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1. 发明专利

JP2012190849A Thin film solar cell and manufacturing method thereof 有权
标题翻译：薄膜太阳能电池及其制造方法
公开(公告)号：JP2012190849A
公开(公告)日：2012-10-04
申请号：JP2011050741
申请日：2011-03-08
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FURUHATA TAKEO , SHINAGAWA TOMOHIRO
IPC分类号： H01L31/04
CPC分类号： Y02E10/545 , Y02E10/548
摘要： PROBLEM TO BE SOLVED: To obtain a thin film solar cell with excellent photoelectric conversion efficiency.SOLUTION: The thin film solar cell comprises a translucent insulation substrate; a transparent conductive film formed on the translucent insulation substrate; a p-type conductive semiconductor layer formed on the transparent conductive film and including a Si atom and an O atom; a buffer layer formed on the p-type conductive semiconductor layer, having a layer including the Si atom, the O atom and a C atom, and having an O atom concentration equal to or less than that of the p-type conductive semiconductor layer; a photoelectric conversion layer formed on the buffer layer, including the Si atom and the C atom, and having an O atom concentration lower than that of the buffer layer; and an n-type conductive semiconductor layer formed on the photoelectric conversion layer. The buffer layer has a band gap higher than that of the photoelectric conversion layer, and includes an area in which the O atom concentration is not increased and decreased from an interface to the p-type conductive semiconductor layer toward an interface to the photoelectric conversion layer.
摘要翻译：要解决的问题：获得具有优异的光电转换效率的薄膜太阳能电池。
解决方案：薄膜太阳能电池包括半透明绝缘基板; 形成在所述半透明绝缘基板上的透明导电膜; 形成在透明导电膜上并包含Si原子和O原子的p型导电半导体层; 形成在所述p型导电半导体层上的缓冲层，具有包含所述Si原子，所述O原子和C原子的O原子浓度等于或小于所述p型导电半导体层的O原子浓度的层; 形成在包含Si原子和C原子的缓冲层上，并且O原子浓度低于缓冲层的光电转换层; 以及形成在光电转换层上的n型导电半导体层。缓冲层的带隙高于光电转换层的带隙，并且包括其中O原子浓度不从界面到p型导电半导体层向与光电转换层的界面增加和减小的区域。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012049234A Thin film solar battery and method for manufacturing the same 审中-公开
标题翻译：薄膜太阳能电池及其制造方法
公开(公告)号：JP2012049234A
公开(公告)日：2012-03-08
申请号：JP2010188249
申请日：2010-08-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHINAGAWA TOMOHIRO
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To prevent the deposition of a low-resistance material in a separation groove of a transparent conductive film, and obtain a thin film solar battery that suppresses the generation of a leak current and a method for manufacturing the same.SOLUTION: A thin film solar battery includes, on a translucent insulation substrate 1, a plurality of unit solar cells including a transparent conductive film 2, a power generation layer 3, and a metal back surface electrode 4. The thin film solar battery connects the plurality of unit solar cells in series by partially removing the power generation layer 3, and connecting the transparent conductive film 2 and the metal back surface electrode 4. The thin film solar battery includes a insulation separation layer 5 formed by a insulation material, inside a separation groove 11 separating the transparent conductive films 2 on the translucent insulation substrate 1.
摘要翻译：解决的问题：为了防止在透明导电膜的分离槽中沉积低电阻材料，并获得抑制漏电流的产生的薄膜太阳能电池及其制造方法。解决方案：薄膜太阳能电池在半透明绝缘基板1上包括多个单元太阳能电池，其包括透明导电膜2，发电层3和金属背表面电极4.薄膜太阳能电池通过部分去除发电层3并连接透明导电膜2和金属背面电极4来串联连接多个单元太阳能电池。薄膜太阳能电池包括由绝缘材料形成的绝缘分离层5 在透明绝缘基板1上分离透明导电膜2的分离槽11内。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2014049675A Solar cell and method of manufacturing the same 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：JP2014049675A
公开(公告)日：2014-03-17
申请号：JP2012193056
申请日：2012-09-03
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHINAGAWA TOMOHIRO , FURUHATA TAKEO
IPC分类号： H01L31/06
CPC分类号： Y02E10/545 , Y02E10/548
摘要： PROBLEM TO BE SOLVED: To obtain a heterojunction silicon solar cell which suppresses current loss and in-film defects and has high photoelectric conversion efficiency.SOLUTION: The heterojunction silicon solar cell comprises: a single crystal silicon substrate 1 of a first conductivity type; and an intrinsic amorphous silicon layer 21, a microcrystal silicon layer 4, and an amorphous silicon layer 22 having a second conductivity type, which are sequentially laminated on a first main surface 1A of the single crystal silicon substrate. Thus, efficiency deterioration due to in-film hydrogen diffusion can be suppressed without increasing light absorption loss.
摘要翻译：要解决的问题：获得抑制电流损耗和膜内缺陷并具有高光电转换效率的异质结硅太阳能电池。解决方案：异质结硅太阳能电池包括：第一导电类型的单晶硅衬底1; 和本征非晶硅层21，微晶硅层4和具有第二导电类型的非晶硅层22，其依次层压在单晶硅衬底的第一主表面1A上。因此，可以抑制由于膜内氢扩散而引起的效率劣化，而不增加光吸收损失。

