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    • 4. 发明授权
    • Polishing pad and polishing device
    • 抛光垫和抛光装置
    • US06362107B1
    • 2002-03-26
    • US09831292
    • 2001-05-08
    • Kuniyasu ShiroHisashi MinamiguchiTetsuo Oka
    • Kuniyasu ShiroHisashi MinamiguchiTetsuo Oka
    • H01L21302
    • B24B37/24Y10S438/959
    • The present invention relates to a polishing pad which is characterized in that it has a polishing layer of rubber A-type microhardness at least 80° and a cushioning layer of bulk modulus at least 40 MPa and tensile modulus in the range 0.1 MPa to 20 MPa, and to a polishing device which is characterized in that a semiconductor substrate is fixed to the polishing head, and an aforesaid polishing pad is fixed to the polishing platen so that the polishing layer faces the semiconductor substrate, and by rotating the aforesaid polishing head or the polishing platen, or both, the semiconductor substrate is polished. With the polishing device or polishing pad of the present invention for use in the mechanical planarizing process wherein the surface of the insulating layers or metal interconnects formed on a semiconductor substrate are smoothened, it is possible to uniformly planarize the entire semiconductor face and perform uniform polishing close up to the wafer edge and, furthermore, it is possible to provide a technique for achieving both uniformity and planarity under conditions of high platen rotation rate.
    • 抛光垫技术领域本发明涉及一种抛光垫,其特征在于,具有橡胶A型显微硬度至少为80°的抛光层和体积弹性模量至少为40MPa的缓冲层,拉伸模量为0.1MPa〜20MPa 以及研磨装置,其特征在于,将半导体基板固定在研磨头上,将上述研磨垫固定在研磨台板上,使得研磨层面向半导体基板,通过旋转上述研磨头或 研磨台板或二者半导体衬底被抛光。通过本发明的抛光装置或抛光垫用于机械平面化处理中,其中形成在半导体衬底上的绝缘层或金属互连件的表面平滑化, 可以使整个半导体面均匀平坦化,并且在晶片边缘附近进行均匀的抛光,此外是 可能提供在高压板旋转速度的条件下实现均匀性和平面性的技术。