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    • 2. 发明授权
    • Semiconductor device with contact hole
    • 具有接触孔的半导体器件
    • US5656841A
    • 1997-08-12
    • US545398
    • 1995-10-19
    • Hirofumi WatanabeKaihei IsshikiTetsurou TanigawaYasuyuki ShindouKatsunari Hanaoka
    • Hirofumi WatanabeKaihei IsshikiTetsurou TanigawaYasuyuki ShindouKatsunari Hanaoka
    • H01L23/522H01L21/768H01L21/8238H01L27/092H01L29/78H01L27/11
    • H01L21/768H01L2924/0002Y10S257/903
    • In a manufacturing method of a semiconductor device, a gate insulating film is grown in an active region. Thereafter, an N-type polysilicon film is formed on the gate insulating film and is patterned so that a gate electrode and a polysilicon electrode are formed. Next, arsenic ions are implanted onto entire faces of the gate and polysilicon electrodes so that a source-drain region is formed on a substrate. An interlayer insulating film is then formed on an entire face of the source-drain region, etc. Thereafter, a contact hole is formed on a drain region in a position in which the drain region partially overlaps the polysilicon electrode. A surface portion of the polysilicon electrode is exposed into the contact hole. Thereafter, phosphoric ions are implanted through the contact hole with the interlayer insulating film as a mask. The implanted ions are thermally processed to activate these implanted ions. Thereafter, metal wiring is formed. Thus, resistance of a common contact having s three-dimensional structure is reduced.
    • 在半导体器件的制造方法中,在有源区域中生长栅极绝缘膜。 此后,在栅极绝缘膜上形成N型多晶硅膜,并形成栅电极和多晶硅电极。 接下来,将砷离子注入到栅极和多晶硅电极的整个表面上,从而在衬底上形成源极 - 漏极区域。 然后在源极 - 漏极区域的整个表面上形成层间绝缘膜等。此后,在漏极区域与多晶硅电极部分重叠的位置处的漏极区域上形成接触孔。 多晶硅电极的表面部分露出到接触孔中。 此后,通过与层间绝缘膜作为掩模的接触孔注入磷酸根离子。 将注入的离子热处理以激活这些注入的离子。 此后,形成金属布线。 因此,具有三维结构的普通接触的电阻降低。
    • 5. 发明授权
    • Ink-jet head
    • 喷墨头
    • US06354696B1
    • 2002-03-12
    • US09610807
    • 2000-07-06
    • Kaihei Isshiki
    • Kaihei Isshiki
    • B41J204
    • B41J2/14314
    • An ink-jet head includes nozzle holes for firing ink drops, ink flow paths with which the nozzle holes communicate, vibration plates which are walls of the ink flow paths, and electrodes facing the vibration plates, and firing the ink drops from the nozzle holes as a result of the vibration plates being deformed by electrostatic forces between the vibration plates and electrodes. The electrodes are provided on an electrode substrate having conductivity with an insulating layer provided therebetween, and the electrode substrate and the vibration plates are electrically connected together.
    • 喷墨头包括用于喷射墨滴的喷嘴孔,喷嘴孔连通的墨流路,作为墨流路的壁的振动板,面对振动板的电极,以及从喷嘴孔喷出墨滴 由于振动板由振动板和电极之间的静电力而变形。 电极设置在具有导电性的电极基板上,其间设置有绝缘层,并且电极基板和振动板电连接在一起。
    • 6. 发明授权
    • Method and an apparatus for performing three-dimensional exposure
    • 用于执行三维曝光的方法和装置
    • US4935774A
    • 1990-06-19
    • US342087
    • 1989-04-24
    • Yukihiro AgeishiKaihei Isshiki
    • Yukihiro AgeishiKaihei Isshiki
    • G03B27/54F16C17/02F16C33/14G03F1/76G03F7/20
    • G03F7/20
    • A method and an apparatus by use of three-dimensional photo-lithographic exposure employed for transferring an image to a recording medium among a series of processing works of practicing groove-processing, etc., corresponding to the image by utilization of photo-etching technology or the like, the apparatus for performing three-dimensional exposure comprising an optical unit, a work gripping assembly, a work moving mechanism, a control unit, and a main body frame, and the optical unit comprising a light source portion, a lens portion, and a reflection mirror, wherein the ultraviolet rays focused by the reflection mirror through a slit of a photo-mask onto a photo-sensitive coating film formed on an outer surface of a work loosely inserted into the through-hole of the reflection mirror together with a photo-mask surrounding an outer circumference of the work.
    • 通过利用光蚀刻技术对应于图像的一系列实施凹槽加工等的处理工艺中使用用于将图像转印到记录介质上的三维光刻曝光的方法和装置 用于执行三维曝光的装置,包括光学单元,工件夹持组件,作业移动机构,控制单元和主体框架,并且所述光学单元包括光源部分,透镜部分 和反射镜,其中由反射镜通过光掩模的狭缝聚焦的紫外线形成在松散地插入到反射镜的通孔中的工件的外表面上的感光涂膜上 与围绕工作的外圆周的照相面具。