC分类号： H01J37/1477 , H01J37/3171
摘要： A beam deflector for scanning performs deflecting of a charged particle beam having a regular trajectory in a vacuum space to thereby periodically change the trajectory of the charged particle beam. The beam deflector comprises a pair of deflection electrodes disposed so as to confront each inner electrode surface having a symmetrical concave extending in a direction of a beam trajectory.

6. 发明授权

US07687782B2 Electrostatic beam deflection scanner and beam deflection scanning method 有权
标题翻译：静电束偏转扫描仪和光束偏转扫描方法
公开(公告)号：US07687782B2
公开(公告)日：2010-03-30
申请号：US11806127
申请日：2007-05-30
申请人： Mitsukuni Tsukihara , Mitsuaki Kabasawa , Yoshitaka Amano , Hiroshi Matsushita
发明人： Mitsukuni Tsukihara , Mitsuaki Kabasawa , Yoshitaka Amano , Hiroshi Matsushita
IPC分类号： G21K1/087 , H01J3/18
CPC分类号： H01J37/153 , H01J37/1477 , H01J37/3171 , H01J2237/30477
摘要： A beam deflection scanner performs reciprocating deflection scanning with an ion beam or a charged particle beam to thereby periodically change a beam trajectory and comprises a pair of scanning electrodes installed so as to be opposed to each other with the beam trajectory interposed therebetween and a pair of correction electrodes installed in a direction perpendicular to an opposing direction of the pair of scanning electrodes, with the beam trajectory interposed therebetween, and extending along a beam traveling axis. Positive and negative potentials are alternately applied to the pair of scanning electrodes, while a correction voltage is constantly applied to the pair of correction electrodes. A correction electric field produced by the pair of correction electrodes is exerted on the ion beam or the charged particle beam passing between the pair of scanning electrodes at the time of switching between the positive and negative potentials.
摘要翻译：光束偏转扫描器用离子束或带电粒子束进行往复偏转扫描，从而周期性地改变光束轨迹，并且包括一对扫描电极，其被安装成彼此相对，并且光束轨迹插入其间，校正电极，其安装在垂直于该对扫描电极的相反方向的方向上，其中光束轨迹插入其间，并且沿着光束移动轴线延伸。正电位和负电位交替施加到该对扫描电极，同时校正电压不断地施加到该对校正电极。在正电位和负电位之间切换时，由一对校正电极产生的校正电场施加在通过该对扫描电极的离子束或带电粒子束之间。

7. 发明申请

US20080067404A1 Electrostatic beam deflection scanner and beam deflection scanning method 有权
标题翻译：静电束偏转扫描仪和光束偏转扫描方法
公开(公告)号：US20080067404A1
公开(公告)日：2008-03-20
申请号：US11806127
申请日：2007-05-30
申请人： Mitsukuni Tsukihara , Mitsuaki Kabasawa , Yoshitaka Amano , Hiroshi Matsushita
发明人： Mitsukuni Tsukihara , Mitsuaki Kabasawa , Yoshitaka Amano , Hiroshi Matsushita
IPC分类号： H01J3/14
CPC分类号： H01J37/153 , H01J37/1477 , H01J37/3171 , H01J2237/30477
摘要： A beam deflection scanner performs reciprocating deflection scanning with an ion beam or a charged particle beam to thereby periodically change a beam trajectory and comprises a pair of scanning electrodes installed so as to be opposed to each other with the beam trajectory interposed therebetween and a pair of correction electrodes installed in a direction perpendicular to an opposing direction of the pair of scanning electrodes, with the beam trajectory interposed therebetween, and extending along a beam traveling axis. Positive and negative potentials are alternately applied to the pair of scanning electrodes, while a correction voltage is constantly applied to the pair of correction electrodes. A correction electric field produced by the pair of correction electrodes is exerted on the ion beam or the charged particle beam passing between the pair of scanning electrodes at the time of switching between the positive and negative potentials.
摘要翻译：光束偏转扫描器用离子束或带电粒子束进行往复偏转扫描，从而周期性地改变光束轨迹，并且包括一对扫描电极，其被安装成彼此相对，并且光束轨迹插入其间，校正电极，其安装在垂直于该对扫描电极的相反方向的方向上，其中光束轨迹插入其间，并且沿着光束移动轴线延伸。正电位和负电位交替施加到该对扫描电极，同时校正电压不断地施加到该对校正电极。在正电位和负电位之间切换时，由一对校正电极产生的校正电场施加在通过该对扫描电极的离子束或带电粒子束之间。

