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1. 发明专利

JP2010118707A Method of manufacturing solar panel 审中-公开
标题翻译：太阳能电池板的制造方法
公开(公告)号：JP2010118707A
公开(公告)日：2010-05-27
申请号：JP2010043189
申请日：2010-02-26
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SONOBE HIROYUKI , TAKANO AKIMI , NAWATA YOSHIICHI , UCHIHASHI KAZUMASA , OGAWA KAZUHIKO , YAMANE TSUKASA , YAMASHITA NOBUKI
IPC分类号： H01L31/042
CPC分类号： H01L31/186 , H01L31/046 , H02S50/00 , H02S50/15 , Y02E10/50 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a solar panel capable of carrying out measurement upon power generation inspection without causing variations of a result and at high precision. SOLUTION: This method of manufacturing the solar panel includes: a module formation step of forming a solar battery module by laminating solar battery films on a translucent substrate; a module inspection step of carrying out the power generation inspection in the solar battery module; a panellization step of forming the solar battery panel by panellizing the solar battery module; a panel cleaning step of cleaning the light incident surface of the solar panel; and a panel inspection step of carrying out the power generation inspection in the solar panel. The panel cleaning step is carried out immediately before the panel power generation inspection step. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在发电检查时进行测量而不引起结果的变化和高精度的太阳能电池板的制造方法。太阳能电池板的制造方法包括：通过将太阳能电池膜层叠在透光性基板上而形成太阳能电池模块的模块形成工序; 在太阳能电池模块中进行发电检测的模块检查步骤; 通过将所述太阳能电池模块分组来形成所述太阳能电池面板的整理步骤; 清洁太阳能电池板的光入射面的面板清洗工序; 以及在太阳能电池板中进行发电检查的面板检查步骤。面板清洁步骤在面板发电检测步骤之前进行。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2012253078A Manufacturing method of multi-junction photoelectric conversion apparatus 审中-公开
标题翻译：多功能光电转换装置的制造方法
公开(公告)号：JP2012253078A
公开(公告)日：2012-12-20
申请号：JP2011122513
申请日：2011-05-31
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： TAKEUCHI YOSHIAKI , YAMANE TSUKASA , NAKANO SHINYA
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a multi-junction photoelectric conversion apparatus which achieves high battery performance while inhibiting stripe shaped defects from occurring from a recessed part to a photoelectric conversion layer.SOLUTION: In a multi-junction photoelectric conversion apparatus 100, a transparent electrode layer 2, a power generation cell layer 91, an intermediate contact layer 5, another power generation cell layer 92, and a rear surface electrode layer 4 are formed on a translucent substrate 1 in sequence. In a manufacturing method of the multi-junction photoelectric conversion apparatus 100, an irregular shape is formed on an upper surface of the power generation cell layer 91, and the intermediate contact layer 5 is selectively formed in a recessed part on the upper surface of the power generation cell layer 91.
摘要翻译：要解决的问题：提供一种在抑制从凹部到光电转换层的条纹缺陷的同时实现高电池性能的多结光电转换装置的制造方法。解决方案：在多结光电转换装置100中，形成透明电极层2，发电单元层91，中间接触层5，另一发电单元层92和背面电极层4 在半透明基板1上。在多结光电转换装置100的制造方法中，在发电单元层91的上表面上形成不规则形状，中间接触层5选择性地形成在发电池层91.版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012234950A Silicon-based thin film production apparatus, photoelectric conversion device equipped with the same, silicon-based thin film production method and photoelectric conversion device manufacturing method using the same 有权
标题翻译：基于硅的薄膜生产装置，具有相同的光电转换装置，基于硅的薄膜生产方法和使用其的光电转换装置的制造方法
公开(公告)号：JP2012234950A
公开(公告)日：2012-11-29
申请号：JP2011102146
申请日：2011-04-28
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： TAKEUCHI YOSHIAKI , YAMANE TSUKASA , NAKANO SHINYA
IPC分类号： H01L21/205 , C23C16/24 , C23C16/509 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a silicon-based thin film production method and a silicon-based thin film production apparatus, which can produce a silicon-based thin film of cluster free or of a minimal cluster while inhibiting decrease in film production speed.SOLUTION: A silicon-based thin film production apparatus is an apparatus in which a material gas containing Si is supplied to the inside of a vacuum chamber in which a substrate 101 is housed and a high-frequency power is supplied to a discharge electrode 106 provided in a plasma generation part 103 to produce a silicon-based thin film on the substrate 101 by generating plasma of the material gas. The silicon-based thin film production apparatus comprises a cluster removal part 104 arranged between the substrate 101 and the discharge electrode 106. The cluster removal part 104 includes a plurality of openings in such a way that an opening ratio is 50% and over. The openings communicate the plasma generation part side and the substrate side. An opening width of the opening is not more than twice a mean free path of an Si nanocluster under a pressure in film production, and a length of the opening is not less than twice the opening width.
