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1. 发明专利

JP2003031779A Method for manufacturing soi wafer 审中-公开
标题翻译： SOI WAFER制造方法
公开(公告)号：JP2003031779A
公开(公告)日：2003-01-31
申请号：JP2001213648
申请日：2001-07-13
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NARUOKA HIDEKI , HATTORI NOBUMI , YAMAMOTO HIDEKAZU
IPC分类号： H01L21/683 , H01L21/00 , H01L21/02 , H01L21/762 , H01L27/12 , H01L21/68
CPC分类号： H01L21/67092 , H01L21/76251 , Y10S414/138
摘要： PROBLEM TO BE SOLVED: To obtain a method for manufacturing an SOI wafer capable of avoiding occurrence of a damage of a support substrate for causing a thermal crack of the wafer or a slip dislocation.
SOLUTION: A boat 4 has a recess 5 formed to support a laminated wafer 50. The recess 5 has a first side face 5a, a first bottom 5b, a second side face 5c, a second bottom 5d and a third side face 5e. As seen from an upper surface of the boat 4, the bottom 5d exists at a deeper position than the bottom 5b. The wafer 50 is brought at the side face of a silicon wafer 2 into contact with the bottom 5b of the recess 5, and charged in the boat 4 in a state in which the side face of a silicon wafer 1 is not brought into contact with the bottom 5d of the recess 5. A second main surface 2b of the wafer 2 is brought into contact with the side face 5a of the recess 5, and a second main surface 1a of the wafer 1 is brought into contact with a third side face 5e of the recess 5.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：获得能够避免发生用于引起晶片热裂纹或滑移位错的支撑基板损坏的SOI晶片的制造方法。解决方案：船4具有形成为支撑层压晶片50的凹部5.凹部5具有第一侧面5a，第一底部5b，第二侧面5c，第二底部5d和第三侧面5e。从舟皿4的上表面看，底部5d位于比底部5b更深的位置。晶片50被带到硅晶片2的侧面与凹部5的底部5b接触，并且在硅晶片1的侧面不与其接触的状态下被装载在舟皿4中凹部5的底部5d。晶片2的第二主表面2b与凹部5的侧面5a接触，晶片1的第二主表面1a与第三侧面 5e的凹部5。

2. 发明授权

US6271541B2 Semiconductor device with high gettering capability to impurity present in semiconductor layer of SOI substrate 有权
标题翻译：具有对SOI衬底的半导体层中存在的杂质具有高吸杂能力的半导体器件
公开(公告)号：US6271541B2
公开(公告)日：2001-08-07
申请号：US47678099
申请日：1999-12-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAGUCHI YASUO , YAMAMOTO HIDEKAZU
IPC分类号： H01L29/78 , H01L21/322 , H01L21/336 , H01L21/762 , H01L29/786 , H01L29/76 , H01L23/58 , H01L27/01 , H01L31/036 , H01L31/112
CPC分类号： H01L21/76264 , H01L21/76283 , H01L29/78609 , H01L29/78615 , H01L29/78618 , Y10S257/913
摘要： A semiconductor device is provided which is capable of removing the heavy metal impurity in a SOI layer by gettering, and realizing an improvement in breakdown voltage and reliability. The semiconductor device comprises polysilicon regions functioning as a gettering site, which are selectively formed in a buried fashion, such as to make no contact with a gate insulating film and an element isolation insulating film, in a main surface of part of a SOI layer where a drain region and a source region are disposed; and contact holes being filled with polysilicon plug functioning as a gettering site, and extending through an interlayer insulating film between an upper surface of the interlayer insulating film and an upper surface of the polysilicon regions.
摘要翻译：提供一种半导体器件，其能够通过吸杂去除SOI层中的重金属杂质，并且实现了击穿电压和可靠性的提高。半导体器件包括用作吸杂位点的多晶硅区域，其以掩埋的方式选择性地形成，例如在SOI层的一部分的主表面中不与栅极绝缘膜和元件隔离绝缘膜接触，设置漏极区域和源极区域; 以及填充有用作吸杂位置的多晶硅插塞的接触孔，并且延伸穿过层间绝缘膜的上表面和多晶硅区域的上表面之间的层间绝缘膜。

