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    • 1. 发明专利
    • System and method for creating radioactive substance distribution map
    • 用于创建放射性物质分布图的系统和方法
    • JP2014145628A
    • 2014-08-14
    • JP2013013672
    • 2013-01-28
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • YONEDA MUNEHIROKURODA YOSHIKATSUARAKAWA HIROSHIGENBAN MEGUMIIKEFUCHI HIROSHI
    • G01T1/16G01T1/167
    • G06T11/60G01T1/167G01T7/00G06T11/206
    • PROBLEM TO BE SOLVED: To promptly create a comprehensive radioactive substance distribution map.SOLUTION: A system for creating a radioactive substance distribution map comprises: a radiation detector; a position measurement device; and a radioactive substance distribution map creation device. The radiation detector is mounted on a mobile body and measures radioactive substances. The position measurement device measures a position of the mobile body. The radioactive substance distribution map creation device receives measurement data including a measurement result of the radiation detector and position information on the mobile body measured by the position measurement device. The radioactive substance distribution map creation device creates a distribution map of the radioactive substances by using measurement data at a plurality of positions obtained along with traveling of the mobile body.
    • 要解决的问题:及时制作综合放射性物质分布图。解决方案:制造放射性物质分布图的系统包括:辐射探测器; 位置测量装置; 和放射性物质分布图制作装置。 放射线检测器安装在移动体上并测量放射性物质。 位置测量装置测量移动体的位置。 放射性物质分布图生成装置接收由位置测定装置测定出的包含放射线检测器的测定结果和移动体上的位置信息的测定数据。 放射性物质分配图生成装置通过使用与移动体的行进所获得的多个位置的测定数据,来生成放射性物质的分布图。
    • 4. 发明专利
    • Launching system and launching apparatus
    • 启动系统和启动装置
    • JP2011033249A
    • 2011-02-17
    • JP2009178507
    • 2009-07-31
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • KURODA YOSHIKATSUKAWAMATA YOSHIHIROSHINGO MIKA
    • F41F3/06B64C37/02B64C39/02
    • B64D1/04B64D3/00B64G1/005
    • PROBLEM TO BE SOLVED: To provide a launching system and a launching apparatus which enables air launch of a rocket without preparing a specific carrier aircraft.
      SOLUTION: The launching apparatus 10 in which an air-launching missile 11 is detachably mounted on a wing body 12 is towed by an aircraft 30 via a cable 20 and is run and taken off. After the launching system 10 is lifted to the launching height of the missile 11 by the aircraft 30, the missile 11 is released from the wing body 12 in the air and then the missile 11 is ignited and launched in the air. When the system for launching in the air is developed, since it is not required to newly develop a carrier aircraft as a platform, a development cost can be remarkably reduced. In the case where a small satellite is installed in the missile 11, it is possible to develop a prompt-response type satellite which promptly responds to security matters and disaster observation etc.
      COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供一种发射系统和发射装置,其能够在不准备特定载体飞机的情况下使空中发射火箭。

      解决方案:其中空中发射导弹11可拆卸地安装在翼体12上的发射装置10由飞机30经由电缆20拖拉并被运行和取下。 在飞机30将发射系统10提升到导弹11的发射高度之后,导弹11在空中从翼体12释放,然后导弹11被点燃并在空中发射。 在空中发射的系统开发中,由于不需要新开发载具飞机作为平台,因此可以显着降低开发成本。 在导弹11中安装小型卫星的情况下,可以制定及时响应安全事项和灾害观察等的及时响应型卫星。(C)2011年,JPO和INPIT

    • 6. 发明专利
    • Spacecraft system
    • SPACECRAFT系统
    • JP2009190593A
    • 2009-08-27
    • JP2008034025
    • 2008-02-15
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • KURODA YOSHIKATSUATSUMI MASAHIROABE NAOHIKOKATO MASAHIRO
    • B64G1/66B64G1/00
    • B64G1/002B64G1/288B64G1/401B64G1/402B64G1/428B64G1/641
    • PROBLEM TO BE SOLVED: To provide a simple, low-cost, and lightweight spacecraft system.
      SOLUTION: The spacecraft is provided with a satellite 60 having a single-stage or two-stage or more rockets 10 and 20 loaded thereon so as to be releasable. Because the satellite 60 includes an electronic instrument 65 for controlling the rockets 10 and 20 before the satellite 60 is released from the rockets 10 and 20, the rockets 10 and 20 are not necessary to be mounted with sensors, wireless devices, and electronic instruments dedicated to the rockets. As a result, the cost of the rockets 10 and 20 is reduced by eliminating these instruments, as well as the weight is reduced. In addition, the system in the rockets 10 and 20 is simplified, which reduces a preparation period of time for launch.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种简单,低成本,轻便的航天器系统。

      解决方案:航天器设置有卫星60,其具有装载在其上的单级或两级或两级以上的火箭10和20,以便可释放。 因为卫星60包括用于在卫星60从火箭10和20释放之前控制火箭10和20的电子仪器65,火箭10和20不需要安装有传感器,无线装置和专用电子仪器 到火箭 结果,通过消除这些仪器以及减轻重量来降低火箭10和20的成本。 此外,火箭10和20中的系统被简化,这减少了发射的准备时间。 版权所有(C)2009,JPO&INPIT