摘要翻译：要解决的问题：为了提供硅基薄膜制造方法和硅基薄膜制造装置，其可以在抑制薄膜的降低的同时产生无簇或最小簇的硅基薄膜生产速度。解决方案：硅基薄膜制造装置是将含有Si的原料气体供给到容纳基板101的真空室的内部并将高频电力供给到放电的装置设置在等离子体产生部103中的电极106，通过产生原料气体的等离子体，在基板101上产生硅系薄膜。硅基薄膜制造装置包括布置在基板101和放电电极106之间的簇去除部分104.簇除去部分104包括多个开口，使得开口率为50％以上。开口与等离子体生成部侧和基板侧连通。开口的开口宽度不超过膜生产中压力下的Si纳米簇的平均自由程的两倍，并且开口长度不小于开口宽度的两倍。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2010109280A Method of manufacturing solar cell 有权
标题翻译：制造太阳能电池的方法
公开(公告)号：JP2010109280A
公开(公告)日：2010-05-13
申请号：JP2008282098
申请日：2008-10-31
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SASAGAWA EISHIRO , NAWATA YOSHIICHI , YAMANE TSUKASA , YAMASHITA NOBUKI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a solar cell capable of stabilizing generation performance of the solar cell and improving a yield in manufacturing the same.
SOLUTION: A method of manufacturing a solar cell comprising the steps of: a gas discharge process S2, in which the internal gas of a container is discharged to increase the degree of vacuum while being closed after being subjected to air opening for maintenance; a film formation process S4, in which the inside of the discharged container is filled with a gas mixture that mixes an inert gas with a mixing gas containing oxygen atoms at a predetermined concentration, and a voltage is applied between a target arranged in the container and a substrate to manufacture a film constituting a solar cell on the substrate; and an initial film formation process S3, in which, prior to the deposition process S4, the gas mixture whose incoming gas concentration in the gas mixture is made to be lower than a predetermined concentration is supplied into the container and a film is formed only for a predetermined period on the substrate.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种能够稳定太阳能电池的发电性能并提高其制造成品率的太阳能电池的制造方法。解决方案：一种制造太阳能电池的方法，包括以下步骤：气体放电过程S2，其中排出容器的内部气体以在经受开启维护之后关闭时增加真空度 ; 成膜方法S4，其中排出的容器的内部填充有将惰性气体与含有氧原子的混合气体以预定浓度混合的气体混合物，并且在布置在容器中的靶材和在基板上制造构成太阳能电池的膜的基板; 以及初始成膜工序S3，其中在沉积工艺S4之前将气体混合物中的进气浓度低于预定浓度的气体混合物供应到容器中，并且仅形成膜在基板上的预定周期。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2008056949A Method and system for manufacturing thin film 有权
标题翻译：用于制造薄膜的方法和系统
公开(公告)号：JP2008056949A
公开(公告)日：2008-03-13
申请号：JP2006231594
申请日：2006-08-29
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： MASHIMA HIROSHI , TAKANO GIYOUMI , TAKEUCHI YOSHIAKI , YAMANE TSUKASA
IPC分类号： C23C16/52 , H01L21/205 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a method and a system for manufacturing a thin film capable of suppressing variance in quality of products for each batch. SOLUTION: The method for manufacturing a thin film using an apparatus 1 for manufacturing a thin film has a step of depositing a thin film 113 on a substrate 8 by executing (a) the film deposition batch treatment L. The step (a) includes a step (a1) of holding the substrate 8 by opposing electrodes 2, a step (a2) of introducing a gas L containing a raw material of the thin film 113 in a film deposition chamber 6, and a step (a3) of depositing the thin film 113 on the substrate 8 by applying the high frequency power 105 between a discharge electrode 3 and the opposing electrodes 2 while introducing the gas L. The step (a) is executed after the self-cleaning N of the apparatus 1 for manufacturing the thin film and before the next self-cleaning N'. In the step (a3), the high frequency power 105 is controlled based on the number L of the film deposition batch treatments to be executed by the apparatus 1 for manufacturing the thin film from the self-cleaning N to the film deposition batch treatment L. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够抑制每批次的产品质量变化的薄膜的制造方法和系统。解决方案：使用用于制造薄膜的装置1制造薄膜的方法具有通过执行（a）成膜批处理L在基板8上沉积薄膜113的步骤。步骤（a ）包括通过对置电极2保持基板8的步骤（a1），将含有薄膜113的原料的气体L引入成膜室6的步骤（a2），以及步骤（a3）在引入气体L的同时，通过在放电电极3和相对电极2之间施加高频电力105，将薄膜113沉积在基板8上。步骤（a）在用于制造薄膜，然后再进行下一次自清洁N'。在步骤（a3）中，基于由自清洁N到成膜批处理L的薄膜制造装置1执行的成膜分批处理的数量L，控制高频功率105 版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007285810A Device and method for evaluating photoelectric conversion layer 有权
标题翻译：用于评估光电转换层的装置和方法
公开(公告)号：JP2007285810A
公开(公告)日：2007-11-01
申请号：JP2006112097
申请日：2006-04-14
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SASAGAWA EISHIRO , FUJIYAMA TAIZO , YAMANE TSUKASA
IPC分类号： G01B11/06 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To inspect film thickness distribution and film quality of each of a plurality of stacked cell layers in a solar battery. SOLUTION: A device for evaluating a photoelectric conversion layer includes an application part 3 for applying a first beam absorbed by an amorphous film and a second beam absorbed by a crystalline film to a thin film, a detection part 2 for receiving transmitted beams of the first and second beams transmitted by the thin film, and a control part 7 for calculating film thicknesses of amorphous film components and of crystalline film components in the thin film based on the transmitted beams of the first and second beams. Where a crystalline film is stacked on an amorphous film of a substrate 11, the application part 3 applies the first and second beams as first and second application beams to the crystalline film and the amorphous film, respectively. The detection part 2 receives the first and second transmitted beams of the first and second application beams, respectively. The control part 7 calculates the first film thickness of the amorphous film based on the first transmitted beam while calculating the second film thickness of the crystalline film based on the second transmitted beam. The control part 7 evaluates the film quality of the crystalline film based on the first and second film thicknesses, and on an original film thickness of the amorphous film prior to the formation of the crystalline film. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：检查太阳能电池中的多个层叠电池层中的每一个的膜厚分布和膜质量。解决方案：用于评估光电转换层的装置包括用于将由非晶膜吸收的第一光束和由晶体膜吸收的第二光束施加到薄膜的施加部分3，用于接收透射光束的检测部分2 的第一和第二光束透射的第一和第二光束;以及控制部分7，用于基于第一和第二光束的透射光束计算薄膜中的非晶膜部件和晶体膜部件的膜厚度。在结晶膜堆叠在基板11的非晶膜上的情况下，施加部分3分别将第一和第二光束作为第一和第二施加光束施加到结晶膜和非晶膜。检测部分2分别接收第一和第二施加光束的第一和第二透射光束。控制部7基于第二透射光来计算基于第一透射光的非晶质膜的第一膜厚，同时计算结晶膜的第二膜厚。控制部7基于第一膜厚度和第二膜厚度以及在形成结晶膜之前的非晶膜的原始膜厚度来评价结晶膜的膜质量。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2004039348A Fuel cell system 审中-公开
公开(公告)号：JP2004039348A
公开(公告)日：2004-02-05
申请号：JP2002192623
申请日：2002-07-01
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： TANI TOSHIHIRO , OISHI MASAZUMI , YAMANE TSUKASA , HASHIMOTO MASAYUKI
IPC分类号： H01M8/10 , H01M8/04
CPC分类号： Y02E60/521
摘要： PROBLEM TO BE SOLVED: To purge fuel gas or oxidant gas used for power generation in a solid polymer type fuel cell used in a submersible vehicle, at a low consumption in a short time.