3. 发明专利

DE19753494A1 Silicon wafer especially SOI wafer production 未知
公开(公告)号：DE19753494A1
公开(公告)日：1998-10-01
申请号：DE19753494
申请日：1997-12-02
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO HIDEKAZU
IPC分类号： H01L27/12 , H01L21/02 , H01L21/762 , H01L21/20 , H01L21/324
摘要： A silicon wafer (6) production process involves (a) implanting hydrogen ions through a silicon oxide layer-coated silicon wafer surface to form a hydrogen-implanted layer (4); (b) bonding a substrate (5) to the wafer surface; (c) heating the wafer (1) to break off its surface at the hydrogen-implanted layer (4); and (d) heating the wafer portion (6), bonded to the substrate (5), in a hydrogen atmosphere to smooth the exposed broken surface of the wafer (6). Also claimed is a similar silicon wafer (6) production process, in which step (d) is replaced by (d') epitaxial silicon growth on the broken surface to form a new smooth surface. Preferably, step (d) is carried out by annealing at 1050-1350 deg C, plasma heating in a hydrogen atmosphere or rapid thermal annealing and step (d') is carried out by epitaxial growth in trichlorosilane, dichlorosilane, monochlorosilane or monosilane at \-800 deg C. Further claimed is a silicon wafer produced by one of the above processes.

4. 发明专利

FR2762136B1 未知
公开(公告)号：FR2762136B1
公开(公告)日：2001-11-16
申请号：FR9806168
申请日：1998-05-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO HIDEKAZU
IPC分类号： H01L27/12 , H01L21/02 , H01L21/762 , H01L21/324 , H01L21/306
摘要： The object of the invention is to provide a SOI silicon wafer whose surface will not be defected by chemical mechanic polishing. To achieve the object, firstly, the hydrogen ions are implanted onto the surface of the silicon wafer to form the hydrogen implantation layer. Then, the silicon wafer is heated to make the silicon surface delaminated on the hydrogen implantation place. The silicon wafer could proceed annealing process on the hydrogen gas subsequently in order to flatten the delaminated exposed surface. Besides, the annealing process also could be replaced by plasma annealing or rapid thermal annealing process within the hydrogen.

5. 发明专利

FR2762136A1 未知
公开(公告)号：FR2762136A1
公开(公告)日：1998-10-16
申请号：FR9806168
申请日：1998-05-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO HIDEKAZU
IPC分类号： H01L27/12 , H01L21/02 , H01L21/762 , H01L21/324 , H01L21/306
摘要： The object of the invention is to provide a SOI silicon wafer whose surface will not be defected by chemical mechanic polishing. To achieve the object, firstly, the hydrogen ions are implanted onto the surface of the silicon wafer to form the hydrogen implantation layer. Then, the silicon wafer is heated to make the silicon surface delaminated on the hydrogen implantation place. The silicon wafer could proceed annealing process on the hydrogen gas subsequently in order to flatten the delaminated exposed surface. Besides, the annealing process also could be replaced by plasma annealing or rapid thermal annealing process within the hydrogen.

6. 发明专利

DE19545518A1 Semiconductor substrate e.g. single crystal silicon wafer 未知
公开(公告)号：DE19545518A1
公开(公告)日：1996-08-22
申请号：DE19545518
申请日：1995-12-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： KIMURA YASUHIRO , YAMAUCHI KEIJI , YAMAMOTO HIDEKAZU , YAMAMOTO SHIGEHISA , KATSUMATA MASAFUMI , MUKOGAWA YASUKAZU , WATANABE HAJIME
IPC分类号： C30B33/00 , G03F9/00 , H01L23/544 , H01L21/66 , C30B31/22 , C30B25/02 , C30B33/06
摘要： A novel semiconductor substrate comprises a semiconductor wafer (1) with a completely circular outer periphery and having a crystal orientation-identifying mark (2) formed in a predetermined region of its surface. Pref. the mark (2) is formed on or near the outer periphery and comprises a defect diffusion region, defect-contg. buried silicon, a surface structure, a film on the wafer side surface, buried silicon oxide or a magnetic substance. Also claimed is a semiconductor substrate comprising a first semiconductor wafer with a completely circular outer periphery and a second semiconductor wafer which is joined to the first wafer and is arranged so that the crystal orientation of a predetermined region of its surface can be determined. Further claimed are (i) semiconductor substrate prodn. processes; and (ii) methods of using semiconductor substrates.