    • 7. 发明专利
    • Semiconductor memory device
    • 半导体存储器件
    • JP2005302123A
    • 2005-10-27
    • JP2004115429
    • 2004-04-09
    • Mitsubishi Heavy Ind LtdSeiko Epson Corpセイコーエプソン株式会社三菱重工業株式会社
    • TAGUCHI KAZUOISHII SHIGERUKURODA YOSHIKATSUTAKAHASHI DAISUKE
    • G11C11/41H01L21/8244H01L27/10H01L27/11H01L29/786
    • PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of guaranteeing a fast operation while soft error resistance is increased.
      SOLUTION: This semiconductor memory device includes a memory cell formed in a silicon-on-insulator (SOI) substrate. The memory cell includes a plurality of n type resistance added transistors TN5 to TN8 in which a source and a drain are serially connected between the input nodes N1 and N2 and the output nodes N3 and N4 of a pair of inverters INV1 and INV2, and a pair of resistance added transistor groups TNG1 and TNG2 for interconnecting the pair of inverters INV1 and INV2. The n type resistance added transistors TN5 to TN8 are depression type transistors having threshold values equal to/less than 0, a gate is connected to a word line WL, and a conductive state is set between the source and the drain when a gate voltage is equal to a low potential power supply line VSS.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种半导体存储器件,其能够在提高柔软的抗错误性的同时保证快速操作。 解决方案:该半导体存储器件包括形成在绝缘体上硅(SOI)衬底中的存储单元。 存储单元包括多个n型电阻加法晶体管TN5至TN8,其中源极和漏极串联连接在输入节点N1和N2与一对反相器INV1和INV2的输出节点N3和N4之间,并且 一对电阻加法晶体管组TNG1和TNG2,用于互连该对反相器INV1和INV2。 n型电阻加法晶体管TN5至TN8是具有等于/小于0的阈值的凹陷型晶体管,栅极连接到字线WL,并且当栅极电压为栅极电压时,导通状态被设置在源极和漏极之间 等于低电位电源线VSS。 版权所有(C)2006,JPO&NCIPI
    • 8. 发明专利
    • トランジスタ及び半導体装置
    • 晶体管和半导体器件
    • JP2015035617A
    • 2015-02-19
    • JP2014211200
    • 2014-10-15
    • 三菱重工業株式会社Mitsubishi Heavy Ind Ltd
    • FUKUOKA YOSHIHIROISHII SHIGERUKURODA YOSHIKATSU
    • H01L21/336H01L21/8234H01L27/06H01L27/08H01L29/786
    • 【課題】SEU耐性が高く、高性能で低価なトランジスタ及び半導体装置を提供すること。【解決手段】絶縁性基板12上に形成されたシリコン層と、シリコン層に形成され、第1導電型であるボディ(P−)15、第2導電型であるソース(N+)13、ドレイン(N+)14からなる部分と、ボディ(P−)15及びソース(N+)13にボディ(P−)15と同一導電型で接合され、ソース(N+)13と同じもしくは高い電位が供給されるボディ端子(P+)16と、を具備する。ボディ(P−)15において放射線によって発生した正電荷は、ボディ端子(P+)16を介して当該トランジスタ外に流出する。【選択図】図1
    • 要解决的问题:提供具有高SEU(单事件颠簸)电阻和高性能的低价格的晶体管和半导体器件。解决方案:晶体管包括:形成在绝缘基板12上的硅层; 形成在硅层上并由第一导电类型的主体(P-)15,第二导电类型的源(N +)13和第二导电类型的漏极(N +)14构成的部分) 以及与主体(P-)15相同的导电类型的主体(P-)15和源(N +)13连接的主体端子(P +)16,并且其电位等于或高于 源(N +)13。 身体(P-)15中的射线产生的正电荷通过身体终端(P +)16流出晶体管。
    • 10. 发明专利
    • Semiconductor memory device
    • 半导体存储器件
    • JP2005302121A
    • 2005-10-27
    • JP2004115427
    • 2004-04-09
    • Mitsubishi Heavy Ind LtdSeiko Epson Corpセイコーエプソン株式会社三菱重工業株式会社
    • TAGUCHI KAZUOISHII SHIGERUKURODA YOSHIKATSUTAKAHASHI DAISUKE
    • G11C11/41H01L21/8244H01L27/11H01L29/786
    • PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of guaranteeing a fast operation while increasing soft error resistance.
      SOLUTION: This semiconductor memory device includes an SRAM memory cell formed on an SOI substrate. Inverters INV1 and INV2 include p type load transistors TP1 and TP2 whose sources are connected to a high potential power supply line VDD, n type driving transistors TN1 and TN2 whose sources are connected to a low potential power supply line VSS, and n type resistance added transistors TD1 and TD2 whose sources and drains are connected between storage nodes N1 and N2 and driving transistors TN1 and TN2 and whose gates are connected to a word line WL. In each of the resistance added transistors TD1 and TD2, a conductive state is set between the source and the drain when a gate voltage is the power supply voltage Vss of a low potential side.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供能够在增加软错误阻力的同时保证快速操作的半导体存储器件。 解决方案:该半导体存储器件包括形成在SOI衬底上的SRAM存储单元。 反相器INV1和INV2包括其源极连接到高电位电源线VDD的p型负载晶体管TP1和TP2,源极连接到低电位电源线VSS的n型驱动晶体管TN1和TN2,以及n型电阻相加 其源极和漏极连接在存储节点N1和N2与驱动晶体管TN1和TN2之间并且其栅极连接到字线WL的晶体管TD1和TD2。 在每个电阻加法晶体管TD1和TD2中,当栅极电压是低电位侧的电源电压Vss时,在源极和漏极之间设置导通状态。 版权所有(C)2006,JPO&NCIPI