SOLUTION: This fuel cell system is provided with: the fuel cell 13 for generating electric power from the fuel gas and the oxidant gas and generating water; the first tank 11 for storing the generated water, a gas supply part 11-4a for supplying displacement gas to the fuel cell 13 when gas-purging the fuel cell 13; the second water tank 12 for storing water; and tank water volume regulating parts 11-5, 6, 7 for supplying water from the second tank 12 to the first tank 11 to reduce a displacement gas volume required for the purge of the supply gas inside the first tank 11 by reducing a volume of a gas phase part of the first tank 11 when the fuel cell 13 is gas-purged, and for discharging the generated water from the first tank 11 to the second tank 12 to bring the volume of the gas phase part of the first tank 11 into a value within a prescribed range when the fuel cell 13 is operated.
COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2012234951A Vacuum processing apparatus and method for adjusting distance between electrode faces of the same 审中-公开
标题翻译：真空加工装置和调整其电极面之间距离的方法
公开(公告)号：JP2012234951A
公开(公告)日：2012-11-29
申请号：JP2011102147
申请日：2011-04-28
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： OTSUBO EIICHIRO , YAMANE TSUKASA , NAKAO TEIKO
IPC分类号： H01L21/205 , C23C16/509
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus which can accurately set a distance between a discharge electrode and a counter electrode with a simple structure, obtain a film with stable quality and further enhance productivity of a substrate to be subjected to film-forming treatment.SOLUTION: A film-forming apparatus 1 (vacuum processing apparatus) comprises: a vacuum chamber 2; the discharge electrode 4 that is provided inside the vacuum chamber 2 and has a discharge electrode face 4b; the counter electrode 5 that is provided inside the vacuum chamber 2 and has a counter electrode face 5b that faces the discharge electrode face 4b in parallel with a predetermined distance C formed between the discharge electrode face 4b and itself; an electrode drive mechanism 15 that drives the counter electrode 5 and changes the distance C between the electrode faces; and a device 28 for adjusting the distance between the electrode faces, which determines the distance C between the electrode faces and can adjust a setting of the distance C between the electrode faces from the outside the vacuum chamber 2 while maintaining a vacuum state in the vacuum chamber 2.
摘要翻译：解决问题的方案为了提供能够以简单的结构精确地设定放电电极和对电极之间的距离的真空处理装置，获得质量稳定的膜，进一步提高要经受的基板的生产率成膜处理。解决方案：成膜设备1（真空处理设备）包括：真空室2; 放电电极4设置在真空室2内并具有放电电极面4b; 设置在真空室2内并具有与放电电极面4b平行地形成在放电电极面4b之间的预定距离C的对置电极面5b的对电极5; 驱动对置电极5并改变电极面之间的距离C的电极驱动机构15; 以及用于调节电极面之间的距离的装置28，其确定电极面之间的距离C，并且可以在真空室2的外部调节电极面之间的距离C的设定，同时保持真空中的真空状态版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2006210440A Method of heating substrate 有权
标题翻译：加热基材的方法
公开(公告)号：JP2006210440A
公开(公告)日：2006-08-10
申请号：JP2005017507
申请日：2005-01-25
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： SASAGAWA EISHIRO , FUJIYAMA TAIZO , YAMANE TSUKASA , FUKAGAWA MASAYUKI
IPC分类号： H01L21/205
摘要： PROBLEM TO BE SOLVED: To raise the temperature of a substrate at high speed, while the temperature of a substrate is maintaining uniformly.