4. 发明专利

JP2013162028A Method for forming amorphous silicon film 审中-公开
标题翻译：形成非晶硅膜的方法
公开(公告)号：JP2013162028A
公开(公告)日：2013-08-19
申请号：JP2012024148
申请日：2012-02-07
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MOTOTANI SO , YAMAMUKA MIKIO , YAMAGUCHI SHINSAKU , SHINAGAWA TOMOHIRO
IPC分类号： H01L21/205 , C23C16/24
摘要： PROBLEM TO BE SOLVED: To provide a method for forming an amorphous silicon film capable of reducing a defect level in an interface between a single crystal silicon substrate and an amorphous silicon film, and a manufacturing cost.SOLUTION: A method for forming an amorphous silicon film comprises the steps of: processing a surface of a single crystal silicon substrate by exposing the surface of the single crystal silicon substrate to a first material gas in a film forming chamber; and forming an amorphous silicon film on the processed surface of the single crystal silicon substrate by a plasma CVD method using a second material gas corresponding to the first material gas in the film forming chamber.
摘要翻译：要解决的问题：提供一种能够降低单晶硅衬底和非晶硅膜之间的界面中的缺陷水平的非晶硅膜的制造方法和制造成本。解决方案：一种用于形成非晶硅的方法膜包括以下步骤：通过将单晶硅衬底的表面暴露于成膜室中的第一材料气体来处理单晶硅衬底的表面; 以及通过等离子体CVD法，在成膜室中使用与第一原料气体相对应的第二材料气体，在单晶硅衬底的加工表面上形成非晶硅膜。

5. 发明专利

JP2012114296A Thin-film solar cell and method of manufacturing the same 审中-公开
标题翻译：薄膜太阳能电池及其制造方法
公开(公告)号：JP2012114296A
公开(公告)日：2012-06-14
申请号：JP2010262897
申请日：2010-11-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FURUHATA TAKEO , SHINAGAWA TOMOHIRO
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To obtain a thin-film solar cell having a tandem structure where two layers or more of photoelectric conversion unit are laminated and exhibiting excellent photoelectric conversion efficiency.SOLUTION: The thin-film solar cell comprises: a prestage photoelectric conversion unit 3 including a first p-conductivity type layer 31, a first photoelectric conversion layer 32 and a first n-conductivity type layer 33 from the light incident side; and a post-prestage photoelectric conversion unit including a second p-conductivity type layer 41, a second photoelectric conversion layer 42 and a second n-conductivity type layer 43 from the light incident side in contact with the first n-conductivity type layer 33. The first n-conductivity type layer 33 has a high refractive index layer 332 having a refractive index higher than those of the first photoelectric conversion layer 32 and the second p-conductivity type layer 41, and antireflection layers 331 and 333 provided either on the light incident side and/or the light emission side of the high refractive index layer 332 in contact therewith.
摘要翻译：要解决的问题：为了获得具有两层或更多层光电转换单元并具有优异光电转换效率的串联结构的薄膜太阳能电池。解决方案：薄膜太阳能电池包括：从光入射侧包括第一p导电型层31，第一光电转换层32和第一n导电型层33的预置光电转换单元3; 以及包含从与第一n型导电类型层33接触的光入射侧的第二p型导电型层41，第二光电转换层42和第二n型导电类型层43的后置前置光电转换单元。第一n导电类型层33具有折射率高于第一光电转换层32和第二p导电类型层41的折射率高的折射率层332，以及设置在光上的抗反射层331和333 高折射率层332的入射侧和/或发光侧与其接触。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2014211172A 軸受装置および軸受装置のためのグリース供給方法审中-公开
标题翻译：用于轴承装置的轴承装置和油脂供应方法
公开(公告)号：JP2014211172A
公开(公告)日：2014-11-13
申请号：JP2013086376
申请日：2013-04-17
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： SHINAGAWA TOMOHIRO
IPC分类号： F16C33/66 , F16C19/00 , F16N7/02 , F16N7/18 , F16N21/02
CPC分类号： F16C19/00 , F16C33/66 , F16N21/02 , F16N7/02 , F16N7/18
摘要：【課題】より簡単な構造でグリースを軸受に円滑に供給するグリースの補給構造を有する軸受装置等を提供する。【解決手段】横方向に延びたシャフトを回転可能に軸受で受ける軸受装置であって、前記軸受の前記シャフトの軸方向に隣接して、前記シャフトの上方にグリースを格納させておくポケットを設け、前記ポケットが、前記シャフトと対向または接する下側に開口部を有すると共に、前記開口部の前記軸受側に前記シャフトの面に沿って前記軸受まで延びるガイド面を有し、前記シャフトの前記開口部およびガイド面と対向または接する周面に前記シャフトの回転軸を軸とする螺旋の溝が形成されている。【選択図】図1
摘要翻译：要解决的问题：提供一种具有润滑脂补充结构的轴承装置等，以便以简单的结构向轴承平滑地供给润滑脂。解决方案：用于可旋转地接收由轴承横向延伸的轴的轴承装置具有用于存储的口袋轴的上部上的润滑脂与轴承的轴的轴向相邻。所述口袋在面向或邻接所述轴的下侧具有开口，以及沿所述开口轴承侧的所述轴的表面延伸到所述轴承的引导表面。以轴为旋转轴的螺旋槽作为其轴线形成在面向或邻接开口和引导表面的轴的圆周表面上。