7. 发明专利

FR2761526B1 未知
公开(公告)号：FR2761526B1
公开(公告)日：2002-08-30
申请号：FR9715079
申请日：1997-12-01
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO HIDEKAZU
IPC分类号： H01L27/12 , H01L21/02 , H01L21/762 , H01L21/324 , H01L21/306
摘要： The object of the invention is to provide a SOI silicon wafer whose surface will not be defected by chemical mechanic polishing. To achieve the object, firstly, the hydrogen ions are implanted onto the surface of the silicon wafer to form the hydrogen implantation layer. Then, the silicon wafer is heated to make the silicon surface delaminated on the hydrogen implantation place. The silicon wafer could proceed annealing process on the hydrogen gas subsequently in order to flatten the delaminated exposed surface. Besides, the annealing process also could be replaced by plasma annealing or rapid thermal annealing process within the hydrogen.

8. 发明专利

DE4409835A1 Solid-state image sensor and driver process therefor 未知
公开(公告)号：DE4409835A1
公开(公告)日：1994-10-06
申请号：DE4409835
申请日：1994-03-22
申请人： JAPAN BROADCASTING CORP , MITSUBISHI ELECTRIC CORP
发明人： ANDOH FUMIHIKO , TAKETOSHI KAZUHISA , TANAKA KATSU , YAMAWAKI MASAO , YAMAMOTO HIDEKAZU , KAWASHIMA HIROSHI , MURATA NAOFUMI
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/347 , H04N5/351 , H04N5/357 , H04N5/369 , H04N5/374 , H04N5/3745 , H04N3/15 , H01L29/66
摘要： An image sensor exhibits a photoelectric conversion element (PD), a first MOS transistor (32, 72) with a gate which is connected to the photo-electric conversion element, a second MOS transistor (33, 73) which is connected in series with the first transistor, and a third MOS transistor (43, 75, 5), which is connected in series with the photoelectric conversion element, the threshold voltage of the third MOS transistor being set higher than that of the second MOS transistor.

9. 发明专利

DE19855394A1 Semiconductor substrate processing involves cleaning and forming an artificial oxide layer 未知
公开(公告)号：DE19855394A1
公开(公告)日：1999-06-17
申请号：DE19855394
申请日：1998-12-01
申请人： MITSUBISHI ELECTRIC CORP
发明人： KUME MORIHIKO , YAMAMOTO HIDEKAZU
IPC分类号： H01L21/304 , H01L21/306 , H01L21/316
摘要： An artificial oxide layer is formed on a semiconductor substrate after RCA cleaning and native oxide film removal. A semiconductor substrate is processed by RCA cleaning, removal of the resulting native oxide film and exposure to an atmosphere containing 20-100% oxygen to form an oxide layer of saturation thickness. Independent claims are also included for the following: (i) a semiconductor substrate processing method comprising RCA cleaning, removal of the resulting native oxide film and dipping in pure water at 20-100 deg C to form an oxide layer of 10-15\*10 m thickness; and (ii) a semiconductor substrate processing method comprising SPM cleaning, using a mixture of sulfuric acid, hydrogen peroxide solution and pure water, and APM-ozone water cleaning, using a mixture of ammonia, hydrogen peroxide solution, pure water and ozone water, to form an oxide layer.

10. 发明专利

FR2761526A1 未知
公开(公告)号：FR2761526A1
公开(公告)日：1998-10-02
申请号：FR9715079
申请日：1997-12-01
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO HIDEKAZU
IPC分类号： H01L27/12 , H01L21/02 , H01L21/762 , H01L21/324 , H01L21/306
摘要： The object of the invention is to provide a SOI silicon wafer whose surface will not be defected by chemical mechanic polishing. To achieve the object, firstly, the hydrogen ions are implanted onto the surface of the silicon wafer to form the hydrogen implantation layer. Then, the silicon wafer is heated to make the silicon surface delaminated on the hydrogen implantation place. The silicon wafer could proceed annealing process on the hydrogen gas subsequently in order to flatten the delaminated exposed surface. Besides, the annealing process also could be replaced by plasma annealing or rapid thermal annealing process within the hydrogen.

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