SOLUTION: The substrate 14 is forced on a heater cover 15 in which the substrate 14 is placed by a pusher 19 so that a clearance makes it hard to be able to form between the heater cover 15 and the substrate 14. A low cost H
2 with high thermal conductivity is introduced into a deposition chamber, and a temperature rises. The density of the H
2 is reduced once at the timing when the substrate 14 starts floating from the heater cover 15 by the warpage of the substrate 14. When the temperature of the substrate 14 becomes uniform, it is again elevated in the density of the H
2 . The molecule density of the H
2 is controlled to become 1×10
23 pieces/m
3 to 3×10
23 pieces/m
3 (1,000 Pa), and preferably near 2×10
23 pieces/m
3 .
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在基板的温度均匀地保持的同时，高速地升高基板的温度。解决方案：将衬底14强制在加热器盖15上，其中衬底14由推动器19放置，使得间隙使得难以在加热器盖15和衬底14之间形成。低具有高热导率的成本H 2 被引入沉积室，温度升高。在基板14由于基板14的翘曲而开始从加热器盖15浮起的时刻，H 2 的密度减小一次。当基板14的温度变得均匀时，再次升高了H SB 2的密度。 H SB 2的分子密度被控制为1×10 3 / SP 3 / SP 3 / SP 3〜10×SP 23 / SP>件/ m 3 （1,000Pa），优选接近2×10 23 件/ m 3 。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2013055083A Film forming condition setting method and method of manufacturing photoelectric conversion device 审中-公开
标题翻译：薄膜成型条件设定方法及制造光电转换装置的方法
公开(公告)号：JP2013055083A
公开(公告)日：2013-03-21
申请号：JP2011190066
申请日：2011-08-31
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： YAMANE TSUKASA , NAKAO TEIKO
IPC分类号： H01L31/04 , C23C16/24
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a film forming condition setting method of a crystalline silicon photoelectric conversion layer, for manufacturing a photoelectric conversion device of high performance.SOLUTION: SiHflow rate is increased for a film forming condition candidate, to form a photoelectric conversion layer 92 made from crystalline silicon, so that an area rate and in-substrate plane distribution of a high brightness reflection region of the photoelectric conversion layer 92 are obtained. In a case where the distribution is uniform, a film forming condition candidate is set to be a final film forming condition. In a case where the distribution is not uniform, a high frequency power density supplied to each power feeding point of a discharge electrode is adjusted and is set to be a final film forming condition. For the photoelectric conversion layer 92 having an arbitrary Raman peak ratio that is obtained in advance, a correlation between the change amount of the SiHflow rate and the area rate of high brightness reflection region is used as a base, to obtain the Raman peak ratio of the photoelectric conversion layer 92. In a case where the obtained Raman peak ratio satisfies a design value, the film forming condition candidate is set to be a final film forming condition. In a case where the Raman peak ratio strays from the design value, the SiHflow rate, a SiHdivision voltage or high frequency power density is adjusted, for setting a final film forming condition.
摘要翻译：解决的问题：提供一种晶体硅光电转换层的成膜条件设定方法，用于制造高性能的光电转换装置。对于成膜条件候选物，SiH 4 流量增加，形成由晶体硅制成的光电转换层92，获得光电转换层92的高亮度反射区域的基板平面分布。在分布均匀的情况下，成膜条件候选被设定为最终成膜条件。在分布不均匀的情况下，调整供给到放电电极的各供电点的高频功率密度，并将其设定为最终的成膜条件。对于具有预先获得的任意拉曼峰值比的光电转换层92，SiH 4 流量的变化量与高亮度反射面积率之间的相关性区域用作基底，以获得光电转换层92的拉曼峰值比。在获得的拉曼峰值比满足设计值的情况下，成膜条件候选被设定为最终成膜条件。在拉曼峰值比设计值的情况下，SiH 4 流速，SiH 4 分压或调整高频功率密度，以设定最终的成膜条件。版权所有（C）2013，JPO＆INPIT

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