7. 发明专利

JP2014130943A Solar cell and manufacturing method therefor 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：JP2014130943A
公开(公告)日：2014-07-10
申请号：JP2012288408
申请日：2012-12-28
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAMURA KEISUKE , YAMAMUKA MIKIO , FURUHATA TAKEO , YAMAGUCHI SHINSAKU , SHINAGAWA TOMOHIRO , YASUI SHINICHI
IPC分类号： H01L31/06 , H01L21/205
CPC分类号： Y02E10/547 , Y02E10/548
摘要： PROBLEM TO BE SOLVED: To form an excellent junction interface by maintaining the interface of an n-type semiconductor layer deposited on a rear side and a crystal silicon substrate in a clean state of less impurities, when using an n-type crystal silicon substrate as the crystal silicon substrate, in the manufacture of a heterojunction solar cell.SOLUTION: A manufacturing method of a solar cell includes a first step for forming a protective layer on the rear side of a crystalline semiconductor substrate, a second step for forming an intrinsic semiconductor layer and a p-type amorphous semiconductor layer on a light-receiving surface, a third step for removing the protective layer, and a fourth layer for forming an intrinsic semiconductor layer and an n-type amorphous semiconductor layer on the rear side, being carried out in this order.
摘要翻译：要解决的问题：为了通过保持沉积在后侧的n型半导体层与晶体硅衬底的界面在较少杂质的清洁状态下形成优异的接合界面，当使用n型晶体硅衬底作为晶体硅衬底，制造异质结太阳能电池。解决方案：太阳能电池的制造方法包括在晶体半导体衬底的后侧形成保护层的第一步骤，用于形成本征半导体的第二步骤层和在受光面上的p型非晶半导体层，用于去除保护层的第三步骤，以及用于形成背面的本征半导体层和n型非晶半导体层的第四层，被携带在这个顺序。

8. 发明专利

JP2014072416A Solar cell and manufacturing method therefor, solar cell module 审中-公开
标题翻译：太阳能电池及其制造方法，太阳能电池模块
公开(公告)号：JP2014072416A
公开(公告)日：2014-04-21
申请号：JP2012217990
申请日：2012-09-28
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FURUHATA TAKEO , SHINAGAWA TOMOHIRO
IPC分类号： H01L31/06
CPC分类号： Y02E10/546 , Y02E10/547 , Y02E10/548
摘要： PROBLEM TO BE SOLVED: To provide a solar cell having a bonding structure of a conductivity type semiconductor layer and a crystalline semiconductor substrate, and excellent photoelectric conversion efficiency.SOLUTION: On one surface of an n-type crystalline semiconductor substrate 11, a silicon-based intermediate layer 12, a p-type silicon-based thin film layer 13, and a first collector electrode 15 are formed in this order. The p-type silicon-based thin film layer 13 has a first p-type silicon-based thin film layer 131 provided in contact with the silicon-based intermediate layer 12 and having a relatively low p-type impurity concentration that is constant in the film thickness direction, and a second p-type silicon-based thin film layer 132 having a relatively high p-type impurity concentration that is constant in the film thickness direction. The silicon-based intermediate layer 12 has a first intermediate layer 121 contiguous to the first p-type silicon-based thin film layer 131 and having a p-type impurity concentration that decreases monotonically from a concentration substantially same as the p-type impurity concentration of the first p-type silicon-based thin film layer 131, from the first p-type silicon-based thin film layer 131 side toward the n-type crystalline semiconductor substrate 11 side, and a second intermediate layer 122 having a p-type impurity concentration lower than that of the first intermediate layer.
摘要翻译：要解决的问题：提供一种具有导电类型半导体层和晶体半导体衬底的结合结构的太阳能电池，并且具有优异的光电转换效率。解决方案：在n型晶体半导体衬底11的一个表面上，依次形成基于中间层的中间层12，p型硅基薄膜层13和第一集电极15。 p型硅系薄膜层13具有与硅系中间层12接触而设置的第一p型硅系薄膜层131，具有相对低的p型杂质浓度，膜厚方向的膜厚方向的p型杂质浓度相对较高的第二p型硅系薄膜层132。硅基中间层12具有与第一p型硅类薄膜层131相邻的第一中间层121，其p型杂质浓度从与p型杂质浓度基本相同的浓度单调降低的第一p型硅系薄膜层131从第一p型硅系薄膜层131侧朝向n型结晶半导体基板11侧，第二中间层122具有p型杂质浓度低于第一中间层的浓度。