8. 发明授权

US06573517B1 Ion implantation apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US06573517B1
公开(公告)日：2003-06-03
申请号：US09629622
申请日：2000-07-31
申请人： Michiro Sugitani , Mitsukuni Tsukihara , Yoshitomo Hidaka , Mitsuaki Kabasawa , Kouji Inada
发明人： Michiro Sugitani , Mitsukuni Tsukihara , Yoshitomo Hidaka , Mitsuaki Kabasawa , Kouji Inada
IPC分类号： H01J3708
CPC分类号： G21K1/08 , H01J37/147 , H01J37/3171 , H01J2237/31705
摘要： An ion injecting apparatus has an ion source, a mass-analyzing magnet, an accelerating/decelerating element, and deflecting elements. The mass analyzing magnet mass-analyzes an ion beam extracted from the ion source. The accelerating/de-celerating element accelerates and decelerates the ion beam at a post-stage. The deflecting elements are arranged between the mass analyzing magnet and the accelerating/decelerating element. Each direction angle of the deflecting element is determined such that a final beam trajectory in the predetermined area before being introduced into a wafer substrate is matched to each other in both an operating mode and a non-operating mode of the deflecting elements.
摘要翻译：离子注入装置具有离子源，质量分析用磁体，加速/减速元件以及偏转元件。质量分析磁体对从离子源提取的离子束进行质量分析。加速/去纤维元件在后期加速和减速离子束。偏转元件布置在质量分析磁体和加速/减速元件之间。偏转元件的每个方向角被确定为使得在被引入晶片衬底之前的预定区域中的最终光束轨迹在偏转元件的操作模式和非操作模式中彼此匹配。

9. 发明授权

US06984833B2 Ion implanter and method for controlling the same 失效
标题翻译：离子注入机及其控制方法
公开(公告)号：US06984833B2
公开(公告)日：2006-01-10
申请号：US10864343
申请日：2004-06-10
申请人： Makoto Sano , Michiro Sugitani , Mitsuaki Kabasawa , Mitsukuni Tsukihara
发明人： Makoto Sano , Michiro Sugitani , Mitsuaki Kabasawa , Mitsukuni Tsukihara
IPC分类号： H01J37/304 , H01J37/317
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/31703
摘要： The present invention is applied to an ion implanter provided with a vacuum pressure compensation mechanism. The pressure compensation mechanism samples measured beam currents and vacuum pressures in the vicinity of wafers in preliminary implantation and stores function parameters in a memory unit which are obtained by calculating parameters of a predetermined function by fitting the relationship between the measured beam currents and the vacuum pressures. In actual implantation, the pressure compensation mechanism corrects the measured beam current using the function parameters stored as a function of the vacuum pressure, and based on the corrected beam current, the dosage control is performed. In the present invention, an actual beam loss is compensated for based on the estimation from a pressure in the vicinity of the wafers in a region downstream of a mass analysis slit.
摘要翻译：本发明适用于设置有真空压力补偿机构的离子注入机。压力补偿机构对初步注入中的晶片附近的测量束电流和真空压力进行采样，并将功能参数存储在存储器单元中，该功能参数通过计算测量的光束电流和真空压力之间的关系来计算预定功能的参数而获得。在实际植入中，压力补偿机构使用作为真空压力的函数存储的功能参数来校正测量的束电流，并且基于校正的束电流，执行剂量控制。在本发明中，基于从质量分析狭缝下游的区域中的晶片附近的压力的估计来补偿实际的光束损失。

10. 发明授权

US06635889B2 Ion implantation apparatus suited for low energy ion implantation and tuning method for ion source system thereof 有权
公开(公告)号：US06635889B2
公开(公告)日：2003-10-21
申请号：US10050843
申请日：2002-01-18
申请人： Mitsukuni Tsukihara , Mitsuaki Kabasawa , Yuji Takahashi , Michiro Sugitani
发明人： Mitsukuni Tsukihara , Mitsuaki Kabasawa , Yuji Takahashi , Michiro Sugitani
IPC分类号： H01J3708
CPC分类号： H01J37/3171 , H01J37/08
摘要： An ion implantation apparatus includes an ion source for generating ions, an extraction electrode for extracting the ions from the ion source by the action of an extraction electric field, and a mass analysis magnet for deflecting or bending the trajectory of an ion beam extracted by the extraction electrode. The ions that have passed through the mass analysis magnet are implanted into a target. The ion implantation apparatus further includes a multi-axis driving mechanism for moving the ion source. The multi-axis driving mechanism changes the relative positional relationship between the ion source and the extraction electrode.

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