9. 发明专利

JP2014072406A Solar cell and manufacturing method therefor, solar cell module 审中-公开
标题翻译：太阳能电池及其制造方法，太阳能电池模块
公开(公告)号：JP2014072406A
公开(公告)日：2014-04-21
申请号：JP2012217875
申请日：2012-09-28
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHINAGAWA TOMOHIRO , YAMAGUCHI SHINSAKU , YASUI SHINICHI , SUGAWARA KATSUTOSHI , TANIGUCHI TOMOYUKI , FURUHATA TAKEO
IPC分类号： H01L31/06
CPC分类号： Y02E10/548
摘要： PROBLEM TO BE SOLVED: To provide a solar cell having an intrinsic amorphous silicon-based thin film layer between a conductivity type crystal silicon-based substrate and a conductivity type crystal silicon-based thin film layer, in which defects on the boundary surface of the conductivity type crystal silicon-based substrate and in the intrinsic amorphous silicon-based thin film layer are reduced and excellent photoelectric conversion efficiency is ensured.SOLUTION: In a solar cell where an intrinsic amorphous silicon-based thin film layer 21, a conductivity type crystal silicon-based thin film layer 22, and an electrode 23 are laminated, in this order, on a principal surface of a conductivity type crystal silicon-based substrate 1, the intrinsic amorphous silicon-based thin film layer 21 has, as a plurality of peaks of hydrogen density, one or more film peak in the film, and one more surface layer peak in the boundary region to the conductivity type crystal silicon-based thin film layer 22.
摘要翻译：要解决的问题：为了提供在导电型晶体硅基基板和导电型晶体硅基薄膜层之间具有本征非晶硅基薄膜层的太阳能电池，其中，在导电型晶体硅基基板和本征非晶硅基薄膜层中的光电转换效率降低，并且确保了优异的光电转换效率。在本征非晶硅系薄膜层21，导电型晶体硅基薄膜层22和电极23依次叠层在导电型晶体硅基基板1的主表面上，本征非晶硅基薄膜层21具有多个氢密度峰，膜中的一个或多个膜峰，以及边界区中另一个表面层峰到导电型晶体硅基薄膜层呃22。

10. 发明专利

JP2014020547A Brake device 有权
标题翻译：刹车装置
公开(公告)号：JP2014020547A
公开(公告)日：2014-02-03
申请号：JP2012163509
申请日：2012-07-24
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MIYAMOTO HIROSHIGE , SHINAGAWA TOMOHIRO
IPC分类号： F16D69/00 , B66B1/26 , B66B11/08 , F16D65/092 , F16D65/12 , F16D65/847 , F16D69/02
摘要： PROBLEM TO BE SOLVED: To obtain a brake device capable of removing wear powder of a friction member, which adheres to a baking surface of a braking member when the friction member is pressed against the braking surface to apply the brakes, from the braking surface.SOLUTION: A brake device includes: a brake disk configured to be rotatable and having a braking surface; a lining configured to be pressed against and separated from the braking surface and pressed against the rotating braking surface to brake the brake disk; and a block configured to be brought into contact with the braking surface. The block brought into contact with the rotating braking surface is made of a material that hardly wears compared with the lining pressed against the rotating braking surface.
摘要翻译：要解决的问题：获得一种制动装置，该制动装置能够从制动表面去除摩擦构件的磨损粉末，摩擦构件粘附到制动构件的烘烤表面，当摩擦构件被压在制动表面上以施加制动时。解决方案：制动装置包括：构造成可旋转并具有制动表面的制动盘; 被配置为被压靠在制动表面上并与制动表面分离并压靠在旋转制动表面上以制动制动盘的衬片; 以及构造成与制动表面接触的块。与旋转的制动表面接触的块由与压靠在旋转的制动表面上的衬里相比几乎不磨损的材料制